BYG23M www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES * Low profile package * Ideal for automated placement * Glass passivated junction * Low reverse current * High reverse voltage * Ultra fast reverse recovery time * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C DO-214AC (SMA) * AEC-Q101 qualified * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 1.5 A VRRM 1000 V IFSM 30 A IR 5.0 A trr 75 ns ER 20 mJ TJ max. 150 C For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL BYG23M UNIT BYG23M Device marking code Maximum repetitive peak reverse voltage VRRM 1000 V Average forward current at TA = 65 C IF(AV) 1.5 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 A Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 C ER 20 mJ Operating junction and storage temperature range TJ, TSTG - 55 to + 150 C Revision: 21-Dec-11 Document Number: 88962 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG23M www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Minimum breakdown voltage IR = 100 A Maximum instantaneous voltage IF = 1.0 A Maximum reverse current VR = VRRM Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A SYMBOL BYG23M UNIT VBR 1000 V 1.7 V V TJ = 25 C VF (1) TJ = 150 C TJ = 25 C 1.35 5 IR TJ = 125 C A 50 trr 75 ns BYG23M UNIT C/W Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL RJC 25 RJA (1) 150 RJA (2) 125 (3) 100 Typical thermal resistance, junction to case Typical thermal resistance, junction to ambient RJA C/W Notes (1) Mounted on epoxy-glass hard tissue, 17 mm2 35 m Cu (2) Mounted on epoxy-glass hard tissue, 50 mm2 35 m Cu (3) Mounted on Al-oxide-ceramic (Al O ), 50 mm2 35 m Cu 2 3 ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED P/N PREFERRED PACKAGE CODE BASE QANTITY DELIVERY MODE BYG23M-E3/TR 0.064 TR 1800 7" diameter plastic tape and reel BYG23M-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel 0.064 TR 1800 7" diameter plastic tape and reel 0.064 TR3 7500 13" diameter plastic tape and reel BYG23MHE3/TR (1) BYG23MHE3/TR3 (1) Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 1.6 Average Forward Current (A) Forward Current (A) 100 10 TJ = 150 C TJ = 25 C 1 VR = VRRM Half Sine-Wave 1.4 1.2 RJA = 25 K/W 1.0 0.8 0.6 RJA = 125 K/W 0.4 RJA = 150 K/W 0.2 0.1 0.5 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 25 50 75 100 125 150 Forward Voltage (V) Ambient Temperature (C) Fig. 1 - Max. Forward Current vs. Forward Voltage Fig. 2 - Max. Average Forward Current vs. Ambient Temperature Revision: 21-Dec-11 Document Number: 88962 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG23M www.vishay.com Vishay General Semiconductor 26 160 24 RJA = 125 K/W 140 RJA = 175 K/W 120 f = 1 MHz TJ = 25 C 22 Diode Capacitance (pF) Reverse Power Dissipation (mW) VR = VRRM 100 100 % 80 60 40 80 % 20 18 16 14 12 10 8 6 4 20 2 0 0 25 50 75 100 125 0.1 150 1 10 100 Junction Temperature (C) Reverse Voltage (V) Fig. 3 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 5 - Diode Capacitance vs. Reverse Voltage 1000 Reverse Current (A) VR = VRRM 100 10 1 25 50 75 100 125 150 Junction Temperature (C) Fig. 4 - Reverse Current vs. Junction Temperature PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 21-Dec-11 Document Number: 88962 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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