Product Data Sheet August 5, 2008 High Power DC - 18GHz SPDT FET Switch TGS2306 Key Features and Performance * * * * * * * * Preliminary Measured Performance Description VC1 = 0V; VC2 = -5V Insertion Loss (dB) 5 S21 S11 S22 S13 -2 -4 0 -5 -10 -15 -6 -20 -25 -8 -30 -35 -10 -40 0 2 4 6 8 10 12 14 Frequency (GHz) 16 18 20 Isolation, Return Loss (dB) 10 0 DC - 18 GHz Frequency Range 29 dBm Input P1dB @ VC = -5V > 30 dB Isolation <1 nsec switching speed Control Voltage Application from Either Side of MMIC -3V or -5V Control Voltage 0.5m pHEMT 3MI Technology Chip Dimensions: 0.83 x 1.11 x 0.10 mm (0.033 x 0.044 x 0.004 inches) The TriQuint TGS2306 is a GaAs singlepole, double-throw (SPDT) FET monolithic switch designed to operate over the DC to 18GHz frequency range. This switch not only maintains a high isolation loss and a low insertion loss across a wide bandwidth, but also has very low power consumption and high power handling of 29dBm or greater input P1dB at VC = 5V. These advantages, along with the small size of the chip, make the TGS2306 ideal for use in high-speed radar and communication applications. Note: Datasheet is subject to change without notice 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Product Data Sheet August 5, 2008 TGS2306 TABLE I MAXIMUM RATINGS Symbol Parameter Value Notes VC Control Voltage -7 V 1/ 2/ IC Control Current 2.25 mA 1/ 2/ PIN Input Continuous Wave Power 29 dBm 1/ 2/ PD Power Dissipation 1.2 W 1/ 2/ 3/ TCH TM TSTG 0 Operating Channel Temperature 150 C 4/ 0 Mounting Temperature (30 Seconds) 320 C -65 to 150 0C Storage Temperature 1/ These ratings represent the maximum operable values for this device 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD at a package base temperature of 70C 3/ When operated at this bias condition with a baseplate temperature of 70C, the MTTF is reduced to 1.0E+6 hours 4/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TABLE II THERMAL INFORMATION Parameter Test Conditions JC Thermal Resistance (channel to backside of carrier) RF input =29dBm Insertion Loss ~ 2dB o TBASE = 70 C TCH (oC) JC (C/W) TM (HRS) 90 68 3.7 E+8 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. TABLE III TRUTH TABLE Selected RF Output RF Out 1 RF Out 2 VC1 VC2 0V -5 V -5 V 0V 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Product Data Sheet August 5, 2008 TGS2306 Fixtured Measurement 0.0 Insertion Loss (dB) -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) 0 S11 S22 Return Loss (dB) -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Product Data Sheet August 5, 2008 TGS2306 Fixtured Measurement 0 -5 Isolation (dB) -10 -15 -20 -25 -30 -35 -40 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) 0.0 -35degC +25degC +85degC Insertion Loss (dB) -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) 4 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Product Data Sheet August 5, 2008 Switching Speed Measurements Off to On Time=0 50% Control Signal to 90% RF = 480 psec 100 psec/div On to Off 50% Control Signal to 10% RF = 320 psec 50 psec/div Measurement performed using a pulse generator with 100 psec rise/fall times driving 50 ohm transmission lines that were terminated in 50 ohms and attached to the VC1 and VC2 control inputs. Pulse generator provided complementary outputs. 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Product Data Sheet August 5, 2008 TGS2306 Mechanical Drawing 3 4 7 6 5 .11 [0.004] .24 [0.009] 1.11 [0.044] .99 [0.039] 2 .55 [0.022] 1 .11 [0.004] .83 [0.033] .68 [0.027] .00 [0.000] .00 [0.000] Units: millimeters [inches] Thickness: 0.10 [0.004] (reference only) Chip edge to bond pad dimensions are shown to center of bond pads. Chip size tolerance: 0.05 [0.002] RF ground through backside Bond Pad #1 Bond Pad #2 Bond Pad #3 Bond Pad #4 Bond Pad #5 Bond Pad #6 Bond Pad #7 RF Input VC1 VC2 RF Output 1 RF Output 2 VC2 VC1 0.10 x 0.20 0.10 x 0.10 0.10 x 0.10 0.20 x 0.10 0.20 x 0.10 0.10 x 0.10 0.10 x 0.10 [0.004 x 0.008] [0.004 x 0.004] [0.004 x 0.004] [0.008 x 0.004] [0.008 x 0.004] [0.004 x 0.004] [0.004 x 0.004] 6 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Product Data Sheet August 5, 2008 TGS2306 Chip Assembly & Bonding Diagram For optimum insertion loss and return loss, a single 0.001" bondwire of length 35 mils should be used. This will be approximately 0.42nH. Differences in bondwire length will have an impact on switch performance. VC1 & VC2 can be applied from either side of the MMIC. DC blocks are required for the RF input and output. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 7 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Product Data Sheet August 5, 2008 TGS2306 Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. (30 seconds maximum) An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com