SEMITOP®2
IGBT Module
SK60GAL125
SK60GAR125
Target Data
Features
 
  
   
   
   
   
! " #$% &'% 
()  * 
Typical Applications*
+    
&*
+   
!$+
GAL GAR
Absolute Maximum Ratings %, -. /)   
Symbol Conditions Values Units
IGBT
(0+ %1, -. / 3-44 (
&%1, 3-. / %, -. / .3 5
%, 64 / 7. 5
&89 &89,-& 344 5
('0+ : -4 (
 ( , 744 (; ('0 < -4 (;
(0+ = >44 (
%1, 3-. / 34 ?
Inverse Diode
&"%1, 3.4 / %, -. / @7 5
%, 64 / -A 5
&"89 &"89,-&" 5
&"+9 , 34 ;   * %1, -. / 334 5
Freewheeling Diode
&"%1, 3.4 / %, -. / .B 5
%, 64 / 76 5
&"89 5
&"+9 , 34 ;   * %1, 3.4 / ..4 5
Module
&89+ 5
%*1 C@4 DDD E3.4 /
% C@4 DDD E3-. /
( 5) 3 D -.44 (
Characteristics %, -. /)   
Symbol Conditions min. typ. max. Units
IGBT
('0 ('0 , (0) &, - 5 @). .). >). (
&0+ ('0 ,4()(0 , (0+ %1, -. / 4)44> 5
&'0+ (0 ,4()('0 , -4 ( %1, -. / 744 5
(04 %1, -. / 3)@ 3)A (
%1, 3-. / 3)B -)- (
0 ('0 , 3. ( %1, -./ 7> F
%1, 3-./ @7 F
(0 & , .4 5) ('0 , 3. ( %1, -./*D 7)- 7)B (
%1, 3-./*D 7)6. (
 7)7 "
 (0 , -.) ('0 , 4 ( , 3 9G 4). "
 4)-- "
 
8' , 77 F ( , >44( 
0 &, @.5 6)7> H
 8' , 77 F %1, 3-. / 
('0,:3.( 
0 7)7- H
81C  &'% 4)> IJK
SK60GAL125
1 01-06-2007 DIL © by SEMIKRON
http://store.iiic.cc/
SEMITOP®2
IGBT Module
SK60GAL125
SK60GAR125
Target Data
Features
 
  
   
   
   
   
! " #$% &'% 
()  * 
Typical Applications*
+    
&*
+   
!$+
GAL GAR
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
(", (0 &" , 34 5; ('0 , 4 ( %1, -. /*D - -). (
%1, 3.4 /*D 3)BA -)7 (
("4 %1, -. / (
%1, 3-. / 3)36 (
"%1, -. / F
%1, 3-. / 73). F
&889 &", 74 5 %1, 3-. / 5
L J , C344 5J? ?
0 (, @44( H
81C   3)3> IJK
Freewheeling Diode
(", (0 &" , .4 5; ('0 , 4 ( %1, -. /*D - -). (
%1, 3-. /*D 3)6 (
("4 %1, 3-. / 3 3)- (
"%1, 3-. / 3> -- (
&889 &", .4 5 %1, 3-. / 5
L J , C644 5J? ?
0 (8,>44( H
81C"   4)A IJK
9  M - #
3A
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
SK60GAL125
2 01-06-2007 DIL © by SEMIKRON
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Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
SK60GAL125
3 01-06-2007 DIL © by SEMIKRON
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Fig. 7 Typ. switching times vs. ICFig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
SK60GAL125
4 01-06-2007 DIL © by SEMIKRON
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UL recognized file no. E 63 532
 %36 +  )   $)       N -
 % 36 '5O  % 36 '58
SK60GAL125
5 01-06-2007 DIL © by SEMIKRON
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