Jul.2004
C1
E2
C2E1
E2 G2
LABEL
3-M5 NUTS
2-φ6.5 MOUNTING HOLES
TAB #110. t=0.5
17
48
13
94 232317
29
+1.0
–0.5
21.2 7.5
16 7 16 7 16
80±
0.25
4184
12 12 12
E1G1
4
20
(14)
C2E1
E2
E2 G2G1 E1
C1
CIRCUIT DIAGRAM
Tc measured point (Base plate)
CM200DY-12NF
APPLICATION
General purpose inverters & Servo controls, etc
MITSUBISHI IGBT MODULES
CM200DY-12NF
HIGH POWER SWITCHING USE
¡IC ...................................................................200A
¡VCES ............................................................600V
¡Insulated Type
¡2-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
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Jul.2004
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 125°C
VCC = 300V, IC = 200A, VGE = 15V
VCC = 300V, IC = 200A
VGE1 = VGE2 = 15V
RG = 3.1Ω, Inductive load switching operation
IE = 200A
IE = 200A, VGE = 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound Applied*2 (1/2 module)
Tc measured point is just under the chips
IC = 20mA, VCE = 10V
IC = 200A, VGE = 15V
VCE = 10V
VGE = 0V
600
±20
200
400
200
400
650
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
MITSUBISHI IGBT MODULES
CM200DY-12NF
HIGH POWER SWITCHING USE
V
V
A
A
A
A
W
°C
°C
V
N • m
N • m
g
1
0.5
2.2
—
30
3.7
1.2
—
120
120
300
300
150
—
2.6
0.19
0.35
—
0.13*3
31
mA
µA
nF
nF
nF
nC
ns
ns
ns
ns
µC
V
°C/W
°C/W
°C/W
°C/W
Ω
—
—
1.7
1.7
—
—
—
800
—
—
—
—
—
3.5
—
—
—
0.07
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.1
6 V
V
5 7.5
ns
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance
External gate resistance
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance*1
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Note 1
)
Qrr (
Note 1
)
VEC(
Note 1
)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
RG
Symbol Parameter
VGE(th)
VCE(sat)
*1 : Tc measured point is shown in page OUTLINE DRAWING.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : Tc’ measured point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
DC, TC’ = 93°C*3
Pulse (Note 2)
Pulse (Note 2)
TC = 25°C
Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M6
Typical value
Symbol Parameter
Collector current
Emitter current
Torque strength
Conditions UnitRatings
VCES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
Tj
Tstg
Viso—
—
—
Unit
Typ.
Limits
Min. Max.
MAXIMUM RATINGS
(Tj = 25°C)
ELECTRICAL CHARACTERISTICS
(Tj = 25°C)
Test conditions
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Jul.2004
MITSUBISHI IGBT MODULES
CM200DY-12NF
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
400
300
100
200
00 4 6 8 10
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I C (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
Tj = 25°C
12
11
10
9
VGE =
20V
2
15
13
8
4
3
2
1
00 200 400300
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V CE (sat) (V)
COLLECTOR CURRENT IC (A)
VGE = 15V
Tj = 25°C
Tj = 125°C
100
10
8
6
4
2
0 2012 146 8 10 16 18
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V CE (sat) (V)
Tj = 25°C
IC = 400A
IC = 200A
IC = 80A 101
2
3
5
7
102
2
3
5
7
103
0 1 2 43 5
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT I E (A)
EMITTER-COLLECTOR VOLTAGE VEC (V)
Tj = 25°C
Tj = 125°C
10–1
100
10–1
2
3
5
7
101
2
3
5
7
102
2
3
5
7
2 100
3 5 7 2 101
3 5 7 2 102
3 5 7
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
CAPACITANCE C ies, C oes, C res (nF)
COLLECTOR-EMITTER VOLTAGE VCE (V)
Cies
Coes
Cres
VGE = 0V 100
101
2
3
5
7
102
2
3
5
7
103
2
3
5
7
101 102
5 7 103
2 3 5 72 3
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIME (ns)
COLLECTOR CURRENT IC (A)
Conditions:
VCC = 300V
VGE = ±15V
RG = 3.1Ω
Tj = 125°C
Inductive load
td(off)
td(on)
tf
tr
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Jul.2004
MITSUBISHI IGBT MODULES
CM200DY-12NF
HIGH POWER SWITCHING USE
101 102
2 3 5 7 103
2 3 5 7
101
102
2
3
5
7
103
2
3
5
7
trr
Irr
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT IE (A)
REVERSE RECOVERY TIME t rr (ns)
REVERSE RECOVERY CURRENT l rr (A)
Conditions:
VCC = 300V
VGE = ±15V
RG = 3.1Ω
Tj = 25°C
Inductive load 10–3
10–5 10–4
100
7
5
3
2
10–2
75
3
2
10–1
75
3
2
10–3
23 57 23 57 23 57 23 57
101
10–2 10–1 100
10–3
10–3
7
5
3
2
10–2
75
3
2
10–1
23 57 23 57
Single Pulse
TC = 25°C
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z th ( j – c)
TMIE (s)
IGBT part:
Per unit base =
R
th(j–c)
= 0.19°C/W
FWDi part:
Per unit base =
R
th(j–c)
= 0.35°C/W
0
4
8
16
12
20
0 400200 800 12001000600
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V GE (V)
GATE CHARGE QG (nC)
VCC = 300V
VCC = 200V
IC = 200A
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