January 2007 Rev 3 1/11
11
Order codes
Part Number Marking Package Packaging
STC08IE120HV C08IE120HV TO247-4L HV Tube
STC08IE120HV
Emitter Switched Bipolar Transistor
ESBT
®
1200 V - 8 A - 0.10 Ω
General features
■High voltage / high current Cascode
configuration
■Low equivalent on resistance
■very fast-switch up to 150 kHz
■Squared RBSOA up to 1200V
■Very low Ciss driven by RG = 47Ω
■Very low turn-off cross over time
Applications
■Flyback / forward SMPS
■Sepic PFC
Description
The STC08IE120HV is manufactured in Monolith-
ic ESBT Technology, aimed to provide best perfor-
mances in high frequency / high voltage
applications.
It is designed for use in Gate Driven based topolo-
gies.
Internal schematic diagrams
VCS(ON) ICRCS(ON)
0.8 V 8 A 0.10
W
TO247-4L HV
1
234
www.st.com
STC08IE120HV
2/11
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
STC08IE120HV Electrical ratings
3/11
1 Electrical ratings
Table 2. Thermal data
Table 1. Absolute maximum rating
Symbol Parameter Value Unit
VCS(SS) Collector-source voltage (VBS = VGS = 0 V) 1200 V
VBS(OS) Base-source voltage (IC = 0, VGS = 0 V) 30 V
VSB(OS) Source-base voltage (IC = 0, VGS = 0 V) 17 V
VGS Gate-source voltage ± 17 V
ICCollector current 8 A
ICM Collector peak current (tP < 5ms) 24 A
IBBase current 6 A
IBM Base peak current (tP < 5ms) 12 A
Ptot Total dissipation at Tc = 25°C 208 W
Tstg Storage temperature -40 to 150 °C
TJMax. operating junction temperature 150 °C
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case __max 0.6 °C/W
Electrical characteristics STC08IE120HV
4/11
2 Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 3. Electrical characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICS(SS)
Collector-source current
(VBS = VGS = 0) VCE = 1200V 100 µA
IBS(OS)
Base-source current
(IC = 0, VGS = 0) VBS(OS) = 30V 10 µA
ISB(OS)
Source-base current
(IC = 0, VGS = 0) VSB(OS) = 17V 100 µA
IGS(OS) Gate-source leakage VGS = ± 17V 100 nA
VCS(ON) Collector-source ON
voltage
VGS = 10V _IC = 8A IB = 1.6A
VGS = 10V_ IC = 4A IB = 0.4A
0.8
0.5
1
1.2
V
V
hFE DC current gain VGS = 10V_ IC = 8A VCS = 1V
VGS = 10V_ IC = 4A_ VCS = 1V
5
7
VBS(ON) Base Source ON voltage VGS = 10V_ IC = 8A IB = 1.6A
VGS = 10V_ IC = 4A_ IB = 0.4A
1.5
1.5
V
V
VGS(th) Gate threshold voltage VBS = VGS ______IB = 250µA234V
CISS Input capacitance VCS = 25V ______f = 1MHz
VGS = 0 550 pF
QGS(tot) Gate-source charge VGS = 10V 26 nC
ts
tf
INDUCTIVE LOAD
Storage time
Fall time
IC = 4A IB = 0.8A VGS = 10V
VClamp = 960V RG = 47Ω
tp = 4µs
670
15
ns
ns
ts
tf
INDUCTIVE LOAD
Storage time
Fall time
IC = 4A IB = 0.4A VGS = 10V
VClamp = 960V RG = 47Ω
tp = 4µs
340
10.2
ns
ns
VCSW
Maximum collector-
source voltage switched
without snubber
RG = 47Ω hFE = 5A IC = 8A 1200 V
VCS(dyn)
Collector-source
dynamic voltage
(500ns)
VCC = VClamp = 400V VGS = 10V
RG = 47Ω IC = 4A IB = 0.8A
IBpeak = 4A tpeak = 500ns
5.75 V
VCS(dyn)
Collector-source
dynamic voltage
(1 µs)
VCC = VClamp = 400V VGS = 10V
RG = 47Ω IC = 4A IB = 0.8A
IBpeak = 4A tpeak = 500ns
3.35 V
STC08IE120HV Electrical characteristics
5/11
2.1 Electrical characteristics (curves)
Figure 1. Output characteristics Figure 2. DC current gain
Figure 3. Collector-source On voltage Figure 4. Collector-source On voltage
Figure 5. Base-source On voltage Figure 6. Base-source On voltage
Electrical characteristics STC08IE120HV
6/11
Figure 7. Reverse biased safe operting
area
Figure 8. Gate threshold voltage vs
temperature
Figure 9. Dynamic collector-emitter
saturation voltage
Figure 10. Inductive load switching time
Figure 11. Inductive load switching time
STC08IE120HV Electrical characteristics
7/11
2.2 Test circuits
Figure 12. Inductive load switching and RBSOA test circuit
Package mechanical data STC08IE120HV
8/11
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
STC08IE120HV Package mechanical data
9/11
DIM.
mm.
MIN. TYP MAX.
A 4.85 5.15
A1 2.20 2.50 2.60
A2 1.27
b0.951.101.30
b2 2.50 2.90
c 0.40 0.80
D 23.85 24 24.15
D1 21.50
E 15.45 15.60 15.75
e2.54
e1 5.08
L 10.20 10.80
L1 2.20 2.50 2.80
L2 18.50
L3 3
P 3.55 3.65
S5.50
TO247-4LHV MECHANICAL DATA
7734874
Revision history STC08IE120HV
10/11
4 Revision history
Table 4. Revision history
Date Revision Changes
11-May-2006 1 Initial release.
16-Oct-2006 2 The lower temperature storage limit has been modified on page 3.
12-Jan-2007 3 The device’s commercial code has been changed from preliminary to
full.
STC08IE120HV
11/11
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