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www.excelitas.com

e Excelitas C30737 series silicon APDs provide high responsivity between 500 nm and 1000 nm,
as well as extremely fast rise times at all wavelengths with a frequency response above 1 GHz. e
C30724 as a low gain APD can be operated at xed voltage without the need of a temperature
compensation.
Standard versions are available in two active area sizes: 0.23 and 0.5 mm diameter. ey are
oered in the traditional hermetic TO housing (“E”), in cost eective plastic through-hole T-1¾
(TO-like, “P”) packages, and in leadless ceramic carrier (LCC, “L”) package for surface mount
technology. All listed varieties are ideally suited for high-volume, low cost applications.
Customization of these APDs is oered to meet your design challenges. Operation voltage
selection and binning or specic wavelength ltering options are among many of the application
specic solutions available.
AVALANCHE
PHOTODIODES
FOR RANGE
FINDING
APPLICATIONS
C30737 Epitaxial Silicon APD – C30724 Low Gain APD
Product Table
Part Number
Unit
Package
C30737EH-230-80
C30737PH-230-80
C30737LH-230-80
C30737LH-230-81
C30737EH-500-80
C30737PH-500-80
C30737LH-500-80
C30737LH-500-81
C30737EH-230-90
C30737PH-230-90
C30737PH-230-90
C30737PH-230-92
C30737EH-500-90
C30737PH-500-90
C30737LH-500-90
C30737LH-500-92
C30724EH
C30724PH
TO
T-1¾
LCC
LCC
TO
T-1¾
LCC
LCC
TO
T-1¾
LCC
LCC
TO
T-1¾
LCC
LCC
TO
T-1¾
Optical
Bandbass
Filter
nm
-
-
-
635
-
-
-
635
-
-
-
905
-
-
-
905
-
-
design
Active
Area
Diam.
µm
230
230
230
230
500
500
500
500
230
230
230
230
500
500
500
500
500
500
design
Peak
Sensitivity
Wavelength
nm
800
800
800
635
800
800
800
800
900
900
900
905
900
900
900
905
920
920
λpeak
typ
Breakdown
Voltage
V
120
120
120
120
120
120
120
120
180
180
180
180
180
180
180
180
-
-
VBR
min
V
200
200
200
200
200
200
200
200
260
260
260
260
260
260
260
260
350
350
VBR
max
Total Dark
Current (Bulk
+ Surface)
nA
2.5
2.5
2.5
2.5
5
5
5
5
2.5
2.5
2.5
2.5
5
5
5
5
20
20
10
10
10
10
20
20
20
20
10
10
10
10
20
20
20
20
40
40
ID
typ
nA
ID
max
Noise Current,
(f=10kHz,
Δf=1 Hz)
pA / √Hz
0.1
0.1
0.1
0.1
0.3
0.3
0.3
0.3
0.2
0.2
0.2
0.2
0.4
0.4
0.4
0.4
0.1
0.1
Capacitance
pF
1.0
1.0
1.0
1.0
2.0
2.0
2.0
2.0
0.6
0.6
0.6
0.6
1.0
1.0
1.0
1.0
1.0
1.0
CD
typ
Rise & Fall Time,
(RL=50Ω,
10 % -90 % -10 %
ns
0.22
0.22
0.22
0.22
0.30
0.30
0.30
0.30
0.50
0.50
0.50
0.50
0.60
0.60
0.60
0.60
5
5
typ
Temp.
Coeff.
Of VOP , for
V / ˚C
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.3
-
-
typ
Gain@
λpeak
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
15
15
M
typ
Responsivity
@ λpeak
50
50
50
35
50
50
50
35
60
60
60
60
60
60
60
60
8.5
8.5
M
typ
Electrical Characteristics at TAmbient = 22 °C; at operating voltage, Vop
Right: TO-C30737PH Series
T-1¾ (TO-like) rough-Hole
Package (4.9 mm Diameter)
Le: C30737LH Series
Leadless Ceramic Carrier
Package (3 x 3 mm2)

C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coefficient APD

• Laser range nding for 600 to 950 nm range
• Optical communication
• Analytical Instrumentation

• Optimized versions for 900 and 800 nm
peak sensitivity
• Standard versions with 500 and 230 µm
active diameter
• Various package types: hermetic TO,
plastic TO, SMD
• High gain at low bias voltage
• Low breakdown voltage
• Fast response, tR ~ 300 ps
• Low noise, in ~ 0.2 pA /√Hz
• RoHS compliant