APTGF25X120E2
APTGF25X120P2
APTGF25X120E2(P2) – Rev 0 November, 2003
APT website – http://www.advancedpower.com
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All ratings @ T
j
= 25°C unless otherwise specified
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 1200 V
T
C
= 25°C 35
I
C
Continuous Collector Current T
C
= 80°C 25
I
CM
Pulsed Collector Current T
C
= 25°C 70
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
C
= 25°C 200 W
SCSOA Short circuit Safe Operating Area T
j
= 150°C 250A@1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Pin out: APTGF25X120E2 (Long pins)
V W P+
11 129 107 8
UN-
1 2 3 4 5 6
Pin out: APTGF25X120P2 (Short pins)
P+WVUN-
12109 11821 4 6 753
VCES = 1200V
IC = 25A @ Tc = 80°C
Application
• AC Motor control
Features
• Non Punch Through (NPT) IGBT
®
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
3 Phase bridge
N
PT IG
BT Power Module
APTGF25X120E2
APTGF25X120P2
APTGF25X120E2(P2) – Rev 0 November, 2003
APT website – http://www.advancedpower.com
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4
Electrical Characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage V
GE
= 0V, I
C
= 500µA
1200
V
T
j
= 25°C 0.5 0.8
I
CES
Zero Gate Voltage Collector Current V
GE
= 0V
V
CE
= 1200V T
j
= 125°C 2 mA
T
j
= 25°C 2.5 3.0
V
CE(on)
Collector Emitter on Voltage V
GE
= 15V
I
C
= 25A T
j
= 125°C 3.1 3.7 V
V
GE(th)
Gate Threshold Voltage V
GE
= V
CE
, I
C
= 1mA 4.5 5.5 6.5 V
I
GES
Gate – Emitter Leakage Current V
GE
= 20V, V
CE
= 0V 180 nA
Dynamic Characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
C
ies
Input Capacitance 1650
C
oes
Output Capacitance 250
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz 110
pF
T
d(on)
Turn-on Delay Time 75 150
T
r
Rise Time 65 130
T
d(off)
Turn-off Delay Time 400 600
T
f
Fall Time
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 25A
R
G
= 47Ω 50 100
ns
Reverse diode ratings and characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
T
j
= 25°C 2.3 2.8
V
F
Diode Forward Voltage I
F
= 25A
V
GE
= 0V T
j
= 125°C 1.8 V
t
rr
Reverse Recovery Time I
F
= 25A
V
R
= 600V
di/dt =800A/µs T
j
= 125°C 0.13 µs
T
j
= 25°C 2.3
Q
rr
Reverse Recovery Charge I
F
= 25A
V
R
= 600V
di/dt =800A/µs
T
j
= 125°C 6 µC
Thermal and package characteristics
Symbol
Characteristic Min Typ Max Unit
IGBT 0.6
R
thJC
Junction to Case Diode 1 °C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz 2500 V
T
J
Operating junction temperature range -40 150
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 125
°C
Torque Mounting torque To Heatsink M5 2 3.5 N.m
Wt Package Weight 185 g
APTGF25X120E2
APTGF25X120P2
APTGF25X120E2(P2) – Rev 0 November, 2003
APT website – http://www.advancedpower.com
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4
Package outline
Pin out: APTGF25X120E2 (Long pins)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APTGF25X120E2
APTGF25X120P2
APTGF25X120E2(P2) – Rev 0 November, 2003
APT website – http://www.advancedpower.com
4
-
4
Package outline
Pin out: APTGF25X120P2 (Short pins)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
