SST39WF1602-70-4C-B3KE-T - Microchip Technology

Microchip Technology Company

Data Sheet

www.microchip.com

16 Mbit (x16) Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Features

• Organized as 1M x16

• Single Voltage Read and Write Operations

– 1.65-1.95V

• Superior Reliability

– Endurance: 100,000 Cycles (Typical)

– Greater than 100 years Data Retention

• Low Power Consumption (typical values at 5 MHz)

– Active Current: 5 mA (typical)

– Standby Current: 5 µA (typical)

– Auto Low Power Mode: 5 µA (typical)

• Hardware Block-Protection/WP# Input Pin

– Top Block-Protection (top 32 KWord)

for SST39WF1602

– Bottom Block-Protection (bottom 32 KWord)

for SST39WF1601

• Sector-Erase Capability

– Uniform 2 KWord sectors

• Block-Erase Capability

– Uniform 32 KWord blocks

• Chip-Erase Capability

• Erase-Suspend/Erase-Resume Capabilities

• Hardware Reset Pin (RST#)

• Security-ID Feature

– SST: 128 bits; User: 128 bits

• Fast Read Access Time:

–70ns

• Latched Address and Data

• Fast Erase and Word-Program:

– Sector-Erase Time: 36 ms (typical)

– Block-Erase Time: 36 ms (typical)

– Chip-Erase Time: 140 ms (typical)

– Word-Program Time: 28 µs (typical)

• Automatic Write Timing

– Internal VPP Generation

• End-of-Write Detection

– Toggle Bits

– Data# Polling

• CMOS I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pin Assignments and

Command Sets

• Packages Available

– 48-ball TFBGA (6mm x 8mm)

– 48-ball WFBGA (4mm x 6mm)

• All devices are RoHS compliant

The SST39WF1601 / SST39WF1602 are a 1M x16 CMOS Multi-Purpose Flash

Plus (MPF+) devices manufactured with SST proprietary, high-performance

CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunnel-

ing injector attain better reliability and manufacturability compared with alternate

approaches. The SST39WF1601 / SST39WF1602 write (Program or Erase) with

a 1.65-1.95V power supply. These devices conform to JEDEC standard pin

assignments for x16 memories.

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Product Description

The SST39WF1601/1602 devices are 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured

with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and

thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate

approaches. The SST39WF1601/1602 write (Program or Erase) with a 1.65-1.95V power supply.

These devices conform to JEDEC standard pin assignments for x16 memories.

Featuring high performance Word-Program, the SST39WF1601/1602 devices provide a typical Word-

Program time of 28 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion of

Program operation. To protect against inadvertent write, they have on-chip hardware and Software

Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications,

these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is

rated at greater than 100 years.

The SST39WF1601/1602 devices are suited for applications that require convenient and economical

updating of program, configuration, or data memory. For all system applications, they significantly

improve performance and reliability, while lowering power consumption. They inherently use less

energy during Erase and Program than alternative flash technologies. The total energy consumed is a

function of the applied voltage, current, and time of application. Since for any given voltage range, the

SuperFlash technology uses less current to program and has a shorter erase time, the total energy

consumed during any Erase or Program operation is less than alternative flash technologies. These

devices also improve flexibility while lowering the cost for program, data, and configuration storage

applications.

The SuperFlash technology provides fixed Erase and Program times, independent of the number of

Erase/Program cycles that have occurred. Therefore the system software or hardware does not have

to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro-

gram times increase with accumulated Erase/Program cycles.

To meet high density, surface mount requirements, the SST39WF1601/1602 are offered in both 48-ball

TFBGA and 48-ball WFBGA packages. See Figures 2 and 3 for pin assignments.

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Block Diagram

Figure 1: Functional Block Diagram

Y-Decoder

I/O Buffers and Data Latches

1297 B1.0

Address Buffer Latches

X-Decoder

DQ15 -DQ

Memory Address

OE#

CE#

WE#

SuperFlash

Memory

Control Logic

WP#

RESET#

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Block Diagram

Figure 2: Pin assignments for 48-ball TFBGA

Figure 3: Pin assignments for 48-ball WFBGA

A13

WE#

A12

RST#

WP#

A17

A14

A10

A18

A15

A11

A19

A16

DQ7

DQ5

DQ2

DQ0

DQ14

DQ12

DQ10

DQ8

CE#

DQ15

DQ13

VDD

DQ11

DQ9

OE#

VSS

DQ6

DQ4

DQ3

DQ1

VSS

1297 48-tfbga B3K P1.1

TOP VIEW (balls facing down)

ABCDEFGH

CE#

VSS

DQ8

OE#

DQ0

A18

DQ10

DQ9

DQ1

A17

WP#

A19

DQ2

DQ3

VDD

WE#

DQ12

RST#

DQ13

A10

DQ4

DQ5

DQ14

A11

A13

A12

DQ11

DQ6

DQ15

A14

A15

A16

DQ7

VSS

TOP VIEW (balls facing down)

AB C D E F G H J K L

1297 48-wfbga MBQ P02.0

SST39WF160x

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Table 1: Pin Description

Symbol Pin Name Functions

AMS1-A0Address Inputs To provide memory addresses.

During Sector-Erase AMS-A11 address lines will select the sector.

During Block-Erase AMS-A15 address lines will select the block.

DQ15-DQ0Data Input/output To output data during Read cycles and receive input data during Write cycles.

Data is internally latched during a Write cycle.

The outputs are in tri-state when OE# or CE# is high.

WP# Write Protect To protect the top/bottom boot block from Erase/Program operation when

grounded.

RST# Reset To reset and return the device to Read mode.

CE# Chip Enable To activate the device when CE# is low.

OE# Output Enable To gate the data output buffers.

WE# Write Enable To control the Write operations.

VDD Power Supply To provide power supply voltage: 1.65-1.95V

VSS Ground

NC No Connection Unconnected pins.

T1.0 25014

1. AMS = Most significant address

AMS =A

19 for SST39WF1601/1602

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Device Operation

Commands are used to initiate the memory operation functions of the device. Commands are written

to the device using standard microprocessor write sequences. A command is written by asserting WE#

low while keeping CE# low. The address bus is latched on the falling edge of WE# or CE#, whichever

occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first.

The SST39WF1601/1602 also have the Auto Low Power mode which puts the device in a near

standby mode after data has been accessed with a valid Read operation. This reduces the IDD active

read current from typically 9 mA to typically 5 µA. The Auto Low Power mode reduces the typical IDD

active read current to the range of 2 mA/MHz of Read cycle time. The device exits the Auto Low Power

mode with any address transition or control signal transition used to initiate another Read cycle, with

no access time penalty. Note that the device does not enter Auto-Low Power mode after power-up with

CE# held steadily low, until the first address transition or CE# is driven high.

Read

The Read operation of the SST39WF1601/1602 is controlled by CE# and OE#, both have to be low for

the system to obtain data from the outputs. CE# is used for device selection. When CE# is high, the

chip is deselected and only standby power is consumed. OE# is the output control and is used to gate

data from the output pins. The data bus is in high impedance state when either CE# or OE# is high.

Refer to the Read cycle timing diagram for further details (Figure 4).

Word-Program Operation

The SST39WF1601/1602 are programmed on a word-by-word basis. Before programming, the sector

where the word exists must be fully erased. The Program operation is accomplished in three steps.

The first step is the three-byte load sequence for Software Data Protection. The second step is to load

word address and word data. During the Word-Program operation, the addresses are latched on the

falling edge of either CE# or WE#, whichever occurs last. The data is latched on the rising edge of

either CE# or WE#, whichever occurs first. The third step is the internal Program operation which is ini-

tiated after the rising edge of the fourth WE# or CE#, whichever occurs first. The Program operation,

once initiated, will be completed within 40 µs. See Figures 5 and 6 for WE# and CE# controlled Pro-

gram operation timing diagrams and Figure 20 for flowcharts. During the Program operation, the only

valid reads are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to

perform additional tasks. Any commands issued during the internal Program operation are ignored.

During the command sequence, WP# should be statically held high or low.

Sector/Block-Erase Operation

The Sector- (or Block-) Erase operation allows the system to erase the device on a sector-by-sector (or

block-by-block) basis. The SST39WF1601/1602 offer both Sector-Erase and Block-Erase modes. The

sector architecture is based on uniform sector size of 2 KWord. The Block-Erase mode is based on

uniform block size of 32 KWord. The Sector-Erase operation is initiated by executing a six-byte com-

mand sequence with Sector-Erase command (30H) and sector address (SA) in the last bus cycle. The

Block-Erase operation is initiated by executing a six-byte command sequence with Block-Erase com-

mand (50H) and block address (BA) in the last bus cycle. The sector or block address is latched on the

falling edge of the sixth WE# pulse, while the command (30H or 50H) is latched on the rising edge of

the sixth WE# pulse. The internal Erase operation begins after the sixth WE# pulse. The End-of-Erase

operation can be determined using either Data# Polling or Toggle Bit methods. See Figures 10 and 11

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

for timing waveforms and Figure 24 for the flowchart. Any commands issued during the Sector- or

Block-Erase operation are ignored. When WP# is low, any attempt to Sector- (Block-) Erase the pro-

tected block will be ignored. During the command sequence, WP# should be statically held high or low.

Erase-Suspend/Erase-Resume Commands

The Erase-Suspend operation temporarily suspends a Sector- or Block-Erase operation thus allowing

data to be read from any memory location, or program data into any sector/block that is not suspended

for an Erase operation. The operation is executed by issuing one byte command sequence with Erase-

Suspend command (B0H). The device automatically enters read mode typically within 20 µs after the

Erase-Suspend command had been issued. Valid data can be read from any sector or block that is not

suspended from an Erase operation. Reading at address location within erase-suspended sectors/

blocks will output DQ2toggling and DQ6at “1”. While in Erase-Suspend mode, a Word-Program oper-

ation is allowed except for the sector or block selected for Erase-Suspend.

To resume Sector-Erase or Block-Erase operation which has been suspended the system must issue

Erase Resume command. The operation is executed by issuing one byte command sequence with

Erase Resume command (30H) at any address in the last Byte sequence.

Chip-Erase Operation

The SST39WF1601/1602 provide a Chip-Erase operation, which allows the user to erase the entire

memory array to the “1” state. This is useful when the entire device must be quickly erased.

The Chip-Erase operation is initiated by executing a six-byte command sequence with Chip-Erase

command (10H) at address 5555H in the last byte sequence. The Erase operation begins with the ris-

ing edge of the sixth WE# or CE#, whichever occurs first. During the Erase operation, the only valid

read is Toggle Bit or Data# Polling. See Table 6 for the command sequence, Figure 10 for timing dia-

gram, and Figure 24 for the flowchart. Any commands issued during the Chip-Erase operation are

ignored. When WP# is low, any attempt to Chip-Erase will be ignored. During the command sequence,

WP# should be statically held high or low.

Write Operation Status Detection

The SST39WF1601/1602 provide two software means to detect the completion of a Write (Program or

Erase) cycle, in order to optimize the system write cycle time. The software detection includes two sta-

tus bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The End-of-Write detection mode is enabled after

the rising edge of WE#, which initiates the internal Program or Erase operation.

The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a

Data# Polling or Toggle Bit read may be simultaneous with the completion of the write cycle. If this

occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with

either DQ7or DQ6. In order to prevent spurious rejection, if an erroneous result occurs, the software

routine should include a loop to read the accessed location an additional two (2) times. If both reads

are valid, then the device has completed the Write cycle, otherwise the rejection is valid.

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Data# Polling (DQ7)

When the SST39WF1601/1602 are in the internal Program operation, any attempt to read DQ7will

produce the complement of the true data. Once the Program operation is completed, DQ7will produce

true data. Note that even though DQ7may have valid data immediately following the completion of an internal

Write operation, the remaining data outputs may still be invalid: valid data on the entire data bus will appear in

subsequent successive Read cycles after an interval of 1 µs. During internal Erase operation, any attempt

to read DQ7will produce a ‘0’. Once the internal Erase operation is completed, DQ7will produce a ‘1’.

The Data# Polling is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For

Sector-, Block- or Chip-Erase, the Data# Polling is valid after the rising edge of sixth WE# (or CE#)

pulse. See Figure 7 for Data# Polling timing diagram and Figure 21 for a flowchart.

Toggle Bits (DQ6 and DQ2)

During the internal Program or Erase operation, any consecutive attempts to read DQ6will produce

alternating “1”s and “0”s, i.e., toggling between 1 and 0. When the internal Program or Erase operation

is completed, the DQ6bit will stop toggling. The device is then ready for the next operation. For Sector-

, Block-, or Chip-Erase, the toggle bit (DQ6) is valid after the rising edge of sixth WE# (or CE#) pulse.

DQ6will be set to “1” if a Read operation is attempted on an Erase-Suspended Sector/Block. If Pro-

gram operation is initiated in a sector/block not selected in Erase-Suspend mode, DQ6will toggle.

An additional Toggle Bit is available on DQ2, which can be used in conjunction with DQ6to check

whether a particular sector is being actively erased or erase-suspended. Table 2 shows detailed status

bits information. The Toggle Bit (DQ2) is valid after the rising edge of the last WE# (or CE#) pulse of

Write operation. See Figure 8 for Toggle Bit timing diagram and Figure 21 for a flowchart.

Note: DQ7and DQ2require a valid address when reading status information.

Table 2: Write Operation Status

Status DQ7DQ6DQ2

Normal Operation Standard Program DQ7# Toggle No Toggle

Standard Erase 0 Toggle Toggle

Erase-Suspend

Mode

Read from Erase-Suspended Sector/Block 1 1 Toggle

Read from Non- Erase-Suspended Sector/Block Data Data Data

Program DQ7# Toggle N/A

T2.0 25014

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Data Protection

The SST39WF1601/1602 provide both hardware and software features to protect nonvolatile data from

inadvertent writes.

Hardware Data Protection

Noise/Glitch Protection: A WE# or CE# pulse of less than 5 ns will not initiate a write cycle.

VDD Power Up/Down Detection: The Write operation is inhibited when VDD is less than 1.5V.

Write Inhibit Mode: Forcing OE# low, CE# high, or WE# high will inhibit the Write operation. This pre-

vents inadvertent writes during power-up or power-down.

Hardware Block Protection

The SST39WF1602 support top hardware block protection, which protects the top 32 KWord block of

the device. The SST39WF1601 support bottom hardware block protection, which protects the bottom

32 KWord block of the device. The Boot Block address ranges are described in Table 3. Program and

Erase operations are prevented on the 32 KWord when WP# is low. If WP# is left floating, it is internally

held high via a pull-up resistor, and the Boot Block is unprotected, enabling Program and Erase opera-

tions on that block.

Hardware Reset (RST#)

The RST# pin provides a hardware method of resetting the device to read array data. When the RST#

pin is held low for at least TRP, any in-progress operation will terminate and return to Read mode. When

no internal Program/Erase operation is in progress, a minimum period of TRHR is required after RST#

is driven high before a valid Read can take place (see Figure 16).

The Erase or Program operation that has been interrupted needs to be reinitiated after the device

resumes normal operation mode to ensure data integrity.

Software Data Protection (SDP)

The SST39WF1601/1602 provide the JEDEC approved Software Data Protection scheme for all data

alteration operations, i.e., Program and Erase. Any Program operation requires the inclusion of the

three-byte sequence. The three-byte load sequence is used to initiate the Program operation, provid-

ing optimal protection from inadvertent Write operations, e.g., during the system power-up or power-

down. Any Erase operation requires the inclusion of six-byte sequence. These devices are shipped

with the Software Data Protection permanently enabled. See Table 6 for the specific software com-

mand codes. During SDP command sequence, invalid commands will abort the device to read mode

within TRC. The contents of DQ15-DQ8can be VIL or VIH, but no other value, during any SDP command

sequence.

Table 3: Boot Block Address Ranges

Product Address Range

Bottom Boot Block

SST39WF1601 000000H-007FFFH

Top Boot Block

SST39WF1602 0F8000H-0FFFFFH

T3.0 25014

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Common Flash Memory Interface (CFI)

The SST39WF1601/1602 contain the CFI information to describe the characteristics of the device. The

SST39WF1601/1602 support the original SST CFI Query mode implementation for compatibility with

existing SST devices as well as the general CFI Query mode. Both will be explained in subsequent

paragraphs.

In order to enter the SST CFI Query mode, the system must write the three-byte sequence, same as

the product ID entry command with 98H (CFI Query command) to address 5555H in the last byte

sequence. Once the device enters CFI Query mode, the system can read CFI data at the addresses

given in Tables 7 through 9. The system must write the CFI Exit command to return to Read mode from

the CFI Query mode.

In order to enter the general CFI Query mode, the system must write a one-byte sequence with entry

command with 98H to address 55H. Once the device enters the CFI Query mode, the system can read

CFI data at the addresses given in Tables 7 through 9. The system must write the CFI Exit command to

return to Read mode from the CFI Query mode.

Product Identification

The Product Identification mode identifies the devices as the SST39WF1601, SST39WF1602 and

manufacturer as SST. This mode may be accessed software operations. Users may use the Software

Product Identification operation to identify the part (i.e., using the device ID) when using multiple man-

ufacturers in the same socket. For details, see Table 6 for software operation, Figure 12 for the Soft-

ware ID Entry and Read timing diagram and Figure 22 for the Software ID Entry command sequence

flowchart.

Product Identification Mode Exit/CFI Mode Exit

In order to return to the standard Read mode, the Software Product Identification mode must be exited.

Exit is accomplished by issuing the Software ID Exit command sequence, which returns the device to

the Read mode. This command may also be used to reset the device to the Read mode after any inad-

vertent transient condition that apparently causes the device to behave abnormally, e.g., not read cor-

rectly. Please note that the Software ID Exit/CFI Exit command is ignored during an internal Program

or Erase operation. See Table 6 for software command codes, Figure 14 for timing waveform, and Fig-

ures 22 and 23 for flowcharts.

Table 4: Product Identification

Address Data

Manufacturer’s ID 0000H BFH

Device ID

SST39WF1601 0001H BF274B

SST39WF1602 0001H BF274A

T4.0 25014

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Security ID

The SST39WF1601/1602 devices offer a 256-bit Security ID space. The Secure ID space is divided

into two 128-bit segments - one factory programmed segment and one user programmed segment.

The first segment is programmed and locked at SST with a random 128-bit number. The user segment

is left un-programmed for the customer to program as desired.

To program the user segment of the Security ID, the user must use the Security ID Word-Program

command. To detect end-of-write for the SEC ID, read the toggle bits. Do not use Data# Polling. Once

this is complete, the Sec ID should be locked using the User Sec ID Program Lock-Out. This disables

any future corruption of this space. Note that regardless of whether or not the Sec ID is locked, neither

Sec ID segment can be erased.

The Secure ID space can be queried by executing a three-byte command sequence with Enter Sec ID

command (88H) at address 5555H in the last byte sequence. To exit this mode, the Exit Sec ID com-

mand should be executed. Refer to Table 6 for more details.

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Operations

Table 5: Operation Modes Selection

Mode CE# OE# WE# DQ Address

Read VIL VIL VIH DOUT AIN

Program VIL VIH VIL DIN AIN

Erase VIL VIH VIL X1

1. X can be VIL or VIH, but no other value.

Sector or block address,

XXH for Chip-Erase

Standby VIH X X High Z X

Write Inhibit X VIL X High Z/ DOUT X

XXV

IH High Z/ DOUT X

Product Identification

Software Mode VIL VIL VIH See Table 6

T5.0 25014

Table 6: Software Command Sequence

Command

Sequence

1st Bus

Write Cycle

2nd Bus

Write Cycle

3rd Bus

Write Cycle

4th Bus

Write Cycle

5th Bus

Write Cycle

6th Bus

Write Cycle

Addr

1. Address format A14-A0(Hex).

Addresses A15-A19 can be VIL or VIH, but no other value, for Command sequence for SST39WF1601/1602.

Data

2. DQ15-DQ8can be VIL or VIH, but no other value, for Command sequence

Addr

Data

Addr

Data

Addr

Data

Addr

Data

Addr

Data

Word-Program

5555H AAH 2AAAH 55H 5555H A0H WA3

3. WA = Program Word address

Data

Sector-Erase

5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H SAX4

4. SAXfor Sector-Erase; uses AMS-A11 address lines

BAX, for Block-Erase; uses AMS-A15 address lines

AMS = Most significant address

AMS =A

19 for SST39WF1601/1602

30H

Block-Erase

5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H BAX450H

Chip-Erase

5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H 5555H 10H

Erase-Suspend

XXXXH B0H

Erase-Resume

XXXXH 30H

Query Sec ID5

5555H AAH 2AAAH 55H 5555H 88H

User Security ID

Word-Program

5555H AAH 2AAAH 55H 5555H A5H WA6Data

User Security ID

Program Lock-Out

5555H AAH 2AAAH 55H 5555H 85H XXH60000

Software ID Entry7,8

5555H AAH 2AAAH 55H 5555H 90H

SST CFI Query Entry

5555H AAH 2AAAH 55H 5555H 98H

General CFI Query

Mode

55H 98H

Software ID Exit9,10

/CFI Exit/Sec ID Exit

5555H AAH 2AAAH 55H 5555H F0H

Software ID Exit9,10

/CFI Exit/Sec ID Exit

XXH F0H

T6.0 25014

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

5. With AMS-A4= 0; Sec ID is read with A3-A0,

SST ID is read with A3= 0 (Address range = 000000H to 000007H),

User ID is read with A3= 1 (Address range = 000008H to 00000FH).

User ID Lock Status is read with A7-A0= 0000FFH. Unlocked: DQ3= 1 / Locked: DQ3=0.

6. Valid Word-Addresses for Sec ID are from 000000H-000007H and 000008H to 00000FH.

7. The device does not remain in Software Product ID Mode if powered down.

8. With AMS-A1=0; SST Manufacturer ID = 00BFH, is read with A0=0,

SST39WF1601 Device ID = BF274BH, is read with A0=1,

SST39WF1602 Device ID = BF274AH, is read with A0=1.

AMS = Most significant address

AMS =A

19 for SST39WF1601/1602

9. Both Software ID Exit operations are equivalent

10. If users never lock after programming, Sec ID can be programmed over the previously unprogrammed bits (data=1)

using the Sec ID mode again (the programmed “0” bits cannot be reversed to “1”). Valid Word-Addresses for Sec ID are

from 000000H-000007H and 000008H to 00000FH.

Table 7: CFI Query Identification String1

1. Refer to CFI publication 100 for more details.

Address Data Data

10H 0051H Query Unique ASCII string “QRY”

11H 0052H

12H 0059H

13H 0002H Primary OEM command set

14H 0000H

15H 0000H Address for Primary Extended Table

16H 0000H

17H 0000H Alternate OEM command set (00H = none exists)

18H 0000H

19H 0000H Address for Alternate OEM extended Table (00H = none exits)

1AH 0000H

T7.0 25014

Table 8: System Interface Information

Address Data Data

1BH 0016H VDD Min (Program/Erase)

DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts

1CH 0020H VDD Max (Program/Erase)

DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts

1DH 0000H VPP min. (00H = no VPP pin)

1EH 0000H VPP max. (00H = no VPP pin)

1FH 0005H Typical time out for Word-Program 2Nµs (25=32µs)

20H 0000H Typical time out for min. size buffer program 2Nµs (00H = not supported)

21H 0005H Typical time out for individual Sector/Block-Erase 2Nms (25=30ms)

22H 0007H Typical time out for Chip-Erase 2Nms (27= 128 ms)

23H 0001H Maximum time out for Word-Program 2Ntimes typical (21x2

5=64µs)

24H 0000H Maximum time out for buffer program 2Ntimes typical

25H 0001H Maximum time out for individual Sector/Block-Erase 2Ntimes typical (21x2

5=64ms)

26H 0001H Maximum time out for Chip-Erase 2Ntimes typical (21x2

7= 256 ms)

T8.0 25014

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Table 9: Device Geometry Information

Address Data Data

27H 0015H Device size = 2NBytes (15H = 21; 221 = 2 MByte)

28H 0001H Flash Device Interface description; 0001H = x16-only asynchronous interface

29H 0000H

2AH 0000H Maximum number of byte in multi-byte write = 2N(00H = not supported)

2BH 0000H

2CH 0002H Number of Erase Sector/Block sizes supported by device

2DH 00FFH Sector Information (y+1=Number of sectors; z x 256B = sector size)

2EH 0001H y = 511+1=512sectors (01FF = 511)

2FH 0010H

30H 0000H z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16)

31H 001FH Block Information (y+1=Number of blocks; z x 256B = block size)

32H 0000H y = 31+1=32blocks(001F = 31)

33H 0000H

34H 0001H z = 256 x 256 Bytes = 64 KByte/block (0100H = 256)

T9.0 25014

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute

Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these conditions or conditions greater than those defined in the

operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-

ditions may affect device reliability.)

Temperature Under Bias ............................................. -55°C to +125°C

Storage Temperature ................................................ -65°C to +150°C

D. C. Voltage on Any Pin to Ground Potential ............................-0.5V to VDD+0.5V

Transient Voltage (<20 ns) on Any Pin to Ground Potential ..................-2.0V to VDD+2.0V

Voltage on A9Pin to Ground Potential .....................................-0.5V to 13.2V

Package Power Dissipation Capability (TA= 25°C) .................................. 1.0W

Surface Mount Solder Reflow Temperature ...........................260°C for 10 seconds

Output Short Circuit Current1.................................................. 50mA

1. Outputs shorted for no more than one second. No more than one output shorted at a time.

Table 10:Operating Range

Range Ambient Temp VDD

Commercial 0°C to +70°C 1.65-1.95V

Industrial -40°C to +85°C 1.65-1.95V

T10.1 25014

Table 11:AC Conditions of Test1

1. See Figures 18 and 19

Input Rise/Fall Time Output Load

5ns CL=30pF

T11.1 25014

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Table 12:DC Operating Characteristics VDD = 1.65-1.95V1

Symbol Parameter

Limits

Test ConditionsMin Max Units

IDD Power Supply Current Address input=VILT/VIHT, at f=5 MHz,

VDD=VDD Max

Read 10 mA CE#=VIL, OE#=WE#=VIH, all I/Os

open

Program and Erase 25 mA CE#=WE#=VIL, OE#=VIH

ISB Standby VDD Current240 µA CE#=VIHC,V

DD=VDD Max

IALP Auto Low Power 40 µA CE#=VILC,V

DD=VDD Max

All inputs=VSS or VDD, WE#=VIHC

ILI Input Leakage Current 1 µA VIN=GND to VDD,V

DD=VDD Max

ILIW Input Leakage Current

on WP# pin and RST#

10 µA WP#=GND to VDD or RST#=GND to

VDD

ILO Output Leakage Current 1 µA VOUT=GND to VDD,V

DD=VDD Max

VIL Input Low Voltage 0.2VDD VV

DD=VDD Min

VIH Input High Voltage 0.8VDD VV

DD=VDD Max

VOL Output Low Voltage 0.1 V IOL=100 µA, VDD=VDD Min

VOH Output High Voltage VDD-0.1 V IOH=-100 µA, VDD=VDD Min

T12.0 25014

1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25°C

(room temperature), and VDD = 1.8V. Not 100% tested.

2. For all SST39WF160x commercial and industrial devices, ISB typical is under 5 µA.

Table 13:Recommended System Power-up Timings

Symbol Parameter Minimum Units

TPU-READ1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this

parameter.

Power-up to Read Operation 100 µs

TPU-WRITE1Power-up to Program/Erase Operation 100 µs

T13.0 25014

Table 14:Capacitance (TA= 25°C, f=1 Mhz, other pins open)

Parameter Description Test Condition Maximum

CI/O1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this

parameter.

I/O Pin Capacitance VI/O =0V 12pF

CIN1Input Capacitance VIN =0V 6pF

T14.0 25014

Table 15:Reliability Characteristics

Symbol Parameter Minimum Specification Units Test Method

NEND1,2

1. This parameter is measured only for initial qualification and after a design or process change that could affect this

parameter.

2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would

result in a higher minimum specification.

Endurance 10,000 Cycles JEDEC Standard A117

TDR1Data Retention 100 Years JEDEC Standard A103

ILTH1Latch Up 100 + IDD mA JEDEC Standard 78

T15.0 25014

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

AC Characteristics

Table 16:Read Cycle Timing Parameters VDD = 1.65-1.95V

Symbol Parameter Min Max Units

TRC Read Cycle Time 70 ns

TCE Chip Enable Access Time 70 ns

TAA Address Access Time 70 ns

TOE Output Enable Access Time 35 ns

TCLZ1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this

parameter.

CE# Low to Active Output 0 ns

TOLZ1OE# Low to Active Output 0 ns

TCHZ1CE# High to High-Z Output 40 ns

TOHZ1OE# High to High-Z Output 40 ns

TOH1Output Hold from Address Change 0 ns

TRP1RST# Pulse Width 500 ns

TRHR1RST# High before Read 50 ns

TRY1,2

2. This parameter applies to Sector-Erase, Block-Erase and Program operations.

This parameter does not apply to Chip-Erase operations.

RST# Pin Low to Read Mode 203

3. This parameter is 100 µs if reset after an Erase operation.

µs

T16.0 25014

Table 17:Program/Erase Cycle Timing Parameters

Symbol Parameter Min Max Units

TBP Word-Program Time 40 µs

TAS Address Setup Time 0 ns

TAH Address Hold Time 50 ns

TCS WE# and CE# Setup Time 0 ns

TCH WE# and CE# Hold Time 0 ns

TOES OE# High Setup Time 0 ns

TOEH OE# High Hold Time 10 ns

TCP CE# Pulse Width 50 ns

TWP WE# Pulse Width 50 ns

TWPH1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this

parameter.

WE# Pulse Width High 30 ns

TCPH1CE# Pulse Width High 30 ns

TDS Data Setup Time 50 ns

TDH1Data Hold Time 0 ns

TIDA1Software ID Access and Exit Time 150 ns

TSE Sector-Erase 50 ms

TBE Block-Erase 50 ms

TSCE Chip-Erase 200 ms

T17.0 25014

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Figure 4: Read Cycle Timing Diagram

Figure 5: WE# Controlled Program Cycle Timing Diagram

1297 F03.1

ADDRESS A19-0

DQ15-0

WE#

OE#

CE#

TCE

TRC TAA

TOE

TOLZ

VIH

HIGH-Z

TCLZ TOH TCHZ

HIGH-Z

DATA VALIDDATA VALID

TOHZ

1297 F04.1

ADDRESS A19-0

DQ15-0

TDH

TWPH

TDS

TWP

TAH

TAS

TCH

TCS

CE#

SW0 SW1 SW2

5555 2AAA 5555 ADDR

XXAA XX55 XXA0 DATA

INTERNAL PROGRAM OPERATION STARTS

WORD

(ADDR/DATA)

OE#

WE#

TBP

Note: WP# must be held in proper logic state (VIL or

VIH) 1 µs prior to and 1µs after the command sequence.

X can be VIL or VIH, but no other value.

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Figure 6: CE# Controlled Program Cycle Timing Diagram

Figure 7: Data# Polling Timing Diagram

1297 F05.1

ADDRESS A19-0

DQ15-0

TDH

TCPH

TDS

TCP

TAH

TAS

TCH

TCS

WE#

SW0 SW1 SW2

5555 2AAA 5555 ADDR

XXAA XX55 XXA0 DATA

INTERNAL PROGRAM OPERATION STARTS

WORD

(ADDR/DATA)

OE#

CE#

TBP

Note: WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1µs after the command sequence.

X can be VIL or VIH, but no other value.

1297 F06.1

ADDRESS A19-0

DQ7DATA DATA # DATA # DATA

WE#

OE#

CE#

TOEH

TOE

TCE

TOES

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Figure 8: Toggle Bits Timing Diagram

Figure 9: WE# Controlled Chip-Erase Timing Diagram

1297 F07.1

ADDRESS A19-0

DQ6and DQ2

WE#

OE#

CE#

TOE

TOEH

TCE

TOES

TWO READ CYCLES

WITH SAME OUTPUTS

1297 F08.1

ADDRESS A19-0

DQ15-0

WE#

SW0 SW1 SW2 SW3 SW4 SW5

5555 2AAA 2AAA5555 5555

XX55 XX10XX55XXAA XX80 XXAA

5555

OE#

CE#

SIX-BYTE CODE FOR CHIP-ERASE

TSCE

TWP

Note: This device also supports CE# controlled Chip-Erase operation.

The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 17.)

WP# must be held in proper logic state (VIH) 1 µs prior to and 1µs after the command sequence.

X can be VIL or VIH, but no other value.

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Figure 10:WE# Controlled Block-Erase Timing Diagram

Figure 11:WE# Controlled Sector-Erase Timing Diagram

1297 F09.1

ADDRESS A19-0

DQ15-0

WE#

SW0 SW1 SW2 SW3 SW4 SW5

5555 2AAA 2AAA5555 5555

XX55 XX50XX55XXAA XX80 XXAA

BAX

OE#

CE#

SIX-BYTE CODE FOR BLOCK-ERASE

TBE

TWP

Note: This device also supports CE# controlled Block-Erase operation.

The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 17.)

BAX= Block Address

WP# must be held in proper logic state (VIH) 1 µs prior to and 1 µs after the command sequence.

X can be VIL or VIH, but no other value.

1297 F10.1

ADDRESS A19-0

DQ15-0

WE#

SW0 SW1 SW2 SW3 SW4 SW5

5555 2AAA 2AAA5555 5555

XX55 XX30XX55XXAA XX80 XXAA

SAX

OE#

CE#

SIX-BYTE CODE FOR SECTOR-ERASE

TSE

TWP

Note: This device also supports CE# controlled Sector-Erase operation.

The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 17.)

SAX= Sector Address

WP# must be held in proper logic state (VIH) 1 µs prior to and 1µs after the command sequence.

X can be VIL or VIH, but no other value.

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Figure 12:Software ID Entry and Read

Figure 13:CFI Query Entry and Read

1297 F11.1

ADDRESS A14-0

TIDA

DQ15-0

WE#

SW0 SW1 SW2

5555 2AAA 5555 0000 0001

OE#

CE#

Three-Byte Sequence for Software ID Entry

TWP

TWPH TAA

00BF

Device ID

XX55XXAA XX90

Note: WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1µs after the command sequence.

Device ID - See Table 4 X can be VIL or VIH, but no other value.

1297 F12.1

ADDRESS A14-0

TIDA

DQ15-0

WE#

SW0 SW1 SW2

5555 2AAA 5555

OE#

CE#

Three-Byte Sequence for CFI Query Entry

TWP

TWPH TAA

XX55XXAA XX98

Note: WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1µs after the command sequence.

X can be VIL or VIH, but no other value.

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Figure 14:Software ID Exit/CFI Exit

Figure 15:Sec ID Entry

1297 F13.1

ADDRESS A14-0

DQ15-0

TIDA

TWP

TWHP

WE#

SW0 SW1 SW2

5555 2AAA 5555

THREE-BYTE SEQUENCE FOR

SOFTWARE ID EXIT AND RESET

OE#

CE#

XXAA XX55 XXF0

Note: WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1µs after the command sequence.

X can be VIL or VIH, but no other value.

1297 F20.1

ADDRESS A19-0

TIDA

DQ15-0

WE#

SW0 SW1 SW2

5555 2AAA 5555

OE#

CE#

THREE-BYTE SEQUENCE FOR

CFI QUERY ENTRY

TWP

TWPH TAA

XX55XXAA XX88

Note: WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1µs after the command sequence.

X can be VIL or VIH, but no other value.

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Figure 16:RST# Timing Diagram (When no internal operation is in progress)

Figure 17:RST# Timing Diagram (During Program or Erase operation)

1297 F22.0

RST#

CE#/OE#

TRP

TRHR

1297 F23.1

RST#

CE#/OE#

TRP

TRY

End-of-Write Detection

(Toggle-Bit)

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Figure 18:AC Input/Output Reference Waveforms

Figure 19:A Test Load Example

1297 F14.1

REFERENCE POINTS OUTPUTINPUT VIT

VIHT

VILT

VOT

AC test inputs are driven at VIHT (0.9 VDD) for a logic “1” and VILT (0.1 VDD) for a logic “0”. Mea-

surement reference points for inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input rise

and fall times (10% 90%) are <5 ns.

Note: VIT -V

INPUT Test

VOT -V

OUTPUT Test

VIHT -V

INPUT HIGH

Test

1297 F15.1

TO TESTER

TO DUT

VDD

25K

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Figure 20:Word-Program Algorithm

1297 F16.0

Start

Load data: XXAAH

Address: 5555H

Load data: XX55H

Address: 2AAAH

Load data: XXA0H

Address: 5555H

Load Word

Address/Word

Data

Wait for end of

Program (TBP,

Data# Polling

bit, or Toggle bit

operation)

Program

Completed

Note: X can be VIL or VIH, but no other value.

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Figure 21:Wait Options

1297 F17.0

Wait TBP,

TSCE, TSE

or TBE

Program/Erase

Initiated

Internal Timer Toggle Bit

Ye s

Program/Erase

Completed

Does DQ6

match

Read same

word

Data# Polling

Program/Erase

Completed

Program/Erase

Completed

Read word

Is DQ7=

true data

Read DQ7

Program/Erase

Initiated

Program/Erase

Initiated

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Figure 22:Software ID/CFI Entry Command Flowcharts

1297 F21.0

Load data: XXAAH

Address: 5555H

Software Product ID

Entry

Command Sequence

Load data: XX55H

Address: 2AAAH

Load data: XX90H

Address: 5555H

Wait TIDA

Read Software ID

Load data: XXAAH

Address: 5555H

CFI Query Entry

Command Sequence

Load data: XX55H

Address: 2AAAH

Load data: XX98H

Address: 5555H

Wait TIDA

Read CFI data

Load data: XXAAH

Address: 5555H

Sec ID Query Entry

Command Sequence

Load data: XX55H

Address: 2AAAH

Load data: XX88H

Address: 5555H

Wait TIDA

Read Sec ID

Load data: XX98H

Address: 55H

eneral

CFI Query Entry

Command Sequence

Wait TIDA

Read CFI data

Note: X can be VIL or VIH, but no other value.

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Figure 23:Software ID/CFI Exit Command Flowcharts

1297 F18.0

Load data: XXAAH

Address: 5555H

Software ID Exit/CFI Exit/Sec ID Exit

Command Sequence

Load data: XX55H

Address: 2AAAH

Load data: XXF0H

Address: 5555H

Load data: XXF0H

Address: XXH

Return to normal

operation

Wait TIDA

Return to normal

operation

Note: X can be VIL or VIH, but no other value.

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Figure 24:Erase Command Sequence

1297 F19.0

Load data: XXAAH

Address: 5555H

Chip-Erase

Command Sequence

Load data: XX55H

Address: 2AAAH

Load data: XX80H

Address: 5555H

Load data: XX55H

Address: 2AAAH

Load data: XX10H

Address: 5555H

Load data: XXAAH

Address: 5555H

Wait TSCE

Chip erased

to FFFFH

Load data: XXAAH

Address: 5555H

Sector-Erase

Command Sequence

Load data: XX55H

Address: 2AAAH

Load data: XX80H

Address: 5555H

Load data: XX55H

Address: 2AAAH

Load data: XX30H

Address: SAX

Load data: XXAAH

Address: 5555H

Wait TSE

Sector erased

to FFFFH

Load data: XXAAH

Address: 5555H

Block-Erase

Command Sequence

Load data: XX55H

Address: 2AAAH

Load data: XX80H

Address: 5555H

Load data: XX55H

Address: 2AAAH

Load data: XX50H

Address: BAX

Load data: XXAAH

Address: 5555H

Wait TBE

Block erased

to FFFFH

Note: X can be VIL or VIH, but no other value.

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Product Ordering Information

Valid Combinations for SST39WF1601

SST39WF1601-70-4C-B3KE SST39WF1601-70-4C-MAQE

SST39WF1601-70-4I-B3KE SST39WF1601-70-4I-MAQE

Valid Combinations for SST39WF1602

SST39WF1602-70-4C-B3KE SST39WF1602-70-4C-MAQE

SST39WF1602-70-4I-B3KE SST39WF1602-70-4I-MAQE

Note:Valid combinations are those products in mass production or will be in mass production. Consult your SST

sales representative to confirm availability of valid combinations and to determine availability of new combi-

nations.

SST 39 WF 1602 - 70 - 4C - B3KE

XX XX XXXX - XX - XX - XXXX

Environmental Attribute

E1= non-Pb

Package Modifier

K = 48 balls

Q = 48 balls (66 possible positions)

Package Type

B3 = TFBGA (6mm x 8mm)

MB = WFBGA (5mm x 6mm)

MA = WFBGA (4mm x 6mm)

Temperature Range

C = Commercial = 0°C to +70°C

I = Industrial = -40°C to +85°C

Minimum Endurance

4 = 10,000 cycles

Read Access Speed

70=70ns

Hardware Block Protection

1 = Bottom Boot-Block

2 = Top Boot-Block

Device Density

160 = 16 Mbit

Voltage

W = 1.65-1.95V

Product Series

39 = Multi-Purpose Flash

1. Environmental suffix “E” denotes non-Pb sol-

der. SST non-Pb solder devices are “RoHS

Compliant”.

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Packaging Diagrams

Figure 25:48-ball Thin-Profile, Fine-pitch Ball Grid Array (TFBGA) 6mm x 8mm

SST Package Code: B3K

A1 CORNER

HGFEDCBA

ABCDEFGH

BOTTOM VIEWTOP VIEW

SIDE VIEW

SEATING PLANE

0.35 0.05

1.10 0.10

0.12

6.00 0.10

0.45 0.05

(48X)

A1 CORNER

8.00 0.10

0.80

4.00

0.80

5.60

48-tfbga-B3K-6x8-450mic-5

Note: 1. Complies with JEDEC Publication 95, MO-210, variant AB-1 , although some dimensions may be more stringent.

2. All linear dimensions are in millimeters.

3. Coplanarity: 0.12 mm

4. Ball opening size is 0.38 mm ( 0.05 mm)

1mm

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Figure 26:48-ball Very-Very-Thin-Profile, Fine-pitch Ball Grid Array (WFBGA) 4mm x 6mm

SST Package Code MAQ

LKJHGFEDCBA

ABCDEFGHJKL

0.50

BOTTOM VIEW

4.00

0.08

0.32 0.05

(48X)

6.00

0.08

2.50

5.00

A1 CORNER

TOP VIEW

48-wfbga-MAQ-4x6-32mic-2.0

Note: 1. Complies with JEDEC Publication 95, MO-207, Variant CB-4 except nominal ball size is larger

and bottom side A1 indicator is triangle at corner.

2. All linear dimensions are in millimeters.

3. Coplanarity: 0.08 mm

4. Ball opening size is 0.29 mm ( 0.05 mm)

1mm

DETAIL SIDE VIEW

SEATING PLANE

0.20 0.06

0.73 max.

0.636 nom.

0.08

A1 INDICATOR

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

Data Sheet

Microchip Technology Company

Table 18:Revision History

Number Description Date

00 •Initial release Oct 2005

01 •Added MBQ package information including product numbers.

•Migrated document to Preliminary Specifications

•Updated Table 12 on page 16

Jul 2006

02 •Added 70 ns to Features: Fast Read Access Time

•Added 70 ns columns to Table 16

•Edited Product Ordering Information and Valid Combination to include 70

ns and remove leaded parts.

Aug 2007

03 •Added YIQE package Jul 2008

04 •Changed 000010H to 000017H to 000008H to 00000FH three places in

footnotes of Table 6 on page 12.

Dec 2008

05 •EOL of SST39WF1601-70-4C-Y1QE, SST39WF1601-70-4I-Y1QE,

SST39WF1602-70-4C-Y1QE, and SST39WF1602-70-4I-Y1QE.

Replacement parts SST39WF1601-70-4C-MAQE, SST39WF1601-70-4I-

MAQE, SST39WF1602-70-4C-MAQE, and SST39WF1602-70-4I-MAQE

in this document.

•Added MAQE package drawing and information.

•Removed all 90ns speed products

Nov 2009

06 •EOL of MBQE products. Jan 2011

A•Applied new document format

•Released document under new letter revision system

•Updated spec number S71297 to DS-25014

Apr 2011

SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon Storage Tech-

nology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademarks of Silicon Storage Technology, Inc. All other trademarks and

registered trademarks mentioned herein are the property of their respective owners.

Specifications are subject to change without notice. Refer to www.microchip.com for the most recent documentation. For the most current

package drawings, please see the Packaging Specification located at http://www.microchip.com/packaging.

Memory sizes denote raw storage capacity; actual usable capacity may be less.

SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of

Sale.

For sales office(s) location and information, please see www.microchip.com.

Silicon Storage Technology, Inc.

A Microchip Technology Company

www.microchip.com

ISBN:978-1-61341-101-8