LITE-ON DCC
RELEASE
LITE-ON Technology Corp. / Optoelectronics
No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.
Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-0660
http://www.liteon.com/opto
IR Emitter and Detector
Product Data Sheet
LTR-526AB
Spec No.: DS50-2000-005
Effective Date: 07/24/2012
Revision: B
BNS-OD-FC001/A4
BNS-OD-FC001/A4
BNS-OD-FC001/A4
BNS-OD-FC001/A4
LITE-ON TECHNOLOGY CORPORATION.
Propert y of Li t e -On Onl y
FEATURES
* HIGH PHOTO SENSITIVITY
* SUITABLE FOR INFRARED RADIATION
* LOW JUNCTION CAPACITANCE
* HIGH CUT-OFF FREQUENCY
* FAST SWITCHING TIME
* THE LTR-526AB IS A SPECIAL DARK BLUE PLASTIC PACKAGE THAT CUT THE VISIBLE LIGHT
AND SUITABLE FOR THE DETECTORS OF INFRARED APPLICATIONS
PACKAGE DIMENSIONS
NOTES:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25mm(.010") unless otherwise noted.
3. Protruded resin under flange is 1.5mm(.059") max.
4. Lead spacing is measured where the leads emerge from the package.
5. Specifications are subject to change without notice.
Part No. : LTR-526AB DATA SHEET
Page : 1 of 4
BNS-OD-C131/A4 REV. B JUL, 2012
REV.B JUL 2012
LITE-ON TECHNOLOGY CORPORATION.
Pro pert y of Li t e -On Onl y
ABSOLUTE MAXIMUM RATINGS AT TA=25℃
PARAMETER
MAXIMUM RATING
UNIT
Power Dissipation
150
mW
Reverse Voltage
30
V
Operating Temperature Range
-40℃ to + 85℃
Storage Temperature Range
-55℃ to + 100℃
Lead Soldering Temperature
[1.6mm(.063") From Body]
260℃ for 5 Seconds
ELECTRICAL OPTICAL CHARACTERISTICS AT TA=25℃
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Reverse Break Down Voltage
V(BR)R
30
V
IR = 100μA
Ee = 0mW/c㎡
Reverse Dark Current Voltage
ID(R)
30
nA
VR = 10V
Ee = 0mW/c㎡
Open Circuit Voltage
VOC
350
mV
λ = 940nm
Ee = 0.5mW/c㎡
Rise Time
Tr
50
nsec
VR = 10V
λ = 940nm
RL = 1KΩ
Fall Time
Tf
50
nsec
Short Circuit Current
IS
1.7
2
μA
VR = 5V
λ = 940nm
Ee = 0.1mW/c㎡
Total Capacitance
CT
25
P
VR = 3V
f = 1MHZ
Ee = 0mW/c㎡
Wavelength of the Max Sensitivity
λSMAX
900
nm
Part No. : LTR-526AB DATA SHEET
Page : 2 of 4
BNS-OD-C131/A4 REV.B JUL, 2012
LITE-ON TECHNOLOGY CORPORATION.
Pro pert y of Li t e -On Onl y
TYPICAL ELECTRICAL / OPTICAL CHARACTERISTICS CURVES
(25℃ Ambient Temperature Unless Otherwise Noted)
10
-1
0
1
2
3
10
10
10
10
10-2 -1 0 1 2
10 10 10 10
Fig.1 DARK CURRENT VS.
REVERSE VOLTAGE
TA=25° C, Ee=0 mW /cm
Fig.2 CAPACITANCE VS.
REVERSE VOLTAGE
F=1MHZ; Ee=0mW/cm
Fig.3 PHOTOCURRENT VS.
AMBIENT TEMPERATURE Fig.4 DARK CURRENT
AMBIENT TEMPERATURE
VR=10, Ee=0mW/cm
Reverse Voltage VR
Ambient Temperature
Reverse Voltage VR
Ambient Temperature
Dark Current ID
Capacitance Ct
Photocurrent
Dark Current ID
pA
nA
Is amb
22
2
Is 25
4000
3000
2000
1000
00510 2015 V V
100
80
60
40
20
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0-20 0 20 40 60 80 C020 40 60 80 100
pF
o
oC
o
Part No. : LTR-526AB DATA SHEET
Page : 3 of 4
BNS-OD-C131/A4 REV.B JUL,2012
LITE-ON TECHNOLOGY CORPORATION.
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TYPICAL ELECTRICAL / OPTICAL CHARACTERISTICS CURVES
(25℃ Ambient Temperature Unless Otherwise Noted)
%
100
80
60
40
20
0
700 800 900 1000 1100
10
-2 mW
CM
10 2
3uA
010 20
30
40
50
60
80
100
1.0
0.9
0.8
0.6
0
175
125
75
25
0
-40
Wavelength
Fig.5 RELATIVE SPECTRAL SENSITIVITY
VS WAVELENGTH
Irradiance Ee
Fig.6 PHOTOCURRENT VS
IRRADIANCE = 940 nm
Photocurrent Ip
Relative Spectral Sensitivity
Fig.7 SENSITIVITY DIAGRAM
Ambient Temperature
Fig.8 TOTAL POWER DISSIPATION VS
AMBIENT TEMPERATURE
Total Power Dissipation mW
Relative Sensitivity
-1
10 0
10 1
10
2
10
1
10
0
10
-1
10
0.7
0.30.5 0.2 0.4 100 C
o o o
o
o
o
o
o
o
o
-20 0 20 40 60 80
Part No. : LTR-526AB DATA SHEET
Page : 4 of 4
BNS-OD-C131/A4 REV.B JUL, 2012
