SPECIFICATION IGBT - IPM Device Name 7MBPSORU2A120 MS6M 01051 Type Name Spec. No. 3 4 oO om | oN Om] 2 oO & = @ -- 2 _ a o am 5 2 = e| 8 @ = i iL | ONOMG a ~S 3 a = >t = SS NAME Ae K. CLaunctdl A DATE ae DRAWNTT aw. 5-614) Aygtlaincl CHECKED Tan - & hi Mt Weta CHECKED pytT'og ABojouysal soinag onyaeyq ing jo WWasues UayIM ssaudys ay; jnayyM sasadind Bupnypoemueuw |tyy toy pesn Jou Aped pany Aug go asm aug soy Janzosjeym Aga Aue uj posojosip 10 juey'paydos peonpoldesieyyeu eq |jeys Aayl pypceg ABojouyse) sajna] oijoapg lng jo Aadosd ayy Ss} urssey UCTPEUIO}U! By pu jeLiazeL S14) H04-004-07bRevised Records vole lik Checked | Checked | Approved Drawn ON rc 23 HO4-004-03a MS6M 01051 Applied date Issued date ON. Content Ind. Classi- fication Date Man -5-eb | Enactment Fuji Electric Device Technology Co.,Ltd. PET 2g ABopouyse], aayaaq oiq0e]34 HnZ JO JUOSUOD LUOTIM S501dxo OH] NOUPM Sosodind BunyoemueUl ayy soy pean Jou Aed puiuy Aue jo ash ayy so) Jaasosqeua Ae Aue ul pasojasip Jo 4qua]pordos 'paonpoidad Jatyteu aq jays day) pry en Abajouyoey sore 914998/9 [Ing jo Apedosd ayy 8] Ujesel) Vor Joyal sy) pure jepreyaly spyThis material and the information harein ia the proparty of Fuji Electric Davice Technology Co.,Ltd. They shall be neither reproduced, copied tent, of disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. 1. Package Outline Drawings Package type : P611 109 21 ; a5 +03 13, 840.3 67.4 9.22403 10. 16222 10. 1640-240, 1g20-2 45, 24%0.25 4-6 5.5 - Eire. 1 & gpt0. 15 5 gto. 15 3. g4xthl _ Si Lery [TT | vr) ep de ign! lagl Ing... ts] LO et , 1 4 7 10 16 oo etn <I Ho) |B o - on od a3) | > eS) epi) | P oo ~l Hep) || N = T W y Ue ws | ARs =, - Ss oa 3 QP = i) o () 0.5 24 26 26 16-90.64 2-62.5 6-M5 . 1 T tm oo a AL | an i ua sore 2 _ =| fS|* 2 bes ] _ ~ S Eueirese TMBPSORU2A120 rye co SOA 12004 JAPAH Lot No. Indication of Lot Na. OOO _ ] | ~~ tm Qdered No. in monthly Manufactured month (Jan. ~Sep. : 1-9, Ook. 0, Nov. :N, Dec. :B Last digit of manufactured year 3.22403 2, 64401 2.54401 222 =< E 62.5 _ / tk). oe os L uJ os =, chy ate Si SITTH Het Be Gp (dix 1.5) | CO, 64 10 Details of control terminals Dimensions in mm Fuji Electric Device Technology Co., Lid. MS6M 01051 DWG.NO. 3 93 H04-004-03aThis material and the information herein Is the praperty of Fuji Electric Fuji Electric Davice Tachnolagy Co, Lid. Device Technology Co.,Lid, They shall ba neither reproduced, copied, lent, of disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of 2. Pin Descriptions 2.1 Main circuit Symbol Description U Output (U). V Output (V). W Output (WW). N Negative input supply voltage. P Positive input supply voltage. B Collector terminal of Brake IGBT. 2.2 Control circuit Ne | Symbol! Description @ | GNDU |High side ground (U). @ | VinU [Logic input for IGBT gate drive (U). @ | VecU |High side supply voliage (U). ~@ | GNDV |High side ground (Vv). 6 | Vinv |Logic input for IGBT gate drive (V). @ | VecV High side supply voltage (V). @ | GNDW |High side ground (W). VinW_ |Logic input for IGBT gate drive (W). _ @ | Vecw High side supply voltage (WV). | qd) | GND |Low side ground. a) Vcc |Low side supply voltage. @ | VinDB {Logic input for Brake iGBT gate drive. @ | vinx |Logic input for IGBT gate drive (X). @ VinY | Logic input for IGBT gate drive (Y). @ | VinZ |Legic input for IGBT gate drive (Z). ALM {Low side alarm signal output. Fuji Electric Device Technology Co.,Ltd. 4e MS6M 01051 DWG.NO. ~ 23 H04-004-03aThis matertal and tha information herain is tha property of Fuji Elaciric Davice Technology Co.,Ltd. They shall be neither reproduced, copied lent, or disclosed in any way whatscever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fujl Fiactric Device Technology Co.,Ltd. 3. Block Diagram ovecU ! . Ps ovinU . j Pre-Driver 7 Vz 0 (GNDU J 4 | | +4 U 5 oveeV. | ovinv e SGNDV [7 | Ve ovecW 1 vin {GNOW Li | We ovec : ovink + wy ee [ft 7 | ovinY + ty O | ovinZ ] A Lt q B | oO ovinDB | at a Lt LY N &- o > > a | Pre-drivers include following functions 1. Amplifter for driver RALM : ALM nna, Te Over Heating 2. Short circuit protection 1.5k Protection Circuit 3. Under voltage lockout circuit 4. Over current protection 5. IGBT chip over heating protection 5 Fuji Electric Device Technology Co.,Ltd. MS6M 01051 23 DWG.NO. H04-004-03aThis material and the information herain is the property of Fuji Elactric Davice Technology Co.,Ltd. They shall be neithar reproduced, copied, lent, or disclosed in any way whatsoaver for the use of any third partly nor used for the manufacturing purposes without the express written consent of Fuji Electric Davice Technology Go. itd. 4. Absolute Maximum Ratings Tc=25C unless otherwise specified. Items Symbol Max. | Units Bus Voltage Ipc Voc 900 Vo (between terminal P and N) [Surge Vocrsurge) 1000 Vv Short operating Vsc 800 Vv Collector-Emitter Voltage | 4 Vices 1200 V _ | DC ic 60 A Collector Current ims lop 100 A = Duty=100% *2 -l 50 A ~~ |Collector Power Dissipation One transistor *3 Pc 300 Ww Collector Current DC Ie 25 A ims lep 50 A & Forward Current of Diode IF 25 A Collector Power Dissipation One transistor *3 Po 172 W Supply Voltage of Pre-Driver 4 Vec 20 V Input Signal Voltage *5 Vin Veo+0.5 Vv Input Signal Current tin ; 3 mA Alarm Signal Voltage 6 VALM | Vec Vv Alarm Signal Current 7 TALM 20 mA Junction Temperature Tj 150 C Operating Case Temperature Topr 100 C Storage Temperature | Tstg 125 C Isolating Voltage *g Viso Ac2500 | Vrms Screw Torque Terminal (M5) | - 3.5 Nm Mounting (M5) Notes 1; Vees shall be apptied to the input voltage between terminal P and U or V or W or DB, N and U or V or W or DB *2: Duty=125C/Rth(j-c)D/(lcx VF MAX) x 100 *3: Po=125C/Rth-c}Q=300W (inverter) Pc=125C/Rth(j-c)Q=172W (Brake) *4: Vcc shall be applied to the input voltage between terminal No.3 and 1, 6 and 4, 9 and 7, 41 and 710. *5: Vin shall be applied to the input voltage between terminal No.2 and 1, 5 and 4, 8 and 7, 12~15 and 10. *6: VALM shall be applied to the voltage between terminal No.16 and 10. *7: [ALM shall be applied to the input current to terminal No.16. *8: Terminal to base, 50/60Hz sine wave 1min. S 6 Fuji Electric Device Technology Co.,Ltd. | MS6M 01051 | 5 3 = HO4-004-03a5. Electrical Characteristics Tj=25C, Vec=15V unless otherwise specified. 5.1 Main circuit This material and the information harain is the property of Fuji Elactric Device Technology Co. ,Lid. They shall be neither reproduced, copied lant, for the manufacturing purposes without the express written consent of or disclosed in any way whatsoaver for the use of any third party nor used Fuji Electric Davica Technology Go. Ltd. ltem Symbol Conditions Min. Typ. Max. Units Collector Current Ices |Vce=1200V - - 1.0 mA at off signal input Vin terminal apen. S Collector-Emitter Vesa [IC#50A Terminal - 4.9 2.2 V @ saturation voltage Fig.4 Chip - 1.8 - V Forward voltage of FWD VF i-lc=50A Terminal - 2.2 25 V Fig. Chip - 2.1 - V Collector Current Ices jVce=1200V - - 1.0 mA at off signal input Vin terminal open. & |Collector-Emitter Versa) [1c=25A Terminal - 1.9 2.2 V oO | oO | saturation voltage Fig.4 (Chip - - - Vv Forward voltage of FWD VF f-lc=25A Terminal - 2.1 2.4 V Fig.5 Chip - - - V Turn-on time ton |VDC=600V, Tj=125C 1.2 1.8 - us Turn-off time toff |ic=50A Fig.1,6 - 2.6 3.6 us trr = |VDC=600V Reverse recovery time - - 0.3 Hs IF=50A Fig.1,6 5.2 Control circuit ltem Symbol Conditions Min. Typ. Max. Units Supply current of P-side Iccp jSwitching Frequency 18 A - - m pre-driver (per one unit) = 0-15kHz Supply current of N-side iccn $|Tc=-20~ 100C - - 72 mA pre-driver Fig.7 input signal threshold voltage | Vinth(on)}}Vin-GND ON} 1.00 41.35 1.70 V Vinth(off) OFF) 1.25 1.60 1.95 V Input Zener Voltage Vz |Rin=20k0 - 8.0 Vv ALM-GND |Te=-20C] 1.1 - - ms Alarm Signal Held Time tALM Fo=25C - 2.0 - ms Fig.2 To=125C - - 4.0 ms Resistor for current limit RALM 1425 1500 1575 G ; Ona Ss 7. Fuji Electric Device Technology Co.,Ltd. 8 MS6M 01051 99 Qa HO4-004-03aThis material and the information herain is the property of Fuji Elactric Device Technology Co,,Lid, They shall be naithar reproduced, copied lant, or disclosed In any way whatsoaver for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Davice Technology Co.,Ltd. 5.3 Protection Circuit (Vec=15V} Item Symbol Conditions Min. Typ. Max. Units Over Current Inverter loc = |Tj=125C . 75 - - A Protection Level Brake Fig.3 38 - - A Over Current Protection Delay time tdoc |Tj=125C - 5 - HS SC Protection Delay time tsc |Tj=125C Fig.8 - - 8 Hs iGBT Chips Over Heating TJOH |Surface of | a 150 - - Cc Protection Temperature Level ISBT Chips Over Heating Protection Hysteresis Tie 20 - C Case Over Heating TcOH |VDC=OV, Ic=0A 0 | - 425 | cc Protection Temperature Level Case Temperature Over Heating Protection Hysteresis TcH - 20 - Under Voltage Protection Level VUV 711.0 - 12.5 Under Voltage Protection Hysteresis VH 0.2 0.5 ~ . Thermal Characteristics (Tc = 25C) Item Symbol Min. Typ. Max. Units Junction to Case Inverter | IGBT Rth(j-cjQ - - 0.42 "CAN Thermal Resistance FWD Rth(j-c)D - - 0.99 "CAN *9 Brake IGBT Rth(j-c)Q - - 0.73 CAV FWD Rth(j-c)D { = - 2,05 CA Case to Fin Thermal Resistance with Compound Rth{c-f} | - 0.05 CW 9: For Idevice , Case is under the device | . Noise immunity (Vde=300V, Vee=15V, Test Circuit Fig 9.) ltem | Conditions Min. Typ. Max. Units Common mode Pulse width 1us, polarity +,10 minuets +2.0 - - kV rectangular noise Judge: no over-current, no miss operating Common mode Rise time 7.2us,Fall time S0usInterval 20s,10 times] +5.0 - - kV lightning surge Judge:no over-current, no miss operating . Recommended Operating Conditions i Item Symbo! Min. Typ. Max. Units DC Bus Voltage VDC - . goo | ov Power Supply Voltage of Pre-Driver Vee 13.5 15.0 16.5 Vv Screw Torque {M5} - 2.5 - 3.0 Nm . Weight item Symbol Min. Typ. Max. Units Weight Wt - 450 - g o Fuji Electric Device Technology Co.,Ltd. S MS6M 01051 O53 oo H04-004-03aThis material and the information herain is the proparty of Fuji Elactric Device Technology Co.,Ltd. They shall be neithar reproduced, copied, ient, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Elactric Devica Technology Ca. ,Lid. Vinth(on) Vinth( off) off Input signal on 4 trr \4 >! Gollector current ! ' 1 ! I 1 1 | ! 1 | ( 1 l ( 1 } i 1 1 1 1 i t jon toff ! : E Figure1. Switching Time Waveform Difinitions. off Nin (lowside input) lo ff | [| fo Vge (inside IPM) I \ gate of [| ! [\ fault 4 (inside IPM) fo LL prota FL /ALM (alarm output) a ee ee ' l t { i bt __ fo <-____\__ 1 <{${_ 1 tALM>max. (1) tALM>max. @) tALM=2ms(typ.) @ fault Over-current, Under-voltage or Over-heat Figure2. Input/Output Timing Diagram. Necessary conditions for alarm reset (refer to @ to @ in figure.) @ This represents the case when a failure-causing Fault lasts for a period more than tALM. The alarm resets when the input Vin is OFF and the Fault has disappeared. @ This represents the case when the ON condition of the input Vin lasts for a period more than tALM. The alarm resets when the Vin turns OFF under no Fault conditions. @ This represents the case when the Fault disappears and the Vin turns OFF within tALM. The alarm resets after lasting for a period of the specified time tALM. off Input signal \ on j \ loc -... Collector current 1 1 1 I I 1 1 1 I 1 I 1 it i ot Alarm output 1! f I pe Nt << tdoc (pt tdoc Figure3. Over-current Protection Timing Diagram. Period @: When a collector current over the OC levei flows and the OFF command is input within @ period less than the trip delay time tdoc, the current is hard-interrupted and no alarm is output. Period @: When a collector current over the OC level flows for a period more than the trip delay time tdoc, the current is soft-interrupted. If this is detected at the lower arm IGBTs, an alarm is output. 9 23 Fuji Electric Device Technology Co.,Ltd. MS6M 01051 DWG.NO. 7 H04-004-03aFigure6. Switching Characteristics Test Circuit Open lec Figure?. Icc Test Circuit Figures. Difinition of isc This matarlal and the infarmation herein Is the property of Fuji Elactric Device Tachnology Co.,Lid. Thay shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used fer the manufacturing purposes without the express written consent of Fuji Electric Davica Technalogy Co. Lid. veut PT : VinU + Cc ; GNDU Vee] IPM vid x Vinx ALM 4700p GNDU t & rh Cooling Fin Figure9. Noise Test Circuit Figure5. VF Test Circuit (Terminal} Fuji Electric Device Technology Co.,Ltd. DWG.NO. MS6M 01051 10 93 H04-004-03aThis material and the information herein is the property of Fuji Elactric Davice Technology Co. Lid. They shall ba neithar reproduced, copied tent, or disclosed in any way whatsoaver for the use of any third party ner used for the manufacturing purposes without the express written consent of Fuji Electric Davice Tachnatogy Ga. Ltd. 10. Truth table 10.1 |GBT Contro! 10.2 (1) (2) The following table shows the IGBT ON/OFF status with respect to the input signal The IGBT turn-on when Vin is at Low level under no alarm condition. Input signal Alarm output Output (IGBT) Low High On Low Low Off High - Off Fault Detection When a fault is detected at the high side, only the detected arm stops its output. At that time the IPM dosen't any alarm. When a fault is detected at the low side, all the lower arms siop their outputs and the IPM outputs an alarm of the low side, Operation of IGBT Cause of High side Low side Output U-phase | V-phase | W-phase High side | OC OFF. * * * High U-phase | UV OFF * * * High TjOH OFF * * * High High side Oc * OFF * * High V-phase UV * OFF * * High TjOH * OFF : * High High side | OC * * OFF * High |W-phase UV * * OFF * High TjOH * * OFF * High Oc * * ; OFF Low Low side UV * * * OFF Low TjOH * * * OFF Low TcOH * * * OFF Low *: Depend on input logic. Fuji Electric Device Technology Go,ltd. |3) msemotos1 1 = H04-004-03aThis material and the infermation herein is the property of Fuji Elaciric Davice Technology Co.,Ltd. They shall be neither reproduced, copied lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the expross written consent of Fuji Elactric Device Tachnology Co, Ltd. 11. Cautions for design and application (1) Trace routing layout should be designed with particular attention to ieast stray capacity between the primary and secondary sides of optical isolators by minimizing the wiring length between the optical isolators and the IPM input terminals as possible. PHrhAPFEIPMO A Ain O BoP L AB HCL PahATFIORME= RAO BHRBBEDELENSVYLAPOMILT PSL, (2) Mount a capacitor between Vcc and GND of each high-speed optical isolator as close to as possible, me I4 KAD SOVcec-GNDEIZ,. AV FUP EW RSITEL TRUITT FEL, (3) For the high-speed optical isolator, use high-CMR type one with tpHL, tpLH S 0.8us. mia bAT SIL, tpHLtpLHS0.8us, BCMRE1( PAC MACE, (4) For the alarm output circuit, use low-speed type optical isolators with CTR 2 100%. FISHABBIS RIAA PSCTIRE100%N S14 FR IOERCESL, (5) For the control power Vcc, use four power supplies isolated each. And they should be designed to reduce the voltage variations. mii iiVecls. ike 14 BIRSAL CCEA, EK, BERPMSMALRHCLT FA, (6} Suppress surge voltages as possible by reducing the inductance between the DC bus P and N, and connecting some capacitors between the P and N terminals. P-NHO Et SRS MRSEIHEL YS OSV AtEL, P-Nia-F RLV TU ee SEL THU BEAERMLT Fat). (7) To prevent noise intrusion from the AC lines, connect a capacitor of some 4700pF between the three-phase lines each and the ground. ACTIV DAO/AABAEI CEOS, SHER PF AIL 47 OOpFHOAY TY CEL TAL, (8) At the extemal circuit, never connect the control terminal GNDU to the main terminal U-phase, GNDV to V-phase, GNDW to W-phase, and GND to N-phase. Otherwise, malfunctions may be caused. ill fH GN DUES ty-FU8 , el GNDVE SE dP VAR, BEE GNDWE EEE W4R fal fel GND SE tN ARPS CHERLLY TC PSL, REO RAILQUET, (9) Take note that an optical isolators response to the primary input signal becomes slow if a capacitor is connected between the input terminal and GND. AdisaF-GNDEIL IY FY Pes Sk. Pa bh 5RAAHESIMS SSR RGVYET OCIEBCESL, 127 Fuji Electric Device Technology Co.,Ltd. MS6M 01051 DWG.NO. / 23 T HO4-004-03aThis material and the information herein is the proparty of Fuji Elactric Davice Technology Co.,Ltd. They shall ba neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express writken consent of Fuji Electric Daviea Technelogy Ga. ,Ltd. (10) Taking the used isolators CTR into account, design with a sufficient allowance to decide the primary forward current of the optical isolator. PHbAPSO- RABE. BEL OVFFHSSOCTRIESRLANCRBSLOLBHICLT FAL, (11) In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity, If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be snough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. {Spreading state of the thermal campound can be confirmed by removing this product after mounting.) RPE RMI (CRIT SRL, ARBRE SEM OIVAGLESEC RACES), M. SHES CRLELY. SHARMNPBEOLYUT SL, AVAIUEMTACEF RACES, MAE ICkO MA ERR SRMAVET. AV AOLESB RS SIBICIL, Smt BliaL- NIVEA CU SRERBLTCESL, (RRLABICRTE RUST T EQUAL EO RAVESERRTSEAHEET.) (12) Use this product with keeping the cooling fin's flatness between screw holes within 10Qum at 100mm and the roughness within 10um, Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. MMI 4 ALBURY ATT el OES 100mm C100umMEL F,. RAOMAL1OumLL FICLT FAL, BACH RYIMH UT SCADA SERRE RIL, BKRRICARTSBAMSVET. Bh. BAGH RY POMASAHSL, ARRCAHI1Y OMICS CHRP ECAY, MICRO CLMHVET, (13) This product is designed on the assumption that it applies to an inverter use, Sufficient examination is required when applying to a converter use. Please contact Fuji Electric Co.,Ltd if you would like to applying to converter use. AGL, fN\SAEAO MASAI EN CHAVET. aso en SB ele, TAHGRHMNBSCY, ol, aA FA ASH SiS It HRC ESL, (14) Please see the [IGBT-IPM APPLICATION MANUAL] and fIGBT MODULES APPLICATION MANUAL. (IGBT-IPM PAU7YavvraP7 ILIRUTIGBTEYaIL PAY Vay yrs] ff IRCEAL, Fuji Electric Device Technology Co.,Ltd. DWG.NO, 13 MS6M 01051 93 T H04~-004-03aThis matarial and the information herain is the property of Fuji Elactric Davice Technology Co.,Ltd. They shall be neithar reproducad, copied, lent, or disciosed jn any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written cansent of Fuji Electric Device Technolagy Go.,Ltd. : vet) [de Oa a Jl revi ik Plead wintd | . 2 fase ealen ese pe hy atu y Herts 7 : vow : 5, . op | ties : Olu] 204. wey | 10 ws , lyst aiid Peas pele Gay ie : Ves Brake resister hi Oty | 204 wee | tou a ye Vint fee pe hee chow : Mer : vies 1 | 30 cee T 1 Mints cae i pe hpe aD ; otal sas IPM pt TT 1.3 ! Vin f>- FR oral = = yam L vise Et [be rte : ono een < Virb Fey oop eb ms Alarm outria, 4 ; | m fee - AM rc ts Treen Lael 13. Package and Marking Please see the packing specification of IPM (Technical Rep. No. : MT6M04140). IPM #8 tke MT6M04 1404 SRR CTE, 14. Cautions for storage and transportation - Store the modules at the normal temperature and humidity (5 to 35C, 45 to 75%). Hin i (6~35C, 45~75%) CRBLT Fabs, - Avoid a sudden change in ambient temperature to prevent condensation on the module surfaces. EVA LOR A faBLGLI, BRORERILERI CPE, : Avoid places where corrosive gas generates or much dust exists. BREAADORLEM, MEOS MBB CSL, * Store the module terminals under unprocessed conditions EVI/MLOBFISRMLOREGRSTSLE, . * Avoid physical shock or falls during the transportation. WEI MBS SATU PSEC PAL, 15. Scope of application This specification is applied to the IGBT-IPM (type: 7MBP50RU2A120). ARLHS IL. IGBT-IPM (8S : IMBP5ORUZA120ISS ATS, 16. Based safety standards UL1557 Fuji Electric Device Technology Co.,Ltd. MS6M 01051 4 .. DWG.NO. ~ 23 H04-004-03aThis material and the information herain ia the property of Fuji Elactric lant, , capt Davice Technology Co.,Ltd. They shall be neither reproduced or disclosed in any way whatsceyver for the usa of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Deviea Technology Co.,Ltd. 17. Characteristics 17.1 Control Circuit Characteristics (Representative) Power supply current vs. Switching frequency Ti=25"C (typ. ) q r ro 0 peat peng ong rpenrieen Heside a ~ P-side Wet : : Voor 15 foe AD fe err ethics ee cee cere te Cessyeet Vec= TOV] . 4 8 4 ie 5 2 4 > A a 4 : 3 4 & = Veo=15..... Voc=13 i pl tele teenteehebetiede o 5 10 15 20 B Switching frequency :fsw [kHz] Under voltage vs. Junction temperature (typ. } 18 ee 1 44 + = - 5 =~ G > z = Junction temperature : T#CC} Alarm held time vs. Power supply voltage (typ.) ery 1 I DR bec ebeee : i By bu pecteetbeee esgic eee a 3 [ 1 s L 4 1S fen | E J 2 L 4 2 [ a a 4 ae 1 & s = OB Peseneee petted 1z 1g 14 18 16 7 18 Power supply voltape : Yeo (V) input signal threshold voltage vs. Power supply voltage(typ. ) 2 eee 7 Tjeere worn Tjsi2so nN a TOT Tapp Po] 7 Hi pee . Hy Vinth(e ? lngut signal threshold voltage : Vinthon}, Vinth{off) (} a t ee pili, 2 13 14 15 16 17 18 Powar supniy voltage : Yee (} Under voltage hysterisis vs. dunction temperature (typ. ) I _ OB = = 2 08 a 5 B 2 Bo4 a 3 = = Eo2 a Junction temperature : Tj (o} Over heating characteristics FeOH, TIGH, TcH, FjH vs. Vee {typ.) QU rr _ | i TiOH | 6 | | = wb + =e | 25 q Over heating protection OH hyster isis TsH,TjH } 12 13 14 15 16 7 18 You () po ty iy Powsr supply voltage : Fuji Electric Device Technology Co.,Ltd. 15 MS6M 01051 DWG.NO. 23 HO4-004-03aThis material and the information herain is the proparty of Fuji Elactric Device Technology Co.,Ltd. They shall be neithar reproducad, copied, lant, or disclosed in any way whatsoaver for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Davice Technology Co.,Ltd. 17.2 Main Circuit Characteristics (Representative) Collector current vs. Collector-Emjtter voltage (typ) Collector current vs. Collactor-Emitter voltage (typ.) Tj=25"C (Chip) POD pe so cEereOGE TB seerenseeen [ : i woos f/f i = | ly i i i r : Vec=1d : sf My = 3 , i a i 5 40 be. . fora} : eo : foo to 8 an | DI) Reeenecneeeedeececeee cece pte cee eee Miele wesensaeecee i: iv 4 ; vob 0 O58 1 Lo a 26 3 Collector current vs, Gollector-Emitter voltage (typ. ) Colisctor-Emitter voltage Vee fV] {Tefal Sallestar current 100 a0 50 4Q 20 Tj=25C (erninal) PT EE ETT [ oo=37 Uf ; | r i Masi 1 L. i Ebfocmnd De i ee te i | a 0.5 1 1.5 2 26 3 Gellectar-Emitter voltage :ce [V] Collector current vs, Col lector-Emitter voltage (typ. ) Tj=125C (Chip) Tj=t25C Terminal) 100 rrr FRO rrp i povceeenen Yeus15V~""7 80 i Ae Yoos 18V + fr i : Pee r i i is ; : fis 4 : fs | = : Vor As | = a oF i Po Af 31 Veostv 2 Yoga av GQ) fesesneecseneefeesseeeeeee = sf ee 5 5 | 5 5 40 - : 5 a {| ; | 8 | 20 : Ee ttaseccaeeeheneeeeee : i a as 1 16 2 25 i Q 05 1 15 2 25 3 Co|lector-Emitter valtaze <Vee [] Collector~Emitter valtaga Yoo [V} Forward current vs. Forward voltage (typ. ) Forward current vs, Forward voltage (typ. ) Chip) (Terminal) 1d oer rn ae VU peep rt ar rr rr poteerernten enter ag : 2 | z = po} = - | zo 40 3 2 f : & BD eccrine reese cifove esnseeedee . : . ves P : : oan : : : ! Ri te a 0.5 i Ls 2 28 3 0 15 1 La 2 2.5 i Forward voltage :f (] Forward valtage VF (] S , Fuji Electric Device Technology Co,Ltd. |) mMs6m 01051 16 59 a H04~-004-03aThis material and tha information herein is the property of Fuji Electric Device Technology Co.,Lid. They shall be neither reproduced, copied,lent, of disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fufi Electric Device Technolagy Co.,Ltd. Switching. Loss vs. Collector Gurrent (typ. ) Switching Loss vs. Collector Current (typ. ) Ede G00, Voo=15V, Tjs26 ib Ede=600, Voo=15, Tj=124C Ip pr + ops A = | = | = BD = 10 |- : & 10 4 . = ms 5 5 ra _ B | s 7 we B 5b B35 2 g 4 3 z 0 La a + a 20 40 6 a0 200 190 Collector current :I [A] Collestar current lc [A] Reversed biased safe operating area ono Veo=15V,TjS125C (min.) Transient thermal resistance (max. } ry oy pn i T TT peerage y ! 1 ' 1 TT T Poe ery | = Ss 150 - ~ wee = 3 4 2 2 = ce & : : : i L 100 - + : + cecec ace n eres ef 8 5 RESOA : d 5 0.1 . (Repetitive pulse) a 5 i 2 Q | oo 3 2 2 50 + i a 2 J 2 a 0 k 5 4 i t L i L : : 7 aot 0 30a 600 Ho 1260 7500 0.001 0.03 G1 1 Cailector-Enitter veltage Vee [V3 Pufse width :Pw [sec] Power erat ae avi ca) (max. ) Power dorating for FWD (max. ) 400 peermerenyoepre B I nny (per device) 7 ED pre prmreperr poe = 509 - = ] = & 1 5 5 200 | > | z z & 200 4 | o o 4 - de 5 100 + a % ioe 3 & | 1 a | 0 50 100 5G u a i ino 15D Case Temperature Te [C} Case Temparature -Te ['c} NO. Fuji Electric Device Technology Co.,Ltd. = MS6M 01051 V7, 93 DWG H04-004-03aThis material and the information herein is the proparty of Fuji Elactric Device Technology Co.,Ltd. Thay shall ba neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Switching time vs, Collector current (typ. } Edc=600Y, Voe=15, Tj=25C paeeiersnais : ot 1 1 4b ou 3 3 - het as 3h 5 * o Ee B= 2b : be : & : = : a ~ s : & iF e bees wat beeches wi Lai ae 9 20 40 60 80 100 Gallector current :Io [A] Reverse recovery characteristics (typ. ) trr, irr vs. ey Peery poe =< tre Tjsl 23C > oe 2 S Reverse racovery tira :trr [nsec] Raverse recovery current Forward current If [A] Switching time ton, toff [usec] Switching time vs. Cal lector current (typ. } mT 20 40 foi lector Edo=600V, Vec=E5V, Tj=125"C ery my E doses ye bad tad Do bead al 0 80 100 currant :Io [Aj Fuji Electric Device Technology Co.,Ltd. DWG.NO. MS6M 01051 18. 23 H04-004-03aThis material and tha information harain is tha property of Fuji Electric Device Technology Co. ,Lid. They shall be neither reproduced, copied lant, or disciosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Deviaa Technolagy Go. ,Ltd. 17.2 Dynamic Brake Characteristics (Representative) Collector current vs. Coliector-Emitter voltage (typ. ) Tj=25C (Terminal) 80 pry ps pa AE free cnenne teen eee een nde ce eavecen ed andacee ren menenepepe meget tes apc cgea Daidedeeee: f = 2 L 30 we fpenes terre bene rcaes npemneseneeal th fanarectendeneteecnarafennseees 4 = L = 5 a Le : 4 2 Levsreeee ssfetseeseaess _ oa 5 4 = 3 TD pewsssneeecbenenecerescfe nan enecgile fe sees eenesshe cen conenns fesepeg pa nedta stewenee ad a a tt i ed . bard 2 po toil a a 05 1 1.5 2 2.5 3 a5 Collector-Emittar voltage -Voa [] Forward current vs. Forward voltage (typ, ) (Terminal} 50 pr ! : pm Tend | } > Tjseeretjsizsre | 2 fo | age .| Forward currant na a F a a5 1 14 2 2.5 3 3.6 Ferward voltaga Vf [VJ Reversed biased safe operating area Voc=t5Y, F73125C (min. ) reef 10 pea Prenat etempeyen ony i ot wo JF =| = 4 2 4 # | & : : : : 5 50 * * wees tae e : : : 3 : : Y a 1 2 RBSGA : 3 i (Repetitive pulse) : ple nee i 0 4300 600 $00 1206 100 Gollector-Emittar voltaga Vee [] Gatlector Power Dissipation Pc [] Geilector current vs. Golfector-Emitter voitage (typ. ) Tj=125 (Terminal) BO TE tr Voo=17 i Voo=15Y _ Af i Voor lav = We = i Mf FQ eeneeeeeeee bec renresee 2 : bagl ob nacseneeco bens eee es 4 =a 7? = My s = g 20 fm nwo nane ce i waneeeeee Ad i a b : 5 t | a +t ] TD rev ee cttateeeseneereneahecnnenane def eancesaure dee sencemennefseses eeaeadere vaneese 4 a 08 1 1 z 2.5 3 35 Sollector-Emitter voltage :oa [V3 0 Franstent thermal resistance (max. ) 0.1 Thermal resistance :Ath(j-o) [C/W] 081 scsudoet be LE i 0.001 0.0% oj j Pulse width :Pw [sac] Power derating for IGBT (max, } 200 (per device) ' : F nn a g a T an a 0 50 100 150 Gasa Tetpearature (To fC} Fuji Electric Device Technology Co.,Ltd. DWG.NO, 19." MS6M 01051 93 H04-004-03aThis material and the information herein is the proparty of Fuji Elactric Device Technology Co.,Lid. They shall be neither reproduced, copled, lent, for the manufacturing purposes without the express written consent of or disclosed in any way whatsoaver for the use of any third party nor used Fuji Electric Devica Technology Co.,Ltd. 18, Reliability Test : Test condions and results Test Reference normms|Number|Accept-| Number cate- | Na, Test items Test methods and conditions EIAJ of jance of igaries ED-4701 sample |number| failure 1 |Terminal strength }Pull force : 40 N (main terminal) Test Methed 401 5 {1:0) 0 10 N (control terminal} Method E (Pull test} Test time 1.10 +1 sec. 2 jMounting Strength Screw torque + 2.5 ~ 3.5 N-m (M5) Test Method 402 5 (1:9) 0 Test time 11041 sec. method I 3 | Vibration Range of frequency : 10~500 Hz Test Methad 403 5 (1:0) 0 Sweeping time : 15 min. Condition code 8 Acceleration : 100 mis* Sweeping direction =: Each X,Y,Z axis 2 Test time : 6 br, (2hr/direction) | 4 [Shock {Maximum acceleratic : 5000 mis? Test Mathod 404 5 [t1:0)] 6 a Pulse width 1.0 ms Condition code B 5 Direction : Bach X,.2 axis s Test time : 3 times/direction 3 5 |Solderabitlity Solder temp. 1 235 5 C Test Method 303 5 (1:0) a Immersion duration : 5.0 40.5 sec, Condition code A Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. 6 |Resistance to Solder ternp. : 260 25 C Test Method 302 5 (1:0) a soldering heat immersion time : 10 41sec. Condition code A Test time : 1 time Each terminal should be Immersed in solder within 1~1.5rmm from the body. 1 JHigh temperature |Storage temp. : 12545 C Test Method 201} 5 (1:0)) 0 storage Test duration + 1000 hr. 2 jLow temperature |Storage temp. : -40 45 "C Test Method 202 5 i({1:0}] a storage Test duration +1000 hr. 3 {Temperature Storage temp. : 8522 C Test Method 103 5 i{1:0)] oO humidity storage jRelative humidity : 65 25% Test code C Test duration : 1000hr, 4 |Unsaturated Test temp. 1120 2C TestMethod 103} 5 [(1:0)/ 0 pressure cooker |Atmospheric pressur : 1.7x10 Pa Test code E 4 Test humidity : B5 +5% 2 Test duration 96 hr. : = 5 |Temperature Test temp. > Minimum storage temp. -40 +5C | Test Method 105 5 (1:0) 0 2 cycle Maximum storage temp. 125 +5C S Normal temp. 5~ 35C 2 Dwell time > Tmin ~ Ts ~ Tmax ~ TN ul thr. O.Shr. ihr, O.Shr, {Number of cycles : 100 cycles 6 |Thermal shock ay Test Mathod 307 5 (1:0) a Test temp. : High temp. side 100 C method i +5 Condition cede A Lowtemp. side oC Fluid used > Pure water (running water) Dipping time : 5 min. par each temp. Transfer time : 10 sec. Numberofcycles _; tO cycles . . S 0 Fuji Electric Device Technology Co.,Ltd. | MS6M 01051 53 S T HO4-004~03aThis material and tha information herain ja tha proparty of Fufi Electric Device Technology Co.,Ltd. Thay shall be neithar reproduced, copied, lent, for the manufacturing purposes without the express written consent of or disclosed in any way whaisoaver for the use of any third party nor used Fuji Electric Device Technology Co. Lid. Test Reference norms |Number:Accept- cate- | No. Test items Test methods and conditions EIAJ of jfance gories ED-4701 sample |number 1 |High temperature | Test temp. : Ta=125 45C Test Method 101 5 (7:0) reverse bias (Tj S 150 c) 2 Bias Voltage : VO = O.8*xVCES a Bias Method : Applied DC veltage to C-E O Veo = 18V E | Test duration : 1000 hr. | 2 |Intermitted [ON time : 2 sac, Test Method 106 5 [1:0) = operating life OFF time : 18 sec. a (Power cycle) Test temp. > ATjF100 t8deg Tj S$ 150 C, Ta#25 45C Number of cycles : 15060 cycies Failure Criteria ltem Characteristic Symbol Failure criteria Unit Lower limit] Upper limit Electrical Leakage current ICES USLx2.0 mA characteristic |Saturation voliage VCE(sat) - USL*1.2 V Forward voltage VF ~ _USL*1.2 Vv Thermal IGBT Rth(j-c)Q - USL*1.2 C/W resistance (FWD Rth(j-c)D - USL*1.2 C/W Over Current Protection| loc LSLx0.8 | USL*1.2 A Alarm signal hold time tALM LSLx0.8 | USL1.2 ms Over heating Protection TFcOH LSL*0.8 | USL*1.2 C Isolation voltage Viso Broken insulation - Visual {Visual inspection inspection Peeling - The visual sample - Plating and the others __ | LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tesis, for example, moisture resistance tests, each component shail be made wipe or dry completely before the measurement. Fuji Electric Device Technology Co,Ltd. | msemo1051 21 53 = , H04-004-03aThis material and the information herein is the property of Fuji Elactric Device Technology Co.,Lid. They shall ba neither reproduced, copied, tent, or disclosed in any way whatsoever for the use of any third party ner used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Warnings . This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. HROPMRALR (SE, Bit, MES) OMAN CHER FEL, RA RRMA CHAT SL. STORET SBAMBUET. . Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. A-OFEOSACHTAMRLESSCSEL. BRSRLAREOMIAMMEREOLAX RIZAL AEBS HT TARE ALY CCPESLY, . When studying the device at a normal turn-off action, make sure that working paths of the turn-off voltage and current are within the RBSOA specification. Ge OFVA IHERB SRT RBORHOBIIIL SLA TEE: BiiO RPe i RBSOATHAILAS CESRBLT Fat, . Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. RmOtARIwe THIEL, PRO ERE GME CESORHOL, AWERAWALTRAL, lm Om Wits eA CHALKE. REO BBA LUICET MS SSR HVUET, . Ifthe product had been used in the environment with acid, organic matter, and corrosive gas (For example : hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. Ge -RBEAA HLAR, BRAS CSc Ria Cemehreseas, fl RHE PRE ORE RLA DET . Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is classified to delta-T] mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary. AR Gad, VI 1 IL HTP CA PSO GR TEE No: MTSF1 2959), AIY 49 MINBITIEOD ATITKSBS OHMIC. ATAILLSBAMAVET, oNs7ARE(TIOO LF FRILLS MALLA CHY, AMRECEAS SROMMBHICRELET. T-ABEO LE PRAMBARICR SSS. SAS RIIM+HREBLICER Fa. . Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. EGFR Gl ligt hALSACHBEEALC FAL, im PORTIA, HAT ROS SRIOF BS MRVET, Fuji Electric Device Technology Co.,Ltd. 22 a MS6M 01051 DWG.NO. 23 H04-004-03aThis matarial and tha Information herein is the proparty of Fuji Electric Device Technology Co.,Lid. They shall be neither reproduced, capied, lent, or disclosed in any way whatsoever for the use cf any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Devica Tachrology Ce, Ltd. 8, According to the outline drawing, select praper length of screw for main terminal. Longer screws may break the case. BRIER SEMTAOSVORSIS, HB RITHDVELGER Fe, RUBRWET-AMRIAT OBAMHVET, 9. lf excessive static electricity is applied to the control terminals, the devices can be broken. implement some countermeasures against static electricity. Fin FAA Ea MANES, START ABS AHVET. ARWIR La Be Sit HA HLT PSL, Caution 1. Fuji Electric Deveice Technology is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury of death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. SLSR ny (ares) 122 FT ROR BE EBEOR LIPBO TUT. LAL, $A RITRMARELLY, REET SA MGHVET. BL BRERA BOMBERS IEA, HRELCAS BH: NE SICLAM BIC AT SIS PHAM GRR ARM CARL ESOT Rika EEA ILaEt ATMA ILR HERS ROTO FRE HUT PSL, 2. The application examples described in this specification only explain typical ones that used the Fuji Electric Deveice Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. AHIR CHO AGL. BE BRT NV 4A79/0Y BES RLERRNE BERT S40 CAY. SMB s CLARA. COMMEMORMIIO MT SRS LEME O BEAL CHHVECA, 3. The product described in this specification is not designed nor made for being applied fo the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. ACR IT SCARE TLR ald, ACRIL DD PSLIGIRG F CMS SAB OL MIL ATF LICR SASZCLE BME CHET SUREHECO CAVEDA, ARE BS BBE MAR. AEE. ERS. RHA ailfet, AE PARE OLMLLV AT LY, SRR OLAASCRHORIL, VATABRRUER ESIC MET SILETHROL, CAR PSL. if there is any unclear matter in this specification, please contact Fuji Electric Deveice Technology Co., Ltd. | ATHBILCO TAO RAHVELKS. BLE N 4A79/0/ ICBM St Fea, Fuji Electric Device Technology Co.,Ltd. 99 | MS6M 01051 DWG.NO, HO4-004-03a