New Product LVB1560 Vishay General Semiconductor Low VF Single-Phase Single In-Line Bridge Rectifiers FEATURES * UL recognition file number E54214, Vol. 1 * Thin single in-Iine package * Oxide planar chip junction * Low forward voltage drop * High surge current capability ~ ~ ~ ~ * High case dielectric strength of 2500 VRMS * Solder dip 275 C max. 10 s, per JESD 22-B106 * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Case Style GSIB-5S * Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances and white-goods applications specially for Telecom power supply, high efficiency desktop PC and server SMPS: PRIMARY CHARACTERISTICS IF(AV) 15 A VRRM 600 V IFSM 400 A IR 10 A VF at IF = 7.5 A, TA = 125 C 0.73 V TJ max. 150 C MECHANICAL DATA Case: GSIB-5S Epoxy meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 in-lbs) maximum Recommended Torque: 5.7 cm-kg (5 in-lbs) MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified output current at TC = 125 C TA = 25 C Non-repetiitive peak forward surge current 8.3 ms single sine-wave, TJ = 25 C Rating for fusing (t < 8.3 ms) TJ = 25 C Operating junction and storage temperature range SYMBOL LVB1560 UNIT VRRM 600 V IO (1) 15 IO (2) 3.6 IFSM 400 A I2t 664 A2s TJ, TSTG - 55 to + 150 C A Notes (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on PCB without heatsink Document Number: 89392 Revision: 20-Dec-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 New Product LVB1560 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS TA = 25 C IF = 7.5 A Instantaneous forward voltage VF (1) TA = 125 C TA = 25 C VR = 600 V Reverse current per diode SYMBOL TYP. MAX. 0.87 0.90 0.73 - 0.2 10 60 - V IR (2) TA = 125 C UNIT A Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 1.8 - s Typical junction capacitance 4.0 V, 1 MHz CJ 260 - pF Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Maximum thermal resistance LVB1560 RJA (2) 25 RJC (1) 1.0 UNIT C/W Notes With heatsink Without heatsink, free air (1) (2) EMC SURGE IMMUNITY TEST STANDARD (TA = 25 C, unless otherwise noted) STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VALUE VPEAK - 6 kV maximum IEC 61000-4-5 Power supply coupling mode, line to line 1.2/50 s waveform, R = 2 , TA = 25 C (1) Note (1) Immunity to IEC 61000-4-5 peak pulse voltage test, 1.2/50 s, 2 , 5 times each of positive and negative polarity test ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 6.9 45 20 Tube LVB1560-M3/45 RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) Average Forward Rectified Current (A) Average Forward Output Current (A) 20 With Heatsink, Sine-Wave, R-Load 15 10 TC Measurement 5 5 4 3 2 1 Without Heatsink Sine-wave, R-Load, Free Air, TA 0 0 0 25 50 75 100 125 150 Temperature (C) Fig. 1 - Derating Curve Output Rectified Current www.vishay.com 2 0 25 50 75 100 125 150 Ambient Temperature (C) Fig. 2 - Forward Current Derating Curve For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 89392 Revision: 20-Dec-10 New Product LVB1560 Vishay General Semiconductor 1000 Instantaneous Reverse Current (A) Forward Power Dissipation (W) 28 24 20 16 12 8 4 0 TA = 150 C 100 TA = 125 C 10 TA = 100 C 1 0.1 TA = 25 C 0.01 0 2 4 6 8 10 12 14 16 10 Average Forward Current ( A ) Fig. 3 - Forward Power Dissipation Junction Capacitance (pF) Instantaneous Forward Current (A) 40 50 60 70 80 90 100 1000 TA = 150 C 10 TA = 125 C 0.1 0.3 30 Fig. 5 - Typical Reverse Characteristics Per Diode 100 1 20 Percent of Rated Peak Reverse Voltage (%) TA = 100 C TA = 25 C TJ = 25 C f = 1 MHz Vstg = 50 mVP-P 100 10 1 0.4 0.5 0.6 0.7 0.8 0.9 1 0.1 1.1 1 10 100 Reverse Voltage (V) Instantaneous Forward Voltage (V) Fig. 4 - Typical Forward Characteristics Per Diode Fig. 6 - Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in millimeters Case Style GSIB-5S 4.6 0.2 3.5 0.2 11 0.2 20 0.3 5 + 3.2 0.2 3.6 0.2 30 0.3 2.2 0.2 1 0.1 10 0.2 Document Number: 89392 Revision: 20-Dec-10 7.5 0.2 7.5 0.2 2.7 0.2 17.5 0.5 4 0.2 2.5 0.2 0.7 0.1 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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