All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 18 Rev. 04, 2010-11-17
PTFB183404E
PTFB183404F
Confidential, Limited Internal Distribution
0
5
10
15
20
25
30
35
-60
-55
-50
-45
-40
-35
-30
-25
36 38 40 42 44 46 48 50 52
Drain Efficiency (%)
IMD & ACPR (dBc)
Average Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 30 V, I
DQ
= 2.6A, ƒ = 1880 MHz, 3GPP
WCDMA, PAR = 8:1, 10 MHz carrier spacing,
BW = 3.84 MHz
Efficiency
IMD Up
IMD
Low
RF Characteristics
Two-carrier WCDMA Measurements (tested in Inneon test xture)
VDD = 30 V, IDQ = 2.6 A, POUT = 80 W average, ƒ1 = 1870 MHz, ƒ2 = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps 16 17 — dB
Drain Efciency hD 24 25.5 — %
Intermodulation Distortion IMD — –35 –32 dBc
High Power RF LDMOS Field Effect Transistors
340 W, 1805 – 1880 MHz
Description
The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs
intended for use in multi-standard cellular power amplier applications
in the 1805 to 1880 MHz frequency band. Features include input and
output matching, high gain and thermally-enhanced package with
slotted and earless anges. Manufactured with Inneon's advanced
LDMOS process, these devices provide excellent thermal performance
and superior reliability.
PTFB183404E
Package H-36275-8
Features
• Broadband internal input and output matching
• Wide video bandwidth
• Typical single-carrier WCDMA performance,
1880 MHz, 30 V
- Output power = 125 W
- Efciency = 31%
- Gain = 17 dB
- PAR = 5.5 dB @ 0.01% CCDF probability
- ACPR @ 5 MHz = –37 dBc
• Increased negative gate-source voltage range for
improved performance in Doherty ampliers
• Capable of handling 10:1 VSWR @ 30 V, 340 W
(CW) output power
• Integrated ESD protection
• Excellent thermal stability
• Pb-free and RoHS compliant
PTFB183404F
Package H-37275-6/2
Data Sheet 2 of 18 Rev. 04, 2010-11-17
PTFB183404E
PTFB183404F
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Single-carrier WCDMA Performance (not subject to production test – veried by design / characterization in Inneon test
xture)
VDD = 30 V, IDQ = 2.6 A, IQ clipping, channel bandwidth = 3.84 MHz, Input signal PAR = 7.5 dB @ 0.01% CCDF probability
Characteristic Conditions Symbol 1805 MHz 1842 MHz 1880 MHz
(Typ) (Typ) (Typ)
Gain POUT (AVG) = 49 dBm Gps 17.1 17.3 17.5
POUT (AVG) = 51 dBm 17.0 17.15 17.4
Drain Efciency POUT (AVG) = 49 dBm hD 25 24.5 24
POUT (AVG) = 51 dBm 31 30 30
Output PAR at 0.01% POUT (AVG) = 49 dBm dB 6.5 6.5 6.5
POUT (AVG) = 51 dBm 5.5 5.5 5.5
Adjacent Channel Power Ratio POUT (AVG) = 49 dBm ACPR –43 –42.5 –41
POUT (AVG) = 51 dBm –36 –35 –34
Two-tone Specications (not subject to production test – veried by design / characterization in Inneon test xture)
VDD = 30 V, IDQ = 2.6 A, POUT = 310 W PEP, ƒ = 1880 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps — 17.5 — dB
Drain Efciency hD — 35 — %
Intermodulation Distortion IMD — 30 — dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W
Operating Gate Voltage VDS = 30 V, IDQ = 2.6 A VGS 2.3 2.8 3.3 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
PTFB183404E
PTFB183404F
Confidential, Limited Internal Distribution
Data Sheet 3 of 18 Rev. 04, 2010-11-17
-55
-50
-45
-40
-35
-30
-25
36 38 40 42 44 46 48 50 52
IMD (dBc)
Average Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 30 V, I
DQ
= 2.6 A, 3GPP WCDMA,
PAR = 8:1, 10 MHz carrier spacing,
BW = 3.84 MHz
1880 Lower
1880 Upper
1842.5 Lower
1842.5 Upper
1805 Lower
1805 Upper
0
10
20
30
40
15
16
17
18
19
36 38 40 42 44 46 48 50 52
Drain Efficiency (%)
Gain (dB)
Average Output Power (dBm)
Two-carrier WCDMA 3GPP
V
DD
= 30 V, I
DQ
= 2.6 A, ƒ = 1880 MHz, 3GPP
WCDMA, PAR = 8:1, 10 MHz carrier spacing,
BW = 3.84MHz
Efficiency
Gain
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –6 to +10 V
Junction Temperature TJ 200 °C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 340 W CW) RqJC 0.2 °C/W
Ordering Information
Type and Version Package Outline Package Description Shipping
PTFB183404E V1 H-36275-8 Ceramic open-cavity, slotted push-pull Tray
PTFB183404E V1 R250 H-36275-8 Ceramic open-cavity, slotted push-pull Tape & Reel, 250 pcs
PTFB183404F V2 H-37275-6/2 Ceramic open-cavity, earless push-pull Tray
PTFB183404F V2 R250 H-37275-6/2 Ceramic open-cavity, earless push-pull Tape & Reel, 250 pcs
Typical Performance (data taken in a production test xture)
Data Sheet 4 of 18 Rev. 04, 2010-11-17
PTFB183404E
PTFB183404F
Confidential, Limited Internal Distribution
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
1730 1767.5 1805 1842.5 1880 1917.5 1955
Frequency (MHz)
Two-tone Broadband
Gain, Efficiency & Return Loss
vs. Frequency
V
DD
= 30 V, I
DQ
= 2.6 A, P
OUT
= 170 W
Gain
Efficiency
RL
IMD3
Return Loss (dB), IMD (dBc)
Gain (dB) / Efficiency (%)
0
5
10
15
20
25
30
35
40
-65
-60
-55
-50
-45
-40
-35
-30
-25
39 41 43 45 47 49 51 53 55
Efficiency (%)
IMD (dBc)
Output Power, PEP (dBm)
Two-tone Drive-up
V
DD
= 30 V, I
DQ
= 2.6 A,
ƒ
1
= 1880 MHz, ƒ
2
= 1879 MHz
Efficiency
IMD3
0
10
20
30
40
50
14
15
16
17
18
19
40 42 44 46 48 50 52 54 56
Efficiency (%)
Gain (dB)
Output Power, PEP (dBm)
Two-tone Drive-up
V
DD
= 30 V, I
DQ
= 2.6 A,
ƒ
1
= 1880 MHz, ƒ
2
= 1879 MHz
Efficiency
Gain
0
10
20
30
40
50
14
15
16
17
18
19
39 41 43 45 47 49 51 53 55 57
Efficiency (%)
Gain (dB)
Output Power, PEP (dBm)
Two-tone Drive-up (over temp)
(P
OUT
-max 3rd order IMD @ -30dBc)
V
DD
= 30 V, I
DQ
= 2.6 A,
ƒ
1
= 1842.5 MHz, ƒ
2
= 1841.5 MHz
+85°C
+25°C
-30°C
Efficiency
Gain
Typical Performance (cont.)
PTFB183404E
PTFB183404F
Confidential, Limited Internal Distribution
Data Sheet 5 of 18 Rev. 04, 2010-11-17
-60
-50
-40
-30
-20
39 41 43 45 47 49 51 53 55 57
IMD 3rd Order (dBc)
Output Power, PEP (dBm)
Two-tone Drive-up at
Selected Frequencies
V
DD
= 30 V, I
DQ
= 2.6 A, tone spacing = 1 MHz
1880MHz
1842.5MHz
1805MHz
-70
-60
-50
-40
-30
-20
39 41 43 45 47 49 51 53 55 57
IMD (dBc)
Output Power, PEP (dBm)
Intermodulation Distortion
vs. Output Power
V
DD
= 30 V, I
DQ
= 2.6 A,
ƒ
1
= 1880 MHz, ƒ
2
= 1879 MHz
3rd Order
7th
5th
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
110100
IMD (dBc)
Two Tone Spacing (MHz)
Intermodulation Distortion
vs. Tone Spacing
ƒ = 1842.5 MHz, P
OUT
= 330 W (PEP),
V
DD
= 30 V, I
DQ
= 2.6 A
IMD7
IMD5
IMD3
IMD Lower
IMD Upper
0
5
10
15
20
25
30
35
-60
-55
-50
-45
-40
-35
-30
-25
363840 42 44 46 48 50 52 54
Drain Efficiency (%)
ACP (dBc)
Average Output Power (dBm)
Single-carrier Drive-up, 1880 MHz
V
DD
= 30 V, I
DQ
= 2.6 A, ƒ = 1880 MHz,
3GPP WCDMA signal, PAR = 7.5:1,
BW = 3.84 MHz
ACP Up
Efficiency
ACP Low
Typical Performance (cont.)
Data Sheet 6 of 18 Rev. 04, 2010-11-17
PTFB183404E
PTFB183404F
Confidential, Limited Internal Distribution
-60
-40
-20
0
20
40
0
4
8
12
16
20
36 38 40 42 44 46 48 50 52 54
Efficiency (%) / ACP (dBc)
Average Output Power (dBm)
Single-carrier Drive-up, 1880 MHz
V
DD
= 30 V, I
DQ
= 2.6 A, ƒ = 1880 MHz,
3GPP WCDMA signal, PAR = 7.5:1,
BW = 3.84 MHz
ACP
PARC @ .01% CCDF
Efficiency
Gain
PARC & PARC Gain (dB)
-40
-35
-30
-25
-20
-15
-10
-5
0
-5
0
5
10
15
20
25
30
35
1693 1768 1843 1918 1993
Frequency (MHz)
Single-carrier Broadband Performance
V
DD
= 30 V, I
DQ
= 2.6 A, P
OUT
= 125 W
Gain
Efficiency
RL
ACP
Gain & PARC (dB) / Efficiency (%)
Return Loss (dB) / ACP (dBc)
-60
-40
-20
0
20
40
0
4
8
12
16
20
36 38 40 42 44 46 48 50 52 54
Efficiency (%) / ACP(dBc)
Average Output Power (dBm)
Single-carrier Drive-up, 1842 MHz
V
DD
= 30 V, I
DQ
= 2.6 A, ƒ = 1842 MHz,
3GPP WCDMA signal, PAR = 7.5:1,
BW = 3.84 MHz
ACP
PARC @ .01% CCDF
Efficiency
Gain
PARC & PARC Gain (dB)
-60
-40
-20
0
20
40
0
4
8
12
16
20
36 38 40 42 44 46 48 50 52 54
Efficiency (%) / ACP(dBc)
Average Output Power (dBm)
Single-carrier Drive-up, 1805 MHz
V
DD
= 30 V, I
DQ
= 2.6 A, ƒ = 1805 MHz,
3GPP WCDMA signal, PAR = 7.5:1,
BW = 3.84 MHz
ACP
PARC @ .01% CCDF
Efficiency
Gain
PARC & PARC Gain (dB)
Typical Performance (cont.)
PTFB183404E
PTFB183404F
Confidential, Limited Internal Distribution
Data Sheet 7 of 18 Rev. 04, 2010-11-17
0.1
0.3
0.5
0.2
0.4
2
0.1
0.3
0
.5
0.
7
0.2
0.4
0.6
0.1
0.3
0.5
0
.7
0
.9
0
.2
0.4
0
.6
0.
8
1
-
W
AV
E
LE
N
GT
H
ST
O
W
AR
D
G
E
NE
R
AT
O
R
--->
0
.05
0
.35
0
.40
0
.45
0
.0
5
0
.1
0
0
.1
5
0
.4
5
<-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
Nornalized to 50 Ohms
ptfb183404f-v1
db183404f-v1 Aug. 27, 2010 12:45:00 PM
Freq Z Source
R jX R
1730.0 1.86 -4.
2
1767.5 1.77 -4.
0
1805.0 1.68 -3.
8
1842.5 1.61 -3.
7
1880.0 1.56 -3.
5
1917.5 1.51 -3.
3
1955.0 1.47 -3.
2
Z Source
1955 MHz
1730 MHz
1730 MHz
Z Load
1955 MHz
Z0 = 50 W
Z Source Z Load
G
D
G
S
D
Broadband Circuit Impedance (combined leads)
Frequency Z Source W Z Load W
MHz R jX R jX
1730 1.86 –4.25 0.55 –2.78
1768 1.77 –4.06 0.54 –2.66
1805 1.68 –3.88 0.53 –7.54
1843 1.61 –3.70 0.52 –2.43
1880 1.56 –3.53 0.51 –2.32
1918 1.51 –3.37 0.51 –2.21
1955 1.47 –3.22 0.5 –2.11
See next page for reference circuit information
Data Sheet 8 of 18 Rev. 04, 2010-11-17
PTFB183404E
PTFB183404F
Confidential, Limited Internal Distribution
C802
1000 pF
C803
1000 pF
C101
4700000 pF
C102
100000 pF
TL104 TL105
TL106
TL107
TL108
TL109
TL110
TL111
TL112
TL113
TL114
TL115
TL116
TL117
TL118
TL119
TL120
C801
1000 pF
TL123
TL124
TL125
TL126
TL127
TL128
TL129
TL130
TL131
TL132
TL133
TL134
TL135
TL136
TL137
TL138
TL139
TL140
TL141
TL101
TL102
TL103
1
2
3
TL143
1
2
3
TL144
1 2
3
TL145
TL146 TL147
TL148
TL149
TL150
TL151
TL152
TL153 TL154
TL155 TL156 TL157
TL158
TL159
TL121
TL122
R101
10 Ohm
C104
10 pF
C105
100000 pF
TL160
R801
10 Ohm
R802
1200 Ohm
R803
1300 Ohm
R804
10 Ohm
1
2
3
TL161
12
3
TL162
1
2
3
TL163
1
2
3
TL164
1 2
3
TL165
12
3
TL166
1 2
3
TL167
1
2
3
TL168
1
2
3
TL142
S
C
B
E
1
2
3
4S2
3
S1
C103
0.7 pF 12
3
TL169
TL170
1 2
3
TL171 TL172
C106
1.7 pF C107
1.7 pF
C108
10 pF
C109
10 pF
R805
10 Ohm
C110
4700000 pF
R102
10 Ohm
C111
10 pF
R103
10 Ohm
R104
10 Ohm
C112
10 pF
GATE DUT
RF IN
In Out
NC NC
1
2 3
45
6 7
8
S3
GATE DUT
bbbbbbbbbbbbbbbbbbbbbbbb
V
DD
Reference Circuit
Reference circuit input schematic for ƒ = 1880 MHz
e
r
=3.48
H=20 mil
RO/RO4350B1
PTFB183404E
PTFB183404F
Confidential, Limited Internal Distribution
Data Sheet 9 of 18 Rev. 04, 2010-11-17
Reference Circuit (cont.)
Reference circuit output schematic for ƒ = 1880 MHz
TL211 TL212
TL213
TL214
TL215
TL216
1
2
3
4
TL217
1
2
3
4
TL218
1
2
3
TL223
1
2
3
TL224
TL225
TL226
TL227
TL228
TL229
TL230
TL231
TL232
TL233
V
DD
C204
10000000 pF
C203
10000000 pF
TL206
TL207
TL208
TL209
TL210
TL236
C207
1000000 pF
1 2
3
TL237
C208
0.4 pF
C209
1.8 pF
C210
1.3 pF
C211
1.3 pF
C212
1.3 pF
C213
1.3 pF
TL238
TL239
TL240
1
2
3
4
TL219
12
3
TL220
1 2
3
TL221
1
2
3
TL222
C215
1000000 pF
C214
1000000 pF
C216
10 pF
TL201
TL202
C201
1.4 pF
C202
10000000 pF
TL203
1
2
3
TL204
TL205
1
2
3
TL234
C205
2200000 pF
C206
2200000 pF
1
2
3
TL235
bbbbbbbbbbbbbbbbbbbbbbbbb
RF OUT
V
DD
DRAIN DUT
V
DD
V
DD
e
r
=3.48
H=20 mil
RO/RO4350B1
Data Sheet 10 of 18 Rev. 04, 2010-11-17
PTFB183404E
PTFB183404F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Description
DUT PTFB183404E or PTFB183404F
PCB 0.508 mm [.020"] thick, er = 3.48, Rogers 4350, 1 oz. copper
Electrical Characteristics at 1880 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Input
TL101, TL129 0.017 λ, 54.17 W W = 1.016, L = 1.651 W = 40, L = 65
TL102 0.002 λ, 63.89 W W = 0.762, L = 0.203 W = 30, L = 8
TL103, TL139 0.000 λ, 41.75 W W = 1.524, L = 0.025 W = 60, L = 1
TL104 0.208 λ, 63.89 W W = 0.762, L = 20.297 W = 30, L = 799
TL105 0.008 λ, 28.85 W W = 2.540, L = 0.762 W = 100, L = 30
TL106 0.005 λ, 63.89 W W = 0.762, L = 0.508 W = 30, L = 20
TL107, TL157 0.061 λ, 8.03 W W = 11.430, L = 5.359 W = 450, L = 211
TL108, TL172 0.004 λ, 8.03 W W = 11.430, L = 0.338 W = 450, L = 13
TL109, TL170 0.002 λ, 8.03 W W = 11.430, L = 0.196 W = 450, L = 8
TL110 0.022 λ, 32.60 W W = 2.159, L = 2.032 W = 85, L = 80
TL111 0.028 λ, 49.69 W W = 1.168, L = 2.710 W = 46, L = 107
TL112 0.000 λ, 63.89 W W = 0.762, L = 0.025 W = 30, L = 1
TL113 0.016 λ, 49.69 W W = 1.168, L = 1.549 W = 46, L = 61
TL114 0.029 λ, 49.69 W W = 1.168, L = 2.743 W = 46, L = 108
TL115, TL116, TL117, TL118 W = 2.540 W = 100
TL119, TL120 W = 1.016 W = 40
TL121, TL141 0.013 λ, 34.08 W W = 2.032, L = 1.270 W = 80, L = 50
TL122, TL123 0.000 λ, 63.89 W W = 0.762, L = 0.000 W = 30, L = 0
TL124, TL156 0.014 λ, 17.20 W W = 4.826, L = 1.270 W = 190, L = 50
TL125 0.013 λ, 63.89 W W = 0.762, L = 1.270 W = 30, L = 50
TL126, TL139, TL159 0.000 λ, 41.75 W W = 1.524, L = 0.025 W = 60, L = 1
TL127 0.002 λ, 63.89 W W = 0.762, L = 0.203 W = 30, L = 8
TL128, TL130 0.013 λ, 54.17 W W = 1.016, L = 1.262 W = 40, L = 50
TL131, TL138 0.014 λ, 54.17 W W = 1.016, L = 1.397 W = 40, L = 55
TL132, TL137 0.000 λ, 34.08 W W = 2.032, L = 0.025 W = 80, L = 1
TL133, TL136 0.079 λ, 54.17 W W = 1.016, L = 7.620 W = 40, L = 300
TL134, TL135 0.008 λ, 54.17 W W = 1.016, L = 0.762 W = 40, L = 30
TL140 0.015 λ, 63.89 W W = 0.762, L = 1.422 W = 30, L = 56
TL142, TL144 0.010 λ, 63.89 W W1 = 0.762, W2 = 0.762, W3 = 1.016 W1 = 30, W2 = 30, W3 = 40
TL143, TL168 0.016 λ, 63.89 W W1 = 0.762, W2 = 0.762, W3 = 1.524 W1 = 30, W2 = 30, W3 = 60
TL145 0.008 λ, 49.69 W W1 = 1.168, W2 = 1.168, W3 = 0.762 W1 = 46, W2 = 46, W3 = 30
TL146 W1 = 0.003, W2 = 0.005, Offset = 0.000 W1 = 3, W2 = 190, Offset = 10
TL147 W1 = 0.005, W2 = 0.011, Offset = 0.003 W1 = 5, W2 = 450, Offset = 130
table continued on page 11
PTFB183404E
PTFB183404F
Confidential, Limited Internal Distribution
Data Sheet 11 of 18 Rev. 04, 2010-11-17
Reference Circuit (cont.)
Electrical Characteristics at 1880 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Input
TL148 W1 = 0.005, W2 = 0.011, Offset = –0.003 W1 = 5, W2 = 450, Offset = –130
TL149 W1 = 0.003, W2 = 0.005, Offset = 0.000 W1 = 3, W2 = 190, Offset = –10
TL150 W1 = 2.032, W2 = 0.762 W1 = 80, W2 = 30
TL151 W1 = 2.540, W2 = 0.762 W1 = 100, W2 = 30
TL152 W1 = 1.168, W2 = 2.159 W1 = 46, W2 = 85
TL153 0.008 λ, 28.85 W W = 2.540, L = 0.762 W = 100, L = 30
TL154, TL155 0.006 λ, 17.20 W W = 4.826, L = 0.508 W = 190, L = 20
TL158 0.015 λ, 63.89 W W = 0.762, L = 1.422 W = 30, L = 56
TL160 0.004 λ, 63.89 W W = 0.762, L = 0.404 W = 30, L = 16
TL161 0.023 λ, 28.85 W W1 = 2.540, W2 = 2.540, W3 = 2.159 W1 = 100, W2 = 100, W3 = 85
TL162, TL165 0.011 λ, 8.03 W W1 = 11.430, W2 = 11.430, W3 = 1.016 W1 = 450, W2 = 450, W3 = 40
TL163, TL164 0.016 λ, 63.89 W W1 = 0.762, W2 = 0.762, W3 = 1.524 W1 = 30, W2 = 30, W3 = 60
TL166, TL167 0.021 λ, 54.17 W W1 = 1.016, W2 = 1.016, W3 = 2.032 W1 = 40, W2 = 40, W3 = 80
TL169, TL171 0.009 λ, 8.03 W W1 = 11.430, W2 = 11.430, W3 = 0.762 W1 = 450, W2 = 450, W3 = 30
See next page for more reference circuit information
Data Sheet 12 of 18 Rev. 04, 2010-11-17
PTFB183404E
PTFB183404F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Electrical Characteristics at 1880 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Output
TL201 (taper) 0.011 λ, 12.30 W / 34.72 W W1 = 7.112, W2 = 1.981, L = 1.016 W1 = 280, W2 = 78, L = 40
TL202 (taper) 0.009 λ, 5.88 W / 7.95 W W1 = 16.002, W2 = 11.557, L = 0.762 W1 = 630, W2 = 455, L = 30
TL203 0.019 λ, 20.93 W W = 3.810, L = 1.778 W = 150, L = 70
TL204 0.019 λ, 20.93 W W1 = 3.810, W2 = 3.810, W3 = 1.778 W1 = 150, W2 = 150, W3 = 70
TL205, TL230 0.003 λ, 20.93 W W = 3.810, L = 0.254 W = 150, L = 10
TL206 (taper) 0.023 λ, 3.67 W / 5.88 W W1 = 26.365, W2 = 16.002, L = 2.032 W1 = 1038, W2 = 630, L = 80
TL207 W1 = 25.400, W2 = 26.365 W1 = 1000, W2 = 1038
TL208, TL209 0.000 λ, 144.35 W W = 0.025, L = 0.025 W = 1, L = 1
TL210 0.055 λ, 3.67 W W = 26.365, L = 4.801 W = 1038, L = 189
TL211 0.044 λ, 34.72 W W = 1.981, L = 4.115 W = 78, L = 162
TL212 0.005 λ, 47.12 W W = 1.270, L = 0.432 W = 50, L = 17
TL213, TL214, TL239, TL240 0.000 λ, 144.35 W W = 0.025, L = 0.025 W = 1, L = 1
TL215 0.066 λ, 47.12 W W = 1.270, L = 6.299 W = 50, L = 248
TL216 0.014 λ, 28.85 W W = 2.540, L = 1.270 W = 100, L = 50
TL217 W1 = 16.002, W2 = 0.025, W3 = 16.002 W1 = 630, W2 = 1, W3 = 630,
W4 = 0.025 W4 = 1
TL218 W1 = 11.557, W2 = 0.025, W3 = 11.557 W1 = 455, W2 = 1, W3 = 455,
W4 = 0.025 W4 = 1
TL219 W1 = 7.112, W2 = 0.025, W3 = 7.112 W1 = 280, W2 = 1, W3 = 280
W4 = 0.025 W4 = 1
TL220, TL221, TL223, TL224 0.042 λ, 20.93 W W1 = 3.810, W2 = 3.810, W3 = 3.810 W1 = 150, W2 = 150, W3 = 150
TL222 0.019 λ, 20.93 W W1 = 3.810, W2 = 3.810, W3 = 1.778 W1 = 150, W2 = 150, W3 = 70
TL225, TL227 0.023 λ, 20.93 W W = 3.810, L = 2.078 W = 150, L = 82
TL226, TL228 0.066 λ, 20.93 W W = 3.810, L = 6.020 W = 150, L = 237
TL229, TL232 0.028 λ, 20.93 W W = 3.810, L = 2.540 W = 150, L = 100
TL231, TL233 0.097 λ, 20.93 W W = 3.810, L = 8.915 W = 150, L = 351
TL234, TL235 0.019 λ, 20.93 W W1 = 3.810, W2 = 3.810, W3 = 1.778 W1 = 150, W2 = 150, W3 = 70,
TL236 0.019 λ, 20.93 W W = 3.810, L = 1.778 W = 150, L = 70
TL237 0.021 λ, 47.12 W W1 = 1.270, W2 = 1.270, W3 = 2.032 W1 = 50, W2 = 50, W3 = 80
TL238 (taper) 0.009 λ, 7.95 W / 12.30 W W1 = 11.557, W2 = 7.112, L = 0.787 W1 = 455, W2 = 280, L = 31
PTFB183404E
PTFB183404F
Confidential, Limited Internal Distribution
Data Sheet 13 of 18 Rev. 04, 2010-11-17
RO4350, .020 (60/RNK47)
b 1 8 3 4 0 4 f _ C D _ 0 7 - 2 8 - 2 0 1 0
PTFB183404_OUT_02
+
10 µF
C201
C206
C204
C205
C202
C212
C213
C214
C207
C208
C209
C210
C211
C203
C216
C215
RO4350, .020 (60/RNK47)
PTFB183404_IN_02
+
C101
C102
C112
C111
C103
C104
C105
C106
C109
C110
R804
R104
R103
R803
S3
S1
S2
R802
R801
R805
R102
R101
C107
C108
C801
C802
C803
RF_IN RF_OUT
VDD
VDD
VDD
+
10 µF
Reference Circuit (cont.)
Circuit Assembly Information
Test Fixture Part No. LTN/PTFB183404EF
Find Gerber les for this test xture on the Inneon Web site at http://www.inneon.com/rfpower
Reference circuit assembly diagram (not to scale)
Data Sheet 14 of 18 Rev. 04, 2010-11-17
PTFB183404E
PTFB183404F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Component Description Suggested Manufacturer P/N
Input
C101, C110 Chip capacitor, 4.7 μF Digi-Key PCS3475CT-ND
C102, C105 Chip capacitor, 0.1 μF Digi-Key PCC104BCT-ND
C103 Chip capacitor, 0.7 pF ATC ATC100B0R7BW500XB
C104, C108, C109 Chip capacitor, 10 pF ATC ATC100B100JW500XB
C106, C107 Chip capacitor, 1.7 pF ATC ATC100A1R7BW150XB
C111, C112 Chip capacitor, 10 pF ATC ATC100A100JW500XB
C801, C802, C803 Chip capacitor, 1000 pF Digi-Key PCC1772CT-ND
R101, R102, R801, R804, Resistor, 10 W Digi-Key P10ECT-ND
R805
R103, R104 Resistor, 10 W Digi-Key P10GCT-ND
R802 Resistor, 1200 W Digi-Key P1.2KGCT-ND
R803 Resistor, 1300 W Digi-Key P1.3KGCT-ND
S1 Potentiometer, 2k W Digi-Key 3224W-202ECT-ND
S2 Transistor Digi-Key BCP5616TA-ND
S3 Voltage Regulator Digi-Key LM7805
Output
C201 Chip capacitor, 1.4 pF ATC ATC100B1R4BW500XB
C202, C207 Chip capacitor, 10 μF Digi-Key 587-1818-2-ND
C203, C204 Tantalum capacitor, 10 μF Digi-Key TPSE106K050R0400
C205, C206 Chip capacitor, 2.2 μF Digi-Key 445-1447-2-ND
C208 Chip capacitor, 0.4 pF ATC ATC100B0R4BW500XB
C209 Chip capacitor, 1.8 pF ATC ATC100B1R8BW500XB
C210, C211, C212, C213 Chip capacitor, 1.3 pF ATC ATC100B1R3BW500XB
C214, C215 Chip capacitor, 1 μF Digi-Key 445-1411-2-ND
C216 Chip capacitor, 10 pF ATC ATC100B100JW500XB
PTFB183404E
PTFB183404F
Confidential, Limited Internal Distribution
Data Sheet 15 of 18 Rev. 04, 2010-11-17
TOP VIEW
D1 D2
G2G1
S
V1 V2
E F
bbbbbbbbbbbbbbbbbbbbbbb
TOP VIEW
D1 D2
G2G1
V1 V2
b bbbbbbbbbbbbbbbbbbbbbbbb
S = flange
G1
G2
D2
D1
Pin Description
V1 VDD Device 1
V2 VDD Device 2
G1 Gate Device 1
G2 Gate Device 2
D1 Drain Device 1
D2 Drain Device 2
E N.C.
F N.C.
S Source (ange)
Pinout Diagram
Data Sheet 16 of 18 Rev. 04, 2010-11-17
PTFB183404E
PTFB183404F
Confidential, Limited Internal Distribution
Package Outline Specications
Package H-36275-8
Diagram Notes—unless otherwise specied:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specied otherwise.
4. Pins: G1, G2 = gate; D1, D2 = drain; V1, V2 = VDD; E, F = N.C.; S = source
5. Lead thickness: 0.127 +0.051/–0.025 [.005 +.002/–.001].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
35.560
[1.400]
4X 11.684
[.460]
2X 45° X 1.19
[45° X .047]
9.398
[.370]
C
L
C
LL
C
4X 30°
2X R1.587
[R.062]
4X 1.143
[.045]
2x 2.032
[.080]
REF
4X 3.175
[.125]
13.716
[.540]
9.144
[.360] 16.612±.500
[.654±.020]
10.160
[.400]
2X 31.750
[1.250]
1.626
[.064]
2.134
[.084] SPH
3.226±0.508
[.127±.020]
4.585
+0.254
–.127
[.180 ]
+. 010
–.005
31.242±0.280
[1.230±.011]
R0.508
+0.127
–0.508
[R.020 ]
+. 005
–.0 20
S
L
C
C
L
G2E
D1 D2
F
41.148
[1.620]
H - 36275 - 8_po _ 2-18 -2010
V1 V2
G1
PTFB183404E
PTFB183404F
Confidential, Limited Internal Distribution
Data Sheet 17 of 18 Rev. 04, 2010-11-17
Package Outline Specications (cont.)
Package H-37275-6/2
Diagram Notes—unless otherwise specied:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specied otherwise.
4. Pins: G1, G2 = gate; D1, D2 = drain; V1, V2 = VDD; S = source.
5. Lead thickness: 0.127 ±.051 [.005 ±.002].
6. Gold plating thickness: 1.1 ±.38 micron [45 ± 15 microinch].
Find the latest and most complete information about products and packaging at the Inneon Internet page
http://www.inneon.com/rfpower
V1
G1 G2
D2D1 V2
32.258
[1.270]
1.626
[0.064]
10.160
[.400]
4X 11.684
[.460]
2X 45° X 1.19
[45° X .047]
2X 1.143
[.045]
16.612±.500
[.654±.020]
9.398
[.370]
C
L
13.716
[.540]
9.144
[.360]
2X 3.175
[.125]
2X 30°
31.750
[1.250]
2X 2.032
[.080]
REF
2.134
[.084] SPH
3.226±0.508
[.127±.020]
31.242±0.280
[1.230±.011] 4.585+0.250
-0.127
[.180 +.010
-.005 ]
S
4X R0.508 +.381
-.127
[R.020+.015
-.005 ]C
LC
L
C
L
C
L
h-37275-6-2_po _07-21- 2010
Data Sheet 18 of 18 Rev. 04, 2010-11-17
Edition 2010-11-17
Published by
Inneon Technologies AG
81726 Munich, Germany
© 2009 Inneon Technologies AG
All Rights Reserved.
Legal Disclaimer
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With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Inneon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Inneon Technologies Ofce (www.inneon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Inneon Technologies Ofce.
Inneon Technologies components may be used in life-support devices or systems only with the express written approval of
Inneon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
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PTFB183404E V1/ PTFB183404F V2
Condential, Limited Internal Distribution
Revision History: 2010-11-17 Data Sheet
Previous Version: 2010-07-23, Data Sheet
Page Subjects (major changes since last revision)
All Merge the data sheet to include E and F versions.