1
Item Symbol Ratings Unit Remarks
Drain-source voltage V DS 150
VDSX 150
Continuous Drain Current ID92
Pulsed Drain Current ID(puls] ±368
Gate-Source Voltage VGS ±30
Maximum Avalanche current IAR 92
Non-Repetitive EAS 1205.7
Maximum Avalanche Energy
Repetitive EAR 41
Maximum Avalanche Energy
Maximum Drain-Source dV/dt dVDS/dt 20
Peak Diode Recovery dV/dt dV/dt 5
Max. Power Dissipation PD410
2.50
Operating and Storage Tch +150
Temperature range T stg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
2SK3788-01
FUJI POWER MOSFET
Features
High speed switching, Low on-resistance
Low driving power, Avalanche-proof
No secondary breakdown
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero Gate Voltage Drain Current IDSS VDS=150V VGS=0V
VDS=120V VGS=0V
VGS=±30V
ID=46A VGS=10V
ID=46A VDS=25V
VCC=48V ID=46A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
mΩ
S
pF
nC
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 0.305
50.0 °C/W
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=75V
ID=92A
VGS=10V
IF=92A VGS=0V Tch=25°C
IF=92A VGS=0V
-di/dt=100A/µs Tch=25°C
V
V
A
A
V
A
mJ
mJ
kV/µs
kV/µs
W
°C
°C
150
3.0 5.0
25
250
100
21 26
12 24
3800 5400
530 795
35 52.5
40 60
112 168
56 84
30 45
80 120
30 45
25 38
1.20 1.50
250
2.0
-55 to +150
Outline Drawings (mm)
www.fujielectric.co.jp/fdt/scd
Super F AP-G Series
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
200406
VGS=-30V
Note *1
Note *2
Note *3
VDS 150V
Note *4
Tc=25°C
Ta=25°C
=
<
Note *1:Tch 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=37A,L=1.29mH,
VCC=48V,RG=50Ω
EAS limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:IF -ID, -di/dt=50A/µs,VCC BVDSS,Tch 150°C
=
<
Gate(G)
Source(S)
Drain(D)
=
<
=
<=
<
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2
Characteristics
2SK3788-01 FUJI POWER MOSFET
0 25 50 75 100 125 150
0
100
200
300
400
500
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
0510
0
20
40
60
80
100
120
140
7V
20V10V 8V
6.5V
VGS=6.0V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
012345678910
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80 µs pulse t est,VDS=25V,Tch=25°C
0 102030405060708090100110120130140
0.00
0.05
0.10
0.15
8V
RDS(o n) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
10V
20V
7V
6.5V
VGS=6V
-50 -25 0 25 50 75 100 125 150
0.00
0.05
0.10
0.15
RDS(o n) [ Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=36.5A,VGS=10V
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3
2SK3788-01 FUJI POWER MOSFET
-50-250 255075100125150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
VGS(th) [V]
Tch [°C]
0 102030405060708090100110120130140
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=92A,Tch=25 °C
VGS [V]
120V
75V
Vcc= 30V
10-1 100101102103
100
101
102
103
104
C [pF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0.1
1
10
100
1000
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25°C
100101102103
100
101
102
103
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10Ω
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0 25 50 75 100 125 150
0
200
400
600
800
1000
1200
1400
IAS=37A
IAS=56A
IAS=92A
EAV [mJ]
starting Tch [°C]
Maxim um Avalanche Ener gy vs. starting Tch
E(AV)=f( st art ing Tc h) :Vcc =48V,I (AV)<= 92A
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2SK3788-01 FUJI POWER MOSFET
http://www.fujielectric.co.jp/fdt/scd/
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):start ing Tch= 25 °C,Vcc=48V
Avalanche Current I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Transient Ther m al Im pedanc e
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
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