DATA SH EET
Preliminary specification
Supersedes data of 2000 Jan 04 2000 Apr 19
DISCRETE SEMICONDUCTORS
BGD814
CATV amplifier module
n
dbook, halfpage
M3D252
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2000 Apr 19 2
Philips Semiconductors Preliminary specification
CATV amplifier module BGD814
FEATURES
•Excellent linearity
•Extremely low noise
•Excellent return loss properties
•Silicon nitride passivation
•Rugged construction
•Gold metallization ensures excellent reliability.
APPLICATIONS
•CATV systems operating in the 40 to 870 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
PINNING - SOT115J
PIN DESCRIPTION
1 input
2 and 3 common
5+V
B
7 and 8 common
9 output
handbook, halfpage
789
2351
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Gppower gain f = 45 MHz 19.7 20.3 dB
f = 870 MHz 20.5 21.5 dB
Itot total current consumption (DC) VB= 24 V 380 410 mA
SYMBOL PARAMETER MIN. MAX. UNIT
VBsupply voltage −30 V
ViRF input voltage −70 dBmV
Tstg storage temperature −40 +100 °C
Tmb operating mounting base temperature −20 +100 °C
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2000 Apr 19 3
Philips Semiconductors Preliminary specification
CATV amplifier module BGD814
CHARACTERISTICS
Bandwidth 40 to 870 MHz; VB= 24 V; Tmb =35°C; ZS=Z
L=75Ω.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Gppower gain f = 45 MHz 19.7 −20.3 dB
f = 870 MHz 20.5 −21.5 dB
SL slope straight line f = 45 to 870 MHz; note 1 0.5 −1.5 dB
FL flatness straight line f = 45 to 100 MHz −−±0.25 dB
f = 100 to 800 MHz −0.7 −+0.3 dB
f = 800 to 870 MHz −0.4 −0.0 dB
s11 input return losses f = 45 to 80 MHz 25 −−dB
f = 80 to 160 MHz 22 −−dB
f = 160 to 320 MHz 19 −−dB
f = 320 to 550 MHz 17 −−dB
f = 550 to 650 MHz 17 −−dB
f = 650 to 750 MHz 16 −−dB
f = 750 to 870 MHz 15 −−dB
f = 870 to 914 MHz 12 −−dB
s22 output return losses f = 45 to 80 MHz 24 −−dB
f = 80 to 160 MHz 23 −−dB
f = 160 to 320 MHz 18 −−dB
f = 320 to 550 MHz 18 −−dB
f = 550 to 650 MHz 17 −−dB
f = 650 to 750 MHz 16 −−dB
f = 750 to 870 MHz 16 −−dB
f = 870 to 914 MHz 13 −−dB
s21 phase response f = 50 MHz −45 −+45 deg
CTB composite triple beat 79 chs flat; Vo= 44 dBmV; fm= 547.25 MHz −−−67 dB
112 chs flat; Vo= 44 dBmV; fm= 745.25 MHz −−−61 dB
132 chs flat; Vo= 44 dBmV; fm= 859.25 MHz −−−57 dB
112 chs;fm= 547.25 MHz;Vo= 50.2 dBmVat
745 MHz; note 2 −−−56 dB
79 chs; fm= 331.25 MHz; Vo= 47.3 dBmV at
547 MHz; note 3 −−−65 dB
Xmod cross modulation 79 chs flat; Vo= 44 dBmV; fm= 55.25 MHz −−−66 dB
112 chs flat; Vo= 44 dBmV; fm= 55.25 MHz −−−62.5 dB
132 chs flat; Vo= 44 dBmV; fm= 55.25 MHz −−−61 dB
112 chs;fm= 745.25 MHz;Vo= 50.2 dBmVat
745 MHz; note 2 −−−57 dB
79 chs; fm= 445.25 MHz; Vo= 47.3 dBmV at
547 MHz; note 3 −−−66 dB
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Philips Semiconductors Preliminary specification
CATV amplifier module BGD814
Notes
1. Slope straight line is defined as gain at 870 MHz against gain at 45 MHz.
2. Tilt = 10.2 dB (55 to 745 MHz).
3. Tilt = 7.3 dB (55 to 547 MHz).
4. fp= 55.25 MHz; Vp= 44 dBmV; fq= 805.25 MHz; Vq= 44 dBmV; measured at fp+f
q= 860.5 MHz.
5. Measured according to DIN45004B: fp= 851.25 MHz; Vp=V
o
; fq= 858.25 MHz; Vq=V
o−6 dB; fr= 860.25 MHz;
Vr=V
o−6 dB; measured at fp+f
q−f
r= 849.25 MHz.
6. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 35 V.
CSO composite second
order distortion 79 chs flat; Vo= 44 dBmV; fm= 548.5 MHz −−−68 dB
112 chs flat; Vo= 44 dBmV; fm= 746.5 MHz −−−63 dB
132 chs flat; Vo= 44 dBmV; fm= 860.5 MHz −−−59 dB
112 chs; fm= 210 MHz; Vo= 50.2 dBmV at
745 MHz; note 2 −−−56 dB
79 chs; fm= 210 MHz; Vo= 47.3 dBmV at
547 MHz; note 3 −−−64 dB
d2second order distortion note 4 −−−70 dB
Vooutput voltage dim =−60 dB; note 5 64 −−dBmV
CTB compression = 1 dB; 132 chs flat;
f = 859.25 MHz 48 −−dBmV
CSO compression = 1 dB; 132 chs flat;
f = 860.5 MHz 50 −−dBmV
F noise figure f = 50 MHz −−5.5 dB
f = 550 MHz −−5.5 dB
f = 750 MHz −−6.5 dB
f = 870 MHz −−7.5 dB
Itot total current
consumption (DC) note 6 380 395 410 mA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
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2000 Apr 19 5
Philips Semiconductors Preliminary specification
CATV amplifier module BGD814
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200 1000
−50
−60
−80
−90
−70
52
48
40
36
44
400 600 800
MLD345
(1)
(2)
(3)
(4)
Fig.2 Composite triple beat as a function of
frequency under tilted conditions.
ZS=Z
L=75Ω; VB= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. 3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200 1000
−40
−50
−70
−80
−60
52
48
40
36
44
400 600 800
MLD346
(1)
(2)
(3)
(4)
Fig.3 Crossmodulationasafunctionoffrequency
under tilted conditions.
ZS=Z
L=75Ω; VB= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. 3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−50
−60
−80
−90
−70
52
48
40
36
44
400 600 800
MLD347
(1)
(2)
(3)
(4)
Fig.4 Composite second order distortion as a
function of frequency under tilted conditions.
ZS=Z
L=75Ω; VB= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. 3 σ.(3) Typ.
(4) Typ. −3σ.
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2000 Apr 19 6
Philips Semiconductors Preliminary specification
CATV amplifier module BGD814
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200 1000
−40
−50
−70
−80
−60
52
48
40
36
44
400 600 800
MLD348
(1)
(2)
(3)
(4)
Fig.5 Composite triple beat as a function of
frequency under tilted conditions.
ZS=Z
L=75Ω; VB= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. 3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200 1000
−40
−50
−70
−80
−60
52
48
40
36
44
400 600 800
MLD349
(1)
(2)
(3)
(4)
Fig.6 Crossmodulationasafunctionoffrequency
under tilted conditions.
ZS=Z
L=75Ω; VB= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. 3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−50
−60
−80
−90
−70
52
48
40
36
44
400 600 800
MLD350
(1)
(2)
(3)
(4)
Fig.7 Composite second order distortion as a
function of frequency under tilted conditions.
ZS=Z
L=75Ω; VB= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. 3 σ.(3) Typ.
(4) Typ. −3σ.
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2000 Apr 19 7
Philips Semiconductors Preliminary specification
CATV amplifier module BGD814
PACKAGE OUTLINE
UNIT A2
max. cee
1q
Q
max. q1q2U1
max. U2W
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 20.8 9.1 0.51
0.38 0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8 4.15
3.85 2.4 38.1 25.4 10.2 4.2 44.75 8 0.25 0.1 3.8
bF
p
6-32
UNC
yw
S
DIMENSIONS (mm are the original dimensions)
SOT115J
0 5 10 mm
scale
A
max. D
max. L
min.
E
max. Z
max.
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J
D
U1q
q2
q1
b
F
S
A
Z p
E
A2
L
c
d
Q
U2
M
w
78923
We
e
1
5
p
1
d
max.
yMB
yMB
B
99-02-06
yMB
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Philips Semiconductors Preliminary specification
CATV amplifier module BGD814
DATA SHEET STATUS
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DATA SHEET STATUS PRODUCT
STATUS DEFINITIONS (1)
Objective specification Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification Production This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseor atany otherconditionsabovethose giveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofanyof these products,conveys nolicence or title
under any patent, copyright, or mask work right to these
products,and makes norepresentationsor warrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
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Philips Semiconductors Preliminary specification
CATV amplifier module BGD814
NOTES
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2000 Apr 19 10
Philips Semiconductors Preliminary specification
CATV amplifier module BGD814
NOTES
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2000 Apr 19 11
Philips Semiconductors Preliminary specification
CATV amplifier module BGD814
NOTES
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© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Internet: http://www.semiconductors.philips.com
2000 69
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