IRG7PG42UDPbF
IRG7PG42UD-EPbF
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 29, 2014
IRG7PG42UDPbF
TO-247AC
E
G C
C
E
G C
C
IRG7PG42UD-EPbF
TO-247AD
G C E
Gate Collector Emitter
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRG7PG42UDPbF TO-247AC Tube 25
IRG7PG42UDPbF
IRG7PG42UD-EPbF TO-247AD Tube 25
IRG7PG42UD-EPbF
VCES = 1000V
IC = 45A, TC = 100°C
TJ(MAX) = 150°C
VCE(ON) typ. = 1.7V @ IC = 30A
E
G
n-channel
C
INSULATED GATE BIPOLAR TRANSISTOR
Features
Low VCE (ON) trench IGBT technology
Low switching losses
Square RBSOA
100% of the parts tested for ILM
Positive VCE (ON) temperature co-efficient
Ultra fast soft recovery co-pak diode
Tight parameter distribution
Lead-free package
Benefits
High efficiency in a wide range of applications
Suitable for a wide range of switching frequencies
due to low VCE(on) and low switching losses
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1000 V
IC @ TC = 25°C Continuous Collector Current (Silicon Limited) 85
IC @ TC = 100°C Continuous Collector Current (Silicon Limited) 45
ICM Pulse Collector Current, VGE = 15V 90
ILM Clamped Inductive Load Current, VGE = 20V 120
A
IF @ TC = 25°C Diode Continuous Forward Current 85
IF @ TC = 100°C Diode Continuous Forward Current 45
IFM Diode Maximum Forward Current 120
VGE Continuous Gate-to-Emitter Voltage ±30 V
PD @ TC = 25°C Maximum Power Dissipation 320 W
PD @ TC = 100°C Maximum Power Dissipation 130
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in.(1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Applications
U.P.S.
Welding
Solar Inverter
Induction heating
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC (IGBT) Junction-to-Case (IGBT) ––– ––– 0.39
RθJC (Diode) Junction-to-Case (Diode) ––– ––– 0.56
°C/W
RθCS Case-to-Sink (flat, greased surface) ––– 0.24 –––
RθJA Junction-to-Ambient (typical socket mount) ––– ––– 40
IRG7PG42UDPbF/IRG7PG42UD-EPbF
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1000 — — V VGE = 0V, IC = 100µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.18 — V/°C VGE = 0V, IC = 2.0mA (25°C-150°C)
VCE(on) Collector-to-Emitter Saturation Voltage — 1.7 2.0 V IC = 30A, VGE = 15V, TJ = 25°C
— 2.1 —
IC = 30A, VGE = 15V, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 V VCE = VGE, IC = 1.0mA
gfe Forward Transconductance — 32 — S VCE = 50V, IC = 30A, PW = 80µs
ICES Collector-to-Emitter Leakage Current — 4.4 100 µA VGE = 0V, VCE = 1000V
— 1200 — VGE = 0V, VCE = 1000V, TJ = 150°C
VFM Diode Forward Voltage Drop — 2.0 2.4 V IF = 30A
— 2.2 — IF = 30A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±30V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge — 157 — IC = 30A
Qge Gate-to-Emitter Charge — 21 — nCVGE = 15V
Qgc Gate-to-Collector Charge — 69 — VCC = 600V
Eon Turn-On Switching Loss — 2105 —
Eoff Turn-Off Switching Loss — 1182 — µJ IC = 30A, VCC = 600V, VGE = 15V
Etotal Total Switching Loss — 3287 — RG = 10, L = 200µH, TJ = 25°C
td(on) Turn-On delay time — 25 — Energy losses include tail & diode
tr Rise time — 32 — ns reverse recovery
td(off) Turn-Off delay time — 229 —
tf Fall time — 63 —
Eon Turn-On Switching Loss — 2978 —
Eoff Turn-Off Switching Loss — 1968 — µJ IC = 30A, VCC = 600V, VGE = 15V
Etotal Total Switching Loss — 4946 — RG = 10, L = 200µH, TJ = 150°C
td(on) Turn-On delay time — 19 — Energy losses include tail & diode
tr Rise time — 32 — ns reverse recovery
td(off) Turn-Off delay time — 290 —
tf Fall time — 154 —
Cies Input Capacitance — 3338 — VGE = 0V
Coes Output Capacitance — 124 — pF VCC = 30V
Cres Reverse Transfer Capacitance — 75 — f = 1.0Mhz
TJ = 150°C, IC = 120A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 800V, Vp ≤ 1000V
Rg = 10, VGE = +20V to 0V
Erec Reverse Recovery Energy of the Diode — 1475 — µJ TJ = 150°C
trr Diode Reverse Recovery Time — 153 — ns VCC = 600V, IF = 30A
Irr Peak Reverse Recovery Current — 34 — A Rg = 10L = 1.0mH
VGE(th)/TJ Threshold Voltage temp. coefficient — -14 — mV/°C VCE=VGE, IC = 1.0mA (25°C - 150°C)
Notes:
V
CC = 80% (VCES), VGE = 20V, L = 22µH, RG = 10.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
R
is measured at TJ of approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note
that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
IRG7PG42UDPbF/IRG7PG42UD-EPbF
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0.1 110 100
f , Frequency ( kHz )
0
10
20
30
40
50
60
Load Current ( A )
For both:
Duty cycle : 50%
Tj = 150°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 95W
0 20 40 60 80 100 120 140 160
TC (°C)
0
50
100
150
200
250
300
350
Ptot (W)
25 50 75 100 125 150 175
TC (°C)
0
20
40
60
80
100
IC (A)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1 10 100 1000 10000
VCE (V)
0.1
1
10
100
1000
IC (A)
10µsec
100µsec
Tc = 25°C
Tj = 150°C
Single Pulse
DC
1msec
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
10 100 1000 10000
VCE (V)
1
10
100
1000
IC (A)
Fig. 5 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
Fig. 3 - Power Dissipation vs.
Case Temperature
Fig. 4 - Forward SOA
TC = 25°C, TJ ≤ 150°C; VGE = 15V
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0246810
VCE (V)
0
20
40
60
80
100
120
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0246810
VCE (V)
0
20
40
60
80
100
120
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0 1.0 2.0 3.0 4.0 5.0 6.0
VF (V)
0
20
40
60
80
100
120
IF (A)
-40°C
25°C
150°C
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
0246810
VCE (V)
0
20
40
60
80
100
120
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
4 8 12 16 20
VGE (V)
0
2
4
6
8
10
12
VCE (V)
ICE = 15A
ICE = 30A
ICE = 60A
Fig. 9 - Typ. Diode Forward Voltage Drop
Characteristics
4 8 12 16 20
VGE (V)
0
2
4
6
8
10
12
VCE (V)
ICE = 15A
ICE = 30A
ICE = 60A
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80µs
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
Fig. 11 - Typical VCE vs. VGE
TJ = 25°C
IRG7PG42UDPbF/IRG7PG42UD-EPbF
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4 8 12 16 20
VGE (V)
0
2
4
6
8
10
12
VCE (V)
ICE = 15A
ICE = 30A
ICE = 60A
4681012
VGE, Gate-to-Emitter Voltage (V)
0
20
40
60
80
100
120
ICE, Collector-to-Emitter Current (A)
TJ = 25°C
TJ = 150°C
010 20 30 40 50 60
IC (A)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
020 40 60 80 100
RG ()
10
100
1000
10000
Swiching Time (ns)
tR
tdOFF
tF
tdON
Fig. 17 - Typ. Switching Time vs. RG
TJ = 150°C; L = 200µH; VCE = 600V, ICE = 30A; VGE = 15V
Fig. 15 - Typ. Switching Time vs. IC
TJ = 150°C; L = 200µH; VCE = 600V, RG = 10; VGE = 15V
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V
0 102030405060
IC (A)
0
1000
2000
3000
4000
5000
6000
7000
Energy (µJ)
EOFF
EON
Fig. 12 - Typical VCE vs. VGE
TJ = 150°C
020 40 60 80 100
RG ()
1000
2000
3000
4000
5000
6000
Energy (µJ)
EON
EOFF
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 200µH; VCE = 600V, ICE = 30A; VGE = 15V
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 200µH; VCE = 600V, RG = 10; VGE = 15V
IRG7PG42UDPbF/IRG7PG42UD-EPbF
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15 20 25 30 35 40 45 50 55 60
IF (A)
10
20
30
40
50
IRR (A)
RG =
RG =
RG =
RG =
0 200 400 600 800 1000 1200 1400
diF /dt (A/µs)
2000
3000
4000
5000
6000
7000
8000
9000
QRR (nC)
30A
60A
15A
15 20 25 30 35 40 45 50 55 60
IF (A)
500
1000
1500
2000
2500
3000
3500
Energy (µJ)
RG = 5.0
RG = 10
RG = 47
RG = 100
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 600V; VGE = 15V; TJ = 150°C
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 150°C
0200 400 600 800 1000 1200
diF /dt ( A/µs)
20
25
30
35
40
IRR (A)
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 600V; VGE = 15V; IF = 30A; TJ = 150°C
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 150°C
020 40 60 80 100
RG (
20
25
30
35
40
IRR (A)
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 150°C
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1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Ri (°C/W) i (sec)
0.1254 0.000515
0.0937 0.000515
0.1889 0.001225
0.1511 0.018229
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) i (sec)
0.1306 0.000313
0.1752 0.002056
0.0814 0.008349
0.0031 0.043100
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
Fig. 25 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
0100 200 300 400 500 600
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
0 20406080100120140160180
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
VCES = 600V
VCES = 400V
Fig. 23 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 30A
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0
1K
VCC
DUT
L
L
Rg
80 V
DUT VCC
+
-
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
L
Rg
VCC
DUT /
DRIVER
diode clamp /
DUT
-5V
Switching Loss
Fig.C.T.3 - Switching Loss Circuit
G force
C sense
100K
DUT
0.0075µF
D1 22K
E force
C force
E sense
Fig.C.T.4 - BVCES Filter Circuit
-100
0
100
200
300
400
500
600
700
800
900
-0.5 0 0.5 1 1.5 2
time(µs)
VCE
(V)
-10
0
10
20
30
40
50
60
70
80
90
ICE (A)
90% ICE
5% VCE
5% ICE
Eof f Lo s s
t
f
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.3
IRG7PG42UDPbF/IRG7PG42UD-EPbF
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TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
YEAR 1 = 2001
DATE CODE
PART NUMBER
INTERNATIONAL
LOGO
RECTIFIER
ASSEMBLY
56 57
IRFPE30
135H
LINE H
indicates "Lead-Free" WEEK 35
LOT CODE
IN THE ASSEMBLY LINE "H"
ASSEMBLED ON WW 35, 2001
Notes: This part marking information applies to devices produced after 02/26/2001
Note: "P" in assembly line position
EXAMPLE:
WITH ASSEMBLY
THIS IS AN IRFPE30
LOT CODE 5657
TO-247AC Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AC package is not recommended for Surface Mount Application.
IRG7PG42UDPbF/IRG7PG42UD-EPbF
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TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
ASSEM BLY YEAR 0 = 2000
ASSEM BLED ON W W 35, 2000
IN THE ASSEM BLY LINE "H"
EXAM PLE: THIS IS AN IRG P30B120KD-E
LOT CO DE 5657
WITH ASSEMBLY PART NUMBER
DATE CODE
IN T E R N A T IO N A L
RECTIFIER
LO G O
035H
5 6 5 7
WEEK 35
LIN E H
LOT CODE
N o te : "P " in a s s e m b ly lin e p o s itio n
indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AD package is not recommended for Surface Mount Application.
IRG7PG42UDPbF/IRG7PG42UD-EPbF
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IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Qualification Information†
Qualification Level Industrial
(per JEDEC JESD47F) ††
Moisture Sensitivity Level TO-247AC N/A
RoHS Compliant Yes
TO-247AD N/A
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
