© Semiconductor Components Industries, LLC, 2008
February, 2008 - Rev. 3
1Publication Order Number:
UESD3.3ST5G/D
mESD3.3ST5G SERIES
ESD Protection Diodes
In Ultra Small SOD-723 Package
The mESD Series is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space comes at a premium.
Specification Features:
•Small Body Outline Dimensions:
0.055″ x 0.024″(1.40 mm x 0.60 mm)
•Low Body Height: 0.020″ (0.5 mm)
•Stand-off Voltage: 3.3 V - 12 V
•Low Leakage
•Response Time is Typically < 1 ns
•ESD Rating of Class 3 (> 16 kV) per Human Body Model
•IEC61000-4-2 Level 4 ESD Protection
•IEC61000-4-4 Level 4 EFT Protection
•These are Pb-Free Devices
Mechanical Characteristics:
CASE: Void‐free, transfer‐molded, thermosetting plastic
Epoxy Meets UL 94 V-0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating Symbol Value Unit
IEC 61000-4-2 (ESD) Air
Contact
±30
±30
kV
IEC 61000-4-4 (EFT) 40 A
ESD Voltage Per Human Body Model
Per Machine Model
16
400
kV
V
Total Power Dissipation on FR-5 Board
(Note 1) @ TA = 25°C
⎪
PD150 mW
Junction and Storage Temperature Range TJ, Tstg -55 to
+150
°C
Lead Solder Temperature - Maximum
(10 Second Duration)
TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-5 = 1.0 x 0.75 x 0.62 in.
12
PIN 1. CATHODE
2. ANODE
Device Package Shipping†
ORDERING INFORMATION
mESDxxST5G SOD-723
(Pb-Free)
8000/Tape & Reel
MARKING
DIAGRAM
See specific marking information in the device marking
column of the table on page 2 of this data sheet.
DEVICE MARKING INFORMATION
http://onsemi.com
SOD-723
CASE 509AA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
XX = Specific Device Code
M = Date Code
G= Pb-Free Package
(Note: Microdot may be in either location)
XX MG
G
mESD3.3ST5G SERIES
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2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
IFForward Current
VFForward Voltage @ IF
Ppk Peak Power Dissipation
CMax. Capacitance @VR = 0 and f = 1 MHz
Uni-Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VCVBR
VF
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types)
Device*
Device
Marking
VRWM (V)
IR (mA) @
VRWM
VBR (V) @ IT
(Note 2) IT
VC (V)
@ Max IPP†IPP (A)†
Ppk
(W)†C (pF)
Max Max Min mA Max Max Max Typ
mESD3.3ST5G E0 3.3 2.5 5.0 1.0 10.9 10.4 113 80
mESD5.0ST5G E2 5.0 1.0 6.2 1.0 13.3 8.8 117 65
mESD12ST5G E3 12 1.0 13.5 1.0 23.7 5.4 128 30
*Other voltages available upon request.
†Surge current waveform per Figure 1.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
Figure 1. 8 x 20 ms Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0020406080
t, TIME (ms)
% OF PEAK PULSE CURRENT
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
PEAK VALUE IRSM @ 8 ms
HALF VALUE IRSM/2 @ 20 ms
mESD3.3ST5G SERIES
http://onsemi.com
3
TYPICAL CHARACTERISTICS
-55 +25
7.4
Figure 2. Typical Breakdown Voltage
versus Temperature
TEMPERATURE (°C)
+150
7.2
7.1
7.0
6.9
6.8
6.3 -55
20
Figure 3. Typical Leakage Current
versus Temperature
TEMPERATURE (°C)
+25
16
12
8
4
0
BREAKDOWN VOLTAGE (VOLTS) (VZ @ IZ)
IR (nA)
7.3
+150
6.7
6.6
6.5
6.4
18
14
10
6
2
mESDxxST5G
mESDxxST5G
Figure 4. Positive 8 kV contact per IEC 6100-4-2
- mESD5.0ST5G
Figure 5. Negative 8 kV contact per IEC 61000-4-2
- mESD5.0ST5G
mESD3.3ST5G SERIES
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4
PACKAGE DIMENSIONS
SOD-723
CASE 509AA-01
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
DIM MIN NOM MAX
MILLIMETERS
A0.49 0.52 0.55
b0.25 0.28 0.32
c0.08 0.12 0.15
D0.95 1.00 1.05
E0.55 0.60 0.65
1.35 1.40 1.45
L0.15 0.20 0.25
HE
0.019 0.020 0.022
0.0098 0.011 0.013
0.0032 0.0047 0.0059
0.037 0.039 0.041
0.022 0.024 0.026
0.053 0.055 0.057
0.006 0.0079 0.010
MIN NOM MAX
INCHES
D
E
b
c
A
L
2X
-Y-
-X-
0.08 (0.0032) XY
HE
0.45
0.0177
0.50
0.0197
1.1
0.043
ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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UESD3.3ST5G/D
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