Data Sheet Switching Diode DAN217W Applications Rectifying small power Dimensions(Unit : mm) Land size figure(Unit : mm) 1.0 0.5 1.3 0.7 0.5 0.7 0.7 Features Small mold type.(EMD3) 0.6 0.6 EMD3 Structure Construction Silicon epitaxial Taping dimensions (Unit : mm) 1.550.1 1.5 0.1 00 2.00.05 0.30.1 0.50.1 8.00.2 00.1 1.80.1 5.50.2 1.80.2 3.50.05 1.750.1 4.00.1 0.90.2 Absolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive) Reverse voltage (DC) VR Forward current (Single) IFM Average rectified forward current Io Surge current (t=1us) Isurge Power dissipation Pd Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25C) Parameter Symbol Forward voltage VF Reverse current IR Capacitance between terminals Ct Reverse recovery time trr www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. Limits 80 80 300 100 4 150 150 55 to 150 Min. - Typ. - 1/2 Unit V V mA mA A mW C C Max. 1.2 0.1 3.5 4 Unit V A pF ns Conditions IF=100mA VR=70V VR=6V , f=1MHz VR=6V , IF=5mA , RL=50 2011.06 - Rev.B Data Sheet DAN217W Electrical characteristics curves Ta=125 Ta=150C 10 100000 Ta=125 Ta=25 Ta=150C Ta=-25 1 0.1 Ta=75 1000 Ta=25 100 10 Ta=-25 1 200 400 600 800 1000 1200 1400 0 20 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 40 60 80 100 0 120 REVERSE CURRENT:IR(nA) 890 880 AVE:888.3 870 160 140 120 100 80 60 AVE:20.90 40 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 AVE:0.595 Ct DISPERSION MAP 10 REVERSE RECOVERY TIME:trr(ns) 2 1cyc Ifsm 8.3ms 10 5 AVE:3.9 0 0.8 IR DISPERSION MAP 15 Ta=25C VR=6V IF=10mA 1.8 RL=100 n=10pcs 1.6 1.4 1.2 AVE:1.489 1 Ifsm 8.3ms 8.3ms 1cyc 5 0 1 IFSM DISPERSION MAP 5 0 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 100 100 9 Rth(j-c) Mounted on epoxy board 10 IM=1m IF=10m time 1ms 0.001 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/2 8 7 6 5 4 3 AVE:1.60 AVE:6.48 2 1 300us 1 ELECTROSTATIC DISCHARGE TEST ESD(KV) TRANSIENT THAERMAL IMPEDANODE:Rth(C/W) PEAK SURGE FORWARD CURRENT:I FSM(A) Rth(j-a) t 100 10 1000 Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP 10 20 Ta=25 C f=1MHz VR=0.5V 0.9 20 VF DISPERSION MAP 20 15 1 Ta=25C VR=80V n=30pcs 180 900 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 200 Ta=25C VF=100mA n=30pcs 910 5 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 920 FORWARD VOLTAGE:V F(mV) 1 0.1 0.1 0 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75 PEAK SURGE FORWARD CURRENT:I FSM(A) 100 0.01 PEAK SURGE FORWARD CURRENT:I FSM(A) f=1MH 10000 REVERSE CURRENT:IR(nA) FORWARD CURRENT:I F(mA) 1000 100 1000 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP 2011.06 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A