IRG7PG42UDPbF IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR C Features Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-free package Benefits High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to low VCE(on) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operation Applications U.P.S. Welding Solar Inverter Induction heating Base part number Package Type IRG7PG42UDPbF IRG7PG42UD-EPbF TO-247AC TO-247AD VCES = 1000V IC = 45A, TC = 100C G TJ(MAX) = 150C VCE(ON) typ. = 1.7V @ IC = 30A E n-channel C C E C G IRG7PG42UDPbF TO-247AC G Gate C E IRG7PG42UD-EPbF TO-247AD C Collector Standard Pack Form Quantity Tube Tube G E Emitter Orderable Part Number IRG7PG42UDPbF IRG7PG42UD-EPbF 25 25 Absolute Maximum Ratings VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 25C IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current (Silicon Limited) Continuous Collector Current (Silicon Limited) Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. 1000 85 45 90 120 85 45 120 30 320 130 -55 to +150 Units V A V W C 300 (0.063 in.(1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf*in (1.1 N*m) Thermal Resistance Parameter RJC (IGBT) Junction-to-Case (IGBT) RJC (Diode) Junction-to-Case (Diode) RCS Case-to-Sink (flat, greased surface) RJA Junction-to-Ambient (typical socket mount) 1 www.irf.com (c) 2014 International Rectifier Min. --- --- --- --- Submit Datasheet Feedback Typ. --- --- 0.24 --- Max. 0.39 0.56 --- 40 Units C/W April 29, 2014 IRG7PG42UDPbF/IRG7PG42UD-EPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. V(BR)CES Collector-to-Emitter Breakdown Voltage 1000 -- -- 0.18 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage -- 1.7 -- 2.1 VGE(th) Gate Threshold Voltage 3.0 -- -- -14 VGE(th)/TJ Threshold Voltage temp. coefficient gfe Forward Transconductance -- 32 ICES Collector-to-Emitter Leakage Current -- 4.4 -- 1200 VFM Diode Forward Voltage Drop -- 2.0 -- 2.2 IGES Gate-to-Emitter Leakage Current -- -- Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Qg Total Gate Charge -- 157 Qge Gate-to-Emitter Charge -- 21 Qgc Gate-to-Collector Charge -- 69 Eon Turn-On Switching Loss -- 2105 Eoff Turn-Off Switching Loss -- 1182 Etotal Total Switching Loss -- 3287 td(on) Turn-On delay time -- 25 tr Rise time -- 32 td(off) Turn-Off delay time -- 229 tf Fall time -- 63 Eon Turn-On Switching Loss -- 2978 Eoff Turn-Off Switching Loss -- 1968 Etotal Total Switching Loss -- 4946 td(on) Turn-On delay time -- 19 tr Rise time -- 32 td(off) Turn-Off delay time -- 290 tf Fall time -- 154 Cies Input Capacitance -- 3338 Coes Output Capacitance -- 124 Cres Reverse Transfer Capacitance -- 75 RBSOA Reverse Bias Safe Operating Area Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current Max. -- -- 2.0 -- 6.0 -- -- 100 -- 2.4 -- 100 Units Conditions V VGE = 0V, IC = 100A V/C VGE = 0V, IC = 2.0mA (25C-150C) V IC = 30A, VGE = 15V, TJ = 25C IC = 30A, VGE = 15V, TJ = 150C V VCE = VGE, IC = 1.0mA mV/C VCE=VGE, IC = 1.0mA (25C - 150C) S VCE = 50V, IC = 30A, PW = 80s A VGE = 0V, VCE = 1000V VGE = 0V, VCE = 1000V, TJ = 150C V IF = 30A IF = 30A, TJ = 150C nA VGE = 30V Max. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Units nC J ns J ns pF FULL SQUARE -- -- -- 1475 153 34 -- -- -- J ns A Conditions IC = 30A VGE = 15V VCC = 600V IC = 30A, VCC = 600V, VGE = 15V RG = 10, L = 200H, TJ = 25C Energy losses include tail & diode reverse recovery IC = 30A, VCC = 600V, VGE = 15V RG = 10, L = 200H, TJ = 150C Energy losses include tail & diode reverse recovery VGE = 0V VCC = 30V f = 1.0Mhz TJ = 150C, IC = 120A VCC = 800V, Vp 1000V Rg = 10, VGE = +20V to 0V TJ = 150C VCC = 600V, IF = 30A Rg = 10L = 1.0mH Notes: VCC = 80% (VCES), VGE = 20V, L = 22H, RG = 10. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. R is measured at TJ of approximately 90C. Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 2 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 29, 2014 IRG7PG42UDPbF/IRG7PG42UD-EPbF 60 For both: Duty cycle : 50% Tj = 150C Tsink = 90C Gate drive as specified Power Dissipation = 95W Load Current ( A ) 50 40 30 20 10 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 350 300 80 250 Ptot (W) IC (A) 60 40 200 150 100 20 50 0 0 25 50 75 100 125 150 0 175 20 40 60 80 100 120 140 160 T C (C) T C (C) Fig. 3 - Power Dissipation vs. Case Temperature Fig. 2 - Maximum DC Collector Current vs. Case Temperature 1000 1000 100 100 IC (A) IC (A) 10sec 10 100sec DC 1 1msec Tc = 25C Tj = 150C Single Pulse 1 0.1 1 10 100 1000 10000 VCE (V) Fig. 4 - Forward SOA TC = 25C, TJ 150C; VGE = 15V 3 10 www.irf.com (c) 2014 International Rectifier 10 100 1000 10000 VCE (V) Fig. 5 - Reverse Bias SOA TJ = 150C; VGE = 20V Submit Datasheet Feedback April 29, 2014 IRG7PG42UDPbF/IRG7PG42UD-EPbF 120 120 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 100 100 80 ICE (A) ICE (A) 80 60 60 40 40 20 20 0 0 0 2 4 6 8 10 0 2 4 10 Fig. 6 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s Fig. 7 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s 120 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 100 -40C 25C 150C 80 IF (A) 80 60 60 40 40 20 20 0 0 0 2 4 6 8 10 0.0 1.0 2.0 3.0 VCE (V) 12 10 10 6.0 8 VCE (V) ICE = 15A ICE = 30A ICE = 60A 6 5.0 Fig. 9 - Typ. Diode Forward Voltage Drop Characteristics 12 8 4.0 VF (V) Fig. 8 - Typ. IGBT Output Characteristics TJ = 150C; tp = 80s VCE (V) 8 VCE (V) 100 ICE = 15A ICE = 30A ICE = 60A 6 4 4 2 2 0 0 4 4 6 VCE (V) 120 ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 8 12 16 20 4 8 12 16 VGE (V) VGE (V) Fig. 10 - Typical VCE vs. VGE TJ = -40C Fig. 11 - Typical VCE vs. VGE TJ = 25C www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback 20 April 29, 2014 IRG7PG42UDPbF/IRG7PG42UD-EPbF 120 ICE, Collector-to-Emitter Current (A) 12 10 VCE (V) 8 ICE = 15A ICE = 30A ICE = 60A 6 4 2 100 80 T J = 25C T J = 150C 60 40 20 0 0 4 8 12 16 4 20 6 VGE (V) 10 12 Fig. 13 - Typ. Transfer Characteristics VCE = 50V Fig. 12 - Typical VCE vs. VGE TJ = 150C 1000 7000 6000 tF Swiching Time (ns) 5000 Energy (J) 8 VGE, Gate-to-Emitter Voltage (V) 4000 EON 3000 2000 td OFF 100 tR EOFF 1000 td ON 10 0 0 10 20 30 40 50 0 60 10 20 30 Fig. 14 - Typ. Energy Loss vs. IC TJ = 150C; L = 200H; VCE = 600V, RG = 10; VGE = 15V 40 50 60 IC (A) I C (A) Fig. 15 - Typ. Switching Time vs. IC TJ = 150C; L = 200H; VCE = 600V, RG = 10; VGE = 15V 10000 6000 Swiching Time (ns) Energy (J) 5000 EON 4000 EOFF 3000 1000 td OFF tF 100 tR 2000 td ON 10 1000 0 20 40 60 80 100 0 20 40 60 80 100 RG () RG () Fig. 16 - Typ. Energy Loss vs. RG TJ = 150C; L = 200H; VCE = 600V, ICE = 30A; VGE = 15V Fig. 17 - Typ. Switching Time vs. RG TJ = 150C; L = 200H; VCE = 600V, ICE = 30A; VGE = 15V 5 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 29, 2014 IRG7PG42UDPbF/IRG7PG42UD-EPbF 50 40 R G = 35 RG = RG = IRR (A) IRR (A) 40 30 RG = 20 30 25 10 20 15 20 25 30 35 40 45 50 55 60 0 20 40 IF (A) 80 100 Fig. 19 - Typ. Diode IRR vs. RG TJ = 150C Fig. 18 - Typ. Diode IRR vs. IF TJ = 150C 9000 40 8000 35 60A 7000 QRR (nC) IRR (A) 60 RG ( 30 6000 5000 30A 4000 25 15A 3000 2000 20 0 200 400 600 800 1000 0 1200 200 400 600 800 1000 1200 1400 diF /dt (A/s) diF /dt ( A/s) Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 600V; VGE = 15V; IF = 30A; TJ = 150C Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 600V; VGE = 15V; TJ = 150C 3500 Energy (J) RG = 5.0 3000 RG = 10 RG = 47 2500 RG = 100 2000 1500 1000 500 15 20 25 30 35 40 45 50 55 60 IF (A) Fig. 22 - Typ. Diode ERR vs. IF TJ = 150C 6 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 29, 2014 IRG7PG42UDPbF/IRG7PG42UD-EPbF 16 10000 VGE, Gate-to-Emitter Voltage (V) 14 Capacitance (pF) Cies 1000 100 Coes VCES = 600V VCES = 400V 12 10 Cres 8 6 4 2 0 10 0 100 200 300 400 500 0 600 20 40 60 80 100 120 140 160 180 Q G, Total Gate Charge (nC) VCE (V) Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 24 - Typical Gate Charge vs. VGE ICE = 30A 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.01 J 0.02 0.01 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 3 2 4 3 Ri (C/W) i (sec) 0.1306 0.000313 0.1752 0.002056 0.0814 0.008349 0.0031 0.043100 C 4 Ci= iRi Ci= iRi 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig. 25 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 J 0.02 0.01 0.01 R1 R1 J 1 R2 R2 R3 R3 C 2 1 2 3 Ri (C/W) i (sec) 0.1254 0.000515 0.0937 0.000515 0.1889 0.001225 0.1511 0.018229 R4 R4 4 3 C 4 Ci= iRi Ci= iRi 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 29, 2014 IRG7PG42UDPbF/IRG7PG42UD-EPbF L L 0 80 V + VCC DUT - DUT 1K VCC Rg Fig.C.T.2 - RBSOA Circuit Fig.C.T.1 - Gate Charge Circuit (turn-off) diode clamp / DUT C force L 100K D1 -5V 22K C sense DUT / DRIVER VCC DUT G force 0.0075F Rg E sense E force Switching Loss Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - BVCES Filter Circuit 900 90 800 80 tf 700 70 600 60 50 90% ICE 400 300 40 30 5% V C E 200 20 5% IC E 100 10 0 -100 -0.5 ICE (A) VC E (V) 500 0 Eof f Loss 0 0.5 1 -10 1.5 2 time(s) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150C using Fig. CT.3 8 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 29, 2014 IRG7PG42UDPbF/IRG7PG42UD-EPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 29, 2014 IRG7PG42UDPbF/IRG7PG42UD-EPbF TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM B LED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F re e " PART N U M BER IN T E R N A T IO N A L R E C T IF IE R LO G O 56 035H 57 ASSEM B LY LO T C O D E D A TE C O D E YE A R 0 = 2 0 0 0 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 29, 2014 IRG7PG42UDPbF/IRG7PG42UD-EPbF Qualification Information Industrial Qualification Level Moisture Sensitivity Level TO-247AC (per JEDEC JESD47F) N/A TO-247AD N/A Yes RoHS Compliant Qualification standards can be found at International Rectifier's web site: http://www.irf.com/product-info/reliability/ Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 11 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 29, 2014