Type 2N3866A
Geometry 1007
Polarity NPN
Qual Level: JAN - JANS
Data Sheet No. 2N3866A
Generic Part Number:
2N3866A
REF: MIL-PRF-19500/398
Features:
• General-purpose silicon transistor
for switching and amplifier appli-
cations.
• Housed in TO-39 case.
• Also available in chip form using
the 1007 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/398 which
Semicoa meets in all cases.
Rating Symbol Rating Unit
Collector-Emitter Voltage VCEO 30 V
Collector-Base Voltage VCBO 60 V
Emitter-Base Voltage VEBO 3.5 V
Collector Current, Continuous IC0.4 A
Operating Junction Temperature TJ-55 to +175 oC
Storage Temperature TSTG -55 to +175 oC
Maximum Ratings
TC = 25oC unless otherwise specified
TO-39
Data Sheet No. 2N3866A
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
IC = 100 µA, pulsed
Collector-Emitter Breakdown Voltage
IC = 5 mA, pulsed
Collector-Emitter Breakdown Voltage
IC = 40 mA, VBE = -5V, clamped
Emitter-Base Breakdown Voltage
IE = 100 µA, pulsed
Collector-Emitter Cutoff Current
VCE = 55 V
Collector-Emitter Cutoff Current
VCE = 55 V, TA = +150
o
C
Collector-Emitter Cutoff Current
VCE = 28 V
Electrical Characteristics
TC = 25oC unless otherwise specified
V(BR)CBO 60 --- V
V(BR)CEO 30 --- V
V
V(BR)EBO 3.5 ---
ICES --- 100 µA
ICES2 --- 2.0 mA
ICEO --- 20 µA
V(BR)CEC 55 --- ---
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
IC = 50 mA, VCE = 5.0 V (pulsed) hFE1 25 200 ---
IC = 360 mA, VCE = 5.0 V (pulsed) hFE2 8.0 --- ---
IC = 50 mA, VCE = 5.0 V (pulsed), TA = -55oChFE3 12 --- ---
Collector-Emitter Saturation Voltage
IC = 100 mA, IB = 10 mA (pulsed) VCE(sat) --- 1.0 V dc
Power Output
VCC = 28 V, PIN = 0.15 W, f = 400 MHz P1out 1.0 2.0 W
Power Output
VCC = 28 V, PIN = 0.075 W, f = 400 MHz P2out 0.5 --- W
Collector Efficiency
VCC = 28 V, PIN = 0.15 W, f = 400 MHz n145 --- %
Collector Efficiency
VCC = 28 V, PIN = 0.075 W, f = 400 MHz n240 --- %
Small Signal Characteristics
Symbol
Min
Max
Unit
Magnitude of Common Emitter, Small Signal, Short Circuit
Current Transfer Ratio
IC = 50 mA, VCE = 15 V, f = 200
Open Circuit Output Capacitance
VCB = 28 V, IE = 0
|hFE|4.0 7.5 ---
pF
COBO --- 3.5
