VRRM = IF = 2500 V 100 A Fast-Diode Die 5SLX 12L2510 Die size: 12.4 x 12.4 mm Doc. No. 5SYA1664-02 Feb. 05 * * * * Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1) Parameter Symbol Repetitive peak reverse voltage Continuous forward current Repetitive peak forward current Junction temperature 1) min Unit VRRM 2500 V IF 100 A 200 A -40 125 C min typ max Unit 1.4 1.75 2.0 V Limited by Tvjmax Tvj Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2 Diode characteristic values Parameter 2) Symbol Conditions Continuous forward voltage VF IF = 100 A Continuous reverse current IR VR = 2500 V Peak reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 2) max IFRM Conditions Erec IF = 100 A, VR = 1250 V, di/dt = 440 A/s, L = 1200 nH, Inductive load, Switch: 2x 5SMX12L2510 Tvj = 25 C Tvj = 125 C 1.8 V Tvj = 25 C 1.5 A Tvj = 125 C 2.5 Tvj = 25 C 92 A Tvj = 125 C 115 A Tvj = 25 C 57 C Tvj = 125 C 98 C Tvj = 25 C 900 ns Tvj = 125 C 1150 ns Tvj = 25 C 54 mJ Tvj = 125 C 92 mJ Characteristic values according to IEC 60747 - 2 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 7 mA 5SLX 12L2510 200 150 180 25 C 125 160 140 Erec [mJ], Irr [A], Qrr [C] 125 C IF [A] 120 100 80 60 100 Irr 75 Qrr 50 VR = 1250 V di/dt = 440 A/s VGE = 15 V Tvj = 125 C L = 1.2 H Erec 40 25 20 0 0 0 0.5 1 1.5 2 2.5 0 50 100 VF [V] Typical forward characteristics Fig. 2 150 VR = 1250 V IF = 100 A di/dt = 440 A/s Tvj = 125 C L = 1.2 H 100 50 0 0 160 -200 140 -600 -50 VR [V] IF [A] IR -800 -100 -1000 Typical reverse recovery characteristics vs. forward current 100 80 Qrr 60 Erec Irr 40 VR -150 -200 0 1000 2000 3000 4000 -1200 -1400 5000 Typical reverse recovery behaviour VR = 1250 V IF = 100 A Tvj = 125 C L = 1.2 H 20 0 0 time [ns] Fig. 3 200 120 -400 Erec [mJ], Qrr [C], Irr [A] Fig. 1 150 IF [A] 100 200 300 400 500 600 700 800 di/dt [A/s] Fig. 4 Typical reverse recovery characteristics vs. di/dt ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1664-02 Feb. 05 page 2 of 3 5SLX 12L2510 Mechanical properties Parameter Unit Dimensions Overall die L x W 12.4 x 12.4 mm exposed LxW front metal 10.38 x 10.38 mm 305 20 m 4 m 1.2 m thickness Metallization 3) 3) front (A) AlSi1 back (K) Al / Ti / Ni / Ag For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline Drawing A (Anode) Note : All dimensions are shown in mm This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1664-02 Feb. 05