PM75B6L1C060 - Mitsubishi Electric

1

MITSUBISHI <INTELLIGENT POWER MODULES>

PM75B6L1C060

FLAT-BASE TYPE

INSULATED PACKAGE

Jan. 2011

PM75B6L1C060

FEATURE

a) Adopting new 5th generation Full-Gate

CSTBTTM chip

b) Error output signal is possible from all

each protection upper and lower IGBT

c) The mounting surface is 90mm×50mm

about 30% less than B6LA type

• Monolithic gate drive & protection logic

• Detection, protection & status indication

circuits for, short-circuit, over-temperature

& under-voltage

APPLICATION

Photo voltaic power conditioner

PACKAGE OUTLINES Dimensions in mm

1. VUPC

2. UFo

3. UP

4. VUP1

5. VVPC

6. VFo

7. VP

8. VVP1

9. NC

10. NC

11. NC

12. NC

13. VNC

14. VN1

15. Br

16. UN

17. VN

18. WN

19. Fo

Terminal code

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2

MITSUBISHI <INTELLIGENT POWER MODULES>

PM75B6L1C060

FLAT-BASE TYPE

INSULATED PACKAGE

Jan. 2011

INTERNAL FUNCTIONS BLOCK DIAGRAM

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)

INVERTER PART

Symbol Parameter Conditions Ratings Unit

VCES Collector-Emitter Voltage VD=15V, VCIN=15V 600 V

IC T

C=25°C 75

ICRM Collector Current Pulse 150

A

Ptot Total Power Dissipation TC=25°C 201 W

IE Emitter Current TC=25°C 75

IERM (Free wheeling Diode Forward current) Pulse 150

A

Tj Junction Temperature -20 ~ +150 °C

*: Tc measurement point is just under the chip.

CONVERTER PART

Symbol Parameter Conditions Ratings Unit

VCES Collector-Emitter Voltage VD=15V, VCIN=15V 600 V

IC T

C=25°C 75

ICRM Collector Current Pulse 150

A

Ptot Total Power Dissipation TC=25°C 201 W

IE Emitter Current TC=25°C 75

IERM (Free wheeling Diode Forward current) Pulse 150

A

IF Di Forward Current TC=25°C 75 A

VR(DC) Di Rated DC Reverse Voltage TC=25°C 600 V

Tj Junction Temperature -20 ~ +150 °C

*: Tc measurement point is just under the chip.

VccFoINGND

GND SC OT OUT

VccFoINGND

GND SC OT OUT

VccFoINGND

GND SC OT OUT

VccFoINGND

GND SC OT OUT

VccFoINGND

GND SC OT OUT

VccFoINGND

GND SC OT OUT

1.5k

Br Fo VNC WNVN1 VNUNNC NC NC NC VVPC VUPC

VPUP

VVP1 VUP1

VFo UFo

1.5k 1.5k

PUVWNB

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3

MITSUBISHI <INTELLIGENT POWER MODULES>

PM75B6L1C060

FLAT-BASE TYPE

INSULATED PACKAGE

Jan. 2011

CONTROL PART

Symbol Parameter Conditions Ratings Unit

VD Supply Voltage Applied between : VUP1-VUPC, VVP1-VVPC,VN1-VNC 20 V

VCIN Input Voltage Applied between : UP-VUPC, VP-VVPC,

UN･VN･WN･Br-VNC 20 V

VFO Fault Output Supply Voltage Applied between : UFo-VUPC, VFo-VVPC, Fo-VNC 20 V

IFO Fault Output Current Sink current at UFo, VFo, Fo terminals 20 mA

TOTAL SYSTEM

Symbol Parameter Conditions Ratings Unit

VCC(PROT) Supply Voltage Protected by

SC

VD =13.5V ~ 16.5V

Inverter Part, Tj =+125°C Start 450 V

VCC(surge) Supply Voltage (Surge) Applied between : P-N, Surge value 500 V

Tstg Storage Temperature -40 ~ +125 °C

Visol Isolation Voltage 60Hz, Sinusoidal, RMS, Charged part to Base, AC 1min. 2500 V

*: TC measurement point is just under the chip.

THERMAL RESISTANCE

Limits

Symbol Parameter Conditions Min. Typ. Max. Unit

Rth(j-c)Q Inverter, IGBT (per 1 element) (Note.1) - - 0.62

Rth(j-c)D Inverter, FWDi (per 1 element) (Note.1) - - 1.06

Rth(j-c)Q Converter, IGBT (per 1 element) (Note.1) - - 0.62

Rth(j-c)D Converter, FWDi (per 1 element) (Note.1) - - 1.06

Rth(j-c)D

Thermal Resistance

Converter, Di (per 1 element) (Note.1) - - 1.06

Rth(c-s) Contact Thermal Resistance

Case to heat sink, (per 1 module)

Thermal grease applied (Note.1) - 0.06 -

K/W

Note.1: If you use this value, Rth(s-a) should be measured just under the chips.

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MITSUBISHI <INTELLIGENT POWER MODULES>

PM75B6L1C060

FLAT-BASE TYPE

INSULATED PACKAGE

Jan. 2011

ELECTRICAL CH ARACTERISTICS (Tj = 25°C, unless otherwise noted)

INVERTER PART

Limits

Symbol Parameter Conditions Min. Typ. Max. Unit

Tj=25°C - 2.2 2.7

VCEsat Collector-Emitter Saturation

Voltage

VD=15V, IC=75A

VCIN=0V, Pulsed (Fig. 1) Tj=125°C - 2.2 2.7

V

VEC Emitter-Collector Voltage IE=75A, VD=15V, VCIN= 15V (Fig. 2) - 2.4 3.3

V

ton 0.1 0.5 1.2

trr - 0.1 0.2

tc(on) - 0.15 0.3

toff - 1.1 2.0

tc(off)

Switching Time

VD=15V, VCIN=0V←→15V

VCC=300V, IC=75A

Tj=125°C

Inductive Load (Fig. 3,4)

- 0.2 0.4

μs

Tj=25°C - - 1

ICES Collector-Emitter Cut-off

Current VCE=VCES, VD=15V , VCIN=15V (Fig. 5) Tj=125°C - - 10

mA

CONVERTER PART

Limits

Symbol Parameter Conditions Min. Typ. Max. Unit

Tj=25°C - 2.2 2.7

VCEsat Collector-Emitter Saturation

Voltage

VD=15V, IC=75A

VCIN=0V, Pulsed (Fig. 1) Tj=125°C - 2.2 2.7

V

VEC Emitter-Collector Voltage IE=75A, VD=15V, VCIN= 15V (Fig. 2) - 2.4 3.3

V

VFM Di Forward Voltage IF=75A - 2.4 3.3

V

ton 0.1 0.5 1.2

trr - 0.1 0.2

tc(on) - 0.15 0.3

toff - 1.1 2.0

tc(off)

Switching Time

VD=15V, VCIN=0V←→15V

VCC=300V, IC=75A

Tj=125°C

Inductive Load (Fig. 3,4)

- 0.2 0.4

μs

Tj=25°C - - 1

ICES Collector-Emitter Cut-off

Current VCE=VCES, VD=15V , VCIN=15V (Fig. 5) Tj=125°C - - 10

mA

CONTROL PART

Limits

Symbol Parameter Conditions Min. Typ. Max. Unit

VN1-VNC - 6.5 12

ID Circuit Current VD=15V, VCIN=15V V*P1-V*PC - 1.6 4.0

mA

Vth(ON) Input ON Threshold Voltage 1.2 1.5 1.8

Vth(OFF) Input OFF Threshold Voltage

Applied between :

UP-VUPC, VP-VVPC,

UN･VN･WN･Br -VNC 1.7 2.0 2.3 V

SC Short Circuit Trip Level -20≤Tj≤125°C, VD=15V (Fig. 3, 6) 112 - - A

toff(SC) Short Circuit Current Delay

Time VD=15V (Fig. 3, 6) - 0.2 - μs

OT Trip level 135 - -

OT(hys) Over Temperature Protection Detect Temperature of IGBT chip Hysteresis - 20 -

°C

UVt Trip level 11.5 12.0 12.5

UVr

Supply Circuit Under-Voltage

Protection -20≤Tj≤125°C Reset level - 12.5 - V

IFO(H) - - 0.01

IFO(L) Fault Output Current VD=15V, VFO=15V (Note.2) - 10 15

mA

tFO Fault Output Pulse Width VD=15V (Note.2) 1.0 1.8 - ms

Note.2: Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it.

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MITSUBISHI <INTELLIGENT POWER MODULES>

PM75B6L1C060

FLAT-BASE TYPE

INSULATED PACKAGE

Jan. 2011

MECHANICAL RATINGS AND CHARACTERISTICS

Limits

Symbol Parameter Conditions Min. Typ. Max. Unit

Mt Mounting Torque Mounting part screw : M4 1.4 1.65 1.9 N・m

m Weight - - 135 - g

RECOMMENDED CONDITIONS FOR USE

Symbol Parameter Conditions Recommended value Unit

VCC Supply Voltage Applied across P-N terminals ≤ 450 V

VD Control Supply Voltage Applied between :

VUP1-VUPC,

VVP1-VVPC,VN1-VNC (Note.3) 15.0±1.5 V

VCIN(ON) Input ON Voltage ≤ 0.8

VCIN(OFF) Input OFF Voltage

Applied between :

UP-VUPC, VP-VVPC,

UN･VN･WN･Br -VNC ≥ 9.0 V

fPWM PWM Input Frequency Using Application Circuit of Fig. 8 ≤ 20 kHz

tdead Arm Shoot-through Blocking

Time

For IPM’s each input signals (Fig. 7) ≥ 2.0 μs

IO Module Operating Current RMS ≤ 30 A

Note.3: With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/μs, Variation ≤ 2V peak to peak

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MITSUBISHI <INTELLIGENT POWER MODULES>

PM75B6L1C060

FLAT-BASE TYPE

INSULATED PACKAGE

Jan. 2011

PRECAUTIONS FOR TESTING

1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their

corresponding supply voltage and each input signal should be kept off state.

After this, the specified ON and OFF level setting for each input signal should be done.

2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be

allowed to rise above VCES rating of the device.

(These test should not be done by using a curve tracer or its equivalent.)

Fig. 1 VCEsat Te s t

Fig. 2 VEC, VFM Test

Fig. 3 Switching time and SC test circuit

Fig. 4 Switching time test waveform

Fig. 5 ICES Tes t

Fig. 6 SC test waveform

Ic

Vcc

GND

Fo

IN

U,V,(N)

P,(U,V,W,B)

V

VD(all) Fo

Vcin

P,(U,V,W,B)

V IE , IF

Fo

Vcin

Vcc

GND

Fo

IN

VD(all)

U,V,W,B,(N)

U,V,W,B

P

VD(all)

N

Ic

Vcc

Fo

Vcin

Vcc

GND

Fo

IN

Fo

Vcin

Vcc

GND

Fo

IN

VD(all)

U,V

P

VD(all)

N

Ic

Vcc

Fo

Vcin

Vcc

GND

Fo

IN

Fo

Vcin

Vcc

GND

Fo

IN

VD(all)

VCE

A

pu lse

Fo

Vcin

Vcc

GND

Fo

IN

VD(all)

P,(U,V,W,B)

U,V,W,B,(N)

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MITSUBISHI <INTELLIGENT POWER MODULES>

PM75B6L1C060

FLAT-BASE TYPE

INSULATED PACKAGE

Jan. 2011

Fig. 7 Dead time measurement point example

Fig. 8 Application Example Circuit

NOTES FOR STABLE AND S AFE OPERAT ION ;

• Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the

stray capacity between the input and output wirings of opto-coupler.

• Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.

• Fast switching opto-couplers: tPLH, tPHL ≤ 0.8μs, Use High CMR type.

• Slow switching opto-coupler: CTR > 100%

• Use 3 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the

power supply.

• Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N

terminal.

Vcc

Fo

IN

GND GND

OUT

OT

SC

Vcc

Fo

IN

GND GND

OUT

OT

SC

Vcc

Fo

IN

GND GND

OUT

OT

SC

Vcc

Fo

IN

GND GND

OUT

OT

SC

Vcc

Fo

IN

GND GND

OUT

OT

SC

Vcc

Fo

IN

GND GND

OUT

OT

SC

Fo

Br

V

NC

V

N1

V

VPC

V

VP1

V

UPC

V

UP1

U

Fo

U

P

V

Fo

V

P

U

N

V

N

W

N

P

U

V

W

N

B

A

C Output

1.5k

NC

VD1

VD2

VD3

20k

≥10µ

≥0.1µ

20k

≥10µ

≥0.1µ

20k

≥10µ

≥0. 1µ

20k

≥10µ

≥0.1µ

20k

≥10µ

≥0.1µ

20k

≥10µ

≥0.1µ

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MITSUBISHI <INTELLIGENT POWER MODULES>

PM75B6L1C060

FLAT-BASE TYPE

INSULATED PACKAGE

Jan. 2011

PERFORMANCE CURVES

OUTPUT CHARACTERISTICS

(TYPICAL)

INVERTER PART & CONVERTER PART

COLLECTOR-EMITTER SATURATION

VOLTAGE (VS. Ic) CHARACTERISTICS

(TYPICAL)

INVERTER PART & CONVERTER PART

COLLECTOR CURRENT IC (A)

0

10

20

30

40

50

60

70

80

0.5 1.0 1.5 2.0 2.5

COLLECTOR-EMITTER

SATURATION VOLTAGE VCEsat (V)

0.0

0.5

1.0

1.5

2.0

2.5

0 1020304050607080

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION

VOLTAGE (VS. VD) CHARACTERISTICS

(TYPICAL)

INVERTER PART & CONVERTER PART

FREE WHEELING DIODE & DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

INVERTER PART & CONVERTER PART

COLLECTO R-EMITTER

SATURATION VOLTAGE VCEsat (V)

1.0

1.5

2.0

2.5

12 13 14 15 16 17 18

EMITTER CURRENT IE (A)

Di FORWARD CURRENT IF (A)

0

10

20

30

40

50

60

70

80

00.511.522.5

CONTROL VOLTAGE VD (V) EMITTER-COLLECTOR VOLTAGE VEC (V)

Di FORWARD VOLTAGE VFM (V)

Tj=25°C

VD=17V

VD=15V

VD=13V

VD=15V

Tj=25°C

Tj=125°C

Ic=75A

Tj=25°C

T

j

=125°C

VD=15V

Tj=25°C

T

j

=125°C

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MITSUBISHI <INTELLIGENT POWER MODULES>

PM75B6L1C060

FLAT-BASE TYPE

INSULATED PACKAGE

Jan. 2011

SWITCHING TIME (ton, toff) CHARACTERISTICS

(TYPICAL)

INVERTER PART & CONVERTER PART

SWITCHING TIME (t

c(on)

, t

c(off)

) CHARACTERISTICS

(TYPICAL)

INVERTER PART & CONVERTER PART

SWITCHING TIME ton, toff (μs)

0.1

1

10

1 10 100

SWITCHING TIME tc(on), tc(off) (μs)

0.01

0.1

1

110100

COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)

SWITCHING ENERGY CHARACTERISTICS

(TYPICAL)

INVERTER PART

SWITCHING ENERGY CHARACTERISTICS

(TYPICAL)

CONVERTER PART

SWITCHING ENERGY Eon, Eoff (mJ/pulse)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0 20406080

SWITCHING ENERGY Eon, Eoff (mJ/pulse)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0 20406080

COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)

Vcc=300V

VD=15V

Tj=25°C

Tj=125°C

Inductive Load

toff

ton

Vcc=300V

VD=15V

Tj=25°C

Tj=125°C

Inductive Load

tc(off)

tc(on)

Vcc=300V

VD=15V

Tj=25°C

Tj=125°C

Inductive Load

Eoff

Eon

Vcc=300V

VD=15V

Tj=25°C

Tj=125°C

Inductive Load

Eoff

Eon

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MITSUBISHI <INTELLIGENT POWER MODULES>

PM75B6L1C060

FLAT-BASE TYPE

INSULATED PACKAGE

Jan. 2011

FREE WHEELING DIODE

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

INVERTER PART

FREE WHEELING DIODE

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

CONVERTER PART

REVERSE RECOVERY TIME trr (μs)

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

0 20406080

10

20

30

40

50

60

70

80

REVERSE RECOVERY CURRENT Irr (A)

REVERSE RECOVERY TIME trr (μs)

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

0 20406080

10

15

20

25

30

35

40

45

REVERSE RECOVERY TIME trr (μs)

EMITTER CURRENT IE (A) EMITTER CURRENT IE (A)

FREE WHEELING DIODE

REVERSE RECOVERY ENERGY

CHARACTERISTICS

(TYPICAL)

INVERTER PART

FREE WHEELING DIODE

REVERSE RECOVERY ENERGY

CHARACTERISTICS

(TYPICAL)

CONVERTER PART

REVESE RECOVERY ENERGY Err (mJ/pulse)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0 20406080

REVESE RECOVERY ENERGY Err (mJ/pulse)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0 20406080

EMITTER CURRENT IE (A) EMITTER CURRENT IE (A)

Vcc=300V

VD=15V

Tj=25°C

Tj=125°C

Inductive Load

Vcc=300V

VD=15V

Tj=25°C

Tj=125°C

Inductive Load

Irr

trr

Vcc=300V

VD=15V

Tj=25°C

Tj=125°C

Inductive Load Irr

trr

Vcc=300V

VD=15V

Tj=25°C

Tj=125°C

Inductive Load

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MITSUBISHI <INTELLIGENT POWER MODULES>

PM75B6L1C060

FLAT-BASE TYPE

INSULATED PACKAGE

Jan. 2011

ID VS. fc CHARACTERISTICS

(TYPICAL)

UV TRIP LEVEL VS. Tj CHARACTERISTICS

(TYPICAL)

ID (mA)

0

5

10

15

20

25

30

35

40

45

50

0 5 10 15 20 25

UVt / UVr (V)

0

2

4

6

8

10

12

14

16

18

20

-50 0 50 100 150

fc (kHz) Tj (°C)

SC TRIP LEVEL VS. Tj CHARACTERISTICS

(TYPICAL)

INVERTER PART & CONVERTER PART

SC

(SC of Tj=25°C is normalized 1)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 0 50 100 150

Tj (°C)

VD=15V

Tj=25°C

T

j

=125°C

N side

P side

UVt

UVr

VD=15V

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MITSUBISHI <INTELLIGENT POWER MODULES>

PM75B6L1C060

FLAT-BASE TYPE

INSULATED PACKAGE

Jan. 2011

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

INVERTER PART

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

CONVERTER PART

NORMALIZED TRANSIENT

THERMAL IMPEDANCE Zth(j-c)

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

NORMALIZED TRANSIENT

THERMAL IMPEDANCE Zth(j-c)

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

TIME t (sec) TIME t (sec)

Single Pulse

IGBT Part;

Per unit base: Rth(j-c)Q=0.62 K/W

FWDi Part;

Per unit base: Rth(j-c)D=1.06K/W

Single Pulse

IGBT Part;

Per unit base: Rth(j-c)Q=0.62 K/W

FWDi Part;

Per unit base: Rth(j-c)D=1.06K/W

Di part

Per unit base: Rth(j-c)D=1.06K/W

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