PD-97179B IRHNM597110 JANSR2N7506U8 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/749 5 Product Summary Part Number IRHNM597110 IRHNM593110 Radiation Level RDS(on) I D 100K Rads (Si) 1.2 -3.1A 300K Rads (Si) 1.2 -3.1A QPL Part Number JANSR2N7506U8 JANSF2N7506U8 SMD-0.2 Refer to Page 10 for 1 Additional Part Number IRHNMC597110 (Ceramic Lid) International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/ (mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. (METAL LID) Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Complimentary N-Channel Available IRHNM57110, IRHNMC57110 Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight TECHNOLOGY Units -3.1 -2.0 -12.4 23 0.18 20 28 -3.1 2.3 -21 -55 to 150 300 (for 5s) 0.25 (Typical) A W W/C V mJ A mJ V/ns C g For footnotes refer to the last page www.irf.com 1 09/03/10 Pre-Irradiation IRHNM597110, JANSR2N7506U8 Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) BVDSS Parameter Min Drain-to-Source Breakdown Voltage -100 BV DSS /T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance VGS(th) Gate Threshold Voltage -2.0 -- VGS(th)/TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance 1.9 IDSS Zero Gate Voltage Drain Current -- -- Typ Max Units -- -- V -0.13 -- V/C -- 1.2 -- 4.88 -- -- -- -4.0 -- -- -10 -25 V mV/C S nA IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -100 100 11 5.0 4.0 18 26 24 85 -- Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 379 98 9.5 -- -- -- Rg Gate Resistance VGS = -12V, ID = -2.0AA VDS = VGS, ID = -1.0mA nC VDS = -15V, IDS = -2.0A A VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS = -12V, ID = -3.1A VDS = -50V ns VDD = -50V, ID = -3.1A, VGS = -12V, RG = 7.5 A nH pF 24 Test Conditions VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 100KHz f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD trr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time -- -- -- -- -- -- -- -- -- -- -3.1 -12.4 -5.0 100 271 Test Conditions A V ns nC Tj = 25C, IS = -3.1A, VGS = 0V Tj = 25C, IF = -3.1A, di/dt -100A/s VDD -50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units -- -- 5.4 Test Conditions C/W Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Pre-Irradiation Radiation Characteristics IRHNM597110, JANSR2N7506U8 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) Up to 300K Rads (Si) 1 Min Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-state Resistance (SMD-0.2) Diode Forward Voltage VSD Max Units Test Conditions V -100 -2.0 -- -- -- -- -4.0 -100 100 -10 A VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20V VDS = -80V, VGS = 0V -- 0.916 VGS = -12V, ID = -2.0A 1.2 VGS = -12V, ID = -2.0A V VGS = 0V, ID = -3.1A -- -- nA -5.0 1. Part Number IRHNM597110, IRHNM593110 and additional part numbers listed on page 10. International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area LET 2 (MeV/(mg/cm )) Energy Range (MeV) (m) VDS (V) @VGS = @VGS = @VGS = @VGS = 0V 5V 10V 15V @VGS = 20V 270 7.5% 35 7.5% -100 -100 -100 -100 -100 61 5% 330 7.5% 30 7.5% -100 -100 -100 -100 -25 84 5% 350 7.5% 28 7.5% -100 -100 -100 -30 - Bias VDS (V) 38 5% -120 -100 -80 -60 -40 -20 0 LET=38 5% LET=61 5% LET=84 5% 0 5 10 15 20 Bias VGS (V) Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 Pre-Irradiation IRHNM597110, JANSR2N7506U8 100 VGS TOP -15V -12V -10V -8.0V -6.0V -5.0V -4.5V BOTTOM -4.0V 10 TOP -4.0V 1 20s PULSE WIDTH Tj = 25C -I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) 100 0.1 10 BOTTOM 20s PULSE WIDTH Tj = 150C 1 10 100 0.1 -VDS , Drain-to-Source Voltage (V) 1 10 100 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D, Drain-to-Source Current (A) -4.0V 1 0.1 0.1 T J = 25C 10 T J = 150C VDS = -50V 15 20s PULSE WIDTH 1 ID = -3.1A 2.0 1.5 1.0 0.5 VGS = -12V 0.0 4 6 8 10 12 14 -VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 VGS -15V -12V -10V -8.0V -6.0V -5.0V -4.5V -4.0V 16 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com IRHNM597110, JANSR2N7506U8 7 ID = -3.1A 6 5 T J = 150C 4 3 2 1 T J = 25C 0 4 6 8 10 12 14 4 RDS(on), Drain-to -Source On Resistance ( ) RDS(on), Drain-to -Source On Resistance ( ) Pre-Irradiation T J = 150C 3 2 T J = 25C 1 Vgs = -12V 0 16 0 2 -VGS, Gate -to -Source Voltage (V) Fig 5. Typical On-Resistance Vs Gate Voltage 6 Fig 6. Typical On-Resistance Vs Drain Current 150 4 ID = -1.0mA -VGS(th) Gate threshold Voltage (V) -V (BR)DSS , Drain-to-Source Breakdown Voltage (V) 4 -I D, Drain Current (A) 140 130 120 110 3 2 1 ID = -50A ID = -250A ID = -1.0mA ID = -150mA 0 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Temperature ( C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature www.irf.com -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Temperature ( C ) Fig 8. Typical Threshold Voltage Vs Temperature 5 Pre-Irradiation IRHNM597110, JANSR2N7506U8 600 20 VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd -VGS, Gate-to-Source Voltage (V) 500 C, Capacitance (pF) C oss = C ds + C gd 400 Ciss 300 Coss 200 100 Crss 0 VDS= -80V VDS= -50V VDS= -20V ID = -3.1A 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 17 0 1 10 0 100 2 4 6 8 10 12 QG, Total Gate Charge (nC) -VDS, Drain-to-Source Voltage (V) Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage 3.5 100 -I SD , Reverse Drain Current (A) 3 -ID, Drain Current (A) 10 1 T J = 150C T J = 25C 0.1 2 1.5 1 0.5 VGS = 0V 0.01 0 0 1 2 3 4 5 -V SD , Source-to-Drain Voltage (V) Fig 11. Typical Source-Drain Diode Forward Voltage 6 2.5 6 25 50 75 100 125 150 T C , Case Temperature (C) Fig 12. Maximum Drain Current Vs. Case Temperature www.irf.com Pre-Irradiation IRHNM597110, JANSR2N7506U8 50 EAS , Single Pulse Avalanche Energy (mJ) -I D, Drain-to-Source Current (A) 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 100s 1 1ms Tc = 25C Tj = 150C Single Pulse 0.1 1 10ms DC 10 100 1000 -VDS , Drain-to-Source Voltage (V) ID TOP -1.4A -2.0A BOTTOM -3.1A 40 30 20 10 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy Vs. Drain Current Thermal Response ( Z thJC ) 10 D = 0.50 0.20 0.10 1 P DM 0.05 0.02 0.01 t1 SINGLE PULSE ( THERMAL RESPONSE ) t2 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.1 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 7 Pre-Irradiation IRHNM597110, JANSR2N7506U8 I AS L VDS - D.U.T RG + IAS VGS -20V tp VVDD DD A DRIVER 0.01 tp 15V V(BR)DSS Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG -12 V QGS 50K -12V 12V .2F .3F QGD +VDS D.U.T. VGS VG -3mA IG Charge Fig 17a. Basic Gate Charge Waveform V DS VGS RG Fig 17b. Gate Charge Test Circuit RD td(on) tr t d(off) tf VGS D.U.T. 10% - + VGS Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit 8 ID Current Sampling Resistors V DD 90% VDS Fig 18b. Switching Time Waveforms www.irf.com Pre-Irradiation IRHNM597110, JANSR2N7506U8 Case Outline and Dimensions -- SMD-0.2 ( Metal Lid) NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. PAD ASSIGNMENT 1 = DRAIN 2 = GATE 3 = SOURCE Case Outline and Dimensions -- SMD-0.2 (Ceramic Lid) NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. www.irf.com PAD ASSIGNMENT 1 = DRAIN 2 = GATE 3 = SOURCE 9 Pre-Irradiation IRHNM597110, JANSR2N7506U8 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = -50V, starting TJ = 25C, L=5.8mH Peak IL = -3.1A, VGS = -12V ISD -3.1A, di/dt -544A/s, VDD -100V, TJ 150C Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Additional Product Summary (continued from page 1 and 3) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNMC597110 100K Rads (Si) 1.2 -3.1A JANSR2N7506U8C IRHNMC593110 300K Rads (Si) 1.2 -3.1A JANSF2N7506U8C SMD-0.2 ( CERAMIC LID ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 09/2010 10 www.irf.com