DMP3015LSSQ 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON) Max ID Max TA = +25C 11m @ VGS = -10V -13A 17m @ VGS = -4.5V -9.9A BVDSS * * * * * * * * * -30V Description Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data * * This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. * Backlighting * Power Management Functions * DC-DC Converters * * * * Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish--Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074g (Approximate) SO-8 Top View S D S D S D G D D G Top View Internal Schematic S Equivalent Circuit Ordering Information (Note 5) Part Number DMP3015LSSQ-13 Notes: Case SO-8 Packaging 2500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q10x and standard products are electrically and thermally the same, except where specified. For more information, please refer to https://www.diodes.com/quality/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 = Manufacturer's Marking P3015LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 18 = 2018) WW = Week (01 - 53) P 3015LS YY WW 1 DMP3015LSSQ Document number: DS38013 Rev. 3 - 2 4 1 of 6 www.diodes.com November 2018 (c) Diodes Incorporated DMP3015LSSQ Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Units V V IDM Value -30 20 -13 -9.75 -45 Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient Symbol PD RJA Value 2.5 50 Unit W C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Drain-Source Voltage Gate-Source Voltage Drain Current (Note 6) Symbol VDSS VGSS Steady State TA = +25C TA = +70C ID Pulsed Drain Current (Note 7) A A Thermal Characteristics Notes: 6. Device mounted on 2 oz. Copper pads on FR-4 PCB with RJA = +50C/W. 7. Pulse width 10S, Duty Cycle 1%. Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS -30 -- -- -- -- -- -- -1 100 V A nA VGS = 0V, ID = -250A VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) RDS(ON) -2 11 17 -- -1.1 V Static Drain-Source On-Resistance -- 9 14 15 -- VDS = VGS, ID = -250A VGS = -10V, ID = -13A VGS = -4.5V, ID = -10A VDS = -15V, ID = -8A VGS = 0V, IS = -2.1A Forward Transconductance Diode Forward Voltage (Note 8) DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs VSD -1 -- -- -- -0.5 Ciss Coss Crss -- -- -- 2,748 357 356 -- -- -- pF pF pF VDS = -20V, VGS = 0V f = 1.0MHz Gate Resistance RG -- 2.0 -- VDS = 0V, VGS = 0V f = 1.0MHz -- -- -- -- -- -- -- -- 30.0 60.4 7.2 16.4 11.2 12.4 104.9 61.7 -- -- -- -- -- -- -- -- nC VDS = -10V, VGS = -4.5V, ID = -13A VDS = -10V, VGS = -10V, ID = -13A VDS = -10V, VGS = -10V, ID = -13A VDS = -10V, VGS = -10V, ID = -13A nS VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0 m S V SWITCHING CHARACTERISTICS (Note 9) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: Qg Qgs Qgd td(on) tr td(off) tf 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMP3015LSSQ Document number: DS38013 Rev. 3 - 2 2 of 6 www.diodes.com November 2018 (c) Diodes Incorporated DMP3015LSSQ 20.0 ID(A) @ VGS = 10V ID(A) @ VGS = 4.5V 16.0 ID, DRAIN CURRENT (A) VDS = -5.0V ID(A) @ VGS = 4.0V ID(A) @ VGS = 3.5V 12.0 ID(A) @ VGS = 3.0V 8.0 TA = 85C TA = 125C 4.0 TA = 25C TA = 150C ID(A) @ VGS = 2.5V 0.0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristics TA = -55C 3 TA = 150 C TA = 125 C TA = 85C VGS = -4.5V TA = 25C VGS = -10V TA = -55C VGS = -4.5V 10,000 Ciss C, CAPACITANCE (pF) RDSON, STATIC DRAIN-SOURCE ON-RESISTANCE () f = 1MHz VGS = -4.5V ID = -5A 1,000 Coss Crss VGS = -10V ID = -10A 100 0 DMP3015LSSQ Document number: DS38013 Rev. 3 - 2 3 of 6 www.diodes.com 10 20 5 15 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Total Capacitance 30 November 2018 (c) Diodes Incorporated -VGS(th), GATE THRESHOLD VOLTAGE (V) DMP3015LSSQ VGS = 0V ID = -250mA ID = -1mA 100 ID, DRAIN CURRENT (A) R DS(on) Limited 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 TJ(m ax) = 150C TA = 25C PW = 100s V GS = 4.5V Single Pulse DUT on 1 * MRP Board 0.01 0.1 1 10 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 9 SOA, Safe Operation Area DMP3015LSSQ Document number: DS38013 Rev. 3 - 2 100 4 of 6 www.diodes.com November 2018 (c) Diodes Incorporated DMP3015LSSQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 E 1 b ) ides 7 R e Q c 43 A 1 0. E1 45 All s 9 ( h A1 E0 L Gauge Plane Seating Plane SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e -- -- 1.27 h -- -- 0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm D Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 X1 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 Y1 Y C DMP3015LSSQ Document number: DS38013 Rev. 3 - 2 X 5 of 6 www.diodes.com November 2018 (c) Diodes Incorporated DMP3015LSSQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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