High power laser diode manufacturer
Most high-tech companies keep their know-how in secret and
sell only ready products.
We have the opposite strategy.
Our main product is know-how.
There is equipment and Equipment.
We offer you Equipment which is fully adapted for real A3B5
technologies.
We offer products manufactured using ATC-SD original
technology.
Our devices demonstrate characteristics at the top level of this
technology.
You can buy them, or make them yourself using our
technology.
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PLA - phase-locked array
Products
High power laser diodes 780 - 980 nm, 0.1 - 4.0 W
Description
Model coding
Specifications
Graphs
Package types
Laser linear arrays
Cooling heads
Focusing optics
NEW! Laser diode drivers
Atcus-15 medical device
Diode pumped solid-state lasers
Equipment
Molecular beam epitaxy ATC-EP3 machine
Chemical-molecular beam epitaxy ATC-EPN2 machine
High vacuum quadrupole mass spectrometer QMS-1
ATC-SD Home Page
Multi-purpose ultra high vacuum system UHVS-4
High-temperature vacuum furnace VF-1
Universal vacuum station SD-40 (T, M, E, G)
SD-40T - Basic unit with resistive evaporation unit
SD-40E - Basic unit with dry etching unit
SD-40M - Basic unit with magnetron sputtering unit
SD-40G - Basic unit with electron evaporation unit
NEW! Medicine
Events
Frequently Asked Questions
Please contact us: P.O.BOX 29, St.Petersburg, 194156 RUSSIA
Phone: +7 (812) 244-2532 Fax: +7 (812) 244-2544 E-mail: ter@atc.rfntr.neva.ru
You are visitor No. since February 29th, 1998
ATC-SD Home Page
KNOW - HOW
Most high-tech companies keep their know-how in secret and sell only ready products.
We have the opposite strategy.
Our main product is KNOW-HOW.
Manufacturing of 0.78-0.98 mkm high power laser diodes (LDs)
with output optical power of up to 4 W (CW) and laser linear arrays with output optical power of
up to 100 W (QCW), including growth of heterostructures and post-growth processing.
An original technological cycle provides manufacturing of quantum well (QW) stripe lasers
(partially phase-locked arrays) and includes the following basic technological operations:
laser heterostructure MBE growth● ohmic contact deposition and annealing● mask fabrication for dry etching● dry etching by collimated ion beam● additional insulation technique of etched regions● evaporation of adhesive and enhancing metal layers● sputtering of laser multilayer dielectric mirrors and antireflection protective coatings● laser diode package● testing●
Applications: solid state laser pumping, medicine (therapy, ophthalmology, oncology, surgery),
free space communication, beacon and illumination, alarm systems, automatics and robotics,
spectroscopy and other scientific applications.
ATC-SD offers a complete set of technical documentation, provides training and
know-how transfer to Customer’s staff both in the laboratories of the ATC-SD and of
the Customer.
ATC-SD also offers technological equipment providing implementation of the developed
technological processes with highest efficiency.
Options (Know-How)
Know-how for fabrication of high power laser linear arrays with output optical power up to
100W in Quasi-CW mode.
●
Know-how for fabrication of laser diode pumped Nd: YAG solid-state lasers is offered on
the base of cooperation with Vavilov State Optical Institute (St. Petersburg).
●
Know-how for fabrication of quantum well InGaAlAs strained laser wafers by the Molecular●
ATC-SD's know-hows in semiconductor technology
Beam Epitaxy.
Options (Equipment)
1. Growth equipment. ATC-EP3 MBE System - a solid
source single-wafer-reactor molecular beam epitaxial system
specially designed for high quality III-V compound growth
and applied for growing laser and transistor (FET, HEMT)
heterostructures.
2. Postgrowth Equipment based on the universal vacuum
stations SD-40 developed by the ATC-SD. It features small
footprint, easily adaptability to any technological process.
Modifications of SD-40 are used for resistive vacuum
spattering of metals, for dry etching, for magnetron
deposition of dielectric and insulating layers. This set of the
postgrowth equipment may also include: laser
interferometer, device for wafer thinning, laser diode testing
machines.
New materials for opto- and microelectronics (R&D on GaN, InGaAlN)
The new technical revolution in semiconductor optoelectronics is expected due to development of
production technology of band-to-band light emitting and laser diodes for blue-green spectral
range. In turn, this will result in significant broadening of semiconductor devices application
areas:
1. Blue-green LEDs - full color semiconductor displays and indicators:
substitution of vacuum kinescopes● new generation of TV and video● super-brightness full color advertising and signal lamps●
2. Ultra-violet, blue and green laser diodes - significant increase of information density in optical
storage devices:
substitution of magnet media of information storage by optical ones● new generation of computers●
3. High-frequency, high-temperature microelectronic devices - in combination with chemical
resistivity.
Why has ATC-SD opted for MBE for Group III nitride growth, when Japanese and US
companies have gone for MOVPE?
The main notion of ATC-SD is that effective MBE epitaxial growth of group-III nitride layers of
ATC-SD's know-hows in semiconductor technology
device quality needs development of the special CBE growth equipment fully adopted to specific
features of these materials. Such a growth machine ATC EPN-1 where the ammonia is applied as
one of the sources has been designed and fabricated in our company in 1997. The main
peculiarity of this machine as compared to traditional MBE equipment is using of significantly
higher (~100 times) gas flow (see related article The growth rate evolution versus substrate
temperature and V/III ratio during GaN MBE using ammonia). This is requirement necessary for
growth of high-quality epitaxial layers. At the very first months of work the high-quality layers of
GaN were obtained with this machine.
Simultaneously the main post-growth operations were worked off for AlN and GaN layers. In
particular, using of ion dry etching of AlN and GaN allows us to get reproducibly the etching rates
of 12 nm/min and 15 nm/min respectively.
Why is ATC-SD's approach to MBE (use of ammonia source) better and is anyone else doing
this?
Now the possible customers have the unique opportunity to take part in ATC-SD R&D program.
In 1-1.5 years we expect to have got complete growth and post-growth technology of group-III
nitride based devices. Since that time we will offer for selling the manufacturing technology along
with the set of special equipment.
We are open for any kind of co-operation
Home | About | Know-how | Products | Equipment | Medicine | Events | FAQ | Contact
ATC-SD's know-hows in semiconductor technology
High-power semiconductor laser diodes
wavelengths 780...820 and 960...980 nm
Description
Model coding
Specifications
Graphs
Package types
We offer
laser diodes with CW output power from 100 mW to 4 W, in
various packages
●
QCW laser linear arrays with output power of 25, 40 and 100 W●
laser cooling heads●
feedback photodiode, thermistor, microcooler, microlens● additional optics●
CW laser drivers●
experimental lasers manufactured in accordance with the
customer's assignment
●
medical device Atcus-15 based on our laser diodes●
diode pumped solid-state lasers, which use our laser diodes as
source of pump radiation
●
Fields of application
Medicine (therapy, surgery, oncology, oftalmology, cosmetology),
systems of local communications, alarm systems, automatics and
robotics, pumping of solid state lasers (spectroscopy, laser gyros),
sensing spectroscopy, research and development.
Our laser diodes have a special chip design - Phase-Locked Array
How can ATC-SD confirm high quality of these laser diodes?
Main technical data
Wavelength range● 780...820 or 960...980 nm
Spectral width (FWHM)● 2 nm
Beam divergance● 40 x 10 degrees
Temperature coefficients●
threshold current, T0
120...140 oC
To can be modeled as
ITH2=ITH1 exp [ (T2-T1)/To]
operating current 0.8 % / oC
wavelength generation 0.3 nm/ oC
Thermal resistance● 5...10 oC /W
Series resistance, typical● Rs=(Voper-1,5V)/Iop
ATC-SD high power laser diodes
Monitor photodiode● sensitivity 0.3 ... 10 mkA/mW
operates without reverse bias
Thermoelectric
Cooler
●
Max. Drive
Current
TB-31-0,6/0,8 for ATC-C50
... ATC-C500 2.0 A
TB-17-1,0/0,7 for
ATC-C1000 ... ATC-C1200 7.0 A
Max. Drive
Voltage
TB-31-0,6/0,8 for ATC-C50
... ATC-C500 3.5 V
TB-17-1,0/0,7 for
ATC-C1000 ... ATC-C1200 2.0 V
Thermistor R @ 25 oC● 10 kOhm ± 5%
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DPSSLs
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ATC-SD high power laser diodes
ATC laser diodes description
The ATÑ series laser diodes are manufactured on the base of the MBE and MOCVD grown AlGaAs
quantum well heterostructures. This technologies provide a very accurate control of the chemical
composition and grown layer thickness’ and ensure high reproducibility of device parameters.
Application of quantum well structures (active layer thickness 100-200 A) provides low threshold
current densities and high optical output power.
The ATÑ laser diodes are fabricated as partially phase-locked laser arrays with the period of
about 10 m m and total width from 40 to 500 m m. Innovative postgrowth technologies enable
to develop a highly efficient technological cycle for the fabrication of the ridge type laser arrays
with additional interstripe isolation.
Lasers are soldered on the heat sink with the epitaxial layers down, that ensures efficient heat
removal and provides high optical output power.
ATC-SD carries out testing of each device (500 hours CW operation) and one-off certification
after the test. This procedure ensures the selection of highly reliable samples.
So what is a lifetime of ATC-SD's laser diodes?
Lasers are manufactured in the following three types of packages: open heat sink, the ATC
package and TO-3 package.
Lasers of the "open heat sink" type are the cheapest and allow different manipulations with the
laser crystal. They are preferable if the user carries out scientific investigations and encapsulates
the entire radiator unit by himself.
ATC package is a hermetically sealed case with flat output window. This unit allows operation
without complementary heat sink in a pulsed mode and in some cases, in a CW mode. Small
heat resistance of ATC package provides low temperature difference between external package
surface and laser (less then 5 degree).
TO-3 package is adjusted to the international standards. This package includes
Peltier-microcooler and thermistor and allows to maintain constant operation temperature.
All packages may contain cylindrical microlens as an option. In this case customer can work
without additional optical systems or use unexpensive longfocuse lens.
What is a microlens? What does it do?
All packages may contain a monitor photodiode as an option, which ensures stabilization of the
radiation power. Photodiode characteristics are linear in wide power range. The photodiode
operates without opposite bias, the response time is about 50 ns. The sensitivity of photodiode is
0.3-10 m A/mW.
Are the microlens and feedback photodiode removable?
ATC LDs description
Laser linear arrays are delivered on an open heat sink and intended for side pumping of YAG:Nd
rods.
It is necessary to use TE cooler for ensuring needed operating conditions for laser array
operation. Laser array emitting dimension is more then 70% of the heat sink width, it is allowed
to use several laser arrays semultaneously for one YAG:Nd rod pumping. It is necessary to use
special driver for laser array supply which can be made by special order.
ATC LDs description
Phase-Locked Array
Our laser chips have a special structure, which allows to get uniform distribution of the output
optical power, high time and space stability, lower noise, higher life-time and other significant
advantages over common type ones. These properties also lead to higher quality of radiation of
the solid-state lasers pumped with our diodes.
Researchers of ATC-SD, Dr. D.M.Demidov, Dr. N.I.Katsavets, Dr. A.L.Ter-Martirosyan and Dr.
V.P.Chaly described PPLA in an article "High-power stabilized laser diodes for solid-state lasers
pumping", published in the "Quantum electronics" all-Russian magazine, issue 28 (9) 768-770
(1998).
Patented technology
The latest ATC-SD
Patent registered by
Rospatent (Russian
Agency for Patents and
Trademarks) is devoted
to PLA construction of
the laser diode chip.
The high temporal and
space stability as well as
the long life-time of laser
diodes manufactured
using this design is very
important for their
application in high
stability diode pumped
solid-state lasers.
Report on SPIE Conference Laser Optics '98
SPIE 9th conference on Laser Optics (LO'98) was held in St.Petersburg,
Russia, on June 22-26th, 1998.
Dr. Hermann Grempel from BremLas Lasertechnik Bremen GmbH, a German
company which uses our LDs for pumping of DPSSLs, presented a joint
report, demonstrating advantages of PPLA chip design for pumping of
solid-state lasers.
This report is published in SPIE proceedings, vol.3682-05.
Unique chip design of the laser diodes manufactured by ATC-SD
Powerful highly stable laser diodes for pumping of solid-state lasers
D M Demidov, N I Katsavets, A L Ter-Martirosyan, V P Chaly
Quantum Electronics 28(9) 768-770 (1998). PACS numbers: 42.55.Px, 42.55.Xi
©1998 Kvantovaya Elektronika and Turpion Ltd.
ABSTRACT. Powerful laser diodes, representing partly phase-locked laser arrays based on quantum-well
heterostructures, were developed. The high temporal and spatial stability, and the long service life of such
laser diodes make them suitable for optical pumping of solid-state lasers.
Powerful semiconductor laser diodes (LDs) are used very widely in various branches of science and technology. In addition
to their direct utilisation in laser device manufacture (laser communications, measuring instruments, medicine,
spectroscopy, etc.), they have recently become very popular as pump sources for solid-state lasers based on garnet crystals
doped with rare-earth elements. The development of solid-state lasers pumped optically with semiconductor lasers ('diode
pumping') has led to fabrication of a new generation of lasers operating in various spectral ranges (0.47-2.9 um).
The main advantages of diode-pumped solid-state lasers is their high efficiency, the absence of water cooling, and the
relatively small size of the laser source and control unit [1]. LDs used to pump such solid-state lasers should have a high
optical output power, a narrow spectral emission band, a long operating life, and a high spatiotemporal stability of the
distribution of the radiation intensity [2].
We shall report the latest development of powerful LDs based on partly phase-locked arrays. Such LDs were made from
quantum-well laser heterostructures with separate electron and optical confinement, fabricated by the molecular beam [3]
and MOCVD epitaxy methods, and designed for optical pumping of solid-state lasers.
The main shortcoming of the traditional LDs with a wide stripe contact is a relatively low spatiotemporal stability associated
with an inhomogeneity of the distribution of the optical power in the emitting stripe [4]. This instability is the result of the
presence in a stripe of channels with the most favourable conditions for the generation of radiation (with the lowest optical
losses or the highest optical gain), known as 'filaments' [5]. The dimensions and the spatial distribution of these filaments
are extremely sensitive to the pump current and temperature. Fluctuations of these parameters alter drastically the lasing
conditions and result in filament switching, which redistributes the optical power in the LD cavity. This increases the If
optical noise and oscillations, as well as fluctuations of the radiation profile in the near-field and far-field zones.
The temporal and spatial characteristics of LDs can be improved if, instead of the traditional wide stripe contact, the LD has
the design of a shallow mesa with additional isolation [6], shown in Fig. 1. Here, a contact on the side of the p-type GaAs
layer represents a system of coupled stripe emitters (a partly phase-locked array) with the optical coupling coefficient
controlled by varying the depth of etching of the mesa.
Figure 1. Design of a partly phase-locked array with a shallow mesa and additional isolation.
Profiled heterostructures are made by ion etching employing a neutralised collimated beam of argon ions of energy up to
1000 eV delivered through a photoresist mask. A reflecting multilayer coating with a reflection coefficient in excess of 95%
is deposited on the rear facet of an LD and an antireflection (and also protective) coating with a reflection coefficient of
about 10% is deposited on the front facet.
Quantum Electronics 28
LD designs based on a partly phase-locked array can be used to form current-flow channels which are practically
independent of fluctuations of the operating temperature and of the pump current [7]. This is illustrated in Fig. 2 which
shows the patterns obtained in the near and far fields (in a plane parallel to the p-n junction) for an LD with a partly
phase-locked array consisting of five stripe emitters (array period 8 urn). We can see that the near and far field patterns
have a high temperature stability and depend weakly on the pump current driving the LD.
Figure 2. Distribution of the output radiation in the near (a) and far (b) fields of a laser diode with a partly phase-locked
array.
In view of the fixed positions of the current-flow channels, the distribution of the optical power on a mirror in an LD with a
partly phase-locked array is more uniform than in an LD with a wide stripe contact and this increases considerably the
operating life.
Fig. 3 gives the dependence of the output optical power of an LD with a partly phase-locked array on the duration of its
operation at an optical power density on the mirror amounting to 10 mW per 1 pm of the emitting area width. An analysis
of this dependence shows that the rate of fall of the optical output power is (0.6-1.0) x 10 % h and the expected operating
life of this LD at a working temperature of 20 °C is at least 10 000 h.
Figure 3. Dependence of the optical output power P of a laser diode with a partly phase-locked array on the duration of
operation.
Investigations of the noise characteristics of these diodes showed that the optical noise measured in the frequency range
from 30 Hz to 30 MHz does not exceed 0.5%, whereas in the case of diodes with a wide stripe contact the filament
switching processes increase the noise to 5% - 10%.
Model Power Operating
regime Efficiency Dimensions Pump current Operating
voltage
mW % mkm mA V
ATC-2220A 200 CW 25 35 x 1 400 1.8
ATC-2430 500 CW 25 100 x 1 1100 1.8
ATC-2440A 1200 CW 25 150 x 1 1890 2.0
ATC-2550 3000 CW 25 500 x 1 4500 2.0
ATC-3690 25000 QCW 30 5000 x 1 39000 2.2
Quantum Electronics 28
Table 1. Some characteristics of the LD's emission spectra. Type B is superior to type A with respect to its smaller FWHM.
Figure 4. Dependencies of the output power on the drive current (watt -ampere characteristics) of a laser diode with a
partly phase-locked array (model ATS-2550) operating continuously.
The design based on partly phase-locked arrays is suitable for LDs with stripe emitters from just a few to several hundreds. Such a design was used to develop (and
now to manufacture serially) several models of LDs (Table 1) with the emitting-area width 1 \xm, of d = 35-500 um length, and with an output optical power P =
200 mW- 3 W (a typical watt - ampere characteristic of the ATC-2550 model of this LD is given in Fig. 4). Linear arrays operating quasi-continuously (t ~ 200 m s)
with an output power in excess of 25 W were also developed.
These devices emit in the wavelength ranges 790 - 820 and 960-980 nm (moreover, the emission wavelength can be varied within the limits ±5 nm by altering the
operating temperature of the LD, which changes the wavelength at a rate of 0.3 nm K-1) and have an emission spectrum with a half-width less than 2 nm [8] (Fig.
5).
Figure 5. Spectral dependence of the intensity of the output radiation from a laser diode with a partly phase-locked array
(model ATC-2550).
The 'Semiconductor Devices' Company developed, on the basis of LDs with partly phase-locked arrays and an output power of 1 and 3 W, a laser system consisting
of LDs with a microlens and a feedback photodiode, an air-cooled radiator, collimating or focusing optics, and a programmed driver based on an I80C51GB
microprocessor. Such a system permits monitoring and c6ntrol of the optical power, pump current, and temperature, and it also protects an LD from electric
breakdown.
The powerful LDs based on partly phase-locked arrays, used as optical pump sources for solid-state lasers, have a number of advantages compared with traditional
wide-stripe LDs: the noise level is low, the temperature and temporal stability of the far and near radiation fields are high, and the operating life is long.
In conclusion, we would like to thank the Russian Foundation for Technological Development and the Regional Foundation for Scientific and Technical Development of
St Petersburg for constant interest and support.
REFERENCES
1. Fan T Y, Byer RL IEEE J. Quantum Electron. 24 895 (1988)
2. Grempel H, Katsavets N I, Demidov D M, Ter-Martirosyan A L, Kopylov Ch V, Pfeifer E Materials of the Ninth Conference on Laser Optics (LO'98), St Petersburg,
1998
Quantum Electronics 28
3. Karpov S Yu, de la Cruz G, Myachin V E, Ostrovskiy A Yu, Pogorel'skiy Yu V, Rusanovich I Yu, Sokolov I A, Strugov N A, Ter-Martirosyan A L, Fokin G A, Chaly V P,
Shkurko A P, Etinberg M I Pis'ma Zh. Tekh. Fiz. 17 (7) 31 (1991) [Sov. Tech. Phys. Lett. 17 248 (1991)]
4. Casey H C Jr, Panish M B Heterostructure Lasers Part B Materials and Operating Characteristics (New York: Academic Press, 1978)
5. Chow W W, Depatie D IEEE J. Quantum Electron. 24 1297 (1988)
6. Demidov D M, Ter-Martirosyan A L, Chaly V P, Shkurko A P "Semiconductor injection laser", Application for a Russian Patent No. 96108212/25 (013944) made on
24 April 1996; approved 20 November 1997
7. Chaly V P, Karpov S Yu, Ter-Martirosyan A L, Titov D V, Wang Zhang Guo Semicond. Sci. Technol. 11 372 (1996)
8. Demidov D M, Katsavets N I, Leus R V, Ter-Martirosyan A L, Chaly V P Pis'ma Zh. Tekh. Fiz. 23 (8) 90 (1997) [Tech. Phys. Lett. 23 331 (1997)]
Quantum Electronics 28
http://www.atcsd.neva.ru/Images/patent-61k.JPG
Requirements on pump-diodes for DPSSLs
Hermann Grempelb, Nikolay I. Katsavetsa, Alexander L. Ter-Martirosyana, Christoph v. Kopylowb, Egon
Pfeiferb
aATC - Semiconductor Devices, P.O. Box 29, St. Petersburg, 194156 Russia
bBremLas Lasertechnik Bremen GmbH, Fahrenheitstrasse 1, D-28359 Bremen, Germany
ABSTRACT
We report on the influence of the different specifications of a single emitter laser diode (type A) and a laser diode (LD) of
the partially phase locked type (type B), on some characteristics of our diode pumped solid state lasers (DPSSL). We find
that the use of the type B LD is preferable to that of type A with respect to smaller M2 of the DPSSL-beam, superior noise
behavior, and smaller full width at half maximum (FWHM) of the LD emission.
Keywords: DPSSL, LD, beam quality, M2, intra cavity frequency doubling
INTRODUCTION
In the recent years, diode pumped solid state lasers (DPSSL) have gained an important role in the laser market. This is
because of the unique advantages that DPSSLs offer compared to e.g. gas lasers. In the fields where DPSSLs are applied,
the demands on the performance of the lasers are quite high. Life time of the DPSSL should be well above 10,000 hours,
the beam should be Gaussian-shaped with an M2 smaller than 1.2, and noise has to be lower than 1 %.
Besides the construction of the cavity and the elements building the cavity, the characteristics of the pumping diode has a
significant influence on the performance of the DPSSL.
DESCRIPTION OF THE LASER SYSTEM
The DPSSL under consideration is an end-pumped intra cavity frequency doubled micro chip laser. The radiation of the LD
is focused into the laser crystal by pump optics. The cavity consists of a Nd:LSB laser crystal and a KTP-crystal for
frequency doubling. The mirrors of the cavity are built by dielectric layers on the outer side of the LSB- and KTP-crystal,
which are high reflective for the fundamental wavelength at 1064 nm. To couple out the second harmonic, the dielectric
layer at the outer side of the KTP-crystal is high-transmittive at 532 nm.
Some characteristics of the LDs are shown in Table 1.
Type A Type B
emitting surface 200 m m x 1 m m 150 m m x 1 m m
optical output power 1 W 1 W
expected life time > 10,000 h > 10,000 h
type single emitter partially phase-locked laser array
Table 1. Characteristics of LDs of type A and type B
DESIRED AND ACTUAL CHARACTERISTICS OF THE LDs AND THEIR INFLUENCE ON
THE PERFORMANCE OF THE DPSSL
Spectral characteristics of the LDs
Requirements on pump-diodes for DPSSLs
To pump the laser crystal effectively, the center wavelength of the emission spectrum of the LDs should coincide with the
absorption maximum of Nd:LSB at 808 nm. The FWHM of emission spectrum should be smaller than the FWHM of the
Nd:LSB-crystal, which is 3 nm. In Table 2, some of the emission characteristics of the LDs are shown. The emission
spectra of about 40 pieces of each LD-type have been taken into account.
Type A Type B
average deviation of the center wavelength of emission from
808 nm, LD temperature: 20 C +/- 0.14 nm +/- 0.53 nm
average FWHM (2.50 +/- 0.81) nm (1.49 +/- 0.62) nm
relative number of LDs with FWHM > 3nm 20.93 % 0 %
Table 2. Some characteristics of the LD's emission spectra. Type B is superior to type A with respect to its smaller FWHM.
From Table 2 it can be seen, that the average deviation of the center wavelength of the LD emission from the desired
center wavelength at 808 nm is bigger for type B than for type A. In any case, it has been possible to tune the center
wavelength of the diodes to 808 nm by adjusting the their temperature between 15 C and 35 C. With respect to their
smaller FWHM, the type B LDs are superior to the type A LDs.
The influence of the LD-type on the DPSSL beam quality
To achieve a Gaussian beam-shape, the pump-volume should lie within the volume of the TEM00- cavity mode. The better
this requirement is fulfilled, the closer will the value of M2 be to 1. In Table 3, the average M2 of the beam of the DPSSL
is evaluated for DPSSLs pumped by type A and type B laser diodes.
Type A Type B
M2 of the DPSSL-beam 1.36 +/- 0.29 1.24 +/- 0.13
Table 3. Average M2-value of the DPSSL-beam for DPSSLs pumped by type A of by type B laser diodes. Type B is
superior to type A because smaller M2-values can be achieved.
For pumping with type B LDs, the average value of M2 is lower. We ascribe this to the smaller emitting area of the type B
LDs. Furthermore, if we tried to achieve an M2-value smaller 1.2 for an DPSSL pumped by a LD of type A, this was only
possible if the pump-beam impigned near the edge of the laser crystal. We presume that part of the pump beam is cut by
the holder in this case and the pumping volume is reduced in that way.
Usually, the quality if the crystal and the layer is reduced near the edge of the crystal. Therefore, in the manufacturing
process, it takes a lot of time, to find an area with acceptable quality of layers and crystal. Moreover, these areas are
usually rather small. In consequence, just very small disalignment, e.g. induced by thermal expansion, may be enough to
enhance the M2-value or to reduce the output power of the DPSSL. Therefore, we expect the DPSSLs pumped by type B
LDs to show superior stability.
Comparison of the noise behavior of type A and type B LDs
For many applications, the output noise of the DPSSL has to be lower than 1 %. In the kind of DPSSL laser considered
here, one of the main contributions to noise arises from mode competition. It is therefore desirable, to minimize all
additional contributions to noise. Because of this reason, we examined the noise behavior of type A and type B LDs. While
scanning temperature and pumping current of the LDs, the noise has been measured. In the case of type A LDs, broad
areas with noise up to 6 % were detected. In the case of type B LDs, the noise has been smaller than 0.5 % nearly in the
whole scanning region.
SUMMARY
We compared some characteristics of a single emitter LD to that of a partially-phase locked laser array. The
partially-phase locked laser array LD showed a smaller FWHM of its emission spectrum and lower amount of noise in its
optical output power. If we pumped our DPSSLs by the partially-phase locked laser array LD, the average value of M2 of
the DPSSL-beam was closer to 1, compared to the case that we used the single emitter LD-type as a pumping source.
In conclusion, we prefer the partially-phase locked laser array for the production of our DPSSLs.
ACKNOWLEDGMENTS
Requirements on pump-diodes for DPSSLs
Frequently Asked Questions
PRODUCTS
What laser diodes do you offer?
How can you confirm quality of your laser diodes?
What is a lifetime of your laser diodes?
How do you test LDs for the lifetime?
Is it possible to vary the output power of the working laser diode?
What is the type of LDD-10 output connector?
What thermistor should be used while working with LDD-10?
What is a microlens? What does it do?
Are your microlens and feedback photodiode removable?
Can you make a customized product matching my specific need?
What are your terms of delivery?
SEMICONDUCTOR TECHNOLOGY
Why has ATC-SD opted for MBE for Group III nitride growth, when Japanese and US companies
have gone for MOVPE?
Why is ATC-SD's approach to MBE (use of ammonia source) better and is anyone else doing
this?
GENERAL
What is ATC-SD's main asset that set it apart from other Russian and international competitors?
What is ATC-SD's strategy for competing in an international market?
PRODUCTS
What laser diodes do you offer?
We manufacture multi-mode laser diodes with CW output optical power of 100 mW -
ATC-SD Frequently Asked Questions
3 W, having emission wavelength of 780 - 820 nm or 960.- 980 nm. For details see
ATC-SD laser diodes.
How can you confirm high quality of your laser diodes?
ATC-SD's laser diodes are certified by Rosstandard - the highest Russian certifiaction
authority.
Our laser diodes were captiously tested by many domestic and foreign companies,
confirming high quality of our products. One of our frequent customers recently
presented a report on the LO'98 SPIE conference.
What is a lifetime of your laser diodes?
Specifying the lifetime of our laser diodes as 10,000 hours, we define it as a time
period when the output power of a diode decreases by 20% under conditions of
constant pumping current (noted as an operating current in the certificate of each
LD) and working temperature of +20 C.
To determine the expected lifetime of our laser diodes, we carry out three types of
testing:
a. Accelerated test method under high temperature conditions (+50 C) using the
acceleration coefficients.
b. Testing under normal (20 C) conditions for a limited period of time with linear
extrapolation.
c. Real time (10,000 hours) testing of limited amount of LDs. This method
experimentally affirms the value of the acceleration coefficient used in method (a)
and competence of usage linear extrapolation in method (b).
How do you test LDs for the lifetime?
Each and every laser diode manufactured by ATC-SD is being tested under normal
(20 C) operating conditions for 500 hours. Then the diodes that show expected
decrease in output power of more than 20% at 10,000 hours point (see our definition
of the lifetime above) are rejected, while the others (expected decrease in output
power less than 20% for 10,000 hours) are being placed to stock.
Is it possible to vary the output power of the working laser diode?
You certainly can vary the laser output power by changing the driving current. This
can be done by manual rotating of the corresponding knob or typing the current
value on the keyboard of the LDD-9A driver, simultaneously observing the current
or/and output power on two numeric displays of the driver.
The dependence of the output power from the current is linear. See typical graphs.
What is the type of LDD-10 output connector?
LDD-10 has a 1 meter cable as an output, which terminates with RS-19 connector,
which fits the ATC cooling heads. We will provide you with contacts map of the
connector, if necessary. Besides, we may complete your order of the driver with the
complementary part of the connector for free.
What thermistor should be used while working with LDD-10?
Our drivers are designed to use thermistor of 10 kOhm+-5% at 25 C as a standard
temperature sensor. However, it may be easily re-configured by the user
ATC-SD Frequently Asked Questions
(instructions in the Manual) for different Peltier thermocoolers and thermistors. If you
can point parameters of TEC and thermistor used by you, we may configure the
driver by ourselves before shipping to you.
What is a microlens? What does it do?
The laser diode without microlens has a beam divergence of about 40 x 10 degrees
at FWHM level. The microlens is an anti-reflection-coated cylinder, which is being
mounted after the front mirror of the laser diode. It gives reduction of the beam
divergence to 2 x 10 degrees.
Are your microlens and feedback photodiode removable?
Microlens and feedback photodiode are mounted on the open heat-sink together with
soldered laser chip, and this joint construction is pressurized into TO-3 or ATC case.
Thus they are NOT removable.
Additional collimating or focusing optics is placed onto the TO-3 or ATC case from
outside and may be removed easily.
Can you make a customized product matching my specific need?
We always try to make advances towards our clients needs. Usually we can change
technical parameters of our products to some extent, develop and manufacture some
additional focusing or collimating optics according to your requirements, and so on.
If you failed to find standard production fitting your task, please describe in details
your application, wavelength and wavelength tolerance required, power, beam
characteristics, etc. The more information you give, the more likely we can help you.
What are your terms of delivery?
After your placing an order, we send you an invoice by e-mail or fax, and you make
cash in advance payment onto our bank account.
The prices indicated in our price-lists are ex-works (EXW). That is the price if one
takes the goods at our premises in St.Petersburg, Russia. To be let out across the
Russian border legally, the customs procedures should be executed. This cost about
USD 100. At this step delivery conditions are called FCA.
If you want the goods to be delivered to Your City, the delivery
conditions are called CIF Your City.We use UPS as reliable
company which operates properly on Russian territory and
with Russian customs. Others may work not so well (tested
experimentally!).
You may read more about EXW, FCA, CIF and other Incoterms here.
So, UPS delivers the devices CIF Your City. Their service cost about USD 50 -150 (for
usual weights and destinations of our shipments). After that you should contact your
local custom authorities to get to know what procedures and payments is necessary
(if any) to actually get the goods.
We send standard devices within one month after receiving the money. Actual time
usually is less, depending on availability of devices at our stock.
SEMICONDUCTOR TECHNOLOGY
Why has ATC-SD opted for MBE for Group III nitride growth, when Japanese and US
ATC-SD Frequently Asked Questions
companies have gone for MOVPE?
We realize that MOCVD technology currently have better results in GaN technology.
To our opinion, it has happened due to wrong direction originally chosen by MBE
researchers, and that both ways will finally lead to very close results.
In our research we prefer MBE since this technology traditionally possesses better
research methodology at the very stage of the growth process.
MBE technological process has higher variability which fastens the development of
technologies and allows to bypass patent restrictions of MOCVD technology area. We
may have more variations of our technologies and thus serve the market needs
better.
Besides that, MBE process is ecologically much more friendly than MOCVD.
Why is ATC-SD's approach to MBE (use of ammonia source) better and is anyone else
doing this?
We prefer ammonia to plasma as nitrogen source since it allows to perform faster
growth. Besides that, using plasma one usually faces certain difficulties with InGaN
layer growth. Finally, atomic nitrogen from plasma source is contaminated with ion
component.
And as far as we know, leading MBE researches have switched to ammonia during
last 1.5 years, and most advanced MBE results are achieved using just ammonia
sources.
GENERAL
What is ATC-SD's main asset that sets it apart from other Russian and international
competitors?
The most important is our own unique design of the laser chip - "partially
phase-locked array". This design ensures superiority of some important parameters
of our diodes' performance.
On the Russian market our LDs are the most powerful among the domestic
manufacturers and the cheapest among all high power LDs available.
Our equipment looks very attractive on criteria of good quality at most affordable
price.
We always use customized approach to satisfy our clients' needs.
What is ATC-SD's strategy for competing in an international market?
We perform full cycle at our facilities - from fundamental research through
manufacturing to sales, having tight collaboration on all stages. This helps us to stay
on the front edge of the laser market.
We make complex final product - equipment together with the modern technologies,
laser systems and devices together with operating methods - to solve our customers'
problems.
We try to do our best to satisfy needs of new product developers with our wares, so
that they choose us as suppliers when turning to serial production.
ATC-SD Frequently Asked Questions
Laser diode driver and temperature controller LDD-10
The LDD-10 Laser Diode Driver is a general
purpose power supply driver and temperature
controller for high power laser diodes up to 5 W
CW. Designed specifically for safe and fault-free
operation of laser diodes, the LDD-10 includes
diode protective circuits, a feedback photodiode
circuit, overcurrent limit, and full TE cooler
control. The driver provides a digital display of
four key operating functions.
What thermistor should be used while working
with LDD-10?
The I80C516B microprocessor serves as a central
processing unit of the driver. The built-in pulse
generator supports the driver operation both in
continuous and pulse modes.
What is the type of LDD-10 output connector?
LDD-10 is intended for driving the laser diodes
packed into the TO-3 case and mounted on the
cooling head ATC-02H, as well as packed into the
ATC case and mounted on the cooling head
ATC-03H.
Basic features
Power supply for laser diode in continuous wave and pulse modes●
Stabilization and visual check of the laser diode operating current with the possibility to
control and limit it
●
Protection against electrical damage and overheating●
Stabilization and control of laser diode temperature●
Control of the optical power using monitor photodiode●
Storage of total driver working time●
New features of this model
Rough and precise modes of parameter adjustment●
External modulation with TTL-level signal●
LDD-10 laser diode driver
Connection with remote computer via RS-232 interface●
Main technical data
Version LDD-10A LDD-10
LD current 0.1 - 6.0 A 0.1 - 8.0 A
LD current setting accuracy 0.001 A
LD current noise and pulsation level Not more than 1 %
Maximum electrical voltage on LD 2.4 V
Long-term instability of LD current Not more than 1 %
LD current pulse width 0.001 - 9.998 seconds
LD current pulse repetition period 0.001 - 9.998 seconds
External TTL modulation frequency up to 50 kHz
Heat-sink temperature setting range +5îÑ...+ 50îÑ
Heat-sink temperature setting
accuracy Not less than 0.1îÑ
Accuracy of temperature retention Not less than 0.5îÑ
Maximum electrical voltage on Peltier
TEC Not less than 4.6V
Maximum current through Peltier TEC Not less than 8.0A
RS-232 support with basic monitor
commands Yes Yes
Special software for external PC
(Windows) No Yes
LD voltage measurement feature No Yes
Case Standard Improved (photo above)
Vario Modul iS by Rittal
Operating temperature range +10 - +40 îÑ
Network power supply 220VAC/50Hz (standard) or 110VAC/60Hz (upon
request)
Network power consumption Not more than 100VA
Size 236 x 105 x 300 mm
Weight 3.3 kg
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LDD-10 laser diode driver
LDD-10 laser diode driver
EQUIPMENT
There is equipment and Equipment.
We offer you Equipment which is fully adapted for real A3 B5 technologies.
Molecular beam epitaxy ATC-EP3 machine
Chemical-molecular beam epitaxy system ATC-EPN2
High vacuum quadrupole mass spectrometer QMS-1
Multi-purpose ultra high vacuum system UHVS-4
High-temperature vacuum furnace VF-1
Universal vacuum station SD-40 (T, M, E, G)
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ATC-SD vacuum equipment
Molecular beam epitaxy ATC-EP3 machine
Details
ATC-EP3 is a MBE system specially designed for III-V epilayer growth.
It was initially made in main scheme close to ISA RIBER's MBE
systems, and then modified by ATC-SD to increase it's components
characteristics and reliability to obtain high quality material growth.
ATC-EP3 MBE system configuration allows to accept all types of solid
sources and substrates mounted by indium-soldered or indium free
holder. ATC-SD uses ATC-EP3 in a wide range of research works and
in producing of powerful AlGaAs/GaAs SQW Laser Diodes (808 nm, 4
W CW).
Application area - epitaxial growth of wafers for:
Near infrared light emitting devices - Laser Diodes and LED’s based
on III-V solid solutions (AlGaAs, AlGaInAs, etc.)
●
Sb-containing far-infrared light emitting devices (InSb, InGaAsSb)● High speed HEMT’s, bipolar transistors, photodetectors and other
microwave semiconductor devices
●
MQW structures● Wide range of scientific works: surface investigation, quantum -
size effect research, growing of quantum wires, dots, etc.
●
Devices based on A2 B6 materials (CdTe, ZnSe, etc) also available●
System characteristics
Ion and Ti-sublimation pumping; residual pressure 1x10-10 Torr● Liquid nitrogen cooled cryopanels● Eight effusion cells with PBN crucibles and water cooled shroud● PID control by W-Re thermocouple● 40 mm molyblock for substrates● Sample rotation● Substrate heating up to 800 0C● Accurate thickness control by pneumatic activated shutters● In situ surface monitoring by RHEED● Residual atmosphere control by Quadrupole MS● Easy Load-Lock/Substrate Transfer System● RHEED data acquisition system● Shutter operation computer control●
ATC-EP3 molecular beam epitaxy machine
Possibility of connection of two ATC-EP3 in one technological line by
transfer chamber
●
Customer support
System installation and basic technological education according to
several variants
●
Warranty and postwarranty service● Technical and technological consultation● Expansion of the system by full computer control system, including
software for growth process programming, controlling and
displaying
●
Adaptation of customer’s epitaxial technology to ATC-EP3 MBE
system
●
Design and fabrication of ultra-high vacuum units according to
customer needs
●
Technical data
Maximum operating temperature of the effusive cell of molecular
sources, no less than
● 1250 °C
Instability of the temperature of the molecular sources' cell● ± 0.5 °C/hour
Diameter of substrate, no more than● 40 mm
Maximum temperature of the sample heating in the film growing
chamber, no less than
● 800 °C
Range of the operating velocities of continuous rotation of the
sample
● 0...50 min-1
Pressure of residual gases after the MBE machine bakeout and
cryopanels are filled with the liquid nitrogen, Pa (Torr), no more
than
● 1.3x10-8 (1.0x10-10)
Speed of operation of the molecular source's shutter, no more
than
● 300 ms
Possibility to heat the analytical part up to the temperature of
200° C
● guaranteed
The system of blocking and setup protection provides the
disconnection of power supply at the increase of the residual
gases pressure in the vacuum system, up to
● 5.0x10-3 Pa
(3.8x10-5 Torr)
Consumed power supply, no more than● in operating mode 10 kVA
in the heating mode 25 kVA
Mass of the setup, no more than● 2500 kg
Average service life of equipment, no less than● 10 years
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EP3 MBE machine
EPN2 CMBE for GaN
QMS-1 mass spectrometer
UHVS-4 system
VF-1 furnace
SD-40 vacuum station
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ATC-EP3 molecular beam epitaxy machine
ATC-EP3 molecular beam epitaxy machine
ATC-EP3 technical description
ATC-EP3 MBE system in minimal configuration consists of growth chamber, buffer-transport
chamber and load-lock each with separate pumping.
The growth chamber contains eight effusion cell assembly, a substrate manipulator with heating
and rotation systems, monitoring facilities and some observation windows. The whole chamber
and growth zone are equipped by two cryopanels with circulating of liquid nitrogen. The pumping
system includes two 400 l/s ion pumps and liquid nitrogen cooled Ti-sublimation pump.
The liquid nitrogen consumption of the whole ATC-EP3 system is less then 20 l/hour.
Evaporation cell assembly is situated on a 400 mm flange with individually mounted flanges for
up to 8 effusion cells, 8 tantalum shutters, 4 liquid nitrogen feedthroughs and pyrometric window
with protection shutter. The cells are radially placed and oriented to the substrate surface to
ensure high fluxes uniformity. Each effusion cell has a separate water cooling shroud. The cells
are made of high purity refractory materials and pyrolitic boron nitride (pBN) in hot zones. Each
cell consist of a 6-layer tantalum shields, large area foil heater providing fine temperature
stability, W-5%Re/W-20%Re thermocouple and conical form crucible. Tantalum cell shutters are
pneumatically activated with shutter control unit and can be activated either manually or by
computer.
Substrate heating module is mounted on an individual flange. It is designed to provide high
temperature uniformity over the substrate. The heater is at adjustable stationary position and
heats the back side of the rotating substrate holder mounted on the wafer manipulator. Only
high purity refractory materials and pBN are used in the construction of a heater assembly.
Temperature feedback from W-Re thermocouple allows to maintain temperature during epitaxial
process. Maximal operative temperature is 800oC with stability ± 0.5 oC.
Wafer manipulator allows to rotate the substrate without increasing of its contamination by the
motor drive or manually and has three degrees of freedom for wafer moving. Substrate holder is
made of high purity molybdenum and fixed on the manipulator by bayonet fitting. Substrate
holder may be designed to In-soldering as well as In-free mounting.
Monitoring facilities include Reflection High Energy Electron Diffraction (up to 20 keV, X-Y
electrostatic scan facility) and Quadrupole mass-spectrometer (0? 300 amu). They allow to
calibrate molecular beams, to control the epitaxial growth process and analyze residual gas
pressure. The pirometer system is also available.
The buffer-transport chamber is separated from the growth one and load-lock by the same gate
valves and is pumped by 160 l/s ion pump. It can be supported by a liquid nitrogen cooled
Ti-sublimation pump. This chamber allows to accumulate up to nine wafers. A mechanically
coupled transfer mechanism with ergonomically well positioned observation windows makes easy
the loading of the wafer holder and carries it in any direction straightforward. Load-lock has a
speed door, cassette for 3 holders, and individual pumping.
Video RHEED data acquisition system is developed for RHEED- pattern writing and digital
processing in real time scale. It allows to registrate temporal oscillations of RHEED-pattern
intensity over the chosen area and to define the period of oscillations (epitaxial layer growth
ATC-EP3 description
ABOUT ATC-SD
ATC - Semiconductor Devices was founded in 1992. Its staff consists of highly qualified
specialists in fundamental and applied solid-state physics, semiconductor physics and
semiconductor technology. They have huge experience of research work in the Soviet and
Russian Academy of Science institutions, such as Ioffe physical-technical institute and
Politechnical institute in Saint-Petersburg. Now the firm tightly collaborates with well-known
Radioelectronic institute (Moscow) and Vavilov State Optical institute (Saint-Petersburg).
Working within the Saint-Petersburg Regional Foundation for Scientific and Technological
Development, ATC-SD participates in Russian and European grant projects.
Nowadays ATC-SD is the leader in developing high
power laser diode technology in Russia.
ATC-SD does not set the goal to become a large manufacturer of optoelectronics components. It
develops new technologies in the field of high power laser diodes and transfers them with full set
of necessary equipment.
Products and Technologies
Technologies developed by ATC-SD are suitable for manufacturing all three basic elements of
optoelectronics - laser diodes, photodiodes and light-emitting diodes. ATC-SD carries on
intensive research in this field, including very promising GaN technology for blue-green light
emitting diodes and laser diodes.
First stage of the technological process is growing of thin layers of different semiconductor
materials. ATC-SD uses the Molecular Beam Epitaxy (MBE) technology for that purpose.
During the second, so called «post-growing» stage of the technological process, the grown laser
heterostructures are being additionally processed on a special equipment, and at the end the
fully finished products are created.
ATC-SD is among the few in Russia
which use MBE technology to grow the laser heterostructures.
ATC-SD has own production facilities, and performs a full-cycle low-scale production of several
market products using MBE-technology: (laser diodes with output power up to 4 Watts, laser
arrays and others). Capacity is enough to satisfy all Russian producers of devices based on high
power laser diodes.
Being supplied to many Russian and Western companies, all the products were independently
tested, and the results show high reliability of the devices and their fitting to the highest modern
standards.
Technology transfer
ATC-SD has successful experience not only in R&D and manufacturing,
but in transfer of its technology to the South-East Asia.
About ATC-SD - developer and manufacturer of high power laser diodes
Oriental scientists express intent interest to research work being held in ATC-SD. In 1994
scientists of ATC-SD provided training programme at the Semiconductor Institute of the Chinese
Academy of Science. Joint research was carried out in the field of laser heterostructures
manufacturing.
Within the framework of the program of scientific and technological co-operation (1995-1997)
two MBE-machines, post-growing equipment and related technologies for high power laser diodes
manufacturing were transferred to one of Optoelectronic Research Institutes of China. Necessary
training was provided to the Chinese personnel.
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About ATC-SD - developer and manufacturer of high power laser diodes
PRODUCTS
We offer products manufactured using ATC-SD original technology
Our devices demonstrate characteristics at the top level of this technology
You can buy them, or make them yourself using our technology
High power semiconductor laser diodes
Laser linear arrays
Cooling heads
Focusing optics
Laser Diode Driver LDD-10
Atcus-15 medical device
Diode pumped solid-state lasers
Is ATC-SD capable of making a customized product?
What are the terms of delivery?
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High power laser diodes and devices made on their base offered by ATC-SD
Laser linear arrays
25 and 40 Watts QCW Laser Linear Arrays
ATC-Semiconductor
Devices offers laser
linear arrays
operating in
Quasi-Continuous
Mode. Nominal
duty factor is
1/100, pulse width
is 200 mksec. The
devices are
manufactured
using our special
chip design -
Partially
Phase-Locked
Array.
Model ATC-Q25-5
has output optical
power of 25W
QCW, model
ATC-Q40-5 has
40W QCW. These
arrays may be
supplied on the
open heat-sink, as
well as packaged
into ATC case. The
open-heat-sink
type of package
(see drawing to the
right) is most
suitable for lateral
pumping of
solid-state lasers.
Since the emitting
area of the arrays
occupies more than
70% of the total
heat-sink width (5
mm and 7 mm
respectively), this
package allows to
obtain high
uniformity of the
energy distribution
lengthwise the
pumped crystal.
Laser linear arrays of 25-100W QCW
Laser arrays
ATC-Q25-5 and
ATC-Q40-5 may
also be supplied
packed into ATC
case, and then
placed onto the
ATC-03H cooling
head (see photos
to the left).
ATC-03H cooling
head has built-in
Peltier
thermocooler,
thermistor and
mini-fan (on the
bottom).
Dimensions of
ATC-03H are 92 x
75 x 90 mm.
Specifications
100 Watts QCW Laser Linear Arrays
Laser linear arrays of 25-100W QCW
Using technologies developed by ATC -
Semiconductor Devices, our researches have
developed laser arrays which have emitting
dimensions of 9,600x1 mkm and 100 Watts output
optical power in quasi-constant wave mode.
Now these arrays model ATC-Q100-10 are
commercially available. They may be supplied on the
open-heat sink.
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Laser linear arrays of 25-100W QCW
Cooling heads
Left to right: 02H, 03H, 01H
ATC-SD laser diodes in CW operation mode or pulsed one with pulse
duty factor more than 0,3% and pulse duration more than 500 ms
require additional cooling. Three types of cooling heads are offered.
The first one - ATC-01H serves for temperature stabilization under
long-term laser operation packed in TO-3 case. The compact head is
specially designed for LDs with CW output power up to 100 mW. The
head may contain a coaxial connector for pulse operation.
The second model - ATC-02H is used with laser diodes with CW output
power from 100 to 1500 mW, packed into TO-3 case which has built-in
Peltier thermocooler. ATC-02H has slide-contacts connector for standard
TO-3 cases, which allows to replace the laser diodes easily.
The third laser head - ATC-03H has incorporated Peltier thermocooler
with higher efficiency and is being used with laser diodes packed into
ATC case. Besides that, ATC-03H is equipped with mini-fan as a forced
cooling system. As a result, this head ensures safe use of laser diodes
with CW output optical power of 3 Watt and more.
ATC-02H and ATC-03H may be completed with additional optics
(collimating or focusing).
All the heads are simple in use, portable, reliable, and ideal for the
long-term operation with the ATC laser diodes.
ATC laser heads specifications
Parameters ATC-01H ATC-02H ATC-03H
Dimensions, mm 25 x 50 95 x 75 x 63 95 x 75 x 90
Weight, g 50 460 750
Connector type wires RS type
Package types ATC TO-3 ATC
On the drawings below dimensions are given in millimeters, tolerances are ± 0.25 mm.
ATC-SD cooling heads for laser diodes
ATC-SD cooling heads for laser diodes
Focusing optics
Model ATC-5022 ATC-5032
General view
Mounted onto the cooling
head
Dimensions Length 38 mm 63 mm
Diameter 27 mm 30 mm
Optical scheme
Click for technical drawings
Spot characteristics
Distance from the ouput
aperture 20 mm 7 mm
Part of optical power
which gets into the spot 90 % 80 %
Emitting source
Focusing optics
Spot size
Laser diode
model Output
power Emitting
dimensions
ATC-C1000-150
1 W 150 x 1
mkm 200 x 200 mkm 60 x 60 mkm
ATC-C3000-500 3 W 500 x 1
mkm
600 x 600 mkm 200 x 200 mkm
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Focusing optics
Focusing optics ATC-5022 and ATC-5032
Focusing optics drawings
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Focusing optics drawings
Specifications
(Typical values for 790...820 nm @ +25C and 0,75 NA collection optics)
CW Laser Diodes
Model
CW
Oper.
Output
Power
Differential
Quantum
Efficiency
Total
Conversion
Efficiency
Emitting
Dimensions
WxH
Threshold
Current Operating
Current,
typical
Operating
Current,
no more
than
Oper.
Voltage
mW mW/mA % um mA mA mA V
ATC-C50-35 50 1.1 25 35x1 100 160 190 1.7
ATC-C100-35 100 1.1 30 35x1 100 210 280 1.7
ATC-C200-35 200 1.1 35 35x1 100 320 440 1.8
ATC-C300-35 300 1.1 40 35x1 100 430 650 1.8
ATC-C500-35 500 1.1 45 35x1 100 650 900 1.8
ATC-C1000-100 1000 1.05 40 100x1 250 1300 1500 2.0
ATC-C1000-150 1000 1.05 40 150x1 400 1450 1890 2.0
ATC-C1200-150 1200 1.05 45 150x1 400 1650 2190 2.0
ATC-C2000-200 2000 1.0 40 200x1 500 2500 3000 2.0
ATC-C3000-500 3000 1.0 40 500x1 1100 4100 5000 2.0
ATC-C4000-500 4000 1.0 45 500x1 1100 5100 6200 2.0
QCW Laser Linear Arrays
Model
QCW
Output
Power
(f<50Hz,
t<200us)
Differential
Quantum
Efficiency
Total
Conversion
Efficiency
Emitting
Dimensions
WxH
Threshold
Current Operating
Current,
typical
Operating
Current,
no more
than
Oper.
Voltage
W mW/mA % um A A A V
ATC-Q25-5 25 1.0 35 5000x1 8 32 39 2.0
ATC-Q40-6 40 1.0 40 6000x1 8 48 55 2.0
ATC-Q60-11 60 1.0 35 11000x1 20 80 90 2.0
ATC-Q100-11 100 1.0 35 11000x1 20 115 130 2.0
Is it possible to vary the output power of the working laser diode?
Specifications of ATC-SD high power laser diodes
Atcus-15 - High power laser device for medicine and technological
applications ATC-SD offers Atcus-15 - laser
medical device. It delivers
near-infrared energy via a 600 mkm
optical fiber.
Atcus-15 works in CW and pulsed
modes. Output power in continuous
mode is up to 15W.
E-mail us to get PDF manual.
Main technical data
Emitting wavelength (810 ± 10) nm
Output power User-adjustable from 100 mW to 15 W CW
Generation modes CW or pulse
Beam characteristic Semiconductor, multimode
Pulse duration 0.05 - 10 sec
Duty factor 1/2 - 1/99
Exposure 1 sec - 30 min
Delivery optical fiber diameter 600 mm
Weight 15 kg max
Dimensions 170 x 500 x 370 mm
Input power 220/110 VAC, 50/60 Hz
Cooling requirements No external air or water cooling required,
internal thermoelectric cooling
Atcus 15 - medical laser device
Diode pumped solid-state lasers
CW green (532 nm) Nd:YAG + KTP
We manufacture diode pumped solid-state lasers with intracavity
frequency doubling. We use own laser diodes as the pumping source
for these DPSSLs, which ensures the most cost effective and reliable
solutions.
Lasers are air-cooled and have a built-in system of thermostabilization,
based on Peltier thermo-electric coolers. The laser diode driver LDD-9
or LDD-10, equipped with additional thermo-stabilization circuits,
serves as a power supply and control unit for the whole system.
DPSSLs are designed for easy installation and are ready for immediate
operation.
Main technical data
Wavelength 532 nm
CW output power up to 250 mW
Mode Single TEMoo
Beam diameter 1.5 mm
Beam divergence 1 mrad
Beam positioning stability 0.1 mrad
Polarization linear 100:1
Power stability (in 1 hour) +5%
Noise (1 mHz) <30%
Working temperature range +10C...+40C
Network power supply 220VAC/50Hz
Emitting head
dimensions 80 x 90 x 140 mm
weight 0.6 kg
Driver and control block
dimensions 236 x 105 x 300 mm
weight 3.3 kg
Diode pumped solid-state lasers offered by ATC-SD
Chemical-molecular beam epitaxy system ATC-EPN1
ATC-SD performs R&D on GaN technology using this machine. Its
main specific features are:
maximum simplicity of design and exploitation● special design for group-III nitrides growing● wide variability of the growth conditions necessary for scientific
investigations at using of new materials.
●
Material system - InGaAlN.
Better variability of the growth conditions as compared to traditional MBE
systems is provided by allowable work with wide pressure diapason of the
gaseous sources and high growth temperatures. In particular, growth of
group-III nitrides can be carried out with the V/III ratio from 1 to 1000 at
substrate temperature up to 900-1000îC (see related article The growth rate
evolution versus substrate temperature and V/III ratio during GaN MBE using
ammonia).
Base configuration:
pumping system● growth arrangement● two W-Re thermocouplers substrate temperature control● gauges for high-vacuum and forevacuum pressures● liquid nitrogen supply system●
power supply and control blocks racks●
Option: quadrupole mass-spectrometer.
Technical data
Pumping systems
3-stage: turbomolecular pump/diffusion pump/forevacuum pump.
The diffusion pump is needed at maximal NH3 flux, since the
diffusion pump increases efficiency of pumping H2, which comes
from NH3 disintegration.
●
ion pump (for standby stage)● two LN criopanels● background pressure at the sources switched off 1.10-9 Torr●
EPN-1 CMBE machine
Growth arrangement
sample holder diameter - 40 mm● maximum substrate temperature - 950 oC (substrate temperature
up to 1050 oC is available by special order)
●
5 effusion cells, BN crucibles, maximum temperature - 1250 oC● 2 entries for gas sources (up to 5 entries are available by special
order); system for gas component supply adopted for hydrogen
containing species (in the case of NH3 the system provides
ammonia flux near the substrate from 1015 cm-2c-1 to 1018
cm-2c-1)
●
pyrometric window● laser interferometer control system●
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EP3 MBE machine
EPN1 CMBE for GaN
QMS-1 mass spectrometer
UHVS-4 system
VF-1 furnace
SD-40 vacuum station
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EPN-1 CMBE machine
High vacuum quadrupole mass spectrometer QMS-1
Outstanding possibility for analysis of gas substances, volatile liquid
substances and molecular beams being used in the customer’s vacuum
equipment.
Application - Mass-spectrum analysis in R&D investigation in the
following fields:
surface science, solid state physics, molecular beam monitoring, residual
atmosphere control, chemistry, biology, biochemistry, ecology.
Features
High sensitivity, mass range up to 500 AMU, high resolution, UHV design,
Mo-Re alloy made electrodes block, visual and on-tape mass-spectrum
registration, simple operation, connection to any vacuum system through
appropriate transition unit.
Standard configuration includes mass-analyzer unit and control rack.
Computer control and registration system with special software may be
delivered optionally.
Technical data
Analyzing mass range● in 1.5 MHz mode 1...400 AMU
in 1.2 MHz mode 2...500 AMU
Working pressure in customer's vacuum chamber● < 1x10-7 Torr
Resolution on 10% peak amplitude,
no less than
● in all mass range R=M*
near mass unit 28 R=3M*
Sensitivity of nitrogen with resolution 28, working frequency 1.5
MHz and scanning time for one peak 10 sec
● 3x10-4 A/Torr
Ion currents registration range●
in Faraday cylinder mode 1x10-11...3x10-9 A
in VEU -2A multiplier mode 1x10-17...5x10-12 A
in VEU-6 multiplier mode 2x10-18...2x10-15 A
Scanning time● 10-2...104 sec
Backout temperature, no more than● 300 ° C
Sizes: mass-analyzer unit full length 520 mm, in vacuum length
350 mm, DU 125 flange mounting control rack
● 700 x 600 x 2000
mm
* - here M is AMU value in the mass unit scale in the point of resolution control
QMS-1 quadrupole mass spectrometer
Specialized GaN MBE Research System ATC-EPN2
ATC-EPN2 is the MBE system specially designed for Group
III-nitrides epitaxy. The flow of purified ammonia plays as a
nitrogen source- this method demonstrates a number of
principal advantages as compared with plasma-activated
nitrogen and therefore becomes widely used.
ATC-EPN2 growth chamber design followed by reinforced
pumping system allow to reach V/III ratio from 1 up to
1000 while keeping GaN growth rate of 1 m /h under the
total pressure not more than 3·10-5 Torr.
The main novel solution is that ATC-EPN2 system allows
varying V/III ratio over the wide range. This feature is
provided by the original water cooled sample heater
manipulator and the specific arrangement of the
ammonia inlet in the growth chamber. As a result, the NH3
cracking takes place practically at the substrate only (the
common situation is that hydrogen, originated from
ammonia cracking on heated surfaces, is poorly pumped by
turbo-molecular pumps and terminates the MBE growth
mode).
ATC-EPN2 MBE system enables essentially wider range of
technological parameters in comparison to conventional
AIIIBV MBE systems adapted to nitrides growth. Our recent
GaN growth studies showed that increased V/III ratio leads
to remarkable increase of PL intensity● smoother surface of the layer● enhanced acceptor (Mg) activation.●
ATC-EPN2 is:
Intended and designed specially for the growth of
GaN, InGaN, AlGaN by MBE using NH3 as active
nitrogen source
●
Compact and user friendly system for scientific
research
●
The equipment for advanced research:
Extended resources for varying of the V/III ratio
during the growth.
●
Special attention paid on the accuracy of absolute
sample temperature measurement, the traditional
●
ATC-EPN2 chemical-molecular beam epitaxy system
problem in MBE.
Novel design- the complex solution for maintaining of
extremely high gas fluxes:
Full water cooling of the main manipulator (including
sample heater unit)
●
Three stage pumping● Special arrangement of the gas inlet●
Customer’s support and training programs:
Together with the System we also provide optimal
growth parameters (with the demonstration of real
growth processes):
for GaN buffer layer on sapphire substrates❍ for undoped GaN layers❍ for n-type (by Si) and p-type (by Mg) doping❍
●
Above item is included into the training service,
provided for Customer acquaintance with our MBE
systems
the training program could be extended, by the
Customer’s special order, to include also the
growth of InGaN layers and quantum wells
❍
●
On completing of the warranty period (1 year)
post-warranty service is available by Customer's
special order
●
What can this equipment really do?
ATC-EPN2 System description
Growth chamber
Water cooled main manipulator
Substrate mounting block❍ Resistive IR heater❍ Radiation shield❍ Two W-Re thermocouples❍
●
LN2 cryo-panel●
Gas inlet block●
Sources block
5 shuttered ports with effusion cells (PBN crucible, Ta
resistive IR-heater)
the Sources block for 3 effusion cells is available
optionally (this Source block could be used for
the basic growth study or for microelectronic
devices manufacturing)
❍
the “hot lips” effusion cells are available
optionally
❍
●
ATC-EPN2 chemical-molecular beam epitaxy system
Shuttered optical window for pyrometer● Optical window for laser interferometer● LN2 cryo-panel●
Load-lock/ transfer system
Loading chamber● Speed loading door● 2-positioned cassette for substrate holders
4-positioned cassette is available by special
order
❍
●
Manipulator● Viewports●
Pumping system
For growth chamber
Three-stage: turbo-molecular (with gate valve)/
diffusion / rotary pump (the diffusion pump
essentially increases an efficiency of H2 pumping
and is needed at maximum NH3 fluxes)
❍
Ion pump with gate valve for standby regime❍
●
For load-lock/ transfer chamber
Ion pump with gate valve / rotary pump❍
●
Ammonia supply system
Two stage ammonia distillation, Peltier controller● Mass-flow controller●
Laser interferometer
Quadrupole mass-spectrometer
UHV gauges
Pyrometer
IBM PC based process control system
ATC-EPN2 Technical data
Background pressure (sources switched off)● 1.10-9 Torr
Sample holder diameter● 40 mm
Maximum substrate temperature● 1000 oC
Maximum effusion cells temperature● 1250 oC
Ammonia flux near the substrate● 1015...1018 cm-2*sec-1
What can this equipment really do?
ATC-EPN2 chemical-molecular beam epitaxy system
The MBE system ATC-EPN2 was put into operation in the beginning of 1999. It was preceded by
intensive tests (during 8 months) of the previous model, EPN1, in order to try as much as
possible all the potentialities of the equipment and to work out initial stages and basic regimes of
the GaN growth. The main results are as follows:
Technologic regimes allowing growth of undoped GaN (residual n-carrier concentration at
level < 5? 1016cm-3) with mirror-like surfaces (Fig.1) have been found.
●
Fig. 1. Growth pattern of undoped GaN film with mirror-like surface
Constructive features of ATC-EPN systems were found to extend essentially the range of
main working parameters as compared to the traditional MBE systems adapted for nitride
growth. For example, V/III ratio as high as 1000 can be obtained while keeping the growth
rate at usual values (Fig.2). This feature occurred to be very useful for p-doping: the
Mg-doped samples grown at V/III ratio close to 500 demonstrate a hole concentration as
high as 7? 1017cm-3, what is at the best level reported so far in literature for GaN layers
doped with Mg by MBE. On the other hand, the higher V/III ratio, the smoother the GaN
layer surface and the more intensive its band-edge photoluminescence. This effect was for
the first time reported by the group of CNRS (France)( N. Grandjean et.al., Jpn. J. Appl. Phys. 38, 618
(1999)). Note, however, that used there RIBER 32P MBE system, adapted for ammonia
process, was limited by V/III ratio of 100.
●
ATC-EPN2 chemical-molecular beam epitaxy system
Fig. 2. Effect of V/III ratio on the GaN growth rate
Original methods were worked out to calibrate an absolute substrate temperature with an
accuracy ± 10 K (while the relative temperature stability not worse than ± 5 K). It helps
not only to maintain working regimes more reliably, but also to carry out various
fundamental and applied scientific research. For example, an important thermodynamic
properties of GaN were experimentally determined using ATC-EPN2 system (A.N. Alexeev et.al.
MRS Internet J. Nitride Semicond. Res. 4, 6 (1999)). In this work the important methodological result
was also obtained: for the first time the laser reflectivity oscillations during GaN
evaporation were detected owing to extremely smooth surface previously formed during
the growth.
●
Si-doped samples demonstrate electron concentration and a Hall mobility of 5? 1018cm-3
and 150 cm2/V? s (the usual values for n-layers in optoelectronic nitride devices),
respectively.
●
The problem of In insertion into GaN-based heterostructures as thin strained InGaN layers
(quantum wells) is another of hot topics in current world’s nitride researches. The simple
and efficient experimental method to determine maximal possible In flux at given substrate
temperature was worked out and tested using ATC-EPN2 system (V.P. Chaly et.al. J.Cryst. Growth,
206, 147 (1999).). This knowledge is very important for InGaN quantum wells growth in wide
range of substrate temperatures (note that the essential progress in bright LEDs
manufacturing by MOCVD was related with increased temperatures of InGaN growth (Sh.
Nakamura. Sol. St. Comm. 102, 237 (1997)). On the base of these results InGaN multiple quantum
wells were grown on ATC-EPN2 at substrate temperatures up to 750° C, what is essentially
higher than ever reported for nitrides growth by MBE. These InGaN quantum wells (Fig.3)
can be used as an active layers in light emitting devices.
●
ATC-EPN2 chemical-molecular beam epitaxy system
Multi-purpose ultra high vacuum system UHVS-4
Wide range of R&D works under Ultra High Vacuum (UHV) conditions
Applications
preliminary preparation of details and units for MBE, CBE etc. (for
example, molecular sources annealing by their own heaters, testing)
●
several kinds of electro-physical experiments under UHV●
Features
UHV base pressure design, high versatility, two chamber design, simple in
maintenance, easy load-lock of the samples into the vacuum chamber,
precise manipulator for 3D-positioning of the sample, high voltage or current
lead-in, possibility to connect with quadrupole mass-analyzer, special system
design according to customer wishes.
Standard configuration includes research chamber, semple preparation
chamber with load-lock, and control and supply rack.
Accessories
Rotation mechanism, flange with electrical feedthroughs, swinging
mechanism, manipulator of sample holder, vacuum gauge, viewports DN100,
DN63, DN35
Technical data
Residual pressure in working chamber● 7.10-11 Torr
Time of pumping from atmosphere to pressure 6.65.10-8
Pa (5.10-10 Torr)
● 20 hours
Bakeout temperature of UHV elements on the pumping
chamber
● 200 oC
Number of working flanges on the research chamber● 12
Number of working flanges on the sample preparation
chamber
● 11
Volume of each chamber● 250 (diameter) x 350 mm
Pumping●
two ceolitum pumps for primary
vacuum 2
400 and 250 l/sec ion pumps for
UHV 2
Ti-sublimation pump for UHV 1
Power supply● three phase 380/220 ± 10%,
50 Hz
Maximum power consumption● 7.5 kW
vacuum system 1950 x 2420 x 1765 mm
Multi-purpose ultra high vacuum station UHVS-4
Size● control and power supply rack 600 x 650 x 1600 mm
Weight● vacuum system 500 kg
control and power supply rack 200 kg
Home | About | Know-How | Products | Equipment
EP3 MBE machine
EPN2 CMBE for GaN
QMS-1 mass spectrometer
UHVS-4 system
VF-1 furnace
SD-40 vacuum station
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Multi-purpose ultra high vacuum station UHVS-4
High-temperature vacuum furnace VF-1
Excellent potential in the field of various material high vacuum annealing.
Application areas
annealing of wide range of vacuum materials for purposes of vacuum
and electronic industry: stainless steel, W, Ta, W-Re, BN, Mo, pyrolitic
Ti, etc.
●
technological soldering of refractory materials and ceramics using high
temperature solders
●
UHV technics support (MBE, CBE, etc.): preparation of details and units● possibility of connection with quadrupole mass-analyzer QMS-1 in a
special configuration to investigate the high-temperature outguessing
of materials in vacuum
●
Features
UHV design, annealing temperature up to 1800îC, temperature control by
W-Re thermocouple, low residual pressure, easy loading, high uptime,
possibility of process programming
Technical data
Working annealing
volume
● diameter 80 mm
height 200 mm
Maximum temperature● 1800 oC
Working vacuum level● 7.5.10-5 Torr
Accuracy of heating temperature regulation● ± 30 oC
Stability of heating temperature● ± 15 oC
Vacuum level (at room temperature conditions)● 2.10-10 Torr
Maximum time of temperature decrease from 1000
oC to 100 oC without using of cooling system
● 3 hours
Type of cooling● water cooling
Pumping● two ceolitium pumps, 400 l/sec ion
pump, Ti-sublimation pump
Temperature control● W-Re thermocouple
Maximum power consumption● 15 kW
VF-1 high temperature high vacuum furnace
Dimensions● furnace vacuum rack 1600 x 700 x 920 mm
control and power supply
rack 800 x 620 x 650 mm
Home | About | Know-How | Products | Equipment
EP3 MBE machine
EPN2 CMBE for GaN
QMS-1 mass spectrometer
UHVS-4 system
VF-1 furnace
SD-40 vacuum station
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VF-1 high temperature high vacuum furnace
Universal vacuum station SD-40 (T, M, E, G)
Universal vacuum station SD-40 is ideal for scientific applications and
advanced technology development. SD-40 is compact and incorporates a large
quantity of optional equipment to design the electronic devices based on Si,
Ge, A3 B5, A2 B6 compounds and other materials.
Features
High fidelity, economy, small size, flexibility, service simplicity, ecological
clarity of processes, possibility to create a flexible technological line
Applications
R&D investigation and small scale production in electronics, medicine,
metallurgy, chemistry
Possible delivery sets
SD-40 Basic unit is used to provide technological processes in vacuum and at
low pressure atmosphere of controlled gas mixture. Its configuration includes:
mainframe, electromagnetic valves, venting system, vacuum chamber,
vacuum measuring unit, rotary pump, piezovalve, turbomolecular pump, gas
filling system, buffer bottle, control unit, power supply.
Universal vacuum station may be supplied in the following configurations:
SD-40T - Basic unit with resistive evaporation unit●
SD-40E - Basic unit with dry etching unit●
SD-40M - Basic unit with magnetron sputtering unit●
SD-40G - Basic unit with electron evaporation unit●
Technical data
Residual chamber pressure● < 1.3 . 10-5 Pa
Chamber volume● 40 L
Rotary pump productivity● 5/5 L/sec
Turbomolecular pump productivity● 500 L/sec
Liquid nitrogen trip volume● 2L
Operating mode● automatic and manual
Preoperating time● 2 hours
Power supply● three phase 220/380V, 50Hz
Power consumtion● no more than 5 kW
Water outlet● 2 L/min
Dimensions● 600 x 1190 x 1520 mm
SD-40 universal vacuum station
Resistive evaporation unit SD-40T
Resistive evaporation unit with two evaporators
Set of evaporators
Applications
In complete with the basic unit SD-40 it is used
for: metallic and alloy films deposition● fabrication of nonmetallic and composite
layers
●
fabrication of multilayer structures● Ohmic and Shottky contacts formation● thermal treatment in vacuum or in inert
gas atmosphere at low pressure
●
Features
three independent evaporation units● both film deposition and thermal
treatment at the same process
●
two possible process geometry: “from
down to up” and “from up to down”
●
sample temperature variation during
deposition
●
different specimen holders● computer control of the process●
Configuration
set of evaporation units and holders● protective shieldings● planetary type specimen holder for 2-inch
substrate with a heater
●
power supply●
The main technical parameters
Sample temperature
Maximum specimen
dimensions
Layer thickness
uniformity
up to 3000
C
50 x 60
mm
5%
SD-40T Resistive evaporation unit
SD-40T Resistive evaporation unit
Dry etching unit SD-40E
Ion gun
GaAs etching rate via ion energy
(Ar pressure P=3x10-4 Torr)
AlGaAs/GaAs-laser structure profile
fabricated by dry etching
Applications
In complete with the basic unit SD-40 it is used
for collimated ion beam etching of both single-
and multicomponent materials for:
Sample thinning● Surface cleaning● Selectiveless etching of multilayer
structures
●
Destroyed and oxide layer removing●
Surface passivity by reactive gases●
Features
wide range of ion energy● technological operations followed by the
etching can be done at the same process
●
additional active gas can be supplied to
the etching zone
●
separated ion current and ion energy
control
●
rotating substrate holder●
variable incident angle●
Configuration
ion gun● additional power supply 2.5kV/600 mA● rotating sample holder 50 mm in
diameter
●
The main technical parameters
Substrate
diameter
Range of ion
energy
Power supply
40 mm
20 eV - 2 keV
2.5 kV/ 600 mA
SD-40E dry etching unit
Magnetron sputtering unit SD-40M
Magnetron sputtering unit
Applications
In complete with the basic unit SD-40 it is used for preparation of:
multilayer interferential mirrors● heatproof layers● transparent conductive films● mask● metallic films, high melting point ones including● semiconductor and piezoelectric layers● high temperature superconductivity layers● layers for sample annealing following by implantation●
Features
three targets● both inert and active gas atmosphere● two independent gas channels● three substrate holders● controlled substrate heating●
laser interferometer control of layer thickness●
Configuration
a set of three water-cooled direct current discharge magnetrons● rotative sample holder for three substrates● a set of screen and shutters● double chanell precision piezovalve● laser interferometer● power supply●
The main technical parameters
Sample temperature
Substrate diameter
Target diameter
Layer thickness
uniformity
Power supply
up to 3000 C
40 mm
40 mm
5%
2.5 kV / 600 mA, direct
current
SD-40M Magnetron sputtering unit
Electron evaporation unit SD-40G
Electron evaporator
Applications
In complete with the basic unit SD-40 it is used for deposition of:
optical covering● heatproof layers● protective films●
decorative coverages●
Features
dust materials evaporation● high melting point materials and dielectrics evaporation● laser interferometer control●
Configuration
electron evaporator● set of metal (Mo, Ta) and graphite cups● laser interferometer● power supply.●
holder●
The main technical parameters
Sample
temperature
Substrate diameter
Cup diameter
up to 300îÑ
up to 40mm
up to 7mm
SD-40G Electron evaporation unit
EVENTS
We presented laser diodes, accessories and medical laser devices at the International
Trade Fair for Laser Technology & Technical Optics, which was held in Hong Kong
Convention and Exhibitions Centre on 11-14 October, 2000.
Hong Kong pulses as an information and sourcing centre for new production technologies.
It is strategically placed at the gateway to China and the centre of Asia, serving as a
perfect connecting point to all major laser markets in the region specifically China,
Taiwan, Korea, Japan and Singapore. Asian countries recognise the importance of
applying high tech advances in the manufacturing sector and Hong Kong's close proximity
provides the direct access. It is a close link to these key target markets.
Visitors from all the globe expressed close interest to our products. Purchase contracts
concluded. Mutually beneficial contacts in the field of semiconductor technology transfer
were established.
Visit of USA congressmen and NASA director
On August 30th, 2000, delegation of US governmental officials visited ATC-SD premises.
Alexander Ter-Martirosyan, General Director of ATC-Semiconductor Devices, presented our
company, products and fields of activity.
On photo, Alexander Ter-Martirosyan demonstrates medical laser Atcus-15 to US officials.
New method of cancer treatment with use of Atcus-15 aroused vivid interest of honourable
guests.
In the middle: NASA Administrator Daniel S. Goldin.
ATC - Semiconductor Devices News
Visit of Russian Minister of Science and Technologies
ATC - Semiconductor Devices News
On March 15th, 2000, delegation of top-level Russian executives visited ATC-SD premises.
The Ministers were impressed by our achievements in the field of semiconductor
technologies. A special governmental program supporting our research of the GaN growth
technology was deliberated.
On photo, left to right:
Andrey Fursenko - Director of Regional Foundation for Scientific and Technological
development
Alexander Ter-Martirosyan - General Director of ATC-SD
Victor Chaly - Chairman of ATC-SD Director Board
Michail Kovalchuk - Director of Institute for crystallography of the Russian Academy of
Sciences
Igor Sokolov - Leading scientist of our MBE Department
Michail Kirpichnikov - Russian Minister of Science and Technologies
Gennady Tereshchenko - Deputy Minister of Science and Technologies
Article in European Semiconductor
European Semiconductor magazine published an article about ATC-Semiconductor Devices (March 1999 issue, pages
63-64).
The article is called "Russian-grown know-how for sale" and is devoted to our facilities, semiconductor equipment and
related technologies that we develop and offer for sale.
ICONO'98 SPIE Conference in Moscow
The 16th International Conference on Coherent
and Nonlinear Optics (ICONO'98) was held on
June 29 - July 3, 1998, at the Presidium Building
of the Russian Academy of Sciences, Moscow,
Russia.
ATC-SD participated in the technical Exhibition
related to the Conference, as well as
Spectra-Physics, Coherent, Polaroid LD, Spiricon
and many others.
ATC - Semiconductor Devices News
Council of Federations Members Visit ATC-SD
On January 27-29th, 1998, the first outdoor session of Council of Federations, the higher chamber of the Russian Parliament, was held in
Saint-Petersburg. On January 27th, sixty members of the Council visited several Saint-Petersburg enterprises - Kirovsky plant, Beer factory "Baltica",
Regional Foundation for Scientific and Technological Development (RFSTD), and ATC - Semiconductor Devices.
Members of the Council familiarized themselves with ATC-SD production facilities, equipment and products, expressing explicit interest to the speech
performed by ATC-SD General director, Dr. Alexander Ter-Martirosyan.
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ATC - Semiconductor Devices News
MEDICINE This page is under costruction. Sorry for any
inconvenience.
Atcus-15 - medical laser device
Atcus-15 usage tables ATTENTION! Corrected on March 15, 2001.
Atcus-15 usage tables (in Russian). ATTENTION! Corrected on March 15, 2001.
New! Treatment of chronic rheum (in Russian).
Selective laser hyperthermia of malignant neoplasms - article to SPIE.
Selective laser hyperthermia of malignant neoplasms - short version of the same article.
Treatment of cutaneous vascular displasia
Laser treatment cases
Usage of Atcus-15 in cosmetology (in Russian).
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Medicine Page of ATC-SD
Usage of Atcus-15 Ðóññêèé
This page is under costruction. Sorry for any inconvenience.
Table 1: Indication scores
0 = contraindication for the laser surgery
1 = laser surgery is not recommended
2 = laser surgery can be used if other techniques have failed
3 = laser surgery is possible but is in competition with other techniques
4 = good indication; laser surgery is better than other techniques
5 = absolute indication for the laser surgery; other techniques are not recommended
Table 2: Dermatology
Disease / structure Score Treatment method
0 1 2 3 4 5 non-contact coagulation contact
cutting interstitial
coagulation
Condylomata acuminata 10-15 W / 0.3-0.5 s / 0.5 s 8-14 W / cw -
Mollusca contagiosa 10-15 W / 0.3-0.5 s / 0.5 s - -
Warts 10-15 W / 0.3-0.5 s / 0.5 s 8-14 W / cw -
Benign tumors of the
skin
small 10-15 W / 0.3-0.5 s / 0.5 s - -
large 10-15 W / 0.5 s / 0.5 s 8-14 W / cw 4-5 W / cw
Inoperable cutaneous /
subcutaneous metastases of
various tumors (palliative
treatment)
10-15 W / 0.5 s / 0.5 s 8-14 W / cw 4-5 W / cw
Inoperable
semimalignant and
malignant skin tumors
(Basalomas, Bowen's
disease, Kaposi
sarcomas)
small 10-15 W / 0.3-0.5 s / 0.5 s - -
large 10-15 W / 0.5 s / 0.5 s 8-14 W / cw 4-5 W / cw
Keloid / hypertrophic scars 4-6 W / 0.3-0.5 s / 0.5 s - 4-5 W / cw
Leucoplakia 4-6 W / 0.3-0.5 s / 0.5 s - -
Wound debridement 10-15 W / 0.5 s/ 0.5 s 8-14 W / cw -
Table 3: Vascular system (dermatology, surgery, ENT, gastroenterology)
Disease / structure Score Treatment method
0 1 2 3 4 5 non-contact coagulation contact
cutting interstitial
coagulation
VASCULAR MALFORMATIONS
port-wine stains (PWS) 4-6 W / 0.3-0.5 s / 0.5 s - -
tuberous transformation of PWS 8-12 W / 0.3-0.5 s / 0.5 s - 4-5 W / cw
venous, artero-venous 12-15 W / cw - -
irradiation through an ice cube 8-12 W / 0.3-0.5 s / 0.5 s - 4-5 W / cw
lymphangiomatous, mixed 12-15 W / cw - -
irradiation through an ice cube
HEMANGIOMAS
plane 8-12 W / 0.3-0.5 s / 0.5 s - -
tuberous 8-12 W / 0.3-0.5 s / 0.5 s - 4-5 W / cw
irradiation through an ice cube 12-15 W / cw - -
Facial telangiectasia 4-6 W / 0.3-0.5 s / 0.5 s - -
Atcus-15 usage tables
Spider nevi 4-6 W / 0.3-0.5 s / 0.5 s - -
Lip angiomas - small 8-12 W / 0.3-0.5 s / 0.5 s - -
Lip angiomas - large 8-12 W / 0.5 s / 0.5 s - -
Hemangioma senilis 8-12 W / 0.3-0.5 s / 0.5 s - -
Perforans varices - -
6-8 W / cw
intraluminally
with NaCl
rinsing
Leg telangiectasia 5-7 W / 0.5-1.0 s / 0.5 s
with cooling spray - -
Table 4: Oral cavity, pharynx *
Disease / structure Score Treatment method
0 1 2 3 4 5 non-contact coagulation contact cutting interstitial
coagulation
Adenoidal growth - 8-14 W / cw -
Gingival hyperplasia - 8-14 W / cw -
Velum partial resection (OSAS) - 8-14 W / cw 4-5 W / cw
Tonsils tonsillotomy - 8-14 W / cw -
tonsillectomy - 8-14 W / cw -
Tumors of the
tongue benign 10-15 W / 0.5 s / 0.5 s 8-14 W / cw 4-5 W / cw
malignant (resection) - 8-14 W / cw -
Oral fistula 4-6 W / 0.5 s / 0.5 s
(coagulation of fistula ostium
after coagulation of fistula
lumen) -4-6 W / cw
intraluminally
Uvula resection (treatment of snoring) - 8-14 W / cw -
Aphthae 2-4 W / 0.3-0.5 s / 0.5 s - -
Leucoplakia 4-6 W / 0.5 s / 0.5 s - -
*these parameters should be clinically confirmed
Table 5: Upper respiratory tract *
Disease / structure Score Treatment method
0 1 2 3 4 5 non-contact coagulation contact cutting interstitial
coagulation
Epistaxis in case of Osler?s disease 6-8 W / cw - -
Laryngeal papillomatosis 8-12 W / 0.5 s / 0.5 s 8-14 W / cw -
Laryngeal
stenosis congenital - 8-14 W / cw -
scarred - 8-14 W / cw -
Malignant laryngeal tumors
(palliative ablation of tumor) 10-15 W / 0.5 s / 0.5 s 8-14 W / cw -
Nasal polyps - 6-8 W / cw 4-5 W / cw
Nasal turbinates - 6-8 W / cw 4-5 W / cw
*these parameters should be clinically confirmed
Table 6: Lower respiratory tract (bronchopulmonal endoscopy) *
Disease / structure Score Treatment method
0 1 2 3 4 5 non-contact coagulation contact cutting interstitial
coagulation
Tracheal and bronchial fistulas - - 4-6 W / cw
intraluminally
Tracheal and bronchial stenosis (benign)
congenital - 8-14 W / cw -
Atcus-15 usage tables
scarred - 8-14 W / cw -
congenital vascular disorders (CVD) 8-12 W / 0.5 s / 0.5 s 8-14 W / cw 4-5 W / cw
granulomas - 8-14 W / cw -
papillomas 10-15 W / 0.5 s / 0.5 s 8-14 W / cw -
polyps 10-15 W / 0.5 s / 0.5 s 8-14 W / cw -
Tracheal and bronchial stenosis (malignant) 10-15 W / 0.5 s / 0.5 s 8-14 W / cw -
*these parameters should be clinically confirmed
Table 7: Thoracic wall, chest cavity (thoracic surgery, thoracoscopy) *
Disease / structure Score Tratment method
0 1 2 3 4 5 non-contact coagulation contact cutting interstitial
coagulation
Biopsies (thoracoscopic lung biopsies) - 8-14 W / cw -
Decortication (thoracoscopic) - 8-14 W / cw -
Pleurodesis (thoracoscopic) 10-15 W / 0.5 s / 0.5 s - -
Resection of lung metastases
(atypical, open procedure) 10-15 W / 0.5 s / 0.5 s 8-14 W / cw -
Recurrent pneumothorax
(blebs and bullae, thoracoscopic) 10-15 W / 0.5 s / 0.5 s - -
Sympathectomy (thoracoscopic) - 8-14 W / cw -
Tumors of the thoracic wall 10-15 W / 0.5 s / 0.5 s 8-14 W / cw -
Wedge resection - 8-14 W / cw -
*these parameters should be clinically confirmed
Table 8: Gastrointestinal tract (surgery, gastroenerology) *
Disease / structure Score Treatment method
0 1 2 3 4 5 non-contact coagulation contact cutting interstitial
coagulation
Esophago-tracheal fistula - - 4-6 W / cw
intraluminally
Colorectal carcinoma,
palliative tumor mass reduction 10-15 W / 0.5 s / 0.5 s 8-14 W / cw -
Angiodysplasia 8-12 W / 0.5 s / 0.5 s - -
Polyps polyposis coli - 8-14 W / cw -
villous adenoma - 8-14 W / cw -
Esophagus
stenosis
malignant 10-15 W / 0.5 s / 0.5 s 8-14 W / cw -
scarred - 8-14 W / cw -
congenital - 8-14 W / cw -
*these parameters should be clinically confirmed
Table 9: Peritoneal cavity (laparoscopy) *
Disease / structure Score Treatment method
0 1 2 3 4 5 non-contact coagulation contact cutting interstitial
coagulation
Appendectomy ** 8-12 W / cw 8-14 W / cw -
Adhesiolysis congenital - 8-14 W / cw -
post-inflammatory - 8-14 W / cw -
Cholecystectomy ** 8-12 W / cw 8-14 W / cw -
Herniorraphy 10-15 W / 0.5 s / 0.5 s - -
Lymph node resection ** 8-12 W / cw 8-14 W / cw -
Orchidolysis ** 8-12 W / cw 8-14 W / cw -
Atcus-15 usage tables
Vagotomy - 8-14 W / cw -
*these parameters should be clinically confirmed
** combined technique: preliminary vessel coagulation, then cutting (removal)
Table 10: Peritoneal cavity (abdominal surgery) *
Disease / structure Score Treatment method
0 1 2 3 4 5 non-contact coagulation contact cutting interstitial
coagulation
Adhesiolysis congenital - 8-14 W / cw -
post-inflammatory - 8-14 W / cw -
Lymph node resection ** 8-12 W / cw 8-14 W / cw -
Parenchymatous organ resection
(liver, spleen, kidney, pancreas) - 8-14 W / cw -
Tumor resection 10-15 W / 0.5 s / 0.5 s 8-14 W / cw -
Vagotomy - 8-14 W / cw -
*these parameters should be clinically confirmed
** combined technique: preliminary vessel coagulation, then cutting (removal)
Table 11: Proctology *
Disease / structure Score Treatment method
0 1 2 3 4 5 non-contact coagulation contact cutting interstitial
coagulation
Anal stenosis ablation - 8-14 W / cw -
Anal ectropion coagulation 10-15 W / 0.5 s / 0.5 s - -
Anal marisque excision - 8-14 W / cw -
Anal fissures excision - 8-14 W / cw -
coagulation 10-15 W / 0.5 s / 0.5 s - --
Condylomata acuminata 10-15 W / 0.5 s / 0.5 s 8-14 W / cw -
Fistula
congenital - - intraluminally
4-6 W / cw
acquired - - 4-6 W / cw
post-inflammatory - - 4-6 W / cw
tumorous - - 4-6 W / cw
Hemorrhoidectomy - 8-14 W / cw -
Pilonidal cystectomy - 8-14 W / cw -
Polyps polyposis coli - 8-14 W / cw -
villous adenoma - 8-14 W / cw -
*these parameters should be clinically confirmed
Table 12: Urogenital tract (gynecology) *
Disease / structure Score Treatment method
0 1 2 3 4 5 non-contact coagulation contact cutting interstitial
coagulation
Condylomata acuminata 10-15 W / 0.5 s / 0.5 s 8-14 W / cw -
Ectopic pregnancy
isthmic tubal
pregnancy - 8-14 W / cw -
ampullary tubal
pregnancy - 8-14 W / cw -
Endometriosis 10-15 W / 0.5 s / 0.5 s 8-14 W / cw -
Hysteroscopic
benign endometrial
polyps - 8-14 W / cw -
metromenorrhagia 10-15 W / 0.5 s / 0.5 s 8-14 W / cw -
Atcus-15 usage tables
submucous fibromas - 8-14 W / cw -
uterine septa - 8-14 W / cw -
Lymph node resection (laparoscopic) ** 8-12 W / cw 8-14 W / cw -
Peritubal adhesions - 8-14 W / cw -
Polycystic ovary disease (PCOD) ** 8-12 W / cw 8-14 W / cw -
*these parameters should be clinically confirmed
** combined technique: preliminary vessel coagulation, then cutting (removal)
Table 13: Urogenital tract (urology) *
Disease / structure Score Treatment method
0 1 2 3 4 5 non-contact coagulation contact cutting interstitial
coagulation
Condylomata acuminata 10-15 W / 0.5 s / 0.5 s 8-14 W / cw -
Penile carcinoma 10-15 W / 0.5 s / 0.5 s 8-14 W / cw -
Psrostate BPH
transurethral 10-15 W / 0.5 s / 0.5 s - -
interstitial - - 4-5 W / cw
carcinoma (ITT,
perineal route) - - 4-5 W / cw
Tumors of the bladder superficial carcinoma 10-15 W / 0.5 s / 0.5 s 8-14 W / cw -
invasive carcinoma 10-15 W / 0.5 s / 0.5 s - -
Stenosis of urethra or
ureter congenital
acquired - 8-14 W / cw -
benign - 8-14 W / cw -
malignant - 8-14 W / cw -
*these parameters should be clinically confirmed
** combined technique: preliminary vessel coagulation, then cutting (removal)
Table 14: Neurosurgery *
Disease / structure Score Treatment method
0 1 2 3 4 5 non-contact coagulation contact cutting interstitial
coagulation
Hemostasis and coagulationduring or
prior to removal of tumors:
AV-malformations
astrocytomas
glioblastomas
gliomas
meningiomas
oligodendrogliomas
pituitary tumors
8-12 W / cw - -
Preparation and excision of tumors
(open surgery) - 8-14 W / cw -
Interstitial Thermotherapy (ITT) of
tumors
(stereotactic or endoscopic guidance) - - 4-5 W / cw
*these parameters should be clinically confirmed
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Atcus-15 usage tables
Ïîêàçàíèÿ ê ïðèìåíåíèþ âûñîêîýíåðãåòè÷åñêîãî âîçäåéñòâèÿ
ëàçåðíîãî àïïàðàòà ATKÓÑ-15 (810 íì)
Ãðóïïèðîâêà ïîêàçàíèé
Òàáëèöà 1: Ãðóïïèðîâêà ïîêàçàíèé
Ãðóïïà Ïîêàçàíèÿ
0 Ëàçåðíàÿ õèðóðãèÿ ïðîòèâîïîêàçàíà
1 Ëàçåðíàÿ õèðóðãèÿ íå ðåêîìåíäîâàíà
2Ëàçåðíàÿ õèðóðãèÿ ìîæåò áûòü ïðîâåäåíà ïðè íå ýôôåêòèâíîñòè äðóãèõ ìåòîäîâ
ëå÷åíèÿ
3Ëàçåðíàÿ õèðóðãèÿ âîçìîæíà, íî íå èìååò ïðåèìóùåñòâ ïåðåä äðóãèìè ìåòîäàìè
ëå÷åíèÿ
4 Ëàçåðíàÿ õèðóðãèÿ ýôôåêòèâíåå äðóãèõ ìåòîäîâ.
5Àáñîëþòíûå ïîêàçàíèÿ ê ïðîâåäåíèþ ëàçåðíîé õèðóðãèè. Ïðèìåíåíèå äðóãèõ ìåòîäîâ
ëå÷åíèÿ íå ðåêîìåíäîâàíî
Ïîêàçàíèÿ ê õèðóðãèè ñ èñïîëüçîâàíèåì äèîäíîãî ëàçåðà ÀÒÊÓÑ-15
Òàáëèöà 2: Äåðìàòîëîãèÿ
Çàáîëåâàíèå/ ñòðóêòóðà Ãðóïïà
ïîêàçàíèé Áåñêîíòàêòíàÿ
êîàãóëÿöèÿ Êîíòàêòíîå
èññå÷åíèå Èíòåðñòèöèàëüíàÿ
ãèïåðòåðìèÿ
Ïîêàçàíèÿ ê èñïîëüçîâàíèþ
Îñòðîêîíå÷íàÿ êîíäèëîìà 4 10-15 Âò / 0,5
ñåê 8-14 Âò ---
Êîíòàãèîçíûé ìîëëþñê 4 10-15 Âò / 0,5
ñåê 8-14 Âò ---
Âóëüãàðíàÿ áîðàäàâêà 4 10-15 Âò / 0,5
ñåê 8-14 Âò ---
Äîáðîêà÷åñòâåííûå îïóõîëè
êîæè
Ìàëåíüêèå 4 10-15 Âò / 0,5
ñåê 8-14 Âò ---
Áîëüøèå 3 10-15 Âò / 0,5
ñåê 8-14 Âò 4-5 Âò
Íåîïåðàáåëüíûå êîæíûå è
ïîäêîæíûå ìåòàñòàçû
ðàçëè÷íûõ îïóõîëåé
(ïàëëèàòèâíîå ëå÷åíèå) 410-15 Âò / 0,5
ñåê 8-14 Âò 4-5 Âò
Íåîïåðàáåëüíûå
óñëîâíî-çëîêà÷åñòâåííûå è
çëîêà÷åñòâåííûå îïóõîëè
êîæè (áàçàëèîìû, áîëåçíü
Áîóýíà, ñàðêîìà Êàïîøè)
Ïîêàçàíèÿ ê èñïîëüçîâàíèþ
Ìàëåíüêèå 4 10-15 Âò / 0,5
ñåê 8-14 Âò ---
Áîëüøèå 4 10-15 Âò / 0,5
ñåê 8-14 Âò 4-5 Âò
Êåëëîèäû –
ãèïåðòðîôè÷åñêèå ðóáöû 24-6 Âò / 0,5
ñåê --- 4-5 Âò
Ëåéêîïëàêèÿ 4 4-6 Âò / 0,5
ñåê --- ---
Ñàíàöèÿ ðàí 3 10-15 Âò / 0,5
ñåê 8-14 Âò ---
Òàáëèöà 3: Ñîñóäèñòàÿ ñèñòåìà (äåðìàòîëîãèÿ, õèðóðãèÿ, ãàñòðîýíòåðîëîãèÿ)
Çàáîëåâàíèå/ ñòðóêòóðà Ãðóïïà
ïîêàçàíèé Áåñêîíòàêòíàÿ
êîàãóëÿöèÿ Êîíòàêòíîå
èññå÷åíèå Èíòåðñòèöèàëüíàÿ
ãèïåðòåðìèÿ
Ñîñóäèñòûå äèñïëàçèè,
âèííûå
ïÿòíà, 4
êàâåðíîçíûå
ãåìàíãèîìû 44-6 Âò /
0,5 ñåê --- ---
Ïîêàçàíèÿ ê èñïîëüçîâàíèþ
âåíîçíûå
è
àðòåðèî-âåíîçíûå
äèñïëàçèè 48-12 Âò /
0,5 ñåê --- 4-5 Âò
îáëó÷åíèå
÷åðåç
êóáèê
ëüäà 412-15 Âò /
0,5 ñåê --- ---
ëèìôàíãèîìû,
ñìåøàííûå 58-12 Âò /
0,5 ñåê --- 4-5 Âò
îáëó÷åíèå
÷åðåç
êóáèê
ëüäà 512-15 Âò /
0,5 ñåê --- ---
Ãåìàíãèîìû
Êàïèëëÿðíûå 5 8-12 Âò /
0,5 ñåê --- ---
Êàâåðíîçíûå 5 8-12 Âò /
0,5 ñåê --- 4-5 Âò
Îáëó÷åíèå
÷åðåç
êóáèê
ëüäà 512-15 Âò /
0,5 ñåê --- ---
Òåëåàíãèîýêòàçèè íà ëèöå 4 4-6 Âò /
0,5 ñåê --- ---
Ñîñóäèñòûå çâåçäî÷êè 4 4-6 Âò /
0,5 ñåê --- ---
Àíãèîìû ãóá
Ìàëåíüêèå 4 8-12 Âò /
0,5 ñåê --- ---
Áîëüøèå 4 8-12 Âò /
0,5 ñåê --- ---
Ïîêàçàíèÿ ê èñïîëüçîâàíèþ
Ñåíèëüíûå ãåìàíãèîìû 4 8-12 Âò /
0,5 ñåê --- ---
Âàðèêîçíûå ïåðôîðàíòû 4 --- --- 6-8 Âò
Òåëåàíãèîýêòàçèè íà íîãàõ 3 5-7 Âò /
0,5 ñåê --- ---
Òàáëèöà 4: Ðîòîâàÿ ïîëîñòü, ãîðòàíü
Çàáîëåâàíèå/ ñòðóêòóðà Ãðóïïà
ïîêàçàíèé Áåñêîíòàêòíàÿ
êîàãóëÿöèÿ Êîíòàêòíîå
èññå÷åíèå Èíòåðñòèöèàëüíàÿ
ãèïåðòåðìèÿ
Ðàçðàñòàíèÿ àäåíîèäîâ 3 --- 8-14 Âò ---
Ãèïåðïëàçèÿ äåñåí 3 --- 8-14 Âò ---
×àñòè÷íàÿ ðåçåêöèÿ ìÿãêîãî
í¸áà 4 --- 8-14 Âò 4-5 Âò
Ìèíäàëèíû
Òîíçèëîòîìèÿ 4 --- 8-14 Âò ---
Òîíçèëýêòîìèÿ 2 --- 8-14 Âò ---
Ïîêàçàíèÿ ê èñïîëüçîâàíèþ
Îïóõîëè ÿçûêà
Äîáðîêà÷åñòâåííûå 5 --- 8-14 Âò 4-5 Âò
Çëîêà÷åñòâåííûå
(ðåçåêöèÿ) 410-15 Âò /
0,5 ñåê 8-14 Âò ---
Ñâèùè ðîòîâîé ïîëîñòè
5
(êîàãóëÿöèÿ
óñòüÿ ñâèùà
ïîñëå
êîàãóëÿöèè
êàíàëà)
4-6 Âò /
0,5 ñåê --- 4-6 Âò
Ðåçåêöèÿ ÿçû÷êà (ëå÷åíèå
õðàïà) 3 --- 6-14 Âò ---
Àôòû 2 2-4 Âò /
0,5 ñåê --- ---
Ëåéêîïëàêèÿ 4 4-6 Âò /
0,5 ñåê --- ---
Òàáëèöà 5: Âåðõíèå äûõàòåëüíûå ïóòè
Çàáîëåâàíèå/ ñòðóêòóðà Ãðóïïà
ïîêàçàíèé Áåñêîíòàêòíàÿ
êîàãóëÿöèÿ Êîíòàêòíîå
èññå÷åíèå Èíòåðñòèöèàëüíàÿ
ãèïåðòåðìèÿ
Ïîêàçàíèÿ ê èñïîëüçîâàíèþ
Íîñîâûå êðîâîòå÷åíèÿ ïðè
çàáîëåâàíèè Îñëåðà 4 6-8 Âò --- ---
Ïàïèëëîìàòîç ãëîòêè 4 8-12 Âò /
0,5 ñåê 8-14 Âò ---
Ñòåíîç ãëîòêè
Âðîæäåííûé 4 --- 8-14 Âò ---
Ðóáöîâûé 3 --- 8-14 Âò ---
Çëîêà÷åñòâåííûå
íîâîîáðàçîâàíèÿ ãëîòêè
(ïàëëèàòèâíàÿ àáëàöèÿ
îïóõîëè) 410-15 Âò /
0,5 ñåê 8-14 Âò ---
Ïîëèïîç íîñîâûõ õîäîâ 5 --- 6-8 Âò 4-5 Âò
Íîñîâûå ðàêîâèíû 4 --- 6-8 Âò 4-5 Âò
Òàáëèöà 6: Òðàõåîáðîíõèàëüíîå äåðåâî (Ýíäîñêîïè÷åñêàÿ õèðóðãèÿ)
Çàáîëåâàíèå/ ñòðóêòóðà Ãðóïïà
ïîêàçàíèé Áåñêîíòàêòíàÿ
êîàãóëÿöèÿ Êîíòàêòíîå
èññå÷åíèå Èíòåðñòèöèàëüíàÿ
ãèïåðòåðìèÿ
Òðàõåàëüíûå è áðîíõèàëüíûå
ñâèùè 5 --- --- 4-6 Âò
Ïîêàçàíèÿ ê èñïîëüçîâàíèþ
Ñòåíîç òðàõåè è áðîíõîâ
(äîáðîêà÷åñòâåííûé)
Âðîæäåííûé 5 --- 8-14 Âò ---
Ðóáöîâûé 5 --- 8-14 Âò ---
Âðîæäåííàÿ
ñîñóäèñòàÿ
ïàòîëîãèÿ 58-12 Âò /
0,5 ñåê 8-14 Âò 4-5 Âò
Ãðàíóë¸ìû 4 --- 8-14 Âò ---
Ïàïèëëîìû 4 10-15 Âò /
0,5 ñåê 8-14 Âò ---
Ïîëèïû 4 10-15 Âò /
0,5 ñåê 8-14 Âò ---
Ñòåíîç òðàõåè è áðîíõîâ
(çëîêà÷åñòâåííûé) 510-15 Âò /
0,5 ñåê 8-14 Âò ---
Òàáëèöà 7: Ãðóäíàÿ ñòåíêà, ïëåâðàëüíàÿ ïîëîñòü (òîðàêàëüíàÿ õèðóðãèÿ è òîðàêîñêîïèÿ)
Çàáîëåâàíèå/ ñòðóêòóðà Ãðóïïà
ïîêàçàíèé Áåñêîíòàêòíàÿ
êîàãóëÿöèÿ Êîíòàêòíîå
èññå÷åíèå Èíòåðñòèöèàëüíàÿ
ãèïåðòåðìèÿ
Áèîïñèèè
(òîðàêîñêîïè÷åñêèå
áèîïñèè ëåãêîãî) 5 --- 8-14 Âò ---
Ïîêàçàíèÿ ê èñïîëüçîâàíèþ
Äåêîðòèêàöèÿ
(òîðàêîñêîïè÷åñêàÿ) 5 --- 8-14 Âò ---
Ïëåâðîäåç
(òîðàêîñêîïè÷åñêèé) 410-15 Âò /
0,5 ñåê --- ---
Ðåçåêöèÿ ëåãî÷íûõ
ìåòàñòàçîâ (àòèïè÷íàÿ,
èíòðàîïåðàöèîííàÿ) 410-15 Âò /
0,5 ñåê 8-14 Âò ---
Ðåöèäèâèðóþùèé
ïíåâìîòîðàêñ (áóëëû,
òîðàêîñêîïè÷åñêè) 410-15 Âò /
0,5 ñåê --- ---
Ñèìïàòýêòîìèÿ
(òîðàêîñêîïè÷åñêè) 5 --- 8-14 Âò ---
Îïóõîëè ãðóäíîé ñòåíêè 4 10-15 Âò /
0,5 ñåê 8-14 Âò ---
Êëèíîâèäíàÿ ðåçåêöèÿ 4 --- 8-14 Âò ---
Òàáëèöà 8: Æåëóäî÷íî-êèøå÷íûé òðàêò (õèðóðãèÿ, ãàñòðîýíòåðîëîãèÿ)
Çàáîëåâàíèå/ ñòðóêòóðà Ãðóïïà
ïîêàçàíèé Áåñêîíòàêòíàÿ
êîàãóëÿöèÿ Êîíòàêòíîå
èññå÷åíèå Èíòåðñòèöèàëüíàÿ
ãèïåðòåðìèÿ
Ïèùåâîäíî-òðàõåàëüíûå ñâèùè 5 --- --- 4-6 Âò
Êîëîðåêòàëüíûé ðàê,
ïàëëèàòèâíàÿ öèòîðåäóêòèâíàÿ
îïåðàöèÿ 410-15 Âò /
0,5 ñåê 8-14 Âò ---
Ïîêàçàíèÿ ê èñïîëüçîâàíèþ
Àíãèîäèñïëàçèÿ 5 8-12 Âò /
0,5 ñåê --- ---
Ïîëèïîç
Ïîëèïîç
òîëñòîãî
êèøå÷íèêà 4 --- 8-14 Âò ---
Âîðñèí÷àòûå
àäåíîìàòîçíûå
ïîëèïû 3 --- 8-14 Âò ---
Ñòåíîçû ïèùåâîäà
Çëîêà÷åñòâåííûé 5 10-15 Âò /
0,5 ñåê 8-14 Âò | ---
Ðóáöîâûé 3 --- 8-14 Âò ---
Âðîæäåííûé 5 --- 8-14 Âò ---
Òàáëèöà 9: Áðþøíàÿ ïîëîñòü (ëàïàðîñêîïèÿ)
Çàáîëåâàíèå/ ñòðóêòóðà Ãðóïïà
ïîêàçàíèé Áåñêîíòàêòíàÿ
êîàãóëÿöèÿ Êîíòàêòíîå
èññå÷åíèå Èíòåðñòèöèàëüíàÿ
ãèïåðòåðìèÿ
Àïïåíäýêòîìèÿ 3 8-12 Âò /
0,5 ñåê 8-14 Âò ---
Ðàññå÷åíèå ñïàåê
Âðîæäåííûõ 4 --- 8-14 Âò ---
Ïîêàçàíèÿ ê èñïîëüçîâàíèþ
Ïîñòâîñïàëèòåëüíûõ 4 --- 8-14 Âò ---
Õîëåöèñòýêòîìèÿ 4 8-12 Âò /
0,5 ñåê 8-14 Âò ---
Ãðûæåñå÷åíèå 3 10-15 Âò /
0,5 ñåê --- ---
Áèîïñèÿ ëèìôàòè÷åñêîãî óçëà 2 8-12 Âò /
0,5 ñåê 8-14 Âò ---
Îïåðàöèÿ ïî ïîâîäó íåîïóùåíèÿ
ÿè÷êà (orchidolysis) 28-12 Âò /
0,5 ñåê 8-14 Âò ---
Âàãîòîìèÿ 3 --- 8-14 Âò ---
Òàáëèöà 10: Áðþøíàÿ ïîëîñòü (àáäîìèíàëüíàÿ õèðóðãèÿ)
Çàáîëåâàíèå/ ñòðóêòóðà Ãðóïïà
ïîêàçàíèé Áåñêîíòàêòíàÿ
êîàãóëÿöèÿ Êîíòàêòíîå
èññå÷åíèå Èíòåðñòèöèàëüíàÿ
ãèïåðòåðìèÿ
Ðàññå÷åíèå ñïàåê
Âðîæäåííûõ 4 --- 8-14 Âò ---
Ïîñòâîñïàëèòåëüíûõ 4 --- 8-14 Âò ---
Ðåçåêöèÿ ëèìôîóçëîâ 2 8-12 Âò /
0,5 ñåê 8-14 Âò ---
Ïîêàçàíèÿ ê èñïîëüçîâàíèþ
Ðåçåêöèÿ ïàðåíõèìàòîçíûõ
îðãàíîâ (ïå÷åíü, ñåëåçåíêà,
ïî÷êè, ïîäæåëóäî÷íàÿ æåëåçà) 3 --- 8-14 Âò ---
Ðåçåêöèÿ îïóõîëè 4 10-15 Âò /
0,5 ñåê 8-14 Âò ---
Âàãîòîìèÿ 3 --- 8-14 Âò ---
Òàáëèöà 11: Ïðîêòîëîãèÿ
Çàáîëåâàíèå/ ñòðóêòóðà Ãðóïïà
ïîêàçàíèé Áåñêîíòàêòíàÿ
êîàãóëÿöèÿ Êîíòàêòíîå
èññå÷åíèå Èíòåðñòèöèàëüíàÿ
ãèïåðòåðìèÿ
Àáëÿöèÿ àíàëüíîãî ñòåíîçà 4 10-15 Âò /
0,5 ñåê 8-14 Âò ---
Êîàãóëÿöèÿ ïðè àíàëüíîì
ýêòðîïèîíå 5 --- --- ---
Óäàëåíèå ãåìîððîèäàëüíûõ
óçëîâ 4 --- 8-14 Âò ---
Òðåùèíû çàäíåãî ïðîõîäà
Èññå÷åíèå 4 --- 8-14 Âò ---
Êîàãóëÿöèÿ 4 10-15 Âò /
0,5 ñåê --- ---
Ïîêàçàíèÿ ê èñïîëüçîâàíèþ
Îñòðîêîíå÷íûå êîíäèëîìû 4 10-15 Âò /
0,5 ñåê 8-14 Âò ---
Ñâèùè Âíóòðèïðîñâåòíî
Âðîæäåííûå 4 --- --- 4-6 Âò
Ïðèîáðåòåííûå 4 --- --- 4-6 Âò
Ïîñòâîñïàëèòåëüíûå 4 --- --- 4-6 Âò
Îïóõîëåâûå 4 --- --- 4-6 Âò
Ãåìîððîèäýêòîìèÿ 4 --- 8-14 Âò ---
Ïîëèïû
Ïîëèïîç
òîëñòîãî
êèøå÷íèêà 4 --- 8-14 Âò ---
Âîðñèí÷àòûå
àäåíîìàòîçíûå
ïîëèïû 3 --- 8-14 Âò ---
Òàáëèöà 12: Óðîãåíèòàëüíûé òðàêò (ãèíåêîëîãèÿ)
Çàáîëåâàíèå/ ñòðóêòóðà Ãðóïïà
ïîêàçàíèé Áåñêîíòàêòíàÿ
êîàãóëÿöèÿ Êîíòàêòíîå
èññå÷åíèå Èíòåðñòèöèàëüíàÿ
ãèïåðòåðìèÿ
Îñòðîêîíå÷íûå êîíäèëîìû 4 10-15 Âò /
0,5 ñåê 8-14 Âò ---
Ïîêàçàíèÿ ê èñïîëüçîâàíèþ
Ýêòîïè÷åñêàÿ áåðåìåííîñòü
Èñòìè÷åñêàÿ
òðóáíàÿ
áåðåìåííîñòü 3 --- 8-14 Âò ---
Àìïóëëÿðíàÿ
òðóáíàÿ
áåðåìåííîñòü 4 --- 8-14 Âò ---
Ýíäîìåòðèîç 4 10-15 Âò /
0,5 ñåê 8-14 Âò ---
Ãèñòåðîñêîïè÷åñêè
Äîáðîêà÷åñòâåííûå
ïîëèïû
ýíäîìåòðèÿ 4 --- 8-14 Âò ---
Ìåòðîìåíîððàãèÿ 4 10-15 Âò /
0,5 ñåê 8-14 Âò ---
Ïîäñëèçèñòûå
ôèáðîìû 4 --- 8-14 Âò ---
Ïåðåãîðîäêè
ìàòêè 4 --- 8-14 Âò ---
Ðåçåêöèÿ ëèìôîóçëà
(ëàïàðîñêîïè÷åñêè) --- 8-12 Âò /
0,5 ñåê 8-14 Âò ---
Ïåðèòóáàðíûå ñïàéêè 4 --- 8-14 Âò ---
Ïîêàçàíèÿ ê èñïîëüçîâàíèþ
Ïîëèêèñòîç ÿè÷íèêîâ 4 8-12 Âò /
0,5 ñåê 8-14 Âò ---
Òàáëèöà 13: Óðîãåíèòàëüíûé òðàêò (óðîëîãèÿ)
Çàáîëåâàíèå/ ñòðóêòóðà Ãðóïïà
ïîêàçàíèé Áåñêîíòàêòíàÿ
êîàãóëÿöèÿ Êîíòàêòíîå
èññå÷åíèå Èíòåðñòèöèàëüíàÿ
ãèïåðòåðìèÿ
Îñòðîêîíå÷íûå êîíäèëîìû 4 10-15 Âò /
0,5 ñåê 8-14 Âò ---
Êàðöèíîìû ïîëîâîãî ÷ëåíà 4 10-15 Âò /
0,5 ñåê 8-14 Âò ---
Ïðîñòàòà
Òðàíñóðåòðàëüíàÿ
ðåçåêöèÿ 310-15 Âò /
0,5 ñåê --- ---
Èíòåðñòèöèàëüíàÿ
ðåçåêöèÿ 4 --- --- 4-5 Âò
Ðåçåêöèÿ
êàðöèíîìû
(÷ðåçóðåòðàëüíûé
äîñòóï) 2 --- --- 4-5 Âò
Îïóõîëè ìî÷åâîãî ïóçûðÿ
Ïîâåðõíîñòíûé
ðàê 510-15 Âò /
0,5 ñåê 8-14 Âò ---
Èíâàçèâíàÿ
êàðöèíîìà 310-15 Âò /
0,5 ñåê 8-14 Âò ---
Ñòåíîç óðåòðû èëè ìî÷åòî÷íèêà
Ïîêàçàíèÿ ê èñïîëüçîâàíèþ
Âðîæäåííûé 5 --- 8-14 Âò ---
Ïðèîáðåòåííûé
Äîáðîêà÷åñòâåííûé 5 --- 8-14 Âò ---
Çëîêà÷åñòâåííûé 3 --- 8-14 Âò ---
Òàáëèöà 14: Íåéðîõèðóðãèÿ
Çàáîëåâàíèå/ ñòðóêòóðà Ãðóïïà
ïîêàçàíèé Áåñêîíòàêòíàÿ
êîàãóëÿöèÿ Êîíòàêòíîå
èññå÷åíèå Èíòåðñòèöèàëüíàÿ
ãèïåðòåðìèÿ
Ãåìîñòàç âî âðåìÿ èëè äî
óäàëåíèÿ îïóõîëåé:
ÀÂ-äèñïëàçèè
àñòðîöèòîìû
ãëèîáëàñòîìû
ãëèîìû
ìåíèíãèîìû
îëèãîäåíäðîãëèîìû
îïóõîëè ãèïîôèçà
4 8-12 Âò --- ---
Ïîäãîòîâêà è óäàëåíèå
îïóõîëåé (îòêðûòûé
õèðóðãè÷åñêèé äîñòóï) 4 --- 8-14 Âò ---
Èíòåðñòèöèàëüíàÿ
òåðìîòåðàïèÿ îïóõîëåé
(ñòåðåîòàêòè÷åñêîå èëè
ýíäîñêîïè÷åñêîå íàâåäåíèå) 5 --- --- 4-5 Âò
Ïîêàçàíèÿ ê èñïîëüçîâàíèþ
Ïåðñïåêòèâû ïðèìåíåíèÿ ïîëóïðîâîäíèêîâûõ
âûñîêîýíåðãåòè÷åñêèõ ëàçåðîâ â ëå÷åíèè õðîíè÷åñêèõ
ðèíèòîâ.
Ïëóæíèêîâ Ì.Ñ., Ðÿáîâà Ì.À., Êàðïèùåíêî Ñ.À.
Êàôåäðà îòîðèíîëàðèíãîëîãèè ñ êëèíèêîé ÑÏáÃÌÓ èì. àêàä.
È.Ï. Ïàâëîâà.
 ïîñëåäíèå ãîäû õèðóðãè÷åñêèå âìåøàòåëüñòâà â ïîëîñòè íîñà èìåþò ÷åòêóþ òåíäåíöèþ â ñòîðîíó
ùàäÿùåãî îòíîøåíèÿ ê ñëèçèñòîé îáîëî÷êå íîñîâûõ ðàêîâèí. Îïèñàíî ìíîãî âàðèàíòîâ õèðóðãè÷åñêèõ è
ïîëóõèðóðãè÷åñêèõ ìåòîäîâ ëå÷åíèÿ, ñðåäè êîòîðûõ ïðî÷íîå ìåñòî çàíèìàåò ëàçåðíàÿ õèðóðãèÿ
íîñîâûõ ðàêîâèí, ïðèâëåêàÿ âîçìîæíîñòüþ îïåðèðîâàòü ýôôåêòèâíî, áåñêðîâíî, íå ïðèáåãàÿ ê òàìïîíàäå
íîñà. Ðàçíîîáðàçèå äëèí âîëí, èçëó÷àåìûõ ðàçëè÷íûìè òèïàìè ëàçåðîâ, îïðåäåëÿþò è ðàçíîîáðàçèå
áèîëîãè÷åñêèõ ýôôåêòîâ, ÷òî íåîáõîäèìî ó÷èòûâàòü ïðè âûáîðå õèðóðãè÷åñêîãî èíñòðóìåíòà. ÑÎ2
ëàçåð îòíîñèòåëüíî íåäîðîãîé, åãî èçëó÷åíèå ïîãëîùàåòñÿ âîäîé è íå ïðîíèêàåò ãëóáîêî â òêàíè. Ñ
äðóãîé ñòîðîíû, íåâîçìîæíîñòü ïåðåäàâàòü ýíåðãèþ ÑÎ2 ëàçåðà ÷åðåç ñâåòîâîä è ïëîõîé
êîàãóëèðóþùèé ýôôåêò äåëàþò ÑÎ2 ëàçåð íåóäîáíûì äëÿ èíòðàíàçàëüíîé õèðóðãèè. Òîëüêî õîðîøî
âèäèìûå, äîñòóïíûå çàáîëåâàíèÿ ïðåääâåðèÿ íîñà, ïîëîñòè íîñà è ñîîòâåòñòâóþùèå ó÷àñòêè
ïåðåãîðîäêè íîñà ìîãóò áûòü ïðîîïåðèðîâàíû ÑÎ2 ëàçåðîì (R.W.Ruckley 1998). Ñðåäè îñëîæíåíèé ÑÎ2
ëàçåðíîé ýíäîíàçàëüíîé õèðóðãèè S.G.Selkin (1986) â 11 ñëó÷àÿõ èç 102 îïèñûâàåò êðîâîòå÷åíèÿ,
â 2 ñëó÷àÿõ – îæîãè êîæè ïðåääâåðèÿ íîñà. Êðîìå òîãî, ÑÎ2 ëàçåð íåëüçÿ èñïîëüçîâàòü äëÿ
äåñòðóêöèè êîñòè: èç-çà íèçêîãî ñîäåðæàíèÿ âîäû â êîñòíîé òêàíè äëÿ åå ðàçðóøåíèÿ òðåáóåòñÿ
ìíîãî ýíåðãèè, ÷òî âåäåò ê ïåðåãðåâó êîñòè, åå ñåêâåñòðàöèè. Ìíîãèå äðóãèå òèïû ëàçåðíîãî
èçëó÷åíèÿ ìîãóò ïåðåäàâàòüñÿ ïî ñâåòîâîäó è ìîãóò áûòü óñïåøíî ïðèìåíåíû â ýíäîíàçàëüíîé õèðóðãèè
ïðè ââåäåíèè ñâåòîâîäà â æåñòêèé íàêîíå÷íèê ìàëîãî äèàìåòðà, ÷òî ïîçâîëÿåò èñïîëüçîâàòü ýòîò òèï
ëàçåðà ïðè êîíõîòîìèè, FESS, äëÿ îñòàíîâêè íîñîâûõ êðîâîòå÷åíèé è ò.ä. Ãåìîñòàòè÷åñêèé ýôôåêò
áîëåå âûðàæåí ó Nd:YAG-ëàçåðà, ÊÒÐ-ëàçåð íå äàåò ãëóáîêîãî ïðîíèêíîâåíèÿ ýíåðãèè â òêàíè è
áîëåå âûãîäåí äëÿ ïðåöèçèîííîé ðåçêè. Ñîçäàíû ëàçåðíûå ñèñòåìû, êîòîðûå ïîçâîëÿþò ìåíÿòü äëèíó
âîëíû â ïðîöåññå ðàáîòû, ïåðåêëþ÷àòü ñ ÊÒÐ íà Nd:YAG èçëó÷åíèå â çàâèñèìîñòè îò æåëàåìîãî
ýôôåêòà: ïðåöèçèîííîãî ðàçðåçà èëè ãåìîñòàçà. Ãîëüìèåâûé ëàçåð ìîæåò áûòü èñïîëüçîâàí äëÿ
àáëÿöèè òêàíåé ñ äîâîëüíî õîðîøèì ãåìîñòàòè÷åñêèì ýôôåêòîì, íî ïðè åãî âîçäåéñòâèè ïðîèñõîäèò
“ðàçáðûçãèâàíèå” è êðîâü ïîêðûâàåò ýíäîñêîï, íàðóøàÿ âèçóàëèçàöèþ. Êðîìå òîãî, ïî ìíåíèþ N.Jones
(1999) íåäîñòàòêîì ãîëüìèåâîãî ëàçåðà ÿâëÿåòñÿ òî, ÷òî ëó÷ îñîáåííî ëåãêî ðàñôîêóñèðóåòñÿ, ëó÷
ðàñõîäÿùèéñÿ è ïëîòíîñòü ìîùíîñòè áûñòðî ïàäàåò ïðè èçìåíåíèè ïîëîæåíèÿ ñâåòîâîäà. Nd:YAG-ëàçåð
ìîæåò áûòü èñïîëüçîâàí êîíòàêòíî, ÷òî íàìíîãî ýðãîíîìè÷íåé è áåçîïàñíåé, ÷åì äèñòàíòíàÿ ìåòîäèêà,
ëàçåð äàåò õîðîøèé êîàãóëèðóþùèé, àáëèðóþùèé è ãåìîñòàòè÷åñêèé ýôôåêòû. Ýðáèåâûé ëàçåð
ïîçâîëÿåò õîðîøî àáëèðîâàòü ìÿãêèå òêàíè, íî äàåò ïëîõîé ãåìîñòàç, ÷òî îãðàíè÷èâàåò åãî ïðèìåíåíèå â
ðèíîëîãèè.
Ðàçëè÷íûå ëàçåðíûå ñèñòåìû áûëè èñïîëüçîâàíû äëÿ âìåøàòåëüñòâ íà íîñîâûõ ðàêîâèíàõ: ÑÎ2,
àðãîíîâûé, Ho:YAG, ÊÒÐ, ïîëóïðîâîäíèêîâûé, Nd:YAG-ëàçåðû. Áîëüøîé îïûò íàêîïëåí â ïðèìåíåíèè ÑÎ2
ëàçåðà äëÿ ýòîé öåëè. ÑÎ2 ëàçåðíàÿ êîàãóëÿöèÿ ñëèçèñòîé íîñîâûõ ðàêîâèí îñóùåñòâëÿåòñÿ
äèñòàíòíî (Ï.Â. Âèííè÷óê 1985, Ã.Ý.Òèìåí 1987, N.Sudo et al 1983, N.Fukutake et al 1986,
Wolfson et al 1996).
Ïðèìåíåíèå ïîëóïðîâîäíèêîâûõ âûñîêîýíåðãèòè÷åñêèõ ëàçåðîâ â ëå÷åíèè õðîíè÷åñêèõ ðèíèòîâ.
S.Elwany, M.N.Abdel – Moneim (1997) äëÿ îáúÿñíåíèÿ õîðîøåãî êëèíè÷åñêîãî ýôôåêòà ÑÎ2 ëàçåðíîé
õèðóðãèè õðîíè÷åñêèõ ðèíèòîâ ó 10 áîëüíûõ ñ íåàëëåðãè÷åñêèì ðèíèòîì ïîñëå ëàçåðíîãî
âîçäåéñòâèÿ ïðîèçâîäèëè áèîïñèþ â ìîìåíò îïåðàöèè è ÷åðåç ìåñÿö. Ñ ïîìîùüþ òðàíñìèññèîííîé
ýëåêòðîííîé ìèêðîñêîïèè âûÿâëåíî, ÷òî ïåðâîíà÷àëüíàÿ äåýïèòåëèçàöèÿ ñîïðîâîæäàëàñü ðåãåíåðàöèåé
çäîðîâîãî ýïèòåëèÿ, óìåíüøåíèåì êîëè÷åñòâà è àêòèâíîñòè ñëèçèñòî – ìóöèíîâûõ æåëåç, ôèáðîçîì
ñîåäèíèòåëüíîòêàííîé ñòðîìû, óìåíüøåíèåì çàñòîÿ êðîâè â êàâåðíîçíûõ ñïëåòåíèÿõ. Âûÿâëåííûå
óëüòðàñòðóêòóðíûå èçìåíåíèÿ îáúÿñíÿþò õîðîøèé êëèíè÷åñêèé ýôôåêò ïðîöåäóðû.
Íåîáõîäèìîñòü îïåðèðîâàòü äèñòàíòíî ÑÎ2 ëàçåðîì îïðåäåëèëà è îñîáåííîñòè õèðóðãè÷åñêîé òåõíèêè: â
îñíîâíîì ýòî àáëÿöèÿ èëè âàïîðèçàöèÿ ïåðåäíèõ îòäåëîâ ðàêîâèíû. R.W.Ruckley (1998) ïðåäëàãàåò
âàïîðèçèðîâàòü ÑÎ2 ëàçåðîì âñþ íèæíþþ ÷àñòü íîñîâîé ðàêîâèíû äî çàäíèõ åå îòäåëîâ. Ìåäèàëüíûé
êîíòóð ðàêîâèíû îñòàâëÿþò èíòàêòíûì äëÿ ïðåäîòâðàùåíèÿ îáðàçîâàíèÿ ñïàåê ìåæäó ðàíåâîé
ïîâåðõíîñòüþ è ïåðåãîðîäêîé íîñà. Ëàòåðàëüíóþ ïîâåðõíîñòü ñîõðàíÿþò ÷òîáû íå äîïóñòèòü
ïîâðåæäåíèÿ íîñîñëåçíîãî êàíàëà. Âåðõíåé ãðàíèöåé âàïîðèçàöèè ÿâëÿåòñÿ êîñòü. Òàêîé îáúåì
óäàëåíèÿ òêàíè íèæíåé íîñîâîé ðàêîâèíû, íà íàø âçãëÿä, èçáûòî÷åí è äîïóñòèì ëèøü ïðè âûðàæåííîé
ãèïåðïëàçèè ðàêîâèí. Íî, åñòåñòâåííî, äèñòàíòíûì ìåòîäîì ëàçåðíîãî âîçäåéñòâèÿ íåâîçìîæíî
âàïîðèçèðîâàòü çàäíèå îòäåëû ðàêîâèí, íå óäàëèâ ïåðåäíèå è ñðåäíèå îòäåëû ðàêîâèíû, à èìåííî
ãèïåðïëàçèÿ çàäíèõ êîíöîâ íîñîâûõ ðàêîâèí âñòðå÷àåòñÿ ÷àùå âñåãî. Äëÿ áîëåå óäîáíîãî
ìàíèïóëèðîâàíèÿ ÑÎ2 ëàçåðîì â ïîëîñòè íîñà Mittleman (1982) ïðåäëàãàåò èñïîëüçîâàòü äîïîëíèòåëüíîå
óñòðîéñòâî, ïîçâîëÿþùåå îïåðèðîâàòü ñ ôîêóñíîãî ðàññòîÿíèÿ 5 ñì, îäíàêî, çàäíèå êîíöû íîñîâûõ ðàêîâèí
ïðè èñïîëüçîâàíèè äàííîãî óñòðîéñòâà îñòàþòñÿ íåäîñòóïíûìè.
B.M. Lippert, J.A.Werner (1997.1998) ïðèìåíèëè èíóþ ìåòîäèêó: íåñêîëüêî ÑÎ2 ëàçåðíûõ
âîçäåéñòâèé (1 –2 Âò ïî 1 ñåê) íàíîñèëè íà óâåëè÷åííûé ïåðåäíèé êîíåö íèæíåé íîñîâîé ðàêîâèíû ïîä
îïåðàöèîííûì ìèêðîñêîïîì ñ ìèêðîìàíèïóëÿòîðîì (äèàìåòð ïÿòíà 0,25 ìì). Ðåýïèòåëèçàöèÿ ïðîèñõîäèò çà
ñ÷åò îñòðîâêîâ íåèçìåíåííîé ñëèçèñòîé ìåæäó ëàçèðîâàííûìè ïÿòíàìè. Ýòîò ìåòîä óìåíüøàåò ðèñê
ðàçâèòèÿ äèñòðîôè÷åñêèõ èçìåíåíèé ñëèçèñòîé, îáðàçîâàíèÿ êîðîê â ïîñëåîïåðàöèîííîì ïåðèîäå, îäíàêî,
ïîçâîëÿåò âîçäåéñòâîâàòü òîëüêî íà ïåðåäíèå êîíöû íîñîâûõ ðàêîâèí.
M. Englender (1995) ñ÷èòàåò âïîëíå äîñòàòî÷íûì ëàçåðíîå âîçäåéñòâèå òîëüêî íà ïåðåäíèå îòäåëû
íîñîâûõ ðàêîâèí. Óêàçûâàÿ íà òî, ÷òî îñíîâíóþ ÷àñòü íîñîâîãî ñîïðîòèâëåíèÿ âîçäóøíîìó ïîòîêó ñîçäàþò
ïåðåäíèå 2 –3 ñì íèæíåé íîñîâîé ðàêîâèíû. Àâòîð íàíîñèò ïîä ìèêðîñêîïîì ñêàíèðóþùèì óñòðîéñòâîì ÑÎ2
ëàçåðíîå àáëèðóþùåå âîçäåéñòâèå (15Âò â ïîñòîÿííîì ðåæèìå), íå äîïóñêàÿ êàðáîíèçàöèè òêàíåé. Â
ïîñëåîïåðàöèîííîì ïåðèîäå ôîðìèðóåòñÿ ðóáåö, ðàñïðîñòðàíÿþùèéñÿ íà âåñü îáúåì íîñîâîé ðàêîâèíû,
óìåíüøàÿ åå ðàçìåðû. ×åðåç ãîä ïîñëå îïåðàöèè óëó÷øåíèå íîñîâîãî äûõàíèÿ îòìå÷åíî â 93% ñëó÷àåâ,
íî íå ïðîâåäåí àíàëèç òðàíñïîðòíîé è çàùèòíîé ôóíêöèé ñëèçèñòîé îáîëî÷êè íîñà. Ðóáöåâàíèå íîñîâîé
ðàêîâèíû íà âñåì åå ïðîòÿæåíèè â ôóíêöèîíàëüíîì îòíîøåíèè íå îïðàâäàíî.
Y.P.Krespi et al (1994) èñïîëüçîâàë ÑÎ2 ëàçåð 7 Âò ñ ñóïåðêîðîòêèìè èìïóëüñàìè 100ìêñåê.,
ìàêñèìàëüíàÿ ìîùíîñòü èìïóëüñà 350 Âò. Äëÿ àáëÿöèè 30% îáúåìà ïåðåäíèõ îòäåëîâ íèæíåé íîñîâîé
ðàêîâèíû ñ õîðîøèìè ðåçóëüòàòàìè. Ïðè íåîáõîäèìîñòè àáëèðîâàòü çàäíèå îòäåëû íîñîâîé ðàêîâèíû
ïðåäëàãàåò èñïîëüçîâàòü Nd:YAG ëàçåð (8 Âò ýêñïîçèöèÿ 3 ñåê) äëÿ èíòåðñòèöèàëüíîé
ôîòîêîàãóëÿöèè íèæíèõ íîñîâûõ ðàêîâèí. Âîëîêíî ââîäèòñÿ ÷åðåç ïåðåäíèé êîíåö ðàêîâèíû â åå òîëùó.
 ðåçóëüòàòå âîçäåéñòâèÿ îáðàçóåòñÿ êàíàë 2,5 ìì â äèàìåòðå íà âñåì ïðîòÿæåíèè ðàêîâèíû.
Êðîâîòå÷åíèÿ íå áûâàåò, òàìïîíàäà íîñà íå òðåáóåòñÿ. B.M.Lippert, J.A.Werner (1980 òàêæå
èñïîëüçîâàëè äëÿ òóðáèíýêòîìèè Nd:YAG ëàçåð, íî â äèñòàíòíîì ðåæèìå ( 5 – 10 Âò) è, åñòåñòâåííî,
îòìåòèëè áîëåå äëèòåëüíûå ñðîêè çàæèâëåíèÿ, ÷åì ïîñëå ÑÎ2 ëàçåðíîãî âîçäåéñòâèÿ, õîòÿ îòäàëåííûå
ôóíêöèîíàëüíûå ðåçóëüòàòû ïîñëå Nd:YAG è ÑÎ2 ëàçåðíîãî âîçäåéñòâèÿ îäèíàêîâû.
S.G.Selkin, C.L.Roussos (1994) èñïîëüçîâàëè ÑÎ2 ëàçåð (20Âò ïîñòîÿííûé ðåæèì) äëÿ âàïîðèçàöèè
ïåðåäíå-íèæíåé ÷àñòè íèæíèõ íîñîâûõ ðàêîâèí êàê ýòàïà ðèíîñåïòîïëàñòèêè. Õîðîøèå ôóíêöèîíàëüíûå
ðåçóëüòàòû â ïðåäñòàâëåííûõ 250 ñëó÷àÿõ íåëüçÿ îáúÿñíèòü òîëüêî ëàçåðíîé êîíõîòîìèåé, òàê êàê
âñåì áîëüíûì îäíîìîìåíòíî ïðîâîäèëàñü ðèíîñåïòîïëàñòèêà.  2,4% ñëó÷àåâ â ïîñëåîïåðàöèîííîì ïåðèîäå
îòìå÷åíî ðàçâèòèå ñèíåõèé.
Ïðèìåíåíèå ïîëóïðîâîäíèêîâûõ âûñîêîýíåðãèòè÷åñêèõ ëàçåðîâ â ëå÷åíèè õðîíè÷åñêèõ ðèíèòîâ.
R.Mladina et al (1991) îñóùåñòâëÿëè 1 èëè íåñêîëüêî ÑÎ2 ëàçåðíûõ âîçäåéñòâèÿ (10 Âò 7-10 ñåê,
äèàìåòð ëó÷à 3 ìì) â îáëàñòè ìåäèàëüíî-âåðõíåãî êâàäðàíòà ïåðåäíåãî êîíöà íèæíåé íîñîâîé ðàêîâèíû.
Õîðîøèå ôóíêöèîíàëüíûå ðåçóëüòàòû ïîëó÷åíû â 69 ñëó÷àÿõ èç 78 è ïîäòâåðæäåíû ôóíêöèîíàëüíûìè
ïðîáàìè.
Èòàê, ÑÎ2 ëàçåð ïîçâîëÿåò ìàíèïóëèðîâàòü òîëüêî â îáëàñòè ïåðåäíåãî êîíöà íèæíåé íîñîâîé ðàêîâèíû,
ïîëíîñòüþ íå èñêëþ÷àåò ðèñê ðàçâèòèÿ êðîâîòå÷åíèÿ. Íåîáõîäèìîñòü îïåðèðîâàòü äèñòàíòíî òðåáóåò
ïðèìåíåíèÿ ãðîìîçäêèõ ìàíèïóëÿòîðîâ è ñðåäñòâ çàùèòû ïàöèåíòà è äàæå õèðóðãà, íàïðèìåð,
ïðåäëàãàåòñÿ îïåðèðîâàòü â ìîêðûõ õëîï÷àòîáóìàæíûõ ïåð÷àòêàõ.
H.L.Levine(1992) èñïîëüçóåò äëÿ êîíõîòîìèè ÊÒÐ ëàçåð, ñëåãêà ðàñôîêóñèðîâàííûì ëó÷îì ïðè 5-8 Âò
íàíîñèò ïåðåêðåùèâàþùèåñÿ ëèíèè ïî âñåé ïîâåðõíîñòè ðàêîâèíû. Íåáîëüøèå ó÷àñòêè ýïèòåëèÿ ìåæäó
íàíåñåííûìè ëèíèÿìè âàïîðèçàöèè ÿâëÿþòñÿ èñòî÷íèêîì ðåýïèòåëèçàöèè ïðè çàæèâëåíèè.
P.Rosles et al (1999), P.Janda et al (1999) ñ óñïåõîì èñïîëüçîâàëè äëÿ êîíõîòîìèè Ho:YAG ëàçåð ñ
äëèíîé âîëíû 2100íì. Ýíåðãèÿ ëàçåðà äîñòàâëÿåòñÿ ïî ñâåòîâîäó. Íàêîíå÷íèê ïîçâîëÿåò ïîëó÷èòü
èçãèá êîíöåâîé ÷àñòè îò 5 äî 50 ãðàäóñîâ.
Lenz H. è ñîàâò. â 1984 ãîäó ïðèìåíèëè ïðè ëå÷åíèè õðîíè÷åñêèõ ãèïåðòðîôè÷åñêèõ è âàçîìîòîðíûõ
ðèíèòîâ èçëó÷åíèå àðãîíîâîãî ëàçåðà ñ ìîùíîñòüþ íà âûõîäå ìàíèïóëÿòîðà 4 Âò. Äèñòàíòíî íàíîñèëè äî
10 òî÷å÷íûõ êîàãóëèðóþùèõ âîçäåéñòâèé íà ñëèçèñòóþ îáîëî÷êó íèæíèõ íîñîâûõ ðàêîâèí â òå÷åíèå
2 - 5 ìèí.
Îïèñàí è áîëåå ðàäèêàëüíûé ñïîñîá ëå÷åíèÿ âàçîìîòîðíîãî ðèíèòà, çàêëþ÷àþùèéñÿ â ëàçåðíîé ýêòîìèè
âèäèåâà íåðâà òðàíñìàêñèëëÿðíûì äîñòóïîì (Williams J.D. 1983).
 ËÎÐ - êëèíèêå ÑÏáÃÌÓ èì. àêàä. È.Ï.Ïàâëîâà ëàçåðíîå èçëó÷åíèå àïïàðàòà "Ðàäóãà - 1" ïðè
ëå÷åíèè õðîíè÷åñêèõ ðèíèòîâ èñïîëüçóåòñÿ ñ íà÷àëà 80-õ ãîäîâ. Ïðè õðîíè÷åñêèõ ðèíèòàõ
ïàðàìåòðû è òåõíèêà ëàçåðíîãî âîçäåéñòâèÿ ïðåäîïðåäåëÿëèñü ôîðìîé ïàòîëîãèè è ýôôåêòèâíîñòüþ
ïðåäøåñòâóþùåãî ëå÷åíèÿ. Ëå÷åíèå õðîíè÷åñêèõ ãèïåðòðîôè÷åñêèõ ðèíèòîâ ïðîâîäèòñÿ ïóòåì
ëàçåðíîãî èññå÷åíèÿ ãèïåðïëàçèðîâàííûõ òêàíåé, âêëþ÷àÿ ïîëèïû, êîíòàêòíûì ñïîñîáîì ïðè âûõîäíîé
ìîùíîñòè íà êîñîñêîëîòîì òîðöå ìîíîâîëîêíà äî 4-6 Âò. Ïðè äàííîé ôîðìå ðèíèòà ìîæåò áûòü èñïîëüçîâàí ìåòîä
ëàçåðíîé ïîäñëèçèñòîé êîàãóëÿöèè íîñîâûõ ðàêîâèí ñ ìîùíîñòüþ íà âûõîäå âîëîêíà 6-8 Âò. Ìåòîä õîðîøî
ñåáÿ çàðåêîìåíäîâàë, è ïîçâîëÿåò îïåðèðîâàòü áîëüíûõ â àìáóëàòîðíûõ óñëîâèÿõ, ïîñêîëüêó íå
ñîïðîâîæäàåòñÿ êðîâîòå÷åíèåì è âûðàæåííûì ïîñëåîïåðàöèîííûì âîñïàëåíèåì. Ïðè àíàëèçå ðåçóëüòàòîâ
ëàçåðíîé õèðóðãèè íåéðî-âåãåòàòèâíîé ôîðìû âàçîìîòîðíûõ ðèíèòîâ ó 126 áîëüíûõ ÷åðåç 2 ãîäà â 100
ñëó÷àÿõ ñîõðàíÿëñÿ õîðîøèé ýôôåêò ëå÷åíèÿ, ÷åðåç 2 ãîäà - ó 88 áîëüíûõ ñîõðàíÿëñÿ ñòîéêèé
ïîëîæèòåëüíûé ðåçóëüòàò (À.Ì.Ãàãàóç 1988).
Ê ñîæàëåíèþ, â ëèòåðàòóðå ìû íå íàøëè äàííûõ îá ýôôåêòèâíîñòè ïîëóïðîâîäíèêîâûõ ëàçåðîâ â
ëå÷åíèè õðîíè÷åñêèõ ðèíèòîâ. Ïîëóïðîâîäíèêîâûé ëàçåð, äëèíà âîëíû êîòîðîãî áëèçêà ê èíôðàêðàñíûì
âîëíàì, àáñîðáèðóåòñÿ êðîâüþ. Ãëóáèíà ïðîíèêíîâåíèÿ â ìÿãêèå òêàíè ñóùåñòâåííî áîëüøå, ÷åì ÑÎ2
ëàçåðà, ñ åãî ïîìîùüþ ìîæíî îñóùåñòâèòü ðàçðåç, âàïîðèçàöèþ, êîàãóëÿöèþ òêàíåé.
Ìû ïðèìåíèëè äëÿ âîçäåéñòâèÿ íà ñëèçèñòóþ íèæíèõ íîñîâûõ ðàêîâèí ïîëóïðîâîäíèêîâûé
âûñîêîýíåðãåòè÷åñêèé ëàçåð “Atcus-15”. Óñòàíîâêà ðàçðàáîòàíà è âûïîëíåíà ôèðìîé
“Ïîëóïðîâîäíèêîâûå ïðèáîðû” è ïðåäíàçíà÷åíà äëÿ ìàëîèíâàçèâíîé êîíòàêòíîé êîàãóëÿöèè òêàíåé. Àïïàðàò
ñîñòîèò èç äâóõ áëîêîâ – îïòè÷åñêîãî áëîêà è ýëåêòðîííîãî áëîêà óïðàâëåíèÿ, îïòè÷åñêîãî èíñòðóìåíòà
è ïåäàëè. Îïòè÷åñêèé áëîê ïðåäñòàâëÿåò ñîáîé îïòèêî-ìåõàíè÷åñêóþ ñáîðêó, ñîñòîÿùóþ èç 8-ìè 3-õ
âàòòíûõ ëàçåðíûõ äèîäîâ ñ ôîêóñèðóþùèìè îáúåêòèâàìè, îòðàæàþùåé ïèðàìèäû, îïòè÷åñêîãî ðàçúåìà,
8-ìè Ïåëüòüå-ýëåìåíòîâ ñ ðàñïîëîæåííûìè íà íèõ òåðìèñòîðàìè. Àïïàðàò ïîçâîëÿåò ðàáîòàòü êàê â
èìïóëüñíîì, òàê è â íåïðåðûâíîì ðåæèìå. Äèàïàçîí ðåãóëèðîâàíèÿ âûõîäíîé ìîùíîñòè ëàçåðíîãî èçëó÷åíèÿ
àïïàðàòà â íåïðåðûâíîì ðåæèìå îò 0,5 äî 15 Âò, äëèíà âîëíû èçëó÷åíèÿ – 0,81+0,03 ìêì,
äëèòåëüíîñòü èìïóëüñîâ ëàçåðíîãî èçëó÷åíèÿ îò 0,05 äî 10 ñåêóíä.
Ïðè âàçîìîòîðíûõ ðèíèòàõ öåëåñîîáðàçíî ïðèäåðæèâàòüñÿ ïîñëåäîâàòåëüíîé òàêòèêè "step by step".
Íà ïåðâîì ýòàïå íàíîñÿò 1-2- êðàòíîå òî÷å÷íîå âîçäåéñòâèå (êîíòàêòíî èëè äèñòàíòíî) íà
Ïðèìåíåíèå ïîëóïðîâîäíèêîâûõ âûñîêîýíåðãèòè÷åñêèõ ëàçåðîâ â ëå÷åíèè õðîíè÷åñêèõ ðèíèòîâ.
ðåôëåêñîãåííûå çîíû ñëèçèñòîé îáîëî÷êè ïîëîñòè íîñà ðàñôîêóñèðîâàííûì ëó÷îì äèîäíîãî ëàçåðà ñ
âûõîäíîé ìîùíîñòüþ íà òîðöå ñâåòîâîäà 4 Âò (ðåôëåêñîãåííûå çîíû îáðàçóþòñÿ èç ñóá- è
èíòðàýïèòåëèàëüíûõ ñïëåòåíèé òðîéíè÷íîãî, ñèìïàòè÷åñêîãî è ïàðàñèìïàòè÷åñêîãî íåðâîâ â îáëàñòè
ïåðåäíèõ, çàäíèõ è îò÷àñòè ñðåäíèõ îòäåëîâ íèæíèõ è ñðåäíèõ íîñîâûõ ðàêîâèí). Åñëè äàííàÿ ñõåìà
ëå÷åíèÿ íå ïðèâîäèò ê äîëæíîìó êëèíè÷åñêîìó ýôôåêòó, íåîáõîäèìî ðåàëèçîâàòü âòîðîé ìåòîäè÷åñêèé
ïðèåì, çàêëþ÷àþùèéñÿ â ïðîâåäåíèè êîàãóëèðóþùåãî êîíòàêòíîãî ëàçåðíîãî âîçäåéñòâèÿ âäîëü âñåé
íèæíåé èëè ñðåäíåé ðàêîâèíû ïðè ìîùíîñòè íà âûõîäå ìîíîâîëîêîííîãî ñâåòîâîäà ñ êîñîñðåçàííûì òîðöîì äî 6
Âò è ñêîðîñòè åãî ïåðåäâèæåíèÿ 1,0 - 1,5 ñì/ñ. Åñëè ÷åðåç ìåñÿö è ýòîò ïðèåì íå ïðèâîäèò ê
æåëàåìûì ðåçóëüòàòàì, íåîáõîäèìî îñóùåñòâëÿòü ïîäñëèçèñòóþ ëàçåðíóþ êîàãóëÿöèþ ïðè ïîìîùè
èçëó÷åíèÿ íà âûõîäå ìîíîâîëîêîííîãî ñâåòîâîäà äî 8 Âò. Äëÿ ýòîãî ñèììåòðè÷íî ñðåçàííûì òîðöîì
ìîíîâîëîêîííîãî ñâåòîâîäà ïðîèçâîäèòñÿ ïóíêöèÿ ñëèçèñòîé îáîëî÷êè ïåðåäíåãî êîíöà íèæíåé íîñîâîé
ðàêîâèíû, à çàòåì ìîíîâîëîêíî ïðîâîäèòñÿ âäîëü âñåé ðàêîâèíû ñî ñêîðîñòüþ 0,5 - 1,5 ñì/ñ, íå äîõîäÿ 0,5
ñì äî åå çàäíåãî êîíöà.
 ïîñëåîïåðàöèîííîì ïåðèîäå íàáëþäàåòñÿ íåêîòîðîå îáîñòðåíèå â òå÷åíèè ðèíèòà, ñâÿçàííîå ñ
ðåàêòèâíûì âîñïàëåíèåì ñëèçèñòîé îáîëî÷êè ïîëîñòè íîñà.  òå÷åíèå íåäåëè ïîêàçàíî ïðèìåíåíèå ñëîæíûõ
êàïåëü, âêëþ÷àþùèõ ðàñòèòåëüíîå ìàñëî, ñîñóäîñóæèâàþùèå êàïëè, àíòèáèîòèê.  ýòîò æå ïåðèîä
äëÿ óìåíüøåíèÿ ðåàêòèâíûõ ÿâëåíèé â ïîëîñòè íîñà öåëåñîîáðàçíî èñïîëüçîâàòü ëàçåðíóþ ãåëèé -
íåîíîâóþ ôèçèîòåðàïèþ â ïðîòèâîâîñïàëèòåëüíûõ äîçàõ. Ñ ïðèìåíåíèåì ïîëóïðîâîäíèêîâîãî ëàçåðà áûëî
ïðîîïåðèðîâàíî 46 áîëüíûõ õðîíè÷åñêèìè ðèíèòàìè. Íè â îäíîì ñëó÷àå íå íàáëþäàëîñü ôîðìèðîâàíèå êîðîê
â ïîëîñòè íîñà ïîñëå îïåðàöèè, íå áûëî êðîâîòå÷åíèé. Âñå îïåðàöèè ïðîâîäèëèñü àìáóëàòîðíî è íå
ïðèâîäèëè ê ïîòåðå òðóäîñïîñîáíîñòè.
Îòäàëåííûå ðåçóëüòàòû ëàçåðíîé êîíõîòîìèè
Òèï ëàçåðà àâòîð % õîðîøèõ
îòäàëåííûõ ðåçóëüòàòîâ
ÑÎ2N.Sudo 1983 81
ÑÎ2Ä.Ã.×èðåøêèí 1990 92
CO2R.Mladina 1991 88,4
CO2S.G.Selkin 1994 93
CO2M.Englender 1995 93
CO2B.M.Lippert 1998 79,6
KTP H.L.Levine 1992 92
Ho:YAG P. Janda 1999 86
Nd:YAG B.M.Lippert 1998 68,3
Nd:YAG M.Ñ.Ïëóæíèêîâ 1991 79,3
Nd:YAG À.Ì.Ãàãàóç 1988 80
“ÀÒÊÓÑ-15” Ì.Ñ.Ïëóæíèêîâ 2000 83,2
Ïðèìåíåíèå ïîëóïðîâîäíèêîâûõ âûñîêîýíåðãèòè÷åñêèõ ëàçåðîâ â ëå÷åíèè õðîíè÷åñêèõ ðèíèòîâ.
Ëàçåðíàÿ õèðóðãèÿ õðîíè÷åñêèõ ðèíèòîâ îáëàäàåò ðÿäîì î÷åâèäíûõ ïðåèìóùåñòâ: îïåðàöèÿ
ïðîâîäèòñÿ áåñêðîâíî, áåçáîëåçíåííî, íå òðåáóåò òàìïîíàäû ïîëîñòè íîñà è ïðåáûâàíèÿ áîëüíîãî â
ñòàöèîíàðå. Â ïîñëåîïåðàöèîííîì ïåðèîäå â ìåíüøåé ñòåïåíè îáðàçóþòñÿ êîðêè, ðàíüøå íàáëþäàåòñÿ
çàæèâëåíèå.
Ëàçåðíàÿ õèðóðãèÿ ÿâëÿåòñÿ íàäåæíûì ìåòîäîì ëå÷åíèÿ ãèïåðòðîôè÷åñêîãî è âàçîìîòîðíîãî ðèíèòîâ.
Íåîáõîäèìî çàìåòèòü, ÷òî åñòü îïðåäåëåííàÿ çàâèñèìîñòü ìåæäó ýôôåêòèâíîñòüþ ðàçëè÷íûõ ìåòîäîâ
ëàçåðíîé õèðóðãèè è äàâíîñòüþ çàáîëåâàíèÿ. Íàèáîëüøåå ïðåäïî÷òåíèå, íà íàø âçãëÿä, ñëåäóåò
îòäàòü êîíòàêòíîìó ëàçåðíîìó âîçäåéñòâèþ, ïîñêîëüêó îíî îïòèìàëüíî ñî÷åòàåò â ñåáå âûñîêóþ
ýôôåêòèâíîñòü è óäîáñòâî äëÿ õèðóðãà. Ïðèìåíåííûé íàìè â ïîñëåäíåå âðåìÿ ïîëóïðîâîäíèêîâûé ëàçåð
ïîêàçàë ýôôåêòèâíîñòü ñîïîñòàâèìóþ ñ êîíòàêòíûì Nd:YAG ëàçåðîì. Êðîìå òîãî, óñòàíîâêà “ÀÒÊÓÑ-15”
îáëàäàåò ðÿäîì ïðåèìóùåñòâ îáëåã÷àþùèõ ðàáîòó õèðóðãà: êîìïàêòíîñòü ïðèáîðà, îòñóòñòâèå âîäÿíîé
ïîìïû, ñîîòâåòñòâåííî âîçìîæíîñòü ðàáîòàòü â ðàçëè÷íûõ ïîìåùåíèÿõ, áåñøóìíîñòü, ïðîñòîòà
ýêñïëóàòàöèè, âîçìîæíîñòü â ïðîöåññå ðàáîòû ïîìåíÿòü ðåæèì (èìïóëüñíûé, íåïðåðûâíûé) è ìîùíîñòü
èçëó÷åíèÿ, íàëè÷èå äàò÷èêà, ôèêñèðóþùåãî îáùóþ ïðîäîëæèòåëüíîñòü èìïóëüñîâ, ÷òî ïîçâîëÿåò â
äàëüíåéøåì àíàëèçèðîâàòü ïðîâåäåííûå âìåøàòåëüñòâà.
ËÈÒÅÐÀÒÓÐÀ
Ãàãàóç À.Ì. ÍÈÀà – ëàçåð â ëå÷åíèè âàçîìîòîðíîãî ðèíèòà. Àâòîðåô. äèññ. .. êàíä. ìåä. íàóê.
Ëåíèíãðàä. 1988. 20 ñ.
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Íàñåäêèí À.Í., Ãðà÷åâ Ñ.Â., Çåíãåð Â.Ã., Øåñòàêîâ À.Â., Èñàåâ Í.Ï., Òàëàëàåâ À.Ã.
Ýêñïåðèìåíòàëüíîå è êëèíè÷åñêîå îáîñíîâàíèå ïðèìåíåíèÿ õèðóðãè÷åñêîãî ãîëüìèåâîãî ëàçåðà â
îòîðèíîëàðèíãîëîãèè. // Ëàçåðíàÿ Ìåäèöèíà. 1997. ò. 1, â. 2, ñ.18-22.
2.
Ïèñêóíîâ Ñ.Ç. Ôóíêöèîíàëüíàÿ äèàãíîñòèêà è ëå÷åíèå ðàçëè÷íûõ ôîðì ðèíèòà. Àâòîðåô. Äèññ…
äîêò.ìåä.íàóê. Ì.-1986.
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Ïëóæíèêîâ Ì.Ñ., Èâàíîâ Á.Ñ., Ãàãàóç À.Ì. ÍÈÀÃ-ëàçåð â ëå÷åíèè âàçîìîòîðíûõ ðèíèòîâ //
Àêòóàëüíûå âîïð. îòîðèíîëàðèíãîë. Ýñòîíñêîé ÑÑÐ.- Òàëëèí, 1986.- Ñ.57-58.
4.
Ïëóæíèêîâ Ì.Ñ., Ëîïîòêî À.È., Ãàãàóç À.Ì. Ëàçåðû â ðèíîôàðèíãîëîãèè.- Êèøèíåâ, 1991.- Ñ160.5. Ïëóæíèêîâ Ì.Ñ., Ëîïîòêî À.È., Ðÿáîâà Ì.À. Ëàçåðíàÿ õèðóðãèÿ â îòîðèíîëàðèíãîëîãèè.
Ìèíñê-2000.- Ñ103-113.
6.
Elwany S., Abdel-Moneim M.N.Carbon dioxide laser turbinectomy. An electron microscopic
study. J.Laryngol Otol (UK) Oct 1997 111 (10) p 931-934.
7.
Englender M. Nasal laser mucotomy (L-mucotomy) of the inferior turbinates. // The Journal
of Laryngol. And Otology. April 1995, v. 109, p. 296-299.
8.
Grossenbacher R. Laserchirurgie in der Oto-Rhino-Laryngology. Stuttgart. New York.
Thiewe. 1885.79s.
9.
Grymer L.F., Illum P., Hilberg P. Septoplasty and compensatory inferior turbinate
hypertrophy. A randomized study evaluated by acoustic rhinometry. // 1993. - J. Laryngol.
Otol. V. 107, p. 413-417.
10.
Janda P., Sroka R., Baumgarter S., Cirevers G., Leuning A. Holmium: YAG - Laser
treatment of hiperplastic inferior nasal turbinates. // Las. Surg. Med. 1999, suppl. 11, p.
48, ¹205.
11.
Jones N. Lasers in rhinology. // Lasers in ENT. 1999, v.8, ¹4, Sept./Oct., p.19.12. Levine H.L. Rhinologic surgery. // KTP/YAGTM clinical Updates in Otorhinolaryngology,
1992. -p.6-8.
13.
Levine H.L. Rhinologic surgery. // KTP/YAGTM clinical Updates in Otorhinolaryngology,
1992. -p.6-8.
14.
Mirante J.P., Munier M.A. Combined CO2 Laser Septoplasty, Turbinate Resection and Laur
// Las. Surg. Med., 1999, Suppl 11, p 48, ¹200.
15.
Ïðèìåíåíèå ïîëóïðîâîäíèêîâûõ âûñîêîýíåðãèòè÷åñêèõ ëàçåðîâ â ëå÷åíèè õðîíè÷åñêèõ ðèíèòîâ.
Mittleman H. Carbon dioxide laser turbinectomy for chronic obstructive rhinitis. // Lasers
Surg. Med., 1982, v. 2, p. 29-36.
16.
Mladina R., Risavi R., Subaric M. CO2 laser anterior turbinectomy in the treatment of
non-allergic vasomotor rhinopathia. A prospective study upon 78 patients. // Rhinology 29,
267-272, 1991.
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Ossoff R.H., Hotaling A.J., Karlan M.S., Sisson G.A. CO2 laser in otolaryngology - Head and
Neck Surgery: a retrospective analysis of complications. // Laryngoscope. 1983, v. 93, ¹10,
p. 1287-89.
18.
Rosles P., Sroka R., Leunig A., Janda P. Development of a new tool for application of lasers
in nasal turbinate surgery. // Las. in Surg. and Med., 1999, suppl. 11, p 48, ¹207.
19.
Ruckley R.W., The nose, the pharynx and the ear. p.141-151. In: The CO2 Laser in
Otolaryngology and Head and Neck Surgery Ed. Oswal V.H., Kashima H.K., Flood L.M.
publ.Wright . 1988. 200p.
20.
Selkin S.A., Roussos C.L. Rhinoseptoplasty and partial superior turbinectomy. The CO2
laser and bipolar cautery compared. // International Journal of Aesthetic Surgery., v.2, ¹2,
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21.
Selkin S.G. Pitsalls in intranasal laser surgery and how to avoid them. // Arch. Otolaryngol.
Head Neck Surg. -v. 112, March 1986.
22.
Williams J.D. Laser vidian neurectomy. Ann. Otol. St. Lous. 1983. 92 (3) p.281-283.23. Wolfson S., Wolfson L.R., Kaplan I. CO2 laser inferior turbinectomy: a new surgical
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Ïðèìåíåíèå ïîëóïðîâîäíèêîâûõ âûñîêîýíåðãèòè÷åñêèõ ëàçåðîâ â ëå÷åíèè õðîíè÷åñêèõ ðèíèòîâ.
Selective laser hyperthermia of malignant neoplasms:
experimental and clinical research
M.L.Gelfond1, I.V.Mizgirev1, A.S.Barchuk1, V.V.Hudoley1, D.V. Vasilyev1,
F.V.Balluzek2, A.A.Venkov2, V.P.Chaly3, A.L.Ter-Martirosyan3
1N.N.Petrov Research Institute of Oncology,
2Medical Academy for Postgraduate Education,
3“ATC-Semiconductor Devices”, Saint-Petersburg, Russia.
ABSTRACT
Experimental study of various modes of the semiconductor laser irradiation upon Ehrlich carcinoma in mice
was carried out. Optimal patterns for distance laser scanning irradiation resulting in practically complete
healing of experimental animals, were found. Selective damage of tumor tissue subjected to laser
irradiation at 800 nm was evidenced in the absence of a photosensitising agent. The results of a clinical trial
completely corresponded to the experimental data. The treatment proved to be efficient in all 28 patients.
Keywords: semiconductor lasers, hyperthermia, malignant neoplasms
1. INTRODUCTION
Clinical applications of laser technologies today are becoming more routine in treatment of both malignant
and benign neoplasms.
Nd:YAG lasers have proved to be an effective surgical instrument for coagulation and incisions, for
haemostasis and prevention of postoperative pain1. At the same time, the usage of solid state laser is
inconvenient due to the indispensable water cooling, the necessity of field lines, considerable size and
weight of an apparatus. Therefore, the introduction of semiconductor (diode) lasers became a very
important event in the clinical practicing. These lasers are powerful enough, but at the same time are
portable, air cooled, require ordinary electric lines. Preliminary comparative experimental studies of the
effect of neodim and semiconductor lasers upon biological tissues revealed certain differences. It is
important that a semiconductor laser emitting at 805 nm causes a smaller area of vaporization and of
coagulation necrosis around the face of the fiber. Besides, the diode laser irradiation results in a larger area
of hyperthermia, which provokes the thermal necrosis of the tumor2.
Nowadays, laser induced thermotherapy (LITT) is widely used in oncology to treat benign and malignant
neoplasms of various localization3-5. Recent studies in this field of laser medicine are dedicated to the
increase of hyperthermia efficiency resulting from the improvement of the irradiation parameters (the
method of thermooptical feedback), but also from using various optical headers and cooled fiber face6-8.
2. MATERIALS AND METHODS
A clinical trial of a pilot specimen of semiconductor laser model ATC-2550 (manufactured by
“ATC-Semiconductor Devices”) were accomplished in the N.N.Petrov Research Institute of Oncology.
Ehrlich carcinoma was used as an experimental model. Tumor cell suspension was injected intracutaneously
in one leg and in the back of inbred mice (three injection nodes per animal). The tumor growth period was
6-7 days. By that time, the tumor nodes varied in size from 6x6 mm to 8x8 mm.
The following laser device emitting at 800 nm were used in the experiments:
Selective laser hyperthermia of malignant neoplasms - Article to SPIE
Single diode laser with optical focusing system and regulated output power from 0 to 950 mW1. Six diode laser with regulated output power from 0 to 2.2 W.1.
Animals of 22-26 g were intraperitoneally injected 0.2 ml of 20% sodium oxibutirate solution to achieve
efficient anaesthesia, after which they were irradiated in a scanning mode. The size of each single
irradiation field was 5? 5 mm and 7.5? 7.5 mm. The total area irradiated was 15? 15 mm (9 and 4 fields,
respectively). Exposure time varied from 29 sec to 5 min.
The following irradiation schemes and modes were used:
The laser output power was 950 mW. There were 9 irradiation fields of 5? 5 mm each. Exposure time
was 2, 3, 4 and 5 min for each field.
1.
The laser output power was 950 mW. There were 4 irradiation fields of 7.5? 7.5 mm each. Exposure
time was 6 min 45 sec and 11 min 15 sec for each field. The absorbed dose was the same as in the
first scheme due to the increase of exposure time.
1.
The laser output power was 950 mW. There were 9 irradiation fields of 5? 5 mm each. Exposure time
was 3 min for each field. The second irradiation session was performed in 48 hours.
2.
The laser output power was 950 mW. There were 9 irradiation fields of 5? 5 mm each. Exposure time
was 3 min for each field. The treatment course consisted of 3 sessions separated by a 48-hour
interval.
3.
The laser output power was 2 W. There were 9 irradiation fields of 5? 5 mm each. Exposure time was
30, 60, and 90 sec for each field.
4.
The irradiated surface was fanned with air at a speed of 1.5 l/min (t° =23° C) to increase the heat
interchange and to study its input into the temperature increase in the tissues.
At least 10 animals were included in each control and experimental group. 800 mice were used in total.
3. RESULTS OF EXPERIMENTAL STUDIES
Our results demonstrate that the main damaging constituent of semiconductor laser irradiation applied to
the malignant neoplasms is the local hyperthermia resulting from partial absorption of the irradiation.
The temperature was measured by thermal resistor microelement MT-54 (produced by SKB Agrophysics
SRI), connected to the digital ohmmeter Ù-4300. The number of measurements for every time point ranged
from 6 to 10, depending on the experimental series, and on rate at which the thermal balance of the
system was achieved. Mean values and standard deviations were calculated for each point.
It was found that after 5 and 10 min of irradiation the temperature of the tumor surpasses that of the skin
by 5° C and 10° C, respectively, and mounts to 59° C. Each decrease of irradiation power by 0,25 W results
in a respective 5° C drop of the tumor temperature after a 10-min exposure. Similar results are observed
when the power density is decreased by enlargement of the irradiation field surface.
Upon cooling the tissues by air-fanning the temperature decreased by 5° C both in tumor and in the intact
tissues, the same temperature gap of 5° C between tumor and skin remaining. However, the temperature
stabilization was achieved more rapidly.
The analysis of the effect of the treatment under various irradiation patterns showed the following:
Pattern 1: No effect is observed when the irradiation power is 950 W and the exposure time is 2 min. 48
hours after a 3 -min irradiation the tumor is absent in 30% of the animals, after 4 and 5 - min exposures
the respective figure is 90%. Flat crusted ulcers replaced the tumor nodes. At the same time, in 2 months
80% of the animals irradiated for 4 min suffered from recurrence of the tumor. However, the tumors
recurred or continued to grow only in 40% of the mice irradiated for 5 min.
Pattern 2: Despite that the decrease of power density was compensated by a prolonged exposure (6 min 45
sec and 11 min 15 sec), no significant therapeutic effect was observed.
Selective laser hyperthermia of malignant neoplasms - Article to SPIE
Pattern 3: 48 hours past the second irradiation session there were no visible signs of tumor growth in 92%
of the animals.
Pattern 4: 48 hours past the third irradiation session there were no visible signs of tumor growth in 83% of
the animals.
Pattern 5: 48 hours past the 30-sec irradiation session the tumor continued to grow in 90% of the animals.
100% of the animals did not have any signs of the tumor within 48 hours following 60 and 90-sec long
irradiation.
The following macroscopic tissue reactions after effective irradiation patterns were present.
Oedema and pallor of the surrounding tissues were observed in 30 min - 3 hours. Necrosis of tumor and
skin over the tumor node developed in the first 24 hours. Later, flat ulcer covered with crust developed in
the place of the tumor. The ulcer size differed and corresponded to the size of the tumor node. This can be
explained by the selectivity of the effect. The highest selectivity was observed after 4 or 5-min exposure
with laser irradiation output power of 950 W and after 1 minute exposure with 2 W output power. Multiple
irradiation sessions were approximately 40% more effective than a single session. As already mentioned,
hyperthermia was the main tumor-damaging effect of semiconductor laser. This is evidenced by comparison
of the experimental results in the animal groups differing in air-fanning of the irradiated surface. It seems
evident that if the damaging mechanisms were other than the thermal lesion (e.g. excessive accumulation
of endogenous porphyrines in the tumor cells) an additional way of heat dissipation would not have affected
the results. The fundamental difference in the results obtained on tumors engrafted in the foot as compared
to those provoked by subcutaneous injections in the back speaks in favor of our assumption. In the first
case, regardless of much longer direct laser irradiation (the maximum exposure time was 30 min while the
subcutaneous tumors on the back were irradiated for 5 min ad maximum), only superficial burns were
obtained with no effect upon the neoplasm, and in a few cases complete disruption of the limb tissues was
observed after maximum exposure. In contrast, with the tumor grafted subcutaneously in the back, a
5-min exposure was sufficient to destroy the tumor tissues. These facts can be explained in the following
way: when grafted in the foot, the tumor replaces almost all its volume and, therefore, is almost completely
subjected to the ambient temperature, which is much lower as compared to that of internal tissues of the
organism. Besides, the limbs in mice have a high thermoregulaion ability, since they are in permanent
contact with surfaces that may have temperatures differing in a wide range. When the tumor is grafted
subcutaneously in the back, it mainly adjoins the internal tissues of the organism and, hence, has a higher
temperature than the one engrafted in the foot. Therefore, when applying external heat (e.g., by laser
irradiation) to the tumor engrafted subcutaneously in the back, one will obtain higher temperature, than in
the tumor grafted in the foot.
There is another important aspect to be taken into account when interpreting the results of the presented
work: the irradiated region is cooled by blood flow. One should consider that blood circulation in the tumor
tissue is hindered due to blood vessels malformation9, 10. Thus, the heat dissipation in tumor might be
lower than in normal tissues. This may result in a more pronounced heating of the tumor irradiated by
laser. Actually, direct temperature measurement of the irradiated region revealed that after 5 min of
exposure the tumor tissue is heated 5° C higher than normal tissues (skin) on average. It seems lilkely that
this phenomenon underlies the selective tumor tissue damage observed in some experiments. Particularly
interesting is the analysis of the results in the animal group with an extremely high selectivity of the tumor
tissue damage. The mechanism of this phenomenon can be as follows. During the first irradiation session
the capillary blood flow in the tumor gets arrested and microscopic necrotic areas varying in depth of their
localization are formed. Normal tissues are not affected. During the second session these areas are heated
to a somewhat higher degree due to the absence of the circulation, of which poor thermal interchange is
the result. This, in turn, leads to a significant heating of the surrounding tissues due to the heat transfer.
When the tumor nodes are relatively small (up to 10? 10 mm), as it was in our study, the areas of necrosis
completely correspond to the tumor limits after the third irradiation session. At the same time there are no
such necrotic areas in the normal tissues with good circulation and these tissues stay unaffected.
Our most important goal can be outlined as revealing the regularities that allow to predict a therapeutic
effect in correlation both to the parameters of laser irradiation and to the exposure time, as well as the
Selective laser hyperthermia of malignant neoplasms - Article to SPIE
thermal effects arising from the absorption of laser energy by a particular tumor. If such a regularity is
linear, one can use the obtained results to develop a mathematical model and to compute the irradiation
parameters for a laser of any non-therapeutic output power.
At the same time one of the main approaches that helps to increase the efficiency of treatment is an
artificial augmentation of the selectivity of laser energy absorption. This can be achieved by increasing the
output power of an apparatus, by irradiating the surrounding tissues to arrest blood circulation or by
multiple scanning of the tumor node. There are also other solutions for the problem.
4. PRELIMINARY CLINICAL STUDIES
Clinical trial of laser-induced tumor thermotherapy was performed in N.N. Petrov Research Institute for
Oncology on volunteers who had histologically documented neoplasms of various origin and localization.
These studies were based on the results of experimental research described above. Semiconductor laser
with regulated output power ranging from 0 to 5 W was used. The irradiation was delivered to the affected
object via a fiber of 600 m m in diameter. The clinical studies were performed according to the specially
developed protocol. 29 patients were treated from May to September, 1998. Patients with tumors of
various localization were included in the group to elaborate the irradiation patterns and technique. The
following nosologic forms were presented: basocellular skin carcinoma ? 13 cases, squamocellular skin
carcinoma ? 2 cases, skin melanoma ? 7 cases, breast cancer ? 3 cases, recurrence of bronchial carcinoma
? 1 case, bronchial carcinoid ? 2 cases, lymphosarcoma ? 1 case.
Along with the interstitial hyperthermia we used distance laser scanning of tumors. The method of
interstitial hyperthermia is largely used in clinical practice. According to this method the fiber is driven
inside the node to achieve coagulation and often even carbonization of the surrounding tissues. When
performing distance laser scanning the irradiation power density was selected so that tumor temperature
would increase to 45-60° C. Air bubbles were formed in the blood vessels of the tumor (gas phase) and the
interstitial fluid drooled from the node (liquid phase). In the following irradiation sessions the density of
irradiation power had to be decreased to avoid coagulative necrosis and carbonization of the tissues due to
the loss of the fluid by the tumor and the increase of its thermal conductivity. These effects had been
previously observed in experiments. Already after 24 hours we evidenced a significant contraction of tumor
along with haemostasis and thrombosis accompanied by circulation impairment in it. The subsequent
irradiation sessions enhanced these changes, leading to a complete or significant lysis of the tumor tissues.
Some clinical observations and results of laser thermotherapy in patients are presented below.
4.1. Laser thermotherapy in patients with basocellular skin carcinoma
The distance scanning method was applied with the field size of 0.5 cm. Irradiation parameters are
presented in Table 1.
By the end of the irradiation session we observed the oedema and the change in the color of irradiated
tissues. Laser irradiation power was decreased for the second session to avoid coagulative necrosis with
cabronization of the affected surface.
Upon completion of the treatment there was a crusted ulcer with smooth edges in the place of the tumor.
The ulcer was rapidly covered with epithelium, leaving almost an imperceptible cicatrix. This method turned
out to be very efficient in treatment of multiple skin basaliomas. There were 16 skin basaliomas in one
patient, all of which were successfully cured by laser thermotherapy.
Table 1: Laser Irradiation parameters for skin basaliomas treatment
Irradiation parameters Irradiation sessions
1 2 3 4 5
Irradiation power, W 2.0 2.0 1.5 1.5 1.0
Selective laser hyperthermia of malignant neoplasms - Article to SPIE
Irradiation field diameter, cm 0.5 0.5 0.5 0.5 0.5
Number of irradiation fields 10 10 10 10 10
Irradiation duration, min 6 5 3 3 3
Power density, W/cm210 10 7.5 7.5 5
Energy density, kJ/cm23.6 3.0 1.4 1.4 0.9
4.2. Laser thermotherapy in patients with skin cancer
In case of skin cancer laser hyperthermia was performed according to the contact method.
E.g., recurrent intracutaneous tumor node was irradiated in patient K. after Krail operation. The fiber was
driven into the center of the tumor node. Irradiation power at the tip was 3.8 W, exposure time was 4 min.
In 24 hours the tumor node size grew down from 2.5 to 1.8 cm, and after 3 days the node was rejected
leaving an ulcer of 1.8 cm in diameter in its place. The walls of the ulcer were covered with necrotic patch.
Cytologically no tumor cells were detected in the material obtained from walls and fundus of the ulcer. In
two weeks shrinkage of the ulcer and multiple granulations were observed.
Similar results were obtained in the second patient suffering from skin cancer on the back.
4.3. Laser thermotherapy in patients with skin melanoma
The protocol included 7 patients with histologically documented skin melanomas of various localization. The
following clinical observation is the most illustrative.
Patient Sh., 74 years old, was admitted to the clinical ward with a skin melanoma 3.2? 3.0? 3.0 cm on the
left shin. Perifocal skin inflammatory alterations occupied the full middle third of the shin. The scanning
protocol of laser thermotherapy with 0.5 cm-1.0 cm irradiation field diameter was applied. Irradiation
parameters are presented in Table 2.
In the process of treatment the patient felt tolerable burning in the irradiated area. In 10-15 sec after
irradiation started the fading of the color of the tissues and the release of air bubbles were observed. In 24
hours the height of the tumor decreased by 1.0 cm. After the second and the third sessions the tumor
shrank by 2.0 cm in diameter and by 1.0 cm in height. In the third session the feeling of burning became
more pronounced and, therefore, irradiation power was decreased threefold with concomitant increase of
the field size to 1.0 cm. In two weeks during control examination no marks of tumor were found in the
irradiation area, the inflammatory changes in the skin reduced. The patient was operated. The excision of
skin flap in the place where the neoplasm had been found previously was performed. Microscopic clumps of
thermally affected melanoma cells were found in the reticular layer of derma upon histological study, with
evident inflammation and lymphohistiocytic infiltration.
Table 2: Irradiation parameters and treatment technique in patient suffering from skin
melanoma
Irradiation parameters
Irradiation sessions
1 2 3
Irradiation power, W 3.0 2.5 1.2
Selective laser hyperthermia of malignant neoplasms - Article to SPIE
Irradiation field diameter, cm 0.5 0.5 1.0
Number of irradiation fields 10 10 10
Irradiation duration, min 6 5 3
Power density, W/cm215 12.5 6
Energy density, kJ/cm25.4 3.8 1.1
It should be emphasized that high content of melanin in tumor increases the absorption of irradiation by
the superficial layer of the tumor. It leads to carbonization of this layer that starts impeding the irradiation
and, thus, hampers the heating of the rest of the tumor. When treating skin melanomas with high pigment
content, power density on the neoplasm surface should be decreased with the exposure prolonged. Later in
our work we took this fact into account and the efficiency of thermotherapy incerased significantly.
4.4. Laser thermotherapy in patients with breast cancer
The protocol included 3 patients suffering from histologically documented nodulous breast carcinoma on
IIIb stage. All the patients were subject only to laser-induced thermotherapy. Irradiation was performed
according to the scanning pattern with a special optical system or fiber directed at various angles towards
the skin surface. The output laser power was 3-4 W, power density on the skin surface was 15-20 W/cm2.
Exposure time for each irradiation field was 5 min, energy density per field was 4.5-6.0 kJ/cm2. By the third
session the tumor grew significantly smaller and by the tenth it reduced twofold. As judged by the results of
ultrasonic examination, the tumor density was equal to such of connective tissue. The following case can be
presented as an example.
Patient G., 77 years old was examined in the Research Institute for Oncology. Nodulous carcinoma of the
left breast with ulceration of 5 cm in diameter and multiple intracutaneous metastases was found.
Histological examination revealed low-differentiated adenocarcinoma. Surgery could not be the choice due
to pervasion degree and associated diseases. Diode laser thermotherapy was started. The treatment was
performed according to the distance pattern. Power density at the surface was 15 W/cm2. 10 fields were
irradiated with exposure time of 1 minute per field. Power density per field was 0.9 kJ/cm2 in total. By the
third session due to severe impairment of circulation in the tumor and the increase of its thermal
conductivity the power density was decreased to 3.8 W/cm2 and exposure time was prolonged to 2 min per
field. Thus, the power density per field was 0.4 kJ/cm2. According to the results of control mammography
performed one month past the beginning of the treatment the tumor dimensions reduced twofold.
Mammography results before treatment and after tenth laser thermotherapy session are presented in
Figures 1-2. Currently, taking into account the effect obtained, the treatment is being continued. There are
no visual signs of tumor and the dimensions of intracutaneous metastases grew significantly smaller.
4.4. Laser thermotherapy in patients with other tumors
Both contact and distance irradiation patterns were used to treat bronchial carcinoid and recurrent bronchial
cancer after pneumonectomia. Full regression of neoplasms was obtained.
One patient with upper jaw lymphosarcoma was successfully treated by laser induced hyperthermia after
unsuccessful chemo- and radiotherapy. Figures 3-4.
5. CONCLUSIONS
Therefore, the results of clinical semiconductor laser thermotherapy trial of malignant neoplasms of various
localization fully correspond to the presented experimental results as well as to the results that we obtained
previously for solid state laser interstitial hyperthermia11. Laser-induced distance pattern thermotherapy of
tumor results in selective tumor hyperthermia with temperature ranging from 45° C to 60° C and
subsequent tumor lysis. Presently we keep improving the parameters of laser irradiation and medical
Selective laser hyperthermia of malignant neoplasms - Article to SPIE
technologies for thermotherapeutical treatment of neoplasms of various localization are being developed.
6. ACKNOWLEDGEMENTS
The authors of this work would like especially to thank the following organizations:
The Ministry of Science of Russian Federation1. St.Petersburg Regional Foundation of Scientific and Technical Development2.
7. REFERENCES
K.Leggatt. “Medical Lasers Are at the Threshold of a New Era”
//Biophotonics International - 1998.-Sept.-Oct.-pp.42-46.
A.Wyman, H.M.Sweetland, F.Sharp, K.Rogers. “Preliminary evaluation of a new high power diode
laser” //Lasers in Surgery and Medicine- 1992.-v.12.-pp.506-509.
D.Albrecht, Th.Germer, C.Isbert et al.//Digestive Disease Week. The Society for Surgery of the
Alimentary Tracts.-Abstr.-1997.
D.H.Sliney, M.L.Wolbacsht.//Journal of the Royal Society of Medicine.-1989.-v.82.-pp.293-296.
K.G.Tranberg et al. “Interstitial Laser Thermotherapy: Preliminary experience in patients”
// SPIE.-1995.-PM25.-pp.468-476.
K.G. Tranberg, K.Ivasson et al. “Interstitial laser thermotherapy using feedback control and
monitoring with electrical impedance tomography; review of studies in vitro and
vivo”//SPIE.-1995.-PM25.-pp.354-365.
K.V.Prihodko, A.V.Belikov. “Application of thermooptical feedback in laser surgery”
//Semiconductor and Solid State Lasers in Medicine. International
Workshop.St.-Petersburg.-1997.-p.29. (in Russian)
Dowlatshahi Kambiz, J.D. Baugert et al. “Protection of fiber function by para-axial
fluid flow in interstitial laser therapy of malignant tumors” //Laser Surgery and
Medicine.-1990.-10,N.5.-pp.322-327
J. Folkman. “Tumour angiogenesis”// In: Advances in Cancer Research, New York.-1974.- p.
331-356
L. Karlsson, M. Alpstein, K.L.Appelgren, N.G. Peterson “Intratumor distribution of blood flow and
of vascular volume in transplantable rat sarcoma”// J. Cancer Res. and Clin. Oncol., 1980, n.3,
v.98, p. 213-219.
M.L.Gelfond, A.S.Barchuk, S.V.Kanaev “Endoscopic laser destruction in combined treatment of
lung cancer”//Voprosi Onkologii.-1996.-ò.42.-N.2.-ñ.37-39 (in Russian)
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Selective laser hyperthermia of malignant neoplasms - Article to SPIE
Selective laser hyperthermia of malignant neoplasms:
experimental and clinical research
M.L.Gelfond, A.S. Barchuk, A.V.Mizgirev, V.P. Chaliy, A.L. Ter-Martirosian
N.N.Petrov Institute of Oncology, St.-Petersburg
ATC- Semicondactor devices, St.-Petersburg
Clinical applications of laser technologies today are becoming more routine in treatment of both
malignant and benign neoplasms.
Nd:YAG lasers have proved to be an effective surgical instrument for coagulation and incisions,
for haemostasis and prevention of postoperative pain1. At the same time, the usage of solid state
laser is inconvenient due to the indispensable water cooling, the necessity of field lines,
considerable size and weight of an apparatus. Therefore, the introduction of semiconductor
(diode) lasers became a very important event in the clinical practicing. These lasers are powerful
enough, but at the same time are portable, air cooled, require ordinary electric lines. Preliminary
comparative experimental studies of the effect of neodim and semiconductor lasers upon
biological tissues revealed certain differences. It is important that a semiconductor laser emitting
at 805 nm causes a smaller area of vaporization and of coagulation necrosis around the face of
the fiber. Besides, the diode laser irradiation results in a larger area of hyperthermia, which
provokes the thermal necrosis of the tumor.
A clinical trial of a semiconductor As-Ga laser Atcus-15 (manufactured by ATC-Semiconductor
Devices) were accomplished in the N.N.Petrov Research Institute of Oncology.
Ehrlich carcinoma was used as an experimental model. Tumor cell suspension was injected
intracutaneously in one leg and in the back of inbred mice (three injection nodes per animal).
Our results demonstrate that the main damaging constituent of semiconductor laser irradiation
applied to the malignant neoplasms is the local hyperthermia resulting from partial absorption of
the irradiation.
It was found that after 5 and 10 min of irradiation the temperature of the tumor surpasses that
of the skin by 5° C and 10° C, respectively, and mounts to 59° C. Each decrease of irradiation
power by 0,25 W results in a respective 5° C drop of the tumor temperature after a 10-min
exposure. Similar results are observed when the power density is decreased by enlargement of
the irradiation field surface.
Clinical trial of laser-induced tumor thermotherapy was performed in N.N. Petrov Research
Institute for Oncology on volunteers who had histologically documented neoplasms of various
origin and localization. These studies were based on the results of experimental research
described above. Semiconductor laser with regulated output power ranging from 0 to 15 W was
used. The irradiation was delivered to the affected object via a fiber of 600 mm in diameter. The
clinical studies were performed according to the specially developed protocol. 64 patients were
treated.
Therefore, the results of clinical semiconductor laser thermotherapy trial of malignant neoplasms
Selective laser hyperthermia of malignant neoplasms - Short version
of various localization fully correspond to the presented experimental results as well as to the
results that we obtained previously for solid state laser interstitial hyperthermia. Laser-induced
distance pattern thermotherapy of tumor results in selective tumor hyperthermia with
temperature ranging from 45° C to 60° C and subsequent tumor lysis. Presently we keep
improving the parameters of laser irradiation and medical technologies for thermotherapeutical
treatment of neoplasms of various localization are being developed.
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Selective laser hyperthermia of malignant neoplasms - Short version
ATÑUS-15 Semiconductor Laser in treatment of cutaneous
vascular displasia
M.L.Gelfond
N.N.Petrov Institute of Oncology, St.-Petersburg
When taking into account only population morbidity and mortality structure, one may consider
the problems of haemangiomas’ diagnostics and treatment to be insignificant. However, it is very
important to relief severe psychological stress experienced by parents and children, especially in
process of pubescence.
In the USA 40.000 children are born annually with haemangiomas and vascular dispasias.
Haemangiomas can regress spontaneously, unlike the vascular displasias. This makes correct
diagnostics very important in the newborn in order to choose optimal treatment tactics.
Previously wait-and-see attitude was common. Nowadays, specialists tend to act more radically.
Remarkable therapeutic and cosmetic affects can be achieved in early childhood after surgery or
laser therapy, with the latter being the method of choice.
Usually alexandrite, argon and dye lasers are used. YAG:Nd, CO2 and copper vapor lasers
application is frequently complicated with skin burns and unpredictable cosmetic effects.
Recently we started using photodynamic therapy (PDT). This method is based on photochemical
reaction in process of photosensitizer and laser irradiation interaction. The vessel endothelium is
damaged with subsequent thrombosis. Currently PDT is successfully applied in oncology practice.
Assuming that the tumor vascular system is morphologically similar to the cutaneous zone of
vascular displasias, we suggest that photodynamic reactions damage the vascular displasia’s
endothelium in the same way.
16 children and adults undergone PDT with good cosmetic effect. This method is patented in
Russian Federation.
Atcus-15 laser works both in continuous wave and pulse modes at 800 nm wavelength. It can be
used to treat haemangiomas, vascular displasias, angiomas, capillary ectasias etc. The method is
based on delicate sparing thermal vascular damage. Irradiation parameters were experimentally
chosen and optimized. There are also intraoperative and postoperative methods of skin burns
and scarring prevention. 45 patients were treated with a remarkable cosmetic effect.
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ATCUS-15 Semiconductor Laser in treatment of cutaneous vascular displasia
Laser treatment cases This page is under costruction. Sorry for any
inconvenience.
Case 1. Tumour of the upper jaw.
The patient had been ill since 1996. In that period of time 4 courses of the chemotherapy were
realized however up to October 1998 the tumour was going on to progress, at that it extended
on the antrum of Highmore and covered all the left chick. In October he applied for help. 8 cycles
of the hyperthermia by the contact transdermal method were made. The tumour sharply
decreased in its dimensions, it isn't palpated, the metastasis are absent. The condition of the
patient is satisfactory. The active observation is going on.
Laser treatment cases
Case 2.
Female patient of 75 years old, was inspected at the out-patient treatment in the polyclinic of the
Oncology Research and Development Institute. It was revealed the presence of the nodular
swelling form tumour of the left mammary gland with the ulceration, the internal metastasis and
the injury of the axillary lymph nodes on the left. The dimensions of the tumour are 43x30x50
mm. The histological diagnosis is a moderate differentiated adenocarcinoma. The cycle of the
distant thermotherapy was begun on the 07.09.98. The cycles of the irradiation were carried
twice a week. The first stage included 12 cycles. The second stage of the thermotherapy was
begun in November of 1998. In accordance with the facts of the mammography before the
second stage of the treatment the dimensions of the tumour decreased and constituted
15x20x30. By now the exophytic part of the tumour was healed. There is an ulcer with the
bolster-like border of the dimensions 30x15 mm. The dimensions of the intracutaneous
metastasis were essentially decreased. The part of them isn't determined by palpation. The
course of the distant thermotherapy is going on.
Laser treatment cases
Ïðèìåíåíèå õèðóðãè÷åñêîãî ïîëóïðîâîäíèêîâîãî ëàçåðíîãî
êîàãóëÿòîðà â êîñìåòîëîãèè
Îáùèå ïîëîæåíèÿ
Õèðóðãè÷åñêàÿ òåõíèêà ëå÷åíèÿ äîáðîêà÷åñòâåííûõ íîâîîáðàçîâàíèé êîæè ðåãëàìåíòèðóåòñÿ îáùèìè
çàêîíàìè ïëàñòè÷åñêîé õèðóðãèè. Ïåðåä ïðîâåäåíèåì ëàçåðíîé îïåðàöèè ñëåäóåò îöåíèòü
ôèçèîëîãè÷åñêèå ïàðàìåòðû êîæè, åå ñïîñîáíîñòü ê ðåïàðàòèâíûì ïðîöåññàì áåç îáðàçîâàíèÿ
ãèïåðòðîôè÷åñêèõ è êåëëîèäíûõ ðóáöîâ. Âàæíîå çíà÷åíèå èìååò òàêæå ñîñòîÿíèå êîæíûõ ïîêðîâîâ,
îñîáåííî åñëè âðà÷ èìååò äåëî ñ òàê íàçûâàåìîé "ïðîáëåìíîé" êîæåé, ñêëîííîñòü ïàöèåíòà ê âèðóñíûì åå
ïîðàæåíèÿì è ò.ä. Òîëüêî ïîñëå òùàòåëüíîé îöåíêè âñåõ ýòèõ ïîêàçàòåëåé ìîæíî ïðèñòóïàòü
íåïîñðåäñòâåííî ê ëàçåðíîé îïåðàöèè.
Êîíòàêòíûé ðåæèì âîçäåéñòâèÿ íà êîæó, íåïðåðûâíûé èëè èìïóëüñíûé õàðàêòåð èçëó÷åíèÿ âî ìíîãîì
îïðåäåëÿþò êîñìåòè÷åñêèé ðåçóëüòàò îïåðàöèè. Ñêîðîñòü è õàðàêòåð ðåïàðàòèâíûõ ïðîöåññîâ
îïðåäåëÿþòñÿ òàêæå ïîñëåîïåðàöîííûì âåäåíèåì îæîãîâîé òðàâìû, èñïîëüçîâàíèåì òåõ èëè èíûõ
ëåêàðñòâåííûõ ñðåäñòâ, ëå÷åáíîé è ïðîôèëàêòè÷åñêîé êîñìåòèêè.
Ëàçåðíûå îïåðàöèè ïðîâîäÿòñÿ ïîä ìåñòíîé èíôèëüòðàöèîííîé àíåñòåçèåé èëè áåç íåå ïðè íåáîëüøèõ
ðàçìåðàõ óäàëÿåìûõ îáðàçîâàíèé.
Óäàëåíèå ïàïèëëîì êîæè
Âèä àíåñòåçèè: ìåñòíàÿ àíåñòåçèÿ ëèäîêàèíîì èëè íîâîêàèíîì èëè áåç àíåñòåçèè
Õàðàêòåð èçëó÷åíèÿ: èìïóëüñíûé èëè íåïðåðûâíûé
Ìîùíîñòü èçëó÷åíèÿ: 1-3 Âò
Òåõíèêà îïåðàöèè. Ïàïèëëîìà çàõâàòûâàåòñÿ ïèíöåòîì èëè çàæèìîì òèïà "ìîñêèò" è íîæêà îáðàçîâàíèÿ
êîàãóëèðóåòñÿ òàê, ÷òîáû òîðåö ñâåòîâîäà íàõîäèëñÿ íà ãðàíèöå ìåæäó íîæêîé ïàïèëëîìû è çäîðîâîé
êîæåé. Íå ñëåäóåò ÷ðåçìåðíî îòòÿãèâàòü îáðàçîâàíèå îò ïîâðåõíîñòè, òàê êàê ýòî ìîæåò óâåëè÷èòü
ïëîùàäü îæîãà îêðóæàþùåé êîæè.
Ïðè ìàëûõ ðàçìåðàõ ïàïèëëîìû îíà êîàãóëèðóåòñÿ öåëèêîì â ïðåäåëàõ íåèçìåííîé êîæè. Ìåñòî
êîàãóëÿöèè îáðàáàòûâàåòñÿ ñïèðòîì èëè ðàñòâîðîì ìàðãàíöåâîêèñëîãî êàëèÿ.
Äëÿ óñêîðåíèÿ ýïèòåëèçàöèè ìîæíî èñïîëüçîâàòü æåëå èëè ìàçü "Ñîëêîñåðèëîâàÿ".
Óäàëåíèå ôèáðîì êîæè
Âèä àíåñòåçèè: ìåñòíàÿ àíåñòåçèÿ ëèäîêàèíîì èëè íîâîêàèíîì.
Ìîùíîñòü èçëó÷åíèÿ: 3 Âò
Òåõíèêà îïåðàöèè. Ñâåòîâîäîì ïðîâîäÿò îêàéìëÿþùèé ðàçðåç òî÷íî ïî ãðàíèöå îáðàçîâàíèÿ ñî çäîðîâîé
êîæåé íà ãëóáèíó 1-2 ìì. Ïî âîçìîæíîñòè îáðàçîâàíèå çàõâàòûâàþò ïèíöåòîì è ïðîèçâîäÿò îòñå÷åíèå
ôèáðîìû îò ïîäëåæàùèõ òêàíåé òî÷íî ïî åå ãðàíèöå, ïðîèçâîäÿ òîðöåì ñâåòîâîäà äâèæåíèÿ, àíàëîãè÷íûå
îáû÷íîé õèðóðãè÷åñêîé òåõíèêå. Ïðè ýòîì ïèíöåòîì ôèáðîìó âñå áîëüøå îòòÿãèâàþò íà ñåáÿ. Ïîñëå
óäàëåíèÿ ïðåïàðàòà ïðîâîäÿò îêîí÷àòåëüíóþ êîàãóëÿöèþ êðîâîòî÷àùèõ êàïèëëÿðîâ. Îæîãîâóþ
ïîâåðõíîñòü îáðàáàòûâàþò êîíöåíòðèðîâàííûì ðàñòâîðîì ìàðãàíöåâîêèñëîãî êàëèÿ. Â ïîñëåîïåðàöèîííîì
ïåðèîäå îæîãîâóþ ïîâåðõíîñòü â òå÷åíèå 4-5 äíåé îáðàáàòûâàþò 5% ðàñòâîðîì ìàðãàíöåâîêèñëîãî
Ïðèìåíåíèå õèðóðãè÷åñêîãî ïîëóïðîâîäíèêîâîãî ëàçåðíîãî êîàãóëÿòîðà â êîñìåòîëîãèè
êàëèÿ, çàòåì ìàçüþ "Èðóêñîë" äëÿ ôåðìåíòàòèâíîãî î÷èùåíèÿ îò îñòàòêîâ êîàãóëèðîâàííûõ òêàíåé, à
çàòåì èñïîëüçóþò ñîëêîñåðèëîâóþ ìàçü èëè æåëå.
Óäàëåíèå íåâóñîâ
Âèä àíåñòåçèè: ìåñòíàÿ àíåñòåçèÿ ëäèäîêàèíîì èëè íîâîêàèíîì.
Ìîùíîñòü èçëó÷åíèÿ: 1-3 Âò
Ìîùíîñòü èçëó÷åíèÿ îïðåäåëÿåòñÿ ðàçìåðàìè íåâóñà è ñòåïåíüþ åãî âàñêóëÿðèçöèè.
Òåõíèêà îïåðàöèè. Ïðè èíòðàäåðìàëüíîì íåâóñå âîçìîæíà ñïëîøíàÿ êîàãóëÿöèÿ íåâóñà â ïðåäåëàõ
çäîðîâûõ òêàíåé ñêàíèðóþùèìè äâèæåíèÿìè âñåòîâîäà. Ñëåäóåò ñòðåìèòüñÿ ê ïîëíîé êîàãóëÿöèè
ìåëàíèíñîäåðæàùèõ íåâîöèòîâ.
Ïðè íîäîçíûõ èëè ïàïèëëîìàòîçíûõ òèïàõ ïèãìåíòíîãî ïÿòíà òåõíèêà îïåðàöèè è ïîñëåîïåðàöèîííîãî âåäåíèÿ
ðàíû àíàëîãè÷íà òàêîâîé ïðè ëå÷åíèè ôèáðîì êîæè.
Óäàëåíèå àòåðîì êîæè âîëîñèñòîé ÷àñòè ãîëîâû
Âèä àíåñòåçèè: ìåñòíàÿ àíåñòåçèÿ ëèäîêàèíîì èëè íîâîêàèíîì.
Ìîùíîñòü èçëó÷åíèÿ: 3Âò
Òåõíèêà îïåðàöèè. Ñ ïîìîùüþ ñâåòîâîäà ïðîâîäÿò ðàçðåç êîæè ïî äèàìåòðó îáðàçîâàíèÿ. Ðàçðåç
óãëóáëÿþò è âñêðûâàþò êàïñóëó àòåðîìû. Ïóòåì ñäàâëèâàíèÿ àòåðîìû óäàëÿþò åå ñîäåðæèìîå, ïîñëå
÷åãî êðàé êàïñóëû çàõâàòâàþò çàæèìîì, âûòÿãèâàþò â ðàíó è ïîñëå êîàãóëÿöèè ñîñóäîâ íîæêè
îáðàçîâàíèÿ êàïñóëó óäàëÿþò. Ëèíåéíóþ ðàíó îáðàáàòûâàþò ðàñòâîðîì ìàðãàíöåâîêèñëîãî êàëèÿ, ïîñëå
÷åãî êðàÿ ðàíû ñáëèæàþò äî ñîïîñòàâëåíèèÿ.  ïîñëåîïåðàöèîííîì ïåðèîäå ðàíó îáðàáàòûâàþò
êîíöåíòðèðîâàííûì ðàñòâîðîì ìàðãàíöåâîêèñëîãî êàëèÿ â òå÷åíèå 6-7 äíåé.
Ëå÷åíèå êàïèëëÿðîýêòàçèé è àíãèîì êîæè.
Àíåñòåçèÿ íå òðåáóåòñÿ
Ìîùíîñòü èçëó÷åíèÿ: 800 ìâò-3 Âò
Òåõíèêà îïåðàöèè. Ëå÷åíèå êàïèëëÿðîýêòàçèé, ìåëêèõ àíãèîì ïðîèçâîäèòñÿ â äèñòàíöèîííîì ðåæèìå.
Ñëåäóåò ñòðåìèòüñÿ ê ïîáåëåíèþ êîæè íàä ñîñóäîì, íî íå êàãóëÿöèè åå, ÷òî äîñòèãàåòñÿ
ïðåðûâèñòîé ðàáîòîé ïåäàëüþ.. Ñëåäóåò ñòðåìèòüñÿ ê òîìó, ÷òîáû ïîëÿ îáëó÷åíèÿ íå
íàêîëàäûâàëèñü äðóã íà äðóãà, è ñðàçó æå ïîñëå îïåðàöèè êðîâîòîê ïî êàïèëëÿðó ïðåêðàòèëñÿ.
 ïîñëåîïåðàöèîííîì ïåðèîäå íà êîæó íàíîñèòñÿ ñîëêîñåðèëîâîå æåëå èëè ìàçü äëÿ óñêîðåíèÿ
ýïèòåëèçàöèè.
Óäàëåíèå âóëüãàðíûõ áîðîäàâîê.
Ñì. òåõíèêó óäàëåíèÿ ôèáðîì êîæè.
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Ïðèìåíåíèå õèðóðãè÷åñêîãî ïîëóïðîâîäíèêîâîãî ëàçåðíîãî êîàãóëÿòîðà â êîñìåòîëîãèè
Laser diodes and arrays model number coding
ATC-C1000-100-AMF-808-3-F200
Device class:
C = CW laser diodes
Q = QCW linear arrays
Fiber core diameter
micrometers (omitted if no fiber)
Output optical power:
mW for C class
W for Q class
Emitting wavelength tolerance
nanometers
Emitting area width:
micrometers for C class
millimeters for Q class
Emitting wavelength
nanometers
Package type:
A = ATC case
T = TO-3 case
O = open heat-sink
Feedback photodiode:
F = mounted
Î = not mounted
Cylindrical microlens:
M = mounted
O = not mounted
This coding system is used since June 11th, 1999.
Click here to see the previous system.
LD model coding
Laser diodes model number coding - OUTDATED SYSTEM
This coding system is not in use since June 11th, 1999.
Click here to see currently valid system
ATC - a b c d meant the following:
aconstruction and spectral region
0 single mode, l < 0.78 mkm
1 single mode, l = 0.78-0.82 or 0.96-0.98
mkm
2 partially phase locked array, multi mode,
l= 0.78-0.82 or 0.96-0.98 mkm
3 linear array, multi mode,
l = 0.78-0.82 or 0.96-0.98 mkm
bemitting dimensions
1 < 10 mkm
2 11-50 mkm
3 51-100 mkm
4 101-150 mkm
5 151-1000 mkm
6 1001-6000 mkm
7 6001-10000 mkm
coperating mode and output
power
0 pulsed < 3000 mW
1 CW < 100 mW
2 CW 100-499 mW
3 CW 500-999 mW
4 CW 1000-1999 mW
5 CW 2000-4999 mW
6 QCW 5...50 W
7 QCW > 50 W
options
0 without options
1 monitor photodiode
LD model coding - old version
d2 microlens
3 monitor photodiode & microlens
LD model coding - old version
Typical ATC-SD laser diodes characteristics
Light vs current characteristics
Emission spectrum Farfield energy distribution
LD graphs
LD graphs
Package types
Dimensions are given in millimeters. Tolerances ± 0.25 mm.
Packages and cooling head - Drawings
Being completely compatible with common TO-3 package,
ours has a detachable mounting ring.
This gives higher variety of possible applications
and allows to achieve higher density of the device design.
Packages and cooling head - Drawings
Packages and cooling head - Drawings
