TGP2104 30 - 40 GHz 180 Phase Shifter Key Features and Performance * Frequency Range: 30-40 GHz * 3.5 dB Nominal Insertion Loss * 10 deg Phase Error @ 35 GHz * 0. 1 dB Amplitude Error @ 35 GHz * Positive Control Voltage * 0.25m 3MI pHEMT Technology * Chip dimensions: 0.93 x 0.74 x 0.10 mm (0.037 x 0.029 x 0.004 inches) Primary Applications * * Military Radar Transmit / Receive Product Description 10.0 190 9.0 185 8.0 180 7.0 175 6.0 170 5.0 165 4.0 160 3.0 155 2.0 150 1.0 145 0.0 Phase (deg) Amplitude Error (dB) Measured Performance 140 30 31 32 33 34 35 36 37 38 39 40 0 -1 S21 (dB) -2 -3 -4 -5 State 0 -6 State 1 -7 -8 -9 -10 31 32 33 34 35 36 This design utilizes a compact topology that achieves a 0.69 mm2 die area and high performance. The TGP2104 provides a 180 digital phase shift function with a nominal 3.5 dB insertion loss and maximum 15 phase shift error over a bandwidth of 3040 GHz. Frequency (GHz) 30 The TriQuint TGP2104 is a 180 digital phase shifter MMIC design using TriQuint's proven 0.25 m Three Metal Interconnect (3MI) pHEMT process. The TGP2104 will support a variety of KaBand phased array applications including military radar. 37 38 39 40 Frequency (GHz) The TGP2104 requires no off-chip components and operates with a 5V control voltage. Each device is RF tested on-wafer to ensure performance compliance. The device is available in chip form. Lead-Free and RoHS compliant Datasheet subject to change without notice TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 1 TGP2104 TABLE I MAXIMUM RATINGS Symbol V1, V2 Parameter Control Voltage Value Notes 8V 1/ 2/ 1 mA 1/ 2/ IC Control Supply Current PIN Input Continuous Wave Power 20 dBm 1/ 2/ PD Power Dissipation 0.392 W 1/ 2/ TCH Operating Channel Temperature 200 C 3/ Mounting Temperature (30 Seconds) 320 C Storage Temperature -65 to 150 C TSTG 1/ These ratings represent the maximum operable values for this device 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD 3/ Junction operating temperature will directly affect the device median time to failure (Tm). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 2 TGP2104 TABLE II RF CHARACTERIZATION TABLE (TA = 25C, Nominal) (V1=V2 = 5V) Parameter Insertion Loss Max Amplitude Error Max Phase Shift Error Input Return Loss Output Return Loss Test Conditions 30 - 40 GHz 30 - 40 GHz 30 - 40 GHz 30 - 40 GHz 30 - 40 GHz Typ Units 3.5 1 15 12 12 dB dB deg dB dB Note: The RF Characteristics of typical devices are determined by fixtured measurements. State Table State V1 V2 Phase shift 0 5V 0V Reference 1 5V 5V 180 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 3 TGP2104 TABLE III Thermal Information Parameter Test Conditions JC Thermal Resistance (channel to backside of die) V1 = V2 = 5 V I2 = 10 uA Pdiss = 50 uW Tbaseplate=70 C Tch ( C) JC (C/W) Tm (hrs) 70 204 >1 E 9 Median Lifetime (Tm) vs. Channel Temperature TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 4 TGP2104 10.0 190 9.0 185 8.0 180 7.0 175 6.0 170 5.0 165 4.0 160 3.0 155 2.0 150 1.0 145 Phase (deg) Amplitude Error (dB) Measured Data 140 0.0 20 25 30 35 40 45 50 Frequency (GHz) 0 -1 S21 (dB) -2 -3 -4 -5 State 0 -6 State 1 -7 -8 -9 -10 20 25 30 35 40 45 50 Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 5 TGP2104 Measured Data 0 State 0 S11 (dB) -5 State 1 -10 -15 -20 -25 -30 20 25 30 35 40 45 50 Frequency (GHz) 0 State 0 S22 (dB) -5 State 1 -10 -15 -20 -25 -30 20 25 30 35 40 45 50 Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 6 TGP2104 Mechanical Drawing Units: millimeters (inches) Thickness: 0.102 (0.004) (reference only) Chip edge to bond pad dimensions are shown to center of Bond pads. Chip size tolerance: 0.051 (0.002) RF Ground through Backside Bond Pad #1 (RF Input) 0.076 x 0.150 (0.003 x 0.006) Bond Pad #1 (RF Output) 0.076 x 0.150 (0.003 x 0.006) Bond Pad #3 (V1) 0.100 x 0.100 (0.004 x 0.004) Bond Pad #4 (V2) 0.100 x 0.100 (0.004 x 0.004) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 7 TGP2104 Chip Assembly & Bonding Diagram V1 = 5 V V2 = 0 V, 5 V - RF Input and Output should have two 1 mil bond wires - Input and Output Flares are 0.010" x 0.025" on 0.010" alumina substrate GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 8 TGP2104 Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. (30 seconds maximum) An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 9