128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Jul. 2009 Preliminary 1.0 Release Aug. 2009 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Aug. 2009 1 Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GFR Series DESCRIPTION The Hynix H57V1262GFR series is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. H57V1262GFR series is organized as 4banks of 2,097,152 x 16. H57V1262GFR is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL. Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined design is not restricted by a '2N' rule) FEATURES * Programmable Burst Length and Burst Type * Voltage: VDD and VDDQ 3.3V supply voltage * All device pins are compatible with LVTTL interface - 1, 2, 4, 8 or full page for Sequential Burst * 54 Ball FBGA (Lead or Lead Free Package) - 1, 2, 4 or 8 for Interleave Burst * All inputs and outputs referenced to positive edge of system clock * Data mask function by UDQM, LDQM * Internal four banks operation * Auto refresh and self refresh * 4096 Refresh cycles / 64ms * Programmable CAS Latency; 2, 3 Clocks * Burst Read Single Write operation * Operation temperature HY5V26F(L)F(P)-XX Series: 0 ~ 70oC HY5V26F(L)F(P)-X(I) Series: -40 ~ 85oC This product is in compliance with the directive pertaining of RoHS. ORDERING INFORMATION Part No. Clock Frequency H57V1262GFR-50X 200MHz H57V1262GFR-60X 166MHz H57V1262GFR-70X 143MHz H57V1262GFR-75X 133MHz Organization Interface Package 4Banks x 2Mbits x16 LVTTL 54 Ball FBGA 1. H57V1262GFR-XXC Series: Normal power, Commercial Temp.(0oC to 70oC) 2. H57V1262GFR-XXI Series: Normal power, Industrial Temp. (-40oC to 85oC) 3. H57V1262GFR-XXL Series: Low power, Commercial Temp.(0oC to 70oC) 4. H57V1262GFR-XXJ Series: Low power, Industrial Temp. (-40oC to 85oC) Rev. 1.0 / Aug. 2009 2 Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GFR Series BALL CONFIGURATION 9 8 3 7 2 1 A B C 54 Ball D FBGA E 0.8mm Ball Pitch F G H J <Bottom View> 1 2 3 7 8 9 VSS DQ15 VSSQ A VDDQ DQ0 VDD DQ14 DQ13 VDDQ B VSSQ DQ2 DQ1 DQ12 DQ11 VSSQ C VDDQ DQ4 DQ3 DQ10 DQ9 VDDQ D VSSQ DQ6 DQ5 DQ8 NC VSS E VDD LDQM DQ7 UDQM CLK CKE F /CAS /RAS /WE NC A11 A9 G BA0 BA1 /CS A8 A7 A6 H A0 A1 A10 VSS A5 A4 J A3 A2 VDD < Top View > Rev. 1.0 / Aug. 2009 3 Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GFR Series FUNCTIONAL BLOCK DIAGRAM 2Mbit x 4banks x 16 I/O Synchronous DRAM Internal Row Counter Self refresh logic & timer 2Mx16 BANK 3 CLK CAS Column Active U/LDQM A0 Address Buffers BA1 DQ0 DQ15 Y-Decoder Column Add Counter Bank Select A11 Memory Cell Array Column Pre Decoder WE A1 2Mx16 BANK 0 I/O Buffer & Logic Refresh 2Mx16 BANK 1 Sense AMP & I/O Gate State Machine RAS 2Mx16 BANK 2 X-Decoder X-Decoder X-Decoder X-Decoder CKE CS Row Pre Decoder Row Active Address Register Mode Register Burst Counter CAS Latency Data Out Control Pipe Line Control BA0 Rev. 1.0 / Aug. 2009 4 Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GFR Series BASIC FUNCTIONAL DESCRIPTION Mode Register BA1 BA0 A11 A10 A9 A8 A7 0 0 0 0 OP Code 0 0 A6 A5 A4 CAS Latency A3 A2 BT A1 A0 Burst Length OP Code A9 Write Mode 0 Burst Read and Burst Write 1 Burst Read and Single Write CAS Latency Burst Type A3 Burst Type 0 Sequential 1 Interleave Burst Length A6 A5 A4 CAS Latency 0 0 0 Reserved 0 0 1 0 1 0 1 1 0 1 0 Burst Length A2 A1 A0 1 0 0 0 2 0 0 1 3 0 1 0 4 4 0 Reserved 0 1 1 8 8 1 Reserved 1 0 0 Reserved Reserved Reserved A3 = 0 A3=1 0 1 1 1 2 2 1 1 0 Reserved 1 0 1 Reserved 1 1 1 Reserved 1 1 0 Reserved Reserved 1 1 1 Full Page Reserved Rev. 1.0 / Aug. 2009 5 Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GFR Series ABSOLUTE MAXIMUM RATING Parameter Symbol Rating Unit o 0 ~ 70 C 1 -40 ~ 85oC o 2 o C Ambient Temperature TA Storage Temperature TSTG -55 ~ 125 Voltage on Any Pin relative to VSS VIN, VOUT -1.0 ~ 4.6 V Voltage on VDD relative to VSS VDD, VDDQ -1.0 ~ 4.6 V Short Circuit Output Current IOS 50 mA Power Dissipation PD 1 TSOLDER 260 / 10 Soldering Temperature / Time Note o C C W oC / Sec Notes: 1. Commercial (0 ~ 70oC) 2. Industrial (-40 ~ 85oC) DC OPERATING CONDITION Parameter Symbol Min. Typ Max Unit Note VDD, VDDQ 3.0 3.3 3.6 V 1 Input High Voltage VIH 2.0 3.0 VDDQ + 0.3 V 1, 2 Input Low Voltage VIL -0.3 - 0.8 V 1, 3 Power Supply Voltage Notes: 1. All voltages are referenced to VSS = 0V 2. VIH(max) is acceptable 5.6V AC pulse width with <=3ns of duration. 3. VIL(min) is acceptable -2.0V AC pulse width with <=3ns of duration AC OPERATING TEST CONDITION (VDD=3.30.3V, VSS=0V) Parameter AC Input High / Low Level Voltage Symbol Value Unit VIH / VIL 2.4 / 0.4 V Vtrip 1.4 V Input Rise / Fall Time tR / tF 1 ns Output Timing Measurement Reference Level Voltage Voutref 1.4 V CL 50 pF Input Timing Measurement Reference Level Voltage Output Load Capacitance for Access Time Measurement Note: 1. Vtt = 1.4V O utput R T = 50 Z0 = 50 50pF D C O utput Load C ircuit Rev. 1.0 / Aug. 2009 1 Vtt = 1.4V R T = 500 O utput Note 50pF AC O utput Load C ircuit 6 Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GFR Series CAPACITANCE (f=1MHz, VDD=3.3V) Parameter Pin CLK Input capacitance A0 ~ A11, BA0, BA1, CKE, CS, RAS, CAS, WE, LDQM, UDQM Data input / output capacitance DQ0 ~ DQ15 Symbol Min Max Unit CI1 2.0 4.0 pF CI2 2.0 4.0 pF CI/O 3.0 5.5 pF DC CHARACTERISTICS I Parameter Symbol Min Max Unit Note Input Leakage Current ILI -1 1 uA 1 Output Leakage Current ILO -1 1 uA 2 Output High Voltage VOH 2.4 - V IOH = -2mA Output Low Voltage VOL - 0.4 V IOL = +2mA Notes: 1. VIN = 0 to 3.3V, All other balls are not tested under VIN =0V 2. DOUT is disabled, VOUT=0 to 3.6 Rev. 1.0 / Aug. 2009 7 Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GFR Series DC CHARACTERISTICS II Parameter Symbol Speed Test Condition Burst length=1, One bank active 5 6 7 H 100 80 70 70 Unit Note Operating Current IDD1 Precharge Standby Current IDD2P CKE VIL(max), tCK = 15ns 2 mA in Power Down Mode IDD2PS CKE VIL(max), tCK = 2 mA tRC tRC(min), IOL=0mA mA 1 CKE VIH(min), CS VIH(min), tCK = 15ns Precharge Standby Current IDD2N Input signals are changed one time 18 during 2clks. in Non Power Down Mode mA All other pins VDD-0.2V or 0.2V IDD2NS CKE VIH(min), tCK = 15 Input signals are stable. Active Standby Current IDD3P CKE VIL(max), tCK = 15ns 5 in Power Down Mode IDD3PS CKE VIL(max), tCK = 5 mA CKE VIH(min), CS VIH(min), tCK = 15ns Active Standby Current IDD3N Auto Refresh Current mA All other pins VDD-0.2V or 0.2V IDD3NS rent IDD4 IDD5 CKE VIH(min), tCK = 35 Input signals are stable. tCK tCK(min), IOL=0mA All banks active tRC tRC(min), All banks active Normal Self Refresh Current 40 during 2clks. in Non Power Down Mode Burst Mode Operating Cur- Input signals are changed one time IDD6 CKE 0.2V Low power 120 100 100 100 mA 1 210 200 190 190 mA 2 2 mA 800 uA 3 Notes: 1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open 2. Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II 3. H57V1262GTR-XXC Series: Normal Power H57V1262GTR-XXL Series: Low Power Rev. 1.0 / Aug. 2009 8 Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GFR Series AC CHARACTERISTICS I (AC operating conditions unless otherwise noted) 5 Sym- Parameter bol 6 7 H Min Max Min Max Min Max Min Max 7.0 Unit Note CL = 3 tCK3 5.0 CL = 2 tCK2 - Clock High Pulse Width tCHW 1.75 - 2.0 - 2.0 - 2.5 - ns 1 Clock Low Pulse Width tCLW 1.75 - 2.0 - 2.0 - 2.5 - ns 1 CL = 3 tAC3 - 4.5 - 5.4 - 5.4 - 5.4 ns CL = 2 tAC2 - - - - - - - 6.0 ns Data-out Hold Time tOH 2.0 - 2.0 - 2.5 - 2.7 - ns Data-Input Setup Time tDS 1.5 - 1.5 - 1.5 - 1.5 - ns 1 Data-Input Hold Time tDH 0.8 - 0.8 - 0.8 - 0.8 - ns 1 Address Setup Time tAS 1.5 - 1.5 - 1.5 - 1.5 - ns 1 Address Hold Time tAH 0.8 - 0.8 - 0.8 - 0.8 - ns 1 CKE Setup Time tCKS 1.5 - 1.5 - 1.5 - 1.5 - ns 1 CKE Hold Time tCKH 0.8 - 0.8 - 0.8 - 0.8 - ns 1 Command Setup Time tCS 1.5 - 1.5 - 1.5 - 1.5 - ns 1 Command Hold Time tCH 0.8 - 0.8 - 0.8 - 0.8 - ns 1 CLK to Data Output in Low-Z Time tOLZ 1.0 - 1.0 - 1.5 - 1.5 - ns System Clock Cycle Time Access Time From Clock 1000 6.0 - 1000 - 1000 7.5 10 1000 ns ns CLK to Data Output CL = 3 tOHZ3 - 4.5 - 5.4 - 5.4 - 5.4 ns in High-Z Time CL = 2 tOHZ2 - - - - - - - 6.0 ns 2 Notes: 1. Assume tR / tF (input rise and fall time) is 1ns. If tR & tF > 1ns, then [(tR+tF)/2-1]ns should be added to the parameter. 2. Access time to be measured with input signals of 1V/ns edge rate, from 0.8V to 0.2V. If tR > 1ns, then (tR/2-0.5)ns should be added to the parameter. Rev. 1.0 / Aug. 2009 9 Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GFR Series AC CHARACTERISTICS II (AC operating conditions unless otherwise noted) Parameter Symbol 5 6 7 H Min Max Min Max Min Max Min Max Uni t RAS Cycle Time Operation tRC 55 - 60 - 63 - 63 - ns RAS Cycle Time Auto Refresh tRRC 55 - 60 - 63 - 63 - ns RAS to CAS Delay tRCD 15 - 18 - 20 - 20 - ns RAS Active Time tRAS 38.7 100K 42 100K 42 100K 42 120 K ns RAS Precharge Time tRP 15 - 18 - 20 - 20 - ns RAS to RAS Bank Active Delay tRRD 10 - 12 - 14 - 15 - ns CAS to CAS Delay tCCD 1 - 1 - 1 - 1 - CLK Write Command to Data-In Delay tWTL 0 - 0 - 0 - 0 - CLK Data-in to Precharge Command tDPL 2 - 2 - 2 - 2 - CLK Data-In to Active Command tDAL DQM to Data-Out Hi-Z tDQZ 2 - 2 - 2 - 2 - CLK DQM to Data-In Mask tDQM 0 - 0 - 0 - 0 - CLK MRS to New Command tMRD 2 - 2 - 2 - 2 - CLK Precharge to Data Output High-Z CL = 3 tPROZ3 3 - 3 - 3 - 3 - CLK CL = 2 tPROZ2 - - - - - - 2 - CLK Power Down Exit Time tDPE 1 - 1 - 1 - 1 - CLK Self Refresh Exit Time tSRE 1 - 1 - 1 - 1 - CLK Refresh Time tREF - 64 - 64 - 64 - 64 ms Not e tDPL + tRP 1 Note: 1. A new command can be given tRRC after self refresh exit. Rev. 1.0 / Aug. 2009 10 Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GFR Series COMMAND TRUTH TABLE Command CKEn-1 CKEn CS RAS CAS WE DQM Mode Register Set H X L L L L X OP code H X X X No Operation H X X X L H H H Bank Active H X L L H H X H X L H L H X ADDR A10/AP BA RA Read Note V L CA Read with Autoprecharge V H Write L H X L H L L X CA Write with Autoprecharge Precharge All Banks H X L L H L X Precharge selected Bank Burst Stop H DQM H Auto Refresh H H L L L Burst-Read-Single-WRITE H X L L Entry H L L X H Exit L H H L H H L X L V X V X H X X L L X A9 ball High (Other balls OP code) L L H X X X X MRS Mode X X L H H H H X X X L H H H H X X X L H H H H X X X L V V V L Precharge power down H X X X Self Refresh1 Entry V H X X Exit Entry L H H L Clock Suspend Exit Rev. 1.0 / Aug. 2009 L X H X X X X 11 Synchronous DRAM Memory 128Mbit (8Mx16bit) H57V1262GFR Series PACKAGE INFORMATION 54 Ball FBGA 8.0mm x 8.0mm A1 INDEX MARK 8.00 Typ. 6.4 Unit [mm] 0.80.1 0.80 Typ. Bottom View 8.00 Typ. 0.45 +/- 0.05 6.4 0.35 +0.025/- 0.05 0.8 0.1 1.60 Rev. 1.0 / Aug. 2009 0.80 Typ. 1.0 max 12