ECH8601M Ordering number : EN1174A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8601M General-Purpose Switching Device Applications Features * * * * Low ON-resistance 2.5V drive Common-drain type Protection diode in * * * Built-in gate protection resistor Best suited for LiB charging and discharging switch Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) 24 ID IDP Drain Current (Pulse) Allowable Power Dissipation V 12 V 8 A PW10s, duty cycle1% 60 A When mounted on ceramic substrate (1000mm2x0.8mm) 1unit 1.5 W Total Dissipation PD PT 1.6 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C When mounted on ceramic substrate (1000mm2x0.8mm) Package Dimensions Product & Package Information unit : mm (typ.) 7011A-003 * Package : ECH8 * JEITA, JEDEC :* Minimum Packing Quantity : 3,000 pcs./reel ECH8601M-TL-H Top View Packing Type : TL 0.25 2.9 Marking 0.15 8 5 TL 2.3 4 1 0.65 0.9 0.25 Lot No. TL Electrical Connection 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.07 2.8 0 to 0.02 Bottom View 8 7 6 5 1 2 3 4 SANYO : ECH8 http://semicon.sanyo.com/en/network 50112 TKIM/72308PE TIIM TC-00001533 No. A1174-1/7 ECH8601M Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Conditions Ratings min. typ. Unit max. V(BR)DSS IDSS ID=1mA, VGS=0V VDS=20V, VGS=0V 24 V IGSS VGS(off) | yfs | VGS=8V, VDS=0V VDS=10V, ID=1mA 0.5 VDS=10V, ID=4A 3.1 5.3 RDS(on)1 ID=4A, VGS=4.5V 13.5 17 23 m RDS(on)2 ID=4A, VGS=4.0V 14 18 24 m RDS(on)3 ID=4A, VGS=3.1V 14.5 20 30 m RDS(on)4 ID=2A, VGS=2.5V 16 24 35 m 1 A 10 A 1.3 V S Turn-ON Delay Time td(on) 300 ns Rise Time 1000 ns Turn-OFF Delay Time tr td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=10V, VGS=4.5V, ID=8A IS=8A, VGS=0V 3000 ns 1800 ns 7.5 nC 1.5 nC 2.0 nC 0.8 1.2 V Switching Time Test Circuit 4V 0V VDD=10V VIN ID=4A RL=2.5 VIN VOUT D PW=10s D.C.1% Rg G ECH8601M P.G 50 S Rg=1k Ordering Information Device ECH8601M-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb-Free and Halogen Free No. A1174-2/7 ECH8601M V 2. 5V VDS=10V 8 7 6 5 4 VGS=1.5V 3 1 1 0 0 0.2 0.3 0.4 0 0.5 Drain-to-Source Voltage, VDS -- V ID=2A Static Drain-to-Source On-State Resistance, RDS(on) -- m 4A 30 25 20 15 10 5 0 2 4 6 8 Ta= C --25 C 75 3 25 2 2 3 5 7 C 1.0 2 3 5 Drain Current, ID -- A 7 10 IT13575 5 VDD=10V VGS=4.5V td(off) 3 tf 2 1000 tr 7 5 td(on) 3 A =4.0 V, I D 0 . 4 = VGS 15 10 --40 --20 2 0 20 40 60 80 100 120 140 160 IT13856 IS -- VSD VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Diode Forward Voltage, VSD -- V SW Time -- ID 7 20 0.01 7 5 3 2 0.001 0.1 1.0 IT13576 VGS -- Qg 4.5 Gate-to-Source Voltage, VGS -- V 1.0 0.1 25 10 7 5 3 2 Source Current, IS -- A 7 5 .0A =2 ID , A 4.0 .5V =2 I D= , S 0A VG 1V =4. =3. , ID V S 5 VG =4. V GS 30 Ambient Temperature, Ta -- C VDS=10V 10 2.5 IT13573 35 IT13574 | yfs | -- ID 2 2.0 40 5 --60 10 Gate-to-Source Voltage, VGS -- V 1.5 RDS(on) -- Ta 45 Ta=25C 35 1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 40 0.5 IT13805 Ta= 75 C 25 C --25 C 0.1 0 Static Drain-to-Source On-State Resistance, RDS(on) -- m 4 2 2 Forward Transfer Admittance, | yfs | -- S 5 25C 3 6 --25C 7 Ta=7 5C Drain Current, ID -- A Drain Current, ID -- A 8 Switching Time, SW Time -- ns ID -- VGS 9 3 .1 4.5 V 10.0 V 9 4.0 V ID -- VDS 10 VDS=10V ID=8A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 100 0.1 0 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT13857 0 1 2 3 4 5 6 Total Gate Charge, Qg -- nC 7 8 IT13858 No. A1174-3/7 ECH8601M ASO 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 IDP=60A PW10s 10 0 s ID=8A Operation in this area is limited by RDS(on). 1m s 10 10 DC PD -- Ta 1.8 Allowable Power Dissipation, PD -- W Drain Current, ID -- A 2 ms 0m s op era 0.1 7 Ta=25C 5 Single pulse 3 on ceramic substrate 2 When mounted (1000mm20.8mm) 1unit 0.01 2 3 5 7 1.0 2 3 0.01 2 3 5 7 0.1 tio n When mounted on ceramic substrate (1000mm20.8mm) 1.6 1.5 1.4 1.2 1.0 To t 0.8 1u al Di ss ni t ip ati on 0.6 0.4 0.2 0 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT13721 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT13722 No. A1174-4/7 ECH8601M Embossed Taping Specification ECH8601M-TL-H No. A1174-5/7 ECH8601M Outline Drawing ECH8601M-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1174-6/7 ECH8601M Note on usage : Since the ECH8601M is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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