Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS -60V
▼ Small Package Outline RDS(ON) 250mΩ
▼ Surface Mount Device ID- 1.8A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient390 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
1.38
-55 to 150
-55 to 150
Linear Derating Factor
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3- 1.4
Pulsed Drain Current1-10
AP2311GN-HF
Rating
- 60
200811263
Halogen-Free Product
1
+20
- 1.8
0.01
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
The SOT-23 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
D
G
S
SOT-23
AP2311GN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -60 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.04 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-1.8A - 200 250 mΩ
VGS=-4.5V, ID=-1.4A - 240 300 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-1A - 2 - S
IDSS Drain-Source Leakage Current VDS=-60V, VGS=0V - - -10 uA
Drain-Source Leakage Current (Tj=70oC) VDS=-48V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=+20V - - +100 nA
QgTotal Gate Charge2ID=-1A - 6 10 nC
Qgs Gate-Source Charge VDS=-48V - 1 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 3 - nC
td(on) Turn-on Delay Time2VDS=-30V - 8 - ns
trRise Time ID=-1A - 5 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 22 - ns
tfFall Time RD=30Ω-3-
ns
Ciss Input Capacitance VGS=0V - 510 810 pF
Coss Output Capacitance VDS=-25V - 50 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF
RgGate Resistance f=1.0MHz - 6.4 9.6 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-1.2A, VGS=0V - - -1.2 V
trr Reverse Recovery Time2IS=-1A, VGS=0V, - 30 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 38 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 270 ℃/W when mounted on Min. copper pad.
AP2311GN-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
3
0
2.5
5
7.5
10
0123456
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TA=25 oC
VG= -3.0V
-10V
-7.0V
-5.0V
-4.5V
0
3
5
8
10
01234567
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TA= 150 oC
-10V
-7.0V
-5.0V
-4.5V
VG= -3 .0V
200
210
220
230
240
250
246810
-VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=-1.4A
TA=25 oC
0.4
0.8
1.2
1.6
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=-1.8A
VG=-10V
0.0
0.5
1.0
1.5
2.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25 oC
Tj=150 oC
0.5
0.8
1.0
1.3
1.5
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized -VGS(th) (V)
AP2311GN-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fi
g
10. Effective Transient Thermal Im
p
edance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Circuit
4
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re spon se (Rthja)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270℃/W
tT
Q
VG
-4.5V
QGS QGD
QG
Charge
0
2
4
6
8
10
12
024681012
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
ID=-1A
VDS = -48 V
10
100
1000
1 5 9 1317212529
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0
2
4
6
8
10
0123456
-VGS , Gate-to-Source Voltage (V)
-ID , Drain Current (A)
Tj=150oCTj=25oC
VDS =-5V
0.001
0.01
0.1
1
10
100
0.1 1 10 100 1000
-VDS , Drain-to-Source Voltage (V)
-ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
Package Outline : SOT-23
Millimeters
MIN NOM MAX
A 1.00 1.15 1.30
A1 0.00 -- 0.10
A2 0.10 0.15 0.25
D1 0.30 0.40 0.50
e1.70 2.00 2.30
D 2.70 2.90 3.10
E 2.40 2.65 3.00
E1 1.40 1.50 1.60
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SOT-23
ADVANCED POWER ELECTRONICS CORP.
SYMBOLS
NGSS
Part Number : NG
If second letter has underline : HF & Rohs product
If second letter has not underline : Rohs product
D
E1 E
e
D1
A
A1 A2
Date Code :
SS:2004,2008,2012…
SS:2003,2007,2011…
SS:2002,2006,2010…
SS:2001,2005,2009…
"A~Z" showed on 3rd position --> week 1 ~ week 26,
"A~Z" showed on 4th position --> week 27 ~ week 52.
Laser Marking
5
