1
TGP2104
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Key Features and Performance
•Frequency Range: 30-40 GHz
•3.5 dB Nominal Insertion Loss
•10 deg Phase Error @ 35 GHz
•0. 1 dB Amplitude Error @ 35 GHz
•Positive Control Voltage
•0.25µm 3MI pHEMT Technology
•Chip dimensions:
0.93 x 0.74 x 0.10 mm
(0.037 x 0.029 x 0.004 inches)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
Amplitude Error (dB)
140
145
150
155
160
165
170
175
180
185
190
Phase (deg)
Measured Performance
Primary Applications
•Military Radar
•Transmit / Receive
Product Description
The TriQuint TGP2104 is a 180° digital
phase shifter MMIC design using
TriQuint’s proven 0.25 μm Three Metal
Interconnect (3MI) pHEMT process. The
TGP2104 will support a variety of Ka-
Band phased array applications including
military radar.
This design utilizes a compact topology
that achieves a 0.69 mm2die area and
high performance.
The TGP2104 provides a 180° digital
phase shift function with a nominal 3.5
dB insertion loss and maximum 15°
phase shift error over a bandwidth of 30-
40 GHz.
The TGP2104 requires no off-chip
components and operates with a 5V
control voltage. Each device is RF tested
on-wafer to ensure performance
compliance. The device is available in
chip form.
Lead-Free and RoHS compliant
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
S21 (dB)
State 0
State 1
30 - 40 GHz 180 Phase Shifter
Datasheet subject to change without notice
2
TGP2104
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
TABLE I
MAXIMUM RATINGS
Symbol Parameter Value Notes
V
1
, V
2
Control Voltage 8 V 1/ 2/
I
C
Control Supply Current 1 mA 1/ 2/
P
IN
Input Continuous Wave Power 20 dBm 1/ 2/
P
D
Power Dissipation 0.392 W 1/ 2/
T
CH
Operating Channel Temperature 200 °C 3/
Mounting Temperature
(30 Seconds)
320 °C
T
STG
Storage Temperature -65 to 150 °C
1/ These ratings represent the maximum operable values for this device
2/ Combinations of supply voltage, supply current, input power, and output power shall
not exceed P
D
3/ Junction operating temperature will directly affect the device median time to failure
(Tm). For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
3
TGP2104
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
TABLE II
RF CHARACTERIZATION TABLE
(T
A
= 25°C, Nominal)
(V
1
=V
2
= 5V)
Parameter Test
Conditions
Typ Units
Insertion Loss 30 - 40 GHz 3.5 dB
Max Amplitude Error 30 - 40 GHz 1 dB
Max Phase Shift Error 30 - 40 GHz 15 deg
Input Return Loss
30 - 40 GHz 12 dB
Output Return Loss 30 - 40 GHz 12 dB
Note: The RF Characteristics of typical devices are determined by fixtured
measurements.
State Table
State V1 V2 Phase shift
0 5 V 0 V Reference
15 V 5 V180º
4
TGP2104
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Median Lifetime (Tm) vs. Channel Temperature
TABLE III
Thermal Information
Parameter Test Conditions Tch
( °C)
θ
JC
(°C/W)
Tm
(hrs)
θ
JC
Thermal Resistance
(channel to backside of
die)
V
1
= V
2
= 5 V
I
2
= 10 uA
Pdiss = 50 uW
Tbaseplate=70 C
70 204 >1 E 9
5
TGP2104
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
20 25 30 35 40 45 50
Frequency (GHz)
Amplitude Error (dB)
140
145
150
155
160
165
170
175
180
185
190
Phase (deg)
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
20 25 30 35 40 45 50
Frequency (GHz)
S21 (dB)
State 0
State 1
6
TGP2104
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data
-30
-25
-20
-15
-10
-5
0
20 25 30 35 40 45 50
Frequency (GHz)
S22 (dB)
State 0
State 1
-30
-25
-20
-15
-10
-5
0
20 25 30 35 40 45 50
Frequency (GHz)
S11 (dB)
State 0
State 1
7
TGP2104
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Mechanical Drawing
Units: millimeters (inches)
Thickness: 0.102 (0.004) (reference only)
Chip edge to bond pad dimensions are shown to center of Bond pads.
Chip size tolerance: ± 0.051 (0.002)
RF Ground through Backside
Bond Pad #1 (RF Input) 0.076 x 0.150 (0.003 x 0.006)
Bond Pad #1 (RF Output) 0.076 x 0.150 (0.003 x 0.006)
Bond Pad #3 (V1) 0.100 x 0.100 (0.004 x 0.004)
Bond Pad #4 (V2) 0.100 x 0.100 (0.004 x 0.004)
8
TGP2104
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
- RF Input and Output should have two 1 mil bond wires
- Input and Output Flares are 0.010" x 0.025" on 0.010" alumina substrate
V1 = 5 V
V2 = 0 V, 5 V
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Chip Assembly & Bonding Diagram
9
TGP2104
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C.
(30 seconds maximum)
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used because of differential heating.
• Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Maximum stage temperature is 200°C.
Assembly Process Notes
