VUB160-16NOX
3~ Rectifier Bridge + Brake Unit
Standard Rectifier Module
S1
U1/
W1
M1/O1
~A6
~E6
~K6
M10/O10
W
10
U
10
S/T
10
Part number
VUB160-16NOX
Backside: isolated
Features / Advantages: Applications: Package:
● Package with DCB ceramic base plate
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● 3~ Rectifier with brake unit
for drive inverters
V2-Pack
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
RRM
1600
I180
FSM
1100
DAV
V=V
A
A
=
=
I
3~
Rectifier
CES
1200
Brake
Chopper
I220
CE(sat)
1.95
C25
V=V
A
V
=
=
V
IXYS reserves the right to change limits, conditions and dimensions. 20130604bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUB160-16NOX
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.16
R0.6 K/W
R
min.
180
V
RSM
V
100T = 25°C
VJ
T = °C
VJ
mA2V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
90
P
tot
205 WT = 25°C
C
RK/W0.2
60
1600
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions Unit
1.55
T = 25°C
VJ
125
V
F0
V0.81T = °C
VJ
150
r
F
4.4 mΩ
V1.09T = °C
VJ
I = A
F
V
60
1.59
I = A
F
180
I = A
F
180
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V1600
max. re pe titive re verse bl ocking voltage T = 25°C
VJ
C
J
37
j
unction capacitance V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
1.10
1.19
4.37
4.25
kA
kA
A
kA
935
1.01
6.05
5.89
1600
DAV
d =rectangular ⅓
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1700
IXYS reserves the right to change limits, conditions and dimensions. 20130604bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUB160-16NOX
T = 125°C
V
CES
V1200
collector emitter voltage
collector emitter saturation voltage
T = 25°C
collector current A
220
A
C
VJ
Symbol Definition
Ratings
typ. max.min.Conditions Unit
150
V
V
CE(sat)
total power dissipation 695 W
collector emitter leakage current
6.5 V
turn-on delay time 70 ns
t
reverse bias safe operating area
A
V
GES
V±20
V
GEM
max. transient gate emitter voltage
T = °C
C
V
P
tot
gate emitter threshold voltage
RBSOA
450
±30
T = 125°C
T = 125°C
VJ
V
max. DC gate voltage
I
C25
I
C
T = 25°C
VJ
I = A; V = 15 V
CGE
T = 25°C
VJ
V
GE(th)
I
CES
I = mA; V = V
CGECE
V = V ; V = 0 V
CE CES GE
I
GES
T = 25°C
VJ
gate emitter leakage current V = ±20 V
GE
2.25
2.3
5.95.4
mA
0.1 mA
0.1
500
G(on)
total gate charge V = V; V = 15 V; I = A
CE
Q
GE C
470 nC
t
t
t
E
E
d(on)
r
d(off)
f
on
off
40 ns
250 ns
100 ns
14 mJ
16 mJ
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V = V; I = A
V = ±15 V; R = Ω
CE C
GE G
V = ±15 V; R = Ω
GE G
V = V
CEK
1200
short circuit safe operating area
µs
SCSOA
10T = 125°C
VJ
V = V; V = ±15 V
CE GE
short circuit duration
t
short circuit current
I
SC
SC
R = Ω; non-repetitive
G
600 A
R
thJC
thermal resistance junction to case
0.10
K/W
V
RRM
V1200
max. repe titive re verse volt a g e T = 25°C
VJ
T = 25°C
forward current A
48
A
C
32
T = °C
C
I
F25
I
F
T = 25°C
forward voltage V
2.75
V
VJ
1.80T = 125°C
VJ
V
F
I = A
F
T = 25°C
reverse current mA
0.25
mA
VJ
1T = 125°C
VJ
I
RR RRM
T = 125°C
VJ
Q
I
t
rr
RM
rr
1.8 µC
23 A
150 ns
reverse recovery charge
max. reverse recovery current
reverse recovery time
V =
-di /dt = A/µs
I = A
F
F
R
R
thJC
thermal resistance junction to case 0.9 K/W
V = V
T = 25°C
C
T = 25°C
VJ
T = 125°C
VJ
VJ
100
6
100
100
30
30
6.8
6.8
6.8
600
900
400
600
I
CM
1.95
R
thCH
thermal resistance case to heatsink
0.18
K/W
0.3R
thCH
thermal resistance case to heatsink K/W
Brake IGBT
Brake Diode
600 V
80
80
80
80
nA
IXYS reserves the right to change limits, conditions and dimensions. 20130604bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUB160-16NOX
Ratings
XXXXXXXXXXXXX yywwx
Logo UL Part name Date code Prod. lin
e
Package
T
VJ
°C
M
D
Nm2.5
mounting torque 2
T
stg
°C125
storage temperature -40
Weight g76
Symbol Definition typ. max.min.Conditions
virt ua l j un ction temperature
Unit
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
6.0
12.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 100 A
per terminal
150-40
terminal to terminal
V
2-Pack
Similar Part Package Voltage class
VUB160-16NOXT V2-Pack 1600
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
VUB160-16NOX 510141Box 6VUB160-16NOXStandard
3000
3600
ISOL
threshold voltage V0.81
mΩ
V
0 max
R
0 max
slope resistance * 3.2
1.1
13.8
1.31
8
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier Brake
IGBT
Brake
Diode
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130604bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUB160-16NOX
Marking
S1
U1/
W1
M1/O1
~A6
~E6
~K6
M10/O10
W
10
U
10
S/T
10
Outlines V2-Pack
IXYS reserves the right to change limits, conditions and dimensions. 20130604bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUB160-16NOX
0.001 0.01 0.1 1
400
500
600
700
800
900
23456789
1
10
3
10
4
020406080
0
20
40
60
80
100
0 25 50 75 100 125 150 175
1 10 100 1000 10000
0.0
0.2
0.4
0.6
[A
2
s]
I
FSM
[A]
t[s]
P
tot
[W]
I
F(AV)M
[A] T
amb
[°C]
t[ms]
0 25 50 75 100 125 150
0
40
80
120
160
I
FAVM
[A]
Z
thJC
[K/W]
50Hz, 80% V
RRM
T
VJ
=150°C
0.5 1.0 1.5
0
40
80
120
160
200
I
F
[A]
V
F
[V]
T
VJ
=45°C
T
VJ
= 150°C
T
VJ
= 45°C
T
VJ
=125°C
T
VJ
= 25°C
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
t[ms]
Fig. 3 I
2
tvs.timeperdiode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
T
C
[°C]
Fig. 5 Max. forward current vs.
case temperature per diode
Fig. 6 Transient thermal impedance junction to case vs. time per diode
R
i
t
i
0.060 0.020
0.003 0.010
0.150 0.225
0.243 0.800
0.144 0.580
R
thA
:
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
DC =
1
0.5
0.4
0.33
0.17
0.08
0.8 x V
RRM
50 Hz
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
= 150°C
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130604bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUB160-16NOX
50 150 2500 100 200 300
0
5
10
15
20
25
30
35
0.001 0.01 0.1 1 10
0.01
0.1
1
0 100 200 300 400 500 600
0
5
10
15
20
0 2 4 6 8 10121416
10
12
14
16
18
20
22
5 7 9 11 13681012
0
50
100
150
200
250
300
01234
0
50
100
150
200
250
300
0123
0
50
100
150
200
250
300
[nC]
[s]
[mJ]
[A]
[A]
[A]
[V] [V]
[mJ]
[K/W]
E
off
E
on
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. transfer characteristics
Fig. 4 Dynamic parameters Q
r
,I
RM
versus T
VJ
Fig. 5 Typ. recovery time t
rr
vs. -di
F
/dt Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal impedance junction to case
[V]
[A] [Ohm]
T
VJ
=125°C
25°C
0 25 50 75 100 125 150
100
1000
10000
[Ohm]
[°C]
Fig. 8 Typ. thermistor resistance
versus temperature
9V
11 V
T
VJ
= 125°C
13 V
V
GE
=15V
17 V
19 V
T
VJ
=25°C
T
VJ
= 125°C
I
C
=150A
V
CE
=600V
E
on
E
off
I
C
= 150 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
Riti
[K/W] [s]
10.0270.002
20.0280.03
3 0.06 0.03
40.0650.08
R
G
= 4.7 Ohm
V
CE
= 600 V
V
GE
=±15 V
T
VJ
=125°C
[V]
Brake IGBT
IXYS reserves the right to change limits, conditions and dimensions. 20130604bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUB160-16NOX
200 600 10000 400 800
120
140
160
180
200
220
11.010.0100.0
0.01
0.1
1
04080120160
0.0
0.5
1.0
1.5
2.0
0 200 400 600 800 1000
0
20
40
60
80
100
120
0.0
0.2
0.4
0.6
0.8
1.0
1.2
200 600 10000400800
0
10
20
30
40
50
60
0001001
0
1
2
3
4
5
0123
0
10
20
30
40
50
60
70
80
K
f
T
VJ
[°C]
t[s]
V
FR
[V]
I
RM
[A]
Q
r
[μC]
I
F
[A]
V
F
[V] -di
F
/dt [A/μs]
t
rr
[ns]
Z
thJC
[K/W]
VFR
trr
Fig. 1 Forward current I
F
vs. V
F
Fig. 2 Typ. reverse recovery charge Q
r
versus -di
F
/dt
Fig. 3 Typ. peak reverse current I
RM
versus -di
F
/dt
Fig. 4 Dynamic parameters Q
r
,I
RM
versus T
VJ
Fig. 5 Typ. recovery time t
rr
vs. -di
F
/dt Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal impedance junction to case
t
rr
[μs]
I
F
=60A
30 A
15 A
I
F
=60A
30 A
15 A
I
RM
Q
R
I
F
=60A
30 A
15 A
-di
F
/dt [A/μs]
-di
F
/dt [A/μid-]s
F
/dt [A/μs]
T
VJ
=125°C
I
F
=30A
T
VJ
=125°C
25°C
iR
i
t
i
[K/W] [s]
1 0.465 0.0052
2 0.179 0.0003
3 0.256 0.0397
T
VJ
=125°C
V
R
=600V
T
VJ
=125°C
V
R
=600V
T
VJ
=125°C
V
R
=600V
Brake Diode
IXYS reserves the right to change limits, conditions and dimensions. 20130604bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
