S10317-01 - Hamamatsu Photonics K.K.

Photo IC for laser beam synchronous detection

Low voltage operation (3.3 V)

S10317 series S11257 series

www.hamamatsu.com 1

Low voltage operation (3.3 V)

High sensitivity

Current ampliﬁ er gain: 20 times (S10317, S11257-02DT)

6 times (S10317-01, S11257-01DT)

Digital output

Small package

Suitable for lead-free solder reﬂ ow

photosensitive area: 2.84 × 0.5 mm (S10317 series)

2.84 × 0.25 mm (S11257 series)

Print start timing detection for laser printers, digital

copiers, fax machines, etc.

Absolute maximum ratings

Parameter Symbol Condition Value Unit

Supply voltage Vcc Ta=25 °C -0.5 to +7 V

Power dissipation*1PTa=25 °C 300 mW

Output voltage*2Vo Ta=25 °C -0.5 to +7 V

Output current Io Ta=25 °C 5 mA

Ro terminal current IRO Ta=25 °C 3mA

Operating temperature Topr -25 to +80 °C

Storage temperature Tstg -40 to +85 °C

Reﬂ ow soldering conditions*3Tsol Peak temperature 240 °C, 1 time -

*1: Power dissipation decreases at a rate of 4 mW/°C above Ta=25 °C.

*2: Vcc=+0.5 V or less

*3: JEDEC level 5a

Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the

product within the absolute maximum ratings.

The S10317/S11257 series photo IC use a high-speed PIN photodiode designed for laser beam synchronous detec-

tion. They operate at a low voltage (3.3 V) compatible with low-voltage peripheral components mounted on the same

PC board. Two types of current ampliﬁ ers are available with a gain of 6 times (S10317-01, S11257-01DT) and 20 times

(S10317, S11257-02DT) that can be selected according to laser power to be used. HAMAMATSU also provides a 5 V op-

eration type (S9703 series) and dual-element Si PIN photodiode types (S9684 series, S11282-01DS).

Features Applications

Photo IC for laser beam synchronous detection

S10317/S11257 series

Electrical and optical characteristics

(Ta=25 °C, λ=780 nm, Vcc=3.3 V, Ro=5.1 kΩ, light incident angle=normal line direction ±0°,

unless otherwise noted)

Parameter Symbol Condition Min. Typ. Max. Unit

Current consumption Icc No input - 0.7 1.5 mA

High level output voltage VOH IOH=4 mA 2.9 - - V

Low level output voltage VOL IOL=4 mA*4- - 0.3 V

Threshold input power S10317, S11257-02DT PTH 14 19 24 μW

S10317-01, S11257-01DT

49.5 62 74.5

H→L propagation delay

time

S10317, S11257-02DT tPHL PI=57 μW

(S10317, S11257-02DT)

PI=186 μW

(S10317-01, S11257-01DT)

Duty ratio 1:1

CL=15 pF*5

- 130 250

S10317-01, S11257-01DT

- 100 200

L→H propagation delay

time

S10317, S11257-02DT tPLH - 200 300

S10317-01, S11257-01DT

- 150 250

Rise time tr - 4 7 ns

Fall time tf - 4 7 ns

Maximum input power PI max. - - PTH × 8 μW

*4: Input power PI=57 μW (S10317, S11257-02DT), 186 μW (S10317-01, S11257-01DT)

*5: Measured with a pulse-driven laser diode. Input light-pulse rise time and fall times are 1 ns or less.

Spectral response

Wavelength (nm)

0.5

0.3

0.2

0.1

Photosensitivity (A/W)

0.4

(Typ. Ta=25 °C)

200 400 600 800 1000 1200

50%

Input light

level

Output

100%

90%

1.5 V

10%

tPHL

tf tr

tPLH

KPICC0112EA

KPICB0166EA

Photo IC for laser beam synchronous detection

S10317/S11257 series

Vcc

0.1 µF 3.3 V

Current

amplifier

External

gain resistance

Photodiode

Vref

GND

KPICC0127EA

Block diagram

Function

These products integrate a photodiode chip and an IC chip into the same package. The photodiode chip is internally connected to the IC

chip as shown in the block diagram. The products should be used with terminal Ro connected to an external gain resistance Ro.

A photocurrent is generated when a laser beam enters the photodiode. This photocurrent is fed to the input terminal of the IC and, after

being ampliﬁ ed by the current ampliﬁ er, ﬂ ows to the external gain resistance. At this time, voltages VRO at terminal Ro is given by the

following expression.

VRO=A × S × PI × Ro [V] ·········· (1)

A: Current ampliﬁ er gain (S10317, S11257-02DT: 20 times, S10317-01, S11257-01DT: 6 times)

S: Photodiode sensitivity [A/W] (approx. 0.44 A/W at 780 nm)

PI: Input power [W]

Ro: External gain resistance [Ω]; usable range 2 kΩ to 10 kΩ

VRO is input to the internal comparator and compared with the internal reference voltage Vref (approx. 0.8 V) so the output Vo is “High”

when VRO < Vref or “Low” when VRO > Vref.

In equation (1), VRO should not exceed 8 times of the voltage calculated from the threshold light level.

(Monitoring VRO shows that it is limited to about 2 V (with respect to GND) by the voltage limiting circuit. Keep this in mind when

monitoring.)

Photo IC for laser beam synchronous detection

S10317/S11257 series

Dimensional outline (unit: mm)

KPICA0070ED

0.66

3.2 ± 0.2

(Including burr)

3.0*1.0 ± 0.4 1.0 ± 0.4 0.05

2.4

Mirror area

range

0.15

2.8

2.9

3.0*0.45 ± 0.3

3.0*

3.4

Mirror area

range

3.8

3.9

4.0*

4.2 ± 0.2

5.0 ± 0.3

0.45 ± 0.3

0.35

0.75

1.3

0.8 0.8 0.8

0.1 ± 0.1

0.8

(9 ×) 0.3

(9 ×) 0.4

0.5

Photosensitive

surface Tolerance unless otherwise noted: ±0.1, ±2°

Shaded area indicates burr.

Chip position accuracy with respect to

package dimensions marked *

X, Y≤±0.2, θ≤±2°

Packing: stick (100 pcs/stick)

Tape-and-reel shipment is available (S10317-30/-31)

Vcc

OUT

GND

Photosensitive

surface

2.84

0.15

Center of

photosensitive area

0.54 ± 0.2

3.2 ± 0.2

(Including burr)

3.0*1.0 ± 0.4 1.0 ± 0.4

0.05

2.4

Mirror area

range

0.15

2.8

2.9

3.0*0.45 ± 0.3

3.0*

3.4

Mirror area

range

3.8

3.9

4.0*

4.2 ± 0.2

5.0 ± 0.3

0.45 ± 0.3

0.35

0.75

1.3

0.8 0.8 0.8

0.1 ± 0.1

0.8

(9 ×) 0.3

(9 ×) 0.4

0.25

Photosensitive

surface

Tolerance unless otherwise noted: ±0.1, ±2°

Shaded area indicates burr.

Values in parentheses indicate reference value.

Chip position accuracy with respect to

package dimensions marked *

X, Y≤±0.2, θ≤2°

Packing: reel (2000 pcs/reel)

Vcc

OUT

GND

Photosensitive

surface

2.84

0.15 ± 0.2

(0.3)

Center of

photosensitive area

S10317 series

S11257 series

KPICA0070ED

KPICA0089EB

Cat. No. KPIC1067E04 Feb. 2012 DN

Photo IC for laser beam synchronous detection

S10317/S11257 series

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866

Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact

us for the delivery specification sheet to check the latest information.

ype numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or

a suffix "(Z)" which means developmental specifications.

he product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product

use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

Information described in this material is current as of February, 2012.

Recommended temperature proﬁ le of reﬂ ow soldering(typical example)

KPICB0164EA

Preheat time

70 to 90 s

Soldering time

40 s max.

190 °C

Time

Temperat ure

240 °C max.

220 °C

170 °C

· After unpacking, store this device in an environment at a temperature of 5 to 25 °C and a humidity below 60%, and perform reﬂ ow

soldering on this device within 24 hours.

· Thermal stress applied to the device during reﬂ ow soldering differs depending on the PC boards and reﬂ ow oven being used.

· When setting the reﬂ ow conditions, make sure that the reﬂ ow soldering process does not degrade device reliability. A sudden temperature

rise and cooling may be the cause of trouble, so make sure that the temperature change is within 4 °C per second.