PD - 94020A IRF5NJ540 100V, N-CHANNEL HEXFET(R) POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number IRF5NJ540 RDS(on) 0.052 BVDSS 100V ID 22A* Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-0.5 Features: n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight Units 22* 16 88 75 0.60 20 200 16 7.5 4.1 -55 to 150 A W W/C V mJ A mJ V/ns o C 300 (for 5 s) 1.0 g * Current is limited by package For footnotes refer to the last page www.irf.com 1 7/13/01 IRF5NJ540 Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage 100 -- -- V VGS = 0V, ID = 250A -- 0.11 -- V/C Reference to 25C, ID = 1.0mA -- -- 0.052 2.0 11 -- -- -- -- -- -- 4.0 -- 25 250 V S( ) BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units Test Conditions VGS = 10V, ID = 16A VDS = VGS, ID = 250A VDS = 50V, IDS = 16A VDS = 100V ,VGS=0V VDS = 80V, VGS = 0V, TJ =125C VGS = 20V VGS = -20V VGS =10V, ID = 16A VDS = 80V BVDSS A IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 100 -100 104 20 43 24 125 86 82 -- Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 1487 353 182 -- -- -- nA nC VDD = 50V, ID = 16A, VGS =10V, RG = 7.5 ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) -- -- -- -- 22* 88 A VSD t rr Q RR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- -- -- -- -- -- 1.3 240 1.67 V nS C ton Forward Turn-On Time Test Conditions Tj = 25C, IS = 16A, VGS = 0V Tj = 25C, IF = 16A, di/dt 100A/s VDD 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units -- -- 1.67 Test Conditions C/W Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF5NJ540 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 4.5V 1 20s PULSE WIDTH T = 25 C 1 10 4.5V 1 10 100 2.5 TJ = 150 C 10 15 V DS = 25V 20s PULSE WIDTH 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 C 7.0 10 100 Fig 2. Typical Output Characteristics 100 6.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 5.0 J 0.1 0.1 VDS , Drain-to-Source Voltage (V) 1 4.0 20s PULSE WIDTH T = 150 C J 0.1 0.1 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP ID = 22A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF5NJ540 VGS Ciss Crss Coss 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 2000 Ciss 1500 1000 C oss Crss 500 20 ID = 16A VDS = 80V VDS = 50V VDS = 20V 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 100 0 VDS , Drain-to-Source Voltage (V) 20 40 60 80 100 120 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ID, Drain-to-Source Current (A) TJ = 150 C OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 TJ = 25 C 1 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 16 0 ISD , Reverse Drain Current (A) C, Capacitance (pF) 2500 = = = = VGS , Gate-to-Source Voltage (V) 3000 1.8 10 1ms Tc = 25C Tj = 150C Single Pulse 10ms 1 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF5NJ540 30 LIMITED BY PACKAGE VGS 25 I D , Drain Current (A) RD VDS D.U.T. RG + -VDD 20 VGS Pulse Width 1 s Duty Factor 0.1 % 15 10 Fig 10a. Switching Time Test Circuit VDS 5 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 P DM 0.05 0.1 0.02 0.01 0.01 0.00001 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF5NJ540 15V L VDS D .U .T. RG IA S VGS 20V D R IV E R + - VD D 0 .01 tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) 400 TOP BOTTOM 300 200 100 0 25 V (B R )D S S ID 7.2A 10A 16A 50 75 100 125 150 Starting TJ , Junction Temperature( C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12V .2F .3F 10V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF5NJ540 Footnotes: Repetitive Rating; Pulse width limited by ISD 16A, di/dt 350 A/s, maximum junction temperature. VDD = 25 V, Starting TJ = 25C, L=1.5mH Peak IAS =16A, VGS = 10 V, RG= 25 Pulse width 300 s; Duty Cycle 2% VDD 100V, TJ 150C Case Outline and Dimensions -- SMD-0.5 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/01 www.irf.com 7