TLP321,TLP321-2,TLP321-4
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP321, TLP321-2, TLP321-4
Programmable Controllers
DC−Output Module
Telecommunication
The TOSHIBA TLP321, −2 and −4 consist of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode.
The TLP321−2 offers two isolated channels in an eight lead plastic DIP
package, while the TLP321−4 provides four isolated channels in a
sixteen plastic DIP package.
TLP321 / −2 / −4 have high VCEO voltage (VCEO = 80V).
· Collector−emitter voltage: 80V (min.)
· Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
· Isolation voltage: 5000Vrms (min.)
· UL recognized: UL1577, file no. E67349
Pin Configurations (top view)
2
TLP321
1 : ANODE
2 : CATHODE
3 : EMITTER
4 : COLLECTOR
1
3
4
2
TLP321-2
1,3 : ANODE
2,4 : CATHODE
5,7 : EMITTER
6,8 : COLLECTOR
1
7
8
4
3
5
6
2
TLP321-4
1,3,5,7 : ANODE
2,4,6,8 : CATHODE
9,11,13,15 : EMITTER
10,12,14,16 : COLLECTOR
1
15
16
4
3
13
14
11
12
9
10
6
5
8
7
TOSHIBA 11−5B2
Weight: 0.26g
TOSHIBA 11−10C4
Weight: 0.54g
TOSHIBA 11−20A3
Weight: 1.1g
Unit in mm
TLP321,TLP321-2,TLP321-4
2002-09-25
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Current Transfer Ratio
Current Transfer Ratio (%)
(IC / IF)
IF = 5mA, VCE = 5V, Ta = 25°C
Type Classification
*1
Min. Max.
Marking Of Classification
(None) 50 600 BLANK, Y, Y■, G, G■, B, B■, GB
Rank Y 50 150 Y, Y■
Rank GR 100 300 G, G■
Rank BL 200 600 B, B■
TLP321
Rank GB 100 600 G, G■, B, B■, GB
(None) 50 600 BLANK, GR, BL, GB
TLP321-2
TLP321-4 Rank GB 100 600 GR, BL, GB
*1: Ex. Rank GB: TLP321 (GB)
(Note) Application type name for certification test, please use standard product type name, i. e.
TLP321 (GB): TLP321
TLP321-2 (GB): TLP321-2
TLP321,TLP321-2,TLP321-4
2002-09-25
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Maximum Ratings (Ta = 25°C)
Rating
Characteristic Symbol
TLP321-1 TLP321-2
TLP321-4
Unit
Forward current IF 60 50 mA
Forward current derating ∆IF / °C -0.7 (Ta ≥ 39°C) -0.5 (Ta ≥ 25°C) mA / °C
Pulse forward current IFP 1 (100µs pulse, 100pps) A
Reverse voltage VR 5 V
LED
Junction temperature Tj 125 °C
Collector-emitter voltage VCEO 80 V
Emitter-collector voltage VECO 7 V
Collector current IC 50 mA
Collector power dissipation
(1 Circuit) PC 150 100 mW
Collector power dissipation
derating (1 Circuit, Ta ≥ 25°C) ∆PC / °C -1.5 -1.0 mW / °C
Detector
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
Operating temperature range Topr -55~100 °C
Lead soldering temperature Tsol 260 (10s) °C
Total package power dissipation RT 250 150 mW
Total package power dissipation
derating (Ta ≥ 25°C) ∆PT / °C -2.5 -1.5 mW / °C
Isolation voltage (Note 1) BVS 5000 (AC, 1min., RH ≤ 60%) Vrms
(Note 1) Device considered a two terminal device: LED side pins shorted together and detector side pins
shorted together.
TLP321,TLP321-2,TLP321-4
2002-09-25
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Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VCC ― 12 48 V
Forward current IF ― 16 20 mA
Collector current IC ― 1 10 mA
Operating temperature Topr -25 ― 85 °C
Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Condition Min. Typ. Max. Unit
Forward voltage VF I
F =10 mA 1.0 1.15 1.3 V
Reverse current IR V
R =5 V — — 10 µA
LED
Capacitance CT V = 0, f = 1MHz — 30 — pF
Collector-emitter
breakdown voltage V(BR) CEO IC = 0.5mA 80 — — V
Emitter-collector
breakdown voltage V(BR) ECO IE = 0.1mA 7 — — V
VCE = 48V — 10 100 nA
Collector dark current ICEO
VCE = 48V, Ta = 85°C — 2 50 µA
Detector
Capacitance
(collector to emitter) CCE V = 0, f = 1MHz — 10 — pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Condition MIn. Typ. Max. Unit
50 — 600
Current transfer ratio IC / IF IF = 5mA, VCE = 5V
Rank GB 100 — 600
%
— 60 —
Saturated CTR IC / IF (sat) IF = 1mA, VCE = 0.4V
Rank GB 30 — —
%
IC = 2.4mA, IF = 8mA — — 0.4
— 0.2 —
Collector-emitter
saturation voltage VCE (sat) IC = 0.2mA, IF = 1mA
Rank GB — — 0.4
V
TLP321,TLP321-2,TLP321-4
2002-09-25
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Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Capacitance (input to output) CS VS = 0, f = 1MHz — 0.8 — pF
Isolation resistance RS VS = 500V, R.H. ≤ 60% 5×1010 1014 — Ω
AC, 1 minute 5000 — —
AC, 1 second, in oil — 10000 —
Vrms
Isolation voltage BVS
DC, 1 minute, in oil — 10000 — Vdc
Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Rise time tr — 2 —
Fall time tf — 3 —
Turn-on time ton — 3 —
Turn-off time toff
VCC = 10V
IC = 2mA
RL = 100Ω
— 3 —
µs
Turn-on time tON — 2 —
Storage time ts — 15 —
Turn-off time tOFF
RL = 1.9kΩ (Fig.1)
VCC = 5V, IF = 16mA
— 25 —
µs
Fig. 1 Switching time test circuit
VCC
VCE
RL
IF
VCE
tON tOFF
tS
4.5V
0.5V
V
CC
TLP321,TLP321-2,TLP321-4
2002-09-25
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TLP321-2
TLP321-4 IF – Ta
Ambient temperature Ta (°C)
Allowable forward current
I
F (mA)
80
0
-20
100
60
40
20
0 20 40 60 80 100
120
Allowable collector power
dissipation PC (mW)
100
20
-20
120
80
60
40
20 60 80 100 120
40 0
0
Ambient temperature Ta (°C)
TLP321-2
TLP321-4 PC – Ta
TLP321 IFP – DR
Duty cycle ratio DR
Allowable pulse forward
current IFP (mA)
3
10
3000
1000
500
300
100
50
30
10-2 3 3 3 10-3 10-1 100
Pulse width ≤100µs
Ta = 25°C
TLP321-2
TLP321-4 IFP – DR
Duty cycle ratio DR
Allowable pulse forward
current IFP (mA)
3
10
3000
1000
500
300
100
50
30
10-2
3 3 3 10-3 10-1 100
Pulse width ≤100µs
Ta = 25°C
TLP321 PC – Ta
Ambient temperature Ta (°C)
Allowable collector power
dissipation PC (mW)
-20
200
40
240
180
120
80
20 80 100 120
40 0
060
TLP321 IF – Ta
Ambient temperature Ta (°C)
Allowable forward current
I
F (mA)
0
80
0
-20
100
60
40
20
20 40 60 80 100 120
TLP321,TLP321-2,TLP321-4
2002-09-25
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50
∆VF /∆Ta – I F
Forward voltage temperature
coefficient ΔVF /ΔTa (mV / °C)
-0.4
0.1
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
0.3 1 3 10 30 0.5 5
Forward current IF (mA)
ID – Ta
Ambient temperature Ta (°C)
Collector dark current ID (μA)
10
1
0
10
0
10
-1
10
-2
10
-3
10
-4
20
40
60
80
100
10
-5
10V
I
F – VF
Forward voltage VF (V)
Forward current IF (mA)
0.4
100
0.1
50
30
10
5
3
1
0.5
0.3
0.6 0.8 1.0 1.6
1.2 1.4
Ta = 25°C
I
C – VCE
Collector-emitter voltage VCE (V)
Collector current IC (mA)
0
40
50
30
20
10
6 8 10 4 2
0
Ta = 25°C
IF = 5mA
PC MAX.
10mA
15mA
20mA
30mA
50mA
I
C – VCE
Collector-emitter voltage VCE (V)
Collector current IC (mA)
0
40
50
30
20
10
0.8 1
0.4 0.2
00.6
Ta = 25°C
50mA
40mA
30mA
20mA
10mA
5mA
IF = 2mA
I
Fp – VFp
Pulse forward voltage VFP (V)
Pulse forward current IFP (mA)
0
1000
1
500
300
100
50
30
10
5
3
0.4 0.8 1.2
Pulse width ≤10µs
Repetitive frequency
= 100Hz
Ta = 25°C
2.4 1.6 2.0
VCE=48V 24V
5V
TLP321,TLP321-2,TLP321-4
2002-09-25
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I
C – IF
Forward current IF (mA)
Collector current IC (mA)
0.1
100
0.1
50
30
10
5
3
1
0.5
0.3
0.3 1 3 100
10 30
Ta = 25°C
5V
0.4V
VCE = 10V
SAMPLE B
SAMPLE A
Forward current IF (mA)
Current transfer ratio IC / IF (%)
I
C / IF – IF
0.1
1000
500
300
100
50
30
10
0.3 1 3 100
10 30
Ta = 25°C
5V
0.4V
VCE = 10V
SAMPLE B
SAMPLE A
V
CE (sat) – Ta
Ambient temperature Ta (°C)
Collector-emitter saturation
voltage VCE (sat) (V)
-40
0.2
0.1
20 80 100 0 -20
0
IF = 5mA
IC = 1mA
60 40
I
C – Ta
Ambient temperature Ta (°C)
Collector current IC (mA)
0.1
50
30
10
5
3
1
0.5
0.3
-20 0 40 60
VCE = 5V
IF = 25mA
10mA
5mA
1mA
0.5mA
Switching Time – RL
Load resistance RL (kΩ)
Switching time (µs)
10
1
1000
500
300
1
5
3
100
50
3 10 30
Ta = 25°C
IF = 16mA
VCC = 5V
30
100
tOFF
tS
tON
TLP321,TLP321-2,TLP321-4
2002-09-25
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· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EBC
RESTRICTIONS O N PRODUCT USE
