Preliminary Product Brief
April 2003
AGR09060E
60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09060E is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for cellular
band, code-division multiple access (CDMA), global
system for mobile communication (GSM), enhanced
data for global evolution (EDGE), and time-division
multiple access (TDMA) single and multicarrier class
AB wireless base station amplifier applications.This
device is manufactured on an advanced LDMOS
technology, offering state-of-the-art performance,
reliability, and best-in-class thermal resistance. Pack-
aged in an industry-standard package and capable of
delivering a minimum output power of 60 W, it is ide-
ally suited for today’s RF power amplifier applica-
tions.
Figure 1. Available Packages
Features
■Typical performance ratings are for IS-95 CDMA,
pilot, sync, paging, traffic codes 8—13:
— Output powe r (POUT): 14 W.
— Power gain: 17.5 dB.
— Efficiency: 28 %.
— Adjac ent ch anne l powe r ratio (ACPR) for
30 kHz bandwidth (BW):
(750 kHz offset: –45 dBc)
(1. 98 MHz offset: –60 dBc).
— Return loss: 10 dB.
■High-reliability gold-metalization process.
■High gain, efficiency, and linearity.
■Integrated ESD protection.
■Si LDMOS.
■Industry-standard packages.
■60 W minimum output power.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs both a human-body model (HBM) and a charged-device
model (CDM) qualification requirement in order to determine
ESD-susceptibility limits and protection design evaluation. ESD
voltage thresholds are dependent on the circuit parameters used
in each of the models, as defined by JEDEC’s JESD22-A114
(HBM) and JESD22-C101 (CDM ) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR09060EU AGR09060EF
Parameter Sym Value Unit
Therma l Resistance,
Junction to Case:
AGR09060EU
AGR09060EFRθJC
RθJC 1.1
TBD °C/W
°C/W
Parameter Sym Value Unit
Drain-source V oltage VDSS 65 Vdc
Gate-source Voltage VGS –0.5, 15 Vdc
Total Dissipation at TC = 25 °C:
AGR09060EU
AGR09060EF PD
PD159
TBD W
W
Derate Above 25 °C:
AGR09060EU
AGR09060EF —
—TBD
TBD W/°C
W/°C
Operating Junction Tempera-
ture TJ200 °C
S torage Temperature Range TSTG –65, 150 °C
Device Minimum
Threshold Class
HBM CDM HBM CDM
AGR09060E — — 1 TBD
Copyright © 2003 Agere Systems Inc.
All Rights Reserved
April 2003
PB03-084RFPP (Replaces PB03-074RFPP)
Agere Systems Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application.
Agere, Agere Systems, and the Agere logo are trademarks of Agere Systems Inc.
For additional informatio n, co nta ct you r Agere Systems Account Manager or the following:
INTERNET: http://www.agere.com
E-MAIL: docmaster@agere.com
N. AMERICA: Agere Systems Inc ., Leh ig h Valley Cen t ral Ca mpus, Room 10A-30 1C , 1110 Ame rican Parkway NE, Allentown, PA 18109-9138
1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610 -712-4106)
ASIA: Agere Systems Hong Kon g L td., Suites 3 20 1 & 321 0-12, 32/F, To wer 2, The Gateway, Harbour City, Kowloon
Tel. (852) 3129-2000, FAX (852) 3129-2020
CHINA: (86) 21-5 047-12 12 ( Sh anghai) , (86) 755-25881122 (Shenzhen)
JAPAN: (81) 3-5421-1600 (Tokyo), KOREA: (82) 2- 767-18 50 (Seoul), SINGAPORE: (65) 6778 - 8833 , TAIWAN: (886) 2-2725-5858 (Taipei)
EUROPE: Tel. (44) 1344 296 400
60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET April 2003
AGR09060E Preliminary Product Brief
Ordering Information
Device Code Package Availability Comcode
AGR09060E AGR09060EU (surface-mount) Tape and Reel 700044003
AGR09060EF (flanged) Tray 700044002
