HSB83J
Silicon Epitaxial Planar Diode for High Voltage Switching
ADE-208-489(Z)
Rev 0
Features
• High reverse voltage. (VR = 250V)
• CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HSB83J F7 CMPAK
Outline
HSB83J
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Peak reverse voltage VRM 300 V
Reverse voltage VR250 V
Peak forward current IFM 300 mA
Non-Repetitive peak
forward surge current IFSM*1 2 A
Average rectified current IO100 mA
Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C
Note: 1. Value at duration of 10msec.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage VF— — 1.2 V IF = 100 mA
Reverse current IR1 — — 0.2 µA VR = 250V
IR2 — — 100 VR = 300V
Capacitance C — — 3.0 pF VR = 0V, f = 1 MHz
Reverse recovery
time trr — — 100 ns IF = IR = 30 mA, Irr = 3mA, RL = 100Ω
HSB83J
3
Main Characteristic
HSB83J
4
Package Dimensions
Unit : mm
