All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 12 Rev. 07, 2007-04-04
PTFA261301E
PTFA261301F
Description
The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt,
internally-matched GOLDMOS® FETs intended for ultra-linear
applications. They are characterized for CDMA, CDMA2000, Super3G
(3GPP TSG RAN), and WiMAX operation from 2620 to 2680 MHz. Full
gold metallization ensures excellent device lifetime and reliability.
Thermally-Enhanced High Power RF LDMOS FETs
130 W, 2.62 – 2.68 GHz
3-Carrier CDMA2000 Performance
at 28 Volts
IDQ = 1.4 A, ƒ = 2680 MHz
-70
-60
-50
-40
-30
-20
-10
0 5 10 15 20 25 30 35
Output Power, avg. (W)
Adj. Channel Power Ratio (dBc)
0
5
10
15
20
25
30
Drain Efficiency (%)
Alt2
Alt
Efficiency
ACPR
RF Performance
CDMA IS-95 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 1.4 A, POUT = 26 W average, ƒ = 2680 MHz
Characteristic Symbol Min Typ Max Unit
Adjacent Channel Power Ratio ACPR —–45 —dBc
Gain Gps —13 —dB
Drain Efficiency ηD—24 —%
*See Infineon distributor for future availability.
PTFA261301E
Package H-30260-2
PTFA261301F
Package H-31260-2
Features
•Thermally-enhanced, Pb-free packages,
RoHS-compliant
•Broadband internal matching
•Typical CDMA performance at 2.68 GHz
- Average output power = 26 W
- Linear Gain = 13 dB
- Efficiency = 24%
•Typical CW performance, 2680 MHz, 28 V
- Output power at P–1dB = 152 W
- Efficiency = 47%
•Integrated ESD protection: Human Body
Model, Class 2 (minimum)
•Excellent thermal stability, low HCI drift
•Capable of handling 10:1 VSWR @ 28 V, 130
W (CW) output power
Data Sheet 2 of 12 Rev. 07, 2007-04-04
PTFA261301E
PTFA261301F
RF Performance (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1.4 A, POUT = 130 W PEP, ƒ = 2680 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 12.5 13.5 —dB
Drain Efficiency ηD34.5 36 —%
Intermodulation Distortion IMD —–28.5 –27 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.07 —Ω
Operating Gate Voltage VDS = 28 V, IDQ = 1.4 A VGS 2.0 2.4 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PD449 W
Above 25°C derate by 2.56 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 130 W CW) RθJC 0.39 °C/W
Ordering Information
Type Package Outline Package Description Marking
PTFA261301E H-30260-2 Thermally-enhanced slotted flange, single-ended PTFA261301E
PTFA261301F H-31260-2 Thermally-enhanced earless flange, single-ended PTFA261301F
*See Infineon distributor for future availability.
Data Sheet 3 of 12 Rev. 07, 2007-04-04
PTFA261301E
PTFA261301F
CDMA IS-95
at 28 Volts
IDQ = 1.4 A, ƒ = 2680 MHz, tone spacing = 1 MHz
-70
-60
-50
-40
-30
-20
-10
0 5 10 15 20 25 30 35
Output Power, avg. (W)
Adj. Channel Power Ratio (dBc)
0
5
10
15
20
25
30
Drain Efficiency (%)
ACPR
Efficiency
Alt2
Alt
CDMA IS-95
at 32 Volts
IDQ = 1.4 A, ƒ = 2680 MHz, tone spacing = 1 MHz
-70
-60
-50
-40
-30
-20
-10
0 5 10 15 20 25 30 35
Output Power, avg. (W)
Adj. Channel Power Ratio (dBc)
0
5
10
15
20
25
30
Drain Efficiency (%)
ACPR
Efficiency
Alt
Alt2
Typical Performance (data taken in a production test fixture)
Two–tone Performance
at 28 V
IDQ = 1.4 A, ƒ = 2680 MHz, tone spacing = 1 MHz
-70
-60
-50
-40
-30
-20
-10
0
020 40 60 80 100
Output Power, avg. (W)
IM3, 5, 7 (dBc)
5
10
15
20
25
30
35
40
Drain Efficiency (%)
Efficiency
IM7
IM3
IM5
Two-tone Performance
at 32 V
IDQ = 1.4 A, ƒ = 2680 MHz, tone spacing = 1 MHz
-70
-60
-50
-40
-30
-20
-10
0
020 40 60 80 100
Output Power, avg. (W)
IM3, 5, 7 (dBc)
5
10
15
20
25
30
35
40
Drain Efficiency (%)
Efficiency
IM7
IM3
IM5
Data Sheet 4 of 12 Rev. 07, 2007-04-04
PTFA261301E
PTFA261301F
CW Drive-up Efficiency
IDQ = 1.4 A, ƒ = 2680 MHz
10
20
30
40
50
60
0 50 100 150 200
Output Power (W)
Drain Efficiency (%)
27 V
28 V
32 V
Typical Performance (cont.)
CDMA2000 Performance
at 32 Volts
IDQ = 1.4 A, ƒ = 2680 MHz, tone spacing = 1 MHz
-70
-60
-50
-40
-30
-20
-10
0 5 10 15 20 25 30 35
Output Power, avg. (W)
Adj. Channel Power Ratio (dBc)
0
5
10
15
20
25
30
Drain Efficiency (%)
Alt2
Alt
Efficiency
ACPR
Gain and Return Loss
vs. Frequency
VDD = 28 V, IDQ = 1.4 A, POUT = 30 W
10
11
12
13
14
15
2.60 2.62 2.64 2.66 2.68 2.70
Frequency (GHz)
Gain (dB)
-25
-20
-15
-10
-5
0
Return Loss (dB)
Return Loss
Gain
Power Sweep
VDD = 28 V, ƒ = 2680 MHz
12
13
14
15
35 40 45 50 55
Output Power (dBm)
Power Gain (dB)
IDQ = 1.4 A
IDQ = 1.1 A
IDQ = 1.7 A
Data Sheet 5 of 12 Rev. 07, 2007-04-04
PTFA261301E
PTFA261301F
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 1.4 A, ƒ = 2680 MHz
10
11
12
13
14
15
16
35 40 45 50 55
Output Power (dBm)
Gain (dB)
0
10
20
30
40
50
60
Drain Efficiency (%)
Efficiency
Gain
Gain & Efficiency vs. Output Power
VDD = 32 V, IDQ = 1.4 A, ƒ = 2680 MHz
10
11
12
13
14
15
16
35 40 45 50 55
Output Power (dBm)
Gain (dB)
0
10
20
30
40
50
60
Drain Efficiency (%)
Efficiency
Gain
2-Tone Performance
Gain, Efficiency & RL vs. Frequency
VDD = 28 V, IDQ = 1.4 A, POUT = 65 W
10
15
20
25
30
35
40
2580 2600 2620 2640 2660 2680 2700
Frequency (MHz)
Gain (dB), Efficiency (%)
-20
-15
-10
-5
Input Return Loss (dB)
Gain
Efficiency
RL
Typical Performance (cont.)
3-Carrier CDMA2000 Performance
VDD = 28 V, IDQ = 1.4 A, ƒ = 2680 MHz
0
10
20
30
40
50
60
35 38 41 44 47 50
Output Power, Avg. (dBm)
Drain Efficiency (%)
-70
-65
-60
-55
-50
-45
-40
Adjacent Channel Power
Ratio (dBc)
ACP, 90°C
ALT, 90°C
ACP, 25°C
ALT, 25°C
Efficiency, 90°C
Efficiency,
25°C
Data Sheet 6 of 12 Rev. 07, 2007-04-04
PTFA261301E
PTFA261301F
WiMAX Performance
VDD = 28 V, IDQ = 1.25 A,
(modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz,
sample rate = 4 MHz)
0
5
10
15
20
25
30
15 20 25 30 35 40 45 50
Output Power (dBm)
Efficiency (%)
-45
-40
-35
-30
-25
-20
-15
EVM (dBc)
Efficiency
ƒ = 2.62 GHz
ƒ = 2.68 GHz
ƒ = 2.65 GHz
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 020 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
0.28 A
0.83 A
1.39 A
2.09 A
4.17 A
6.26 A
8.34 A
10.43 A
12.52 A
Typical Performance (cont.)
WiMAX Performance
VDD = 28 V, IDQ = 1.25 A, ƒ = 2650 MHz,
(modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz,
sample rate = 4 MHz)
-45
-40
-35
-30
-25
-20
15 20 25 30 35 40 45 50
Output Power (dBm)
EVM (dB)
t = +25 °C
t = +85 °C
t = –20 °C
WiMAX Performance
VDD = 28 V, ƒ = 2650 MHz
(modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz,
sample rate = 4 MHz)
-45
-40
-35
-30
-25
-20
15 20 25 30 35 40 45 50
Output Power (dBm)
EVM (dB)
IDQ = 0.80 A
IDQ = 1.75 A
IDQ = 1.25 A
Data Sheet 7 of 12 Rev. 07, 2007-04-04
PTFA261301E
PTFA261301F
0.1
0.2
0.1
0.1
0
.2
H
S
T
O
W
A
R
D
G
E
NE
R
A
T
<-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
Z Source
2710 MHz
2710 MHz
2590 MHz
Z Load 2590 MHz
Z Source Z Load
G
S
D
Frequency Z Source WZ Load W
MHz RjX RjX
2590 6.7 0.45 1.6 –2.7
2620 5.8 –0.1 1.5 –2.8
2650 5.8 0.4 1.4 –3.0
2680 6.3 0.3 1.5 –3.4
2710 5.4 0.3 1.3 –3.7
See next page for circuit information
Z0 = 50 Ω
Broadband Circuit Impedance
Data Sheet 8 of 12 Rev. 07, 2007-04-04
PTFA261301E
PTFA261301F
a261301ef_sch
DUT
RF_IN RF_OUT
R3
2K VR4
2K V
C3
0.001µF
C2
0.001µF
BCP56
R2
1.3K VR1
1.2K V
LM7805
VDD
QQ1
Q1
R5
5.1K V
4.5pF
10µF
35V
4.5pF0.1µF
1.0pF
l1l2l3
l4l8
l9
10V
R6
R7C5C4 C6
C8
C9
V
5.1K
l6
l5
C7
0.7pF
l7
4.5pF
1µF 10µF
50V
4.5pF 0.1µF
4.5pF 1µF 0.1µF
l10 l13 l14
C10 C11 C12
C19
C17C16C15C14
L1
L2
l11 l12
0.5pF
C18
VDD
C13
10µF
50V
C1
0.001µF
Reference Circuit
Reference circuit schematic for ƒ = 2680 MHz
Circuit Assembly Information
DUT PTFA261301E or PTFA261301F LDMOS Transistor
PCB 0.76 mm [.030"] thick, εr = 4.5 Rogers TMM4 2 oz. copper
Microstrip Electrical Characteristics at 2680 MHz1Dimensions: L x W (mm) Dimensions: L x W (in.)
l10.123 λ, 50.0 Ω7.47 x 1.47 0.294 x 0.058
l20.137 λ, 41.3 Ω8.18 x 1.91 0.322 x 0.075
l30.018 λ, 41.3 Ω1.09 x 1.91 0.043 x 0.075
l40.080 λ, 59.0 Ω4.95 x 1.02 0.195 x 0.040
l50.265 λ, 59.0 Ω16.33 x 1.02 0.643 x 0.040
l60.022 λ, 14.7 Ω1.22 x 7.62 0.048 x 0.300
l70.090 λ, 8.0 Ω4.88 x 15.24 0.192 x 0.600
l8, l90.250 λ, 55.0 Ω15.37 x 1.17 0.605 x 0.046
l10 0.056 λ, 4.8 Ω3.35 x 29.85 0.132 x 1.175
l11 (taper) 0.117 λ, 4.8 Ω / 50.0 Ω6.35 x 29.85 / 1.42 0.250 x 1.175 / 0.056
l12 0.036 λ, 50.0 Ω2.16 x 1.42 0.085 x 0.056
l13 0.113 λ, 50.0 Ω6.86 x 1.42 0.270 x 0.056
l14 0.057 λ, 50.0 Ω3.48 x 1.42 0.137 x 0.056
1Electrical characteristics are rounded.
Data Sheet 9 of 12 Rev. 07, 2007-04-04
PTFA261301E
PTFA261301F
Reference circuit assembly diagram (not to scale)*
Reference Circuit (cont.)
Component Description Suggested Supplier P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4 Tantalum capacitor, 10 µF, 35 V Digi-Key 366-1655-2-ND
C5, C12, C16 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C6, C8, C10, Ceramic capacitor, 4.5 pF ATC 100B 4R5
C14, C19
C7 Ceramic capacitor, 0.7 pF ATC 100B 0R7
C9 Ceramic capacitor, 1.0 pF ATC 100B 1R0
C11, C15 Capacitor, 1.0 µF Toshiba C4532XTRZA105M
C13, C17 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPS106K050R0400
C18 Ceramic capacitor, 0.5 pF ATC 100B 0R5
L1, L2 Ferrite, 8.9 mm Elna Magnetics BDS 4.6/3/8.9-4S2
Q1 Transistor Infineon Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip resistor, 1.2 k-ohms Digi-Key P1.2KGCT-ND
R2 Chip resistor, 1.3 k-ohms Digi-Key P1.3KGCT-ND
R3 Chip resistor, 2 k-ohms Digi-Key P2KECT-ND
R4 Potentiometer, 2 k-ohms Digi-Key 3224W-202ETR-ND
R5, R7 Chip resistor, 5.1 k-ohms Digi-Key P5.1KECT-ND
R6 Chip resistor, 10 ohms Digi-Key P10ECT-ND
*Gerber Files for this circuit available on request
A261301ef_assy-05-09-30
A261301in_01 A261301out_01
C1
C5
C3 QQ1
C2
R5 R3
R2
R1
C11
C10
LM
C8 C9
C15
C19
C18
C16
C14
R6 R7 C6
C7
C12
L2
L1
C4
Q1
C17
C13 VDD
VDD
VDD
R4
A261301ef_dtl
QQ1
LM
C7
VDD
C1
R1
R2
C3
R3
R6 Q1
C4
C5R5
R7
C2
R4
C6
Data Sheet 10 of 12 Rev. 07, 2007-04-04
PTFA261301E
PTFA261301F
Package Outline Specifications
Package H-30260-2
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
260-cases_30260
0.0381 [.0015] -A-
22.35±0.23
[.880±.009]
(2X 4.83±0.50
[.190±.020])
2X 12.70
[.500]
23.37±0.51
[.920±.020]
4X R 1.52
[.060]
2X 3.25
[.128]
1.02
[.040]
27.94
[1.100]
34.04
[1.340]
D
S
G
FLANGE 13.72
[.540]
45° X (2.03
[.080])
SPH 1.57
[.062]
2X 1.63
[.064] R
4.11±0.38
[.162±.015]
[.520 ]
+.004
–.006
LID 13.21+0.10
–0.15
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron [100 microinch] (min)
D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]
Data Sheet 11 of 12 Rev. 07, 2007-04-04
PTFA261301E
PTFA261301F
Package Outline Specifications
Package H-31260-2
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron [100 microinch] (min)
D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
260-cases_31260
SPH 1.57
[.062]
1.02
[.040]
23.37±0.51
[.920±.020]
2X 12.70
[.500]
45° X 2.031
[.080]
D
G
S
-A-
4.11±0.38
[.162±.015]
LID 22.35±0.23
[.880±.009]
FLANGE 23.11
[.910]
13.72
[.540]
2x 4.83±0.50
[.190±.020]
[.520 +.004 ]
–.006 .
LID 13.21 +0.10
–0.15
0.0381 [.0015]
4X R 0.51
[R.020] MAX
Data Sheet 12 of 12 Rev. 07, 2007-04-04
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2007-04-04
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2004.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any
third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
PTFA261301E/F
Confidential, Limited Internal Distribution
Revision History: 2007-04-04 Data Sheet
Previous Version: 2006-06-15, Data Sheet
Page Subjects (major changes since last revision)
10, 11 Correct package outline information.
