HSB83J Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-489(Z) Rev 0 Features * High reverse voltage. (VR = 250V) * CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HSB83J F7 CMPAK Outline HSB83J Absolute Maximum Ratings (Ta = 25C) Item Symbol Value Unit Peak reverse voltage VRM 300 V Reverse voltage VR 250 V Peak forward current I FM 300 mA 2 A *1 Non-Repetitive peak forward surge current I FSM Average rectified current IO 100 mA Junction temperature Tj 125 C Storage temperature Tstg -55 to +125 C Note: 1. Value at duration of 10msec. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF -- -- 1.2 V I F = 100 mA Reverse current I R1 -- -- 0.2 A VR = 250V I R2 -- -- 100 Capacitance C -- -- 3.0 pF VR = 0V, f = 1 MHz Reverse recovery time t rr -- -- 100 ns I F = IR = 30 mA, Irr = 3mA, RL = 100 2 VR = 300V HSB83J Main Characteristic 3 HSB83J Package Dimensions Unit : mm 4