Rev.3.00 Apr 27, 2006 page 1 of 6
2SK2408
Silicon N Channel MOS FET REJ03G1011-0300
(Previous: ADE-208-13 58)
Rev.3.00
Apr 27, 2006
Application
High speed power switching
Features
• Low on-resistance
• Built-in fast recovery diode (trr = 120 ns typ)
• High speed switching
• Low drive current
• Suitable for switching regulator, motor control
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
1. Gate
2. Drain
(Flange
)
3. Source
123
D
G
S
2SK2408
Rev.3.00 Apr 27, 2006 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 500 V
Gate to source voltage VGSS ±30 V
Drain current ID 7 A
Drain peak current ID(pulse)*1 28 A
Body to drain diode reverse drain current IDR 7 A
Channel dissipation Pch*2 60 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 500 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0
Zero gate voltage drain current IDSS — — 250 µA VDS = 400 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance RDS(on) — 0.7 0.9 Ω I
D = 4 A, VGS = 10 V*3
Forward transfer admittance |yfs| 3.5 6.0 — S ID = 4 A, VDS = 10 V*3
Input capacitance Ciss — 1100 — pF
Output capacitance Coss — 310 — pF
Reverse transfer capacitance Crss — 50 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 15 — ns
Rise time tr — 55 — ns
Turn-off delay time td(off) — 100 — ns
Fall time tf — 48 — ns
ID = 4 A, VGS = 10 V,
RL = 7.5 Ω
Body to drain diode forward v oltage VDF — 0.9 — V IF = 7 A, VGS = 0
Body to drain diode reverse
recovery time trr — 120 — ns
IF = 7 A, VGS = 0,
diF / dt = 100 A / µs
Note: 3. Pulse Test
2SK2408
Rev.3.00 Apr 27, 2006 page 3 of 6
Main Characteristics
Case Temperature T
C
(°C)
Channel Dissipation Pch (W)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
20
20 50
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
16
4
10 30 400
8
12
Drain Current I
D
(A)
V
GS
= 4 V
Pulse Test
7 V
10 V 6 V
5 V
20
410
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
16
4
2680
8
12
V
DS
= 20 V
Pulse Test –25°C
75°C
Ta = 25°C
10
820
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
8
2
412160
4
6
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
I
D
= 2 A
10 A
5 A
5
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
2
0.2
0.1
0.5
1
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
0.05
10
V
GS
= 10 V
0.5 2 5 20 50
1
15 V
80
60
40
20
050 100 150 200 1 3 10 30 100 300 1000
50
20
10
2
5
1
0.2
0.1
0.05
0.5
100 µs
10 µs
1 ms
PW = 10 ms (1shot)
DC Operation (Tc = 25°C)
Operation in
this area is
limited by R
DS(on)
Ta = 25°C
2SK2408
Rev.3.00 Apr 27, 2006 page 4 of 6
2.0
40 160
Case Temperature TC (°C)
Static Drain to Source on State Resistance
RDS (on) (Ω)
1.6
0.4
0 80 120
0
0.8
1.2
Static Drain to Source on State
Resistance vs. Temperature
–40
V
GS
= 10 V
Pulse Test
I
D
= 10 A
2, 5 A
50
0.2 10
Drain Current ID (A)
10
1
0.5 5
5
2
0.1 1
Forward Transfer Admittance yfs (S)
Forward Transfer Admittance
vs. Drain Current
20
V
DS
= 20 V
25°C
T
C
= –25°C
75°C
0.5
Pulse Test
2
5,000
0.5 10
Reverse Drain Current IDR (A)
2,000
100
150.2
500
1,000
50
2
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
200
20
1,000
20 50
Drain to Source Voltage VDS (V)
Capacitance C (pF)
10 30 40
Typical Capacitance vs.
Drain to Source Voltage
0
100
V
GS
= 0
f = 1 MHz
Crss
Coss
Ciss
5,000
5
10
500
16 40
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
400
100
82432
200
300
20
16
4
0
8
12
Gate to Source Voltage VGS (V)
0
V
GS
V
DS
V
DD
= 400 V
250 V
100 V
I
D
= 7 A
Gate Charge Qg (nc)
250 V
400 V
V
DD
= 100 V
500
Drain Current ID (A)
Switching Time t (ns)
200
5
50
100
10
Switching Characteristics
td(off)
0.50.2 1
tf
trtd(on)
20
V
GS
= 10 V V
DD
= 30 V
PW = 2 µs, duty < 1%
21052
0
•
•
2SK2408
Rev.3.00 Apr 27, 2006 page 5 of 6
Pulse Test
V
GS
= 0, –10 V
20
0.8 2.0
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
16
0.4 1.2 1.6
8
12
Reverse Drain Current vs.
Source to Drain Voltage
0
4
10 V
15 V
Normalized Transient Thermal Impedance γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
Vin
10 V 50 Ω
D.U.T.
Vout Monitor
R
L
V
DD
30 V
=
..
Waveforms
Vin
td(on)
10%
tr
90%
Vout 10%
90% 90%
tf
td(off)
10%
3
1
0.3
0.1
0.03
0.01
10 µ100 µ1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 2.08°C/W, Tc = 25°C
θ γ θ
θ
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
2SK2408
Rev.3.00 Apr 27, 2006 page 6 of 6
Package Dimensions
0.5 ± 0.1
2.54 ± 0.5
0.76 ± 0.1
14.0 ± 0.5 15.0 ± 0.3
2.79 ± 0.218.5 ± 0.57.8 ± 0.5
10.16 ± 0.2
2.54 ± 0.5
1.26 ± 0.15
4.44 ± 0.2
2.7 Max
1.5 Max
11.5 Max
9.5
8.0
1.27
6.4
+0.2
–0.1
φ 3.6
+0.1
–0.08
Package Name
PRSS0004AC-A TO-220AB / TO-220ABV
MASS[Typ.]
1.8gSC-46
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
2SK2408-E 500 pcs Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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