Document Number: 81835 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 1.2, 25-Jun-09 1
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
TSFF5510
Vishay Semiconductors
DESCRIPTION
TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Leads with stand-off
• Peak wavelength: λp = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 38°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching with Si photodetectors
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Infrared video data transmission between camcorder and
TV set
• Free air data transmission systems with high data
transmission rates
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
Tamb = 25 °C, unless otherwise specified
21061
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
TSFF5510 32 ± 38 870 15
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSFF5510 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA
Surge forward current tp = 100 µs IFSM 1A
Power dissipation PV180 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 85 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm soldered on PCB RthJA 230 K/W
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81835
2Rev. 1.2, 25-Jun-09
TSFF5510
Vishay Semiconductors High Speed Infrared Emitting Diode,
870 nm, GaAlAs Double Hetero
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
Note
Tamb = 25 °C, unless otherwise specified
0
20
40
60
80
100
120
140
160
180
200
01020304050607080 90 100
21142
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
RthJA = 230 K/W
0
20
40
60
80
100
120
0 1020304050607080 90 100
T
amb
- Ambient Temperature (°C)
21143
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
IF = 100 mA, tp = 20 ms VF1.3 1.45 1.7 V
IF = 450 mA, tp = 100 µs VF1.5 1.75 2.1 V
IF = 1 A, tp = 100 µs VF2.1 V
Temperature coefficient of VFIF = 1 mA TKVF - 1.8 mV/K
Reverse current VR = 5 V IR10 µA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj110 pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie16 32 48 mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe55 mW
Temperature coefficient of φeIF = 100 mA TKφe- 0.35 %/K
Angle of half intensity ϕ± 38 deg
Peak wavelength IF = 100 mA λp870 nm
Spectral bandwidth IF = 100 mA Δλ 55 nm
Temperature coefficient of λpIF = 100 mA TKλp0.25 nm/K
Rise time IF = 100 mA tr15 ns
Fall time IF = 100 mA tf15 ns
Cut-off frequency IDC = 70 mA, IAC = 30 mA pp fc24 MHz
Document Number: 81835 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 1.2, 25-Jun-09 3
TSFF5510
High Speed Infrared Emitting Diode,
870 nm, GaAlAs Double Hetero Vishay Semiconductors
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
Fig. 7 - Relative Radiant Power vs. Wavelength
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
100
1000
0.01 0.1 1 10 100
tP - Pulse Duration (ms)
16031
tP/T = 0.01
0.05
0.2
0.5
0.1
0.02
Tamb < 50 °C
IF - Forward Current (mA)
0.001
0.01
0.1
1
10
0 0.5 1 1.5 2 2.5 3 3.5 4
21009
IF - Forward Current (A)
VF - Forward Voltage (V)
0.1
1
10
100
1000
1 10 100 1000
21010 IF - Forward Current (mA)
Ie - Radiant Intensity (mW/sr)
tP = 100 µs
tP/T = 0.002
0.1
1
10
100
1000
1 10 100 1000
IF - Forward Current (mA)
φe - Radiant Power (mW)
21062
tP = 100 µs
tP/T = 0.002
0
0.25
0.50
0.75
1.00
1.25
750 790 830 870 910 950
λ - Wavelength (nm)
21011
- Relative Radiant Power
e, rel
Φ
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
- 90 - 70 - 50 - 30 - 10 0 10 30 50 70 90
21012
I
e, rel
- Relative Radiant Intensity
Angle (°)
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81835
4Rev. 1.2, 25-Jun-09
TSFF5510
Vishay Semiconductors High Speed Infrared Emitting Diode,
870 nm, GaAlAs Double Hetero
PACKAGE DIMENSIONS in millimeters
CA
Ø 5.9 ± 0.15
31.4 ± 0.55
Ø 4.8 ± 0.15
SR2.35
Area not plane
3.8 ± 0.15
4.4 ± 0.3
9.5 ± 0.3
2.54 nom.
1 min.
1.1 ± 0.25
0.5 + 0.15
- 0.05
(1.72)
specifications
according to DIN
technical drawings
Drawing-No.: 6.544-5390.01-4
Issue: 2; 19.05.09
20796
0.5 + 0.15
- 0.05
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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