CM200DU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMODTM U-Series Module 200 Amperes/1200 Volts A D F T - (4 TYP.) H G2 B E E2 C L J E1 CM G1 C2E1 S - NUTS (3 TYP) E2 Q K Q K H U C1 P G N K Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. R M C L G2 E2 Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.25 B 2.44 C Dimensions Inches 108.0 L 0.87 22.0 62.0 M 0.33 8.5 1.14 +0.04/-0.02 29.0 +1.0/-0.5 Millimeters N 0.10 2.5 D 3.660.01 93.00.25 P 0.85 21.5 E 1.880.01 48.00.25 Q 0.98 25.0 F 0.67 17.0 R 0.11 2.8 G 0.16 4.0 S H 0.24 6.0 T 0.26 Dia. J 0.59 15.0 U 0.002 K 0.55 14.0 M6 M6 Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200DU-24H is a 1200V (VCES), 200 Ampere Dual IGBTMODTM Power Module. 6.5 Dia. 0.05 Type Current Rating Amperes VCES Volts (x 50) CM 200 24 57 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-24H Dual IGBTMODTM U-Series Module 200 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Symbol CM200DU-24H Units Tj -40 to 150 C Tstg -40 to 125 C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES 20 Volts IC 200 Amperes ICM 400* Amperes IE 200 Amperes Storage Temperature Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current** (Tc = 25C) Peak Emitter Current** IEM 400* Amperes Maximum Collector Dissipation (Tc = 25C) Pc 1130 Watts Mounting Torque, M6 Main Terminal - 40 in-lb Mounting Torque, M6 Mounting - 40 in-lb - 400 Grams Viso 2500 Volts Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V - - 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V - - 0.5 A Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25C - 2.9 3.7 Volts IC = 200A, VGE = 15V, Tj = 125C - - Volts Total Gate Charge QG VCC = 600V, IC = 200A, VGE = 15V - 750 - nC Emitter-Collector Voltage* VEC IE = 200A, VGE = 0V - - 2.85 3.2 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, TTj = 25 C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time tr Switch Turn-off Delay Time Times Fall Time Test Conditions Min. Typ. Max. - - 30 nf - - 10.5 nf - - 6 nf VCC = 600V, IC = 200A, - - 200 ns VGE1 = VGE2 = 15V, - - 300 ns VCE = 10V, VGE = 0V Units td(off) RG = 1.6V, Resistive - - 300 ns tf Load Switching Operation - - 350 ns Diode Reverse Recovery Time trr IE = 200A, diE/dt = -400A/s - - 300 ns Diode Reverse Recovery Charge Qrr IE = 200A, diE/dt = -400A/s - 1.1 - C Min. Typ. Max. - - 0.11 C/W Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Test Conditions Per IGBT 1/2 Module Units Rth(j-c)Q Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module - - 0.18 C/W Rth(c-f) Per Module, Thermal Grease Applied - 0.020 - C/W Contact Thermal Resistance 58 Symbol Thermal Resistance, Junction to Case Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-24H Dual IGBTMODTM U-Series Module 200 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) 400 15 12 VGE = 20V 320 11 240 10 160 9 80 8 0 2 4 6 8 240 160 80 VGE = 15V Tj = 25C Tj = 125C 4 3 2 1 0 0 10 4 8 12 16 20 0 80 160 240 320 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 10 102 IC = 200A 4 2 IC = 80A 4 8 12 16 20 1.5 2.0 2.5 3.0 3.5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, trr, (ns) tf td(off) td(on) 102 tr VCC = 600V VGE = 15V RG = 1.6 Tj = 125C 102 COLLECTOR CURRENT, IC, (AMPERES) 103 trr 101 101 102 EMITTER CURRENT, IE, (AMPERES) Coes 100 Cres 100 101 102 GATE CHARGE, VGE di/dt = -400A/sec Tj = 25C Irr Cies COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 102 101 10-1 10-1 4.0 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 101 101 102 101 1.0 0 0 CAPACITANCE, Cies, Coes, Cres, (nF) 6 101 100 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 400A REVERSE RECOVERY CURRENT, Irr, (AMPERES) 8 400 VGE = 0V f = 1MHz Tj = 25C Tj = 25C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 320 0 0 SWITCHING TIME, (ns) 5 VCE = 10V Tj = 25C Tj = 125C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 400 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 200A VCC = 400V 16 VCC = 600V 12 8 4 0 0 250 500 750 1000 GATE CHARGE, QG, (nC) 59 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS ( IGBT) 10-3 101 100 10-2 10-1 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.11C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 60 101 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) CM200DU-24H Dual IGBTMODTM U-Series Module 200 Amperes/1200 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.18C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3