SS8050-C
NPN Silicon
Transistors
Features
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CBO Collector-Base Breakdown Voltage
(I
C=100uAdc, IE=0)
40 --- Vdc
V(BR)CEO Collector-Emitter Breakdown Voltage
(I
C=0.1mAdc, IB=0)
25 --- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(I
E=100uAdc, IC=0)
5.0 --- Vdc
ICBO Collector Cutoff Current
(VCB=40Vdc, I
E=0)
--- 0.1 uAdc
ICEO Collector Cutoff Current
(VCE=20Vdc, I
B=0)
--- 0.1 uAdc
IEBO Emitter Cutoff Current
(VEB=5.0Vdc, I
C=0)
--- 0.1 uAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain
(I
C=100mAdc, VCE=1.0Vdc)
120 300 ---
hFE(2) DC Current Gain
(I
C=800mAdc, VCE=1.0Vdc)
40 --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(I
C=800mAdc, I
B=80mAdc)
--- 0.5 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(I
C=800mAdc, I
B=80mAdc)
--- 1.2 Vdc
VEB Base- Emitter Voltage
(I
E=1.5Adc)
--- 1.6 Vdc
SMALL-SIGNAL CHARACTERISTICS
fTTransistor Frequency
(I
C=50mAdc, VCE=10Vdc, f=30MHz)
190 --- MHz
• Marking : SS8050
• TO-92 Plastic-Encapsulate Transistors
• Capable of 1.0Watts(Tamb=25O
C) of Power Dissipation.
• Collector-current 1.5A
• Collector-base Voltage 40V
• Operating and storage junction temperature range: -55OC to +150OC
CLASSIFICATION OF HFE (1)
Rank C D
Range 120-200 160-300
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: C 2012/10/15
TM
Micro Commercial Components
www.mccsemi.com
1 of 2
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Case Material: Molded Plastic. UL Flammability
ClassificationRating94V-0 and MSL Rating 1
SS8050-D
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .175 .185 4.45 4.70
B .175 .185 4.45 4.70
C .500 --- 12.70 ---
D .016 .020 0.41 0.63
E .135 .145 3.43 3.68
.095.1052.422.67 Straight Lead
AE
B
C
D
G
EBC
EBC
BENT LEADSTRAIGHT LEAD
BULK PACK AMMO PACK
* For ammo packing detailed specification, click here to visit our website
of product packaging for details.
.173.2204.405.60 Bent Lead
G
TO-92
DIMENSIONS