1998. 10. 8 1/3
SEMICONDUCTOR
TECHNICAL DATA
BC546/7/8
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
ᴌHigh Voltage : BC546 VCEO=65V.
ᴌFor Complementary With PNP Type BC556/557/558.
MAXIMUM RATING (Ta=25ᴱ)
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. COLLECTOR
2. BASE
3. EMITTER
+
_
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base
Voltage
BC546
VCBO
80
VBC547 50
BC548 30
Collector-Emitter
Voltage
BC546
VCEO
65
VBC547 45
BC548 30
Emitter-Base
Voltage
BC546
VEBO
6
VBC547 6
BC548 5
Collector Current
BC546
IC
100
mABC547 100
BC548 100
Emitter Current
BC546
IE
-100
mABC547 -100
BC548 -100
Collector Power Dissipation PC625 mW
Junction Temperature Tj150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ
1998. 10. 8 2/3
BC546/7/8
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CLASSIFICATION none A B C
hFE
BC546 110ᴕ450 110ᴕ220 200ᴕ450 -
BC547 110ᴕ800 110ᴕ220 200ᴕ450 420ᴕ800
BC548 110ᴕ800 110ᴕ220 200ᴕ450 420ᴕ800
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=30V, IE=0 - - 15 nA
DC Current Gain (Note)
BC546
hFE VCE=5V, IC=2mA
110 - 450
BC547 110 - 800
BC548 110 - 800
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=5mA - - 0.6 V
Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=5mA - 0.9 1.1 V
Base-Emitter Voltage
VBE(ON)1 VCE=5V, IC=2mA 0.58 - 0.7 V
VBE(ON)2 VCE=5V, IC=10mA - - 0.75 V
Transition Frequency fTVCE=5V, IC=10mA, f=100MHz - 150 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - - 4.5 pF
Noise Figure NF
VCE=6V, IC=0.1mA
Rg=10kή, f=1kHz - 1.0 10 dB
NOTE : According to the value of hFE the BC546, BC547, BC548 are classified as follows.
1998. 10. 8 3/3
BC546/7/8
Revision No : 3
COLLECTOR CURRENT I (mA)
0
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CEC
I - V (LOW VOLTAGE REGION)
COLLECTOR POWER DISSIPATION
0
C
0
AMBIENT TEMPERATURE Ta ( C)
C
P - Ta
10
DC CURRENT GAIN hFE
310.30.1
COLLECTOR CURRENT I (mA)
C
h - I
f - I
C
COLLECTOR CURRENT I (mA)
0.1 0.3 1 3
T
TRANSITION FREQUENCY f (MHz)
10
BASE CURRENT I (µA)
B
0.3
0
BASE-EMITTER VOLTAGE V (V)
BE
I - V
1234567
40
80
120
160
200
240 COMMON EMITTER
Ta=25 C
6.0 5.0
3.0 2.0
1.0
0.5
I =0.2mA
B
0
FE C
10 30 100 300
30
50
100
300
500
1k COMMON EMITTER
Ta=100 C
Ta=25 C
Ta=-25 C
V =5V
V =1V
CE
CE
VOLTAGE V (V)
CE(sat)
0.01
310.30.1
COLLECTOR CURRENT I (mA)
C
V - I
CE(sat) C
COLLECTOR-EMITTER SATURATION
10 30 100 300
0.03
0.05
0.1
0.3
0.5
1
3
COMMON EMITTER
I /I =10
CB
Ta=100 C
Ta=25 C
Ta=-25 C
TC
10 30 100 300
30
50
100
300
500
1k
3k COMMON EMITTER
V =5V
Ta=25 C
CE
BBE
0.2 0.4 0.6 0.8 1.0 1.2
1
3
10
30
100
300
1k
3k COMMON
EMITTER
V =6V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
P (mW)
25 50 75 100 125 150 175
100
200
300
400
500
625
700
