BIPOLAR ANALOG INTEGRATED CIRCUIT UPC8106TB D 3 V SILICON RFIC FREQUENCY UPCONVERTER INTERNAL BLOCK DIAGRAM UE FEATURES * RECOMMENDED OPERATING FREQUENCY: fRFout = 0.4 GHz to 2.0 GHz fIFin = 100 MHz to 400 MHz (Top View) * SUPPLY VOLTAGE: VCC = 2.7 to 5.5 V * HIGH DENSITY SURFACE MOUNTING: 6 pin super mini mold package IN * LOW CARRIER LEAKAGE: Due to double balanced mixer * BUILT-IN POWER SAVE FUNCTION APPLICATION DESCRIPTION The UPC8106TB is a silicon RFIC designed as a frequency upconverter for cellular/cordless telephone transmitter stages and features improved intermodulation. This device is housed in a 6 pin super mini mold or SOT-363 package making it ideal for reducing system size. The UPC8106TB is manufactured using the 20 GHz fT NESATTM III silicon bipolar process. NT * CELLULAR/CORDLESS TELEPHONE SC O Stringent quality assurance and test procedures ensure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25C, VCC = VRFout = 3 V, fIFin = 240 MHz, PLOin = -5 dBm, VPS 2.7 V unless otherwise specified) PART NUMBER PACKAGE OUTLINE MIN TYP MAX ICC Circuit Current at VPS 2.7 V VPS = 0 V PARAMETERS AND CONDITIONS mA A 4.5 9 13.5 10 CG Conversion Gain at fRFout = 0.9 GHz, PIFin = -30 dBm fRFout = 1.9 GHz, PIFin = -30 dBm dB dB 6 4 9 7 12 10 PSAT Saturated Output Power at fRFout = 0.9 GHz, PIFin = 0 dBm fRFout = 1.9 GHz, PIFin = 0 dBm dBm dBm -4 -6.5 -2 -4 OIP3 Output Third-Order Intercept Point at fIFin1 = 240.0 MHz fIFin2 = 240.4 MHz fRFout = 0.9 GHz PIFin = -20 dBm fRFout = 1.9 GHz dBm dBm +5.5 +2.0 Third-Order Intermodulation Level at fIFin1 = 240 MHz fIFin2 = 240.4 MHz PIFin = -20 dBm dBc dBc -31 -30 DI SYMBOLS UPC8106TB S06 IM3 NF UNITS fRFout = 0.9 GHz fRFout = 1.9 GHz SSB Noise Figure, fRFout = 0.9 GHz dB 8.5 TPS(RISE) Power Save Rise Time at VPS: GNDVCC S 2.0 TPS(FALL) Power Save Fall Time at VPS: VCC GND S 2.0 UPC8106TB ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) RECOMMENDED OPERATING CONDITIONS SYMBOLS PARAMETERS UNITS RATINGS VCC Supply Voltage Pins 5 & 6 V 6.0 SYMBOLS VCC Supply Voltage TOP Operating Temperature PLO V 6.0 Total Power Dissipation2 mW 270 TOP Operating Temperature C -40 to +85 TSTG Storage Temperature C -55 to +150 dBm +10 PIN Input Power Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (TA = +85C). fRFout TYP MAX V 2.7 3.0 5.5 C -40 +25 +85 LO Input Level2 dBm -10 -5 RF Output Frequency3 GHz 0.4 2.0 IF Input Frequency MHz 100 400 fIFin Notes: 1. The same voltage should be supplied to pin 5 and 6. 2. ZS = 50 (without matching). 3. With external matching circuit. IN TYPICAL PERFORMANCE CURVES (TA = +25C, VCC = VRFout) CURRENT vs. VOLTAGE CURRENT vs. POWER SAVE VOLTAGE 12 14 VCC = 5.5 V 10 NT Cuurent, ICC (mA) 10 8 6 4 SC O No Signal VCC = VPS 0 1 2 3 4 6 4 5 6 7 0 8 1 2 3 4 5 CURRENT vs. TEMPERATURE CONVERSION GAIN vs. VOLTAGE 12 14 11 12 10 8 6 4 2 -60 0 Voltage, VCC (V) 16 0 VCC = 3.0 V Power Save Voltage, VPS (V) DI Cuurent, ICC (mA) 0 8 2 2 -40 -20 0 20 VCC = VPS = 3.0 V No Signal 40 60 Temperature, TA (C) 80 100 Conversion Gain, CG (dB) Cuurent, ICC (mA) 12 0 D Power Save Voltage PT MIN UNITS 1 UE VPS PARAMETERS 10 6 fRFout = 900 MHz 9 8 7 fRFout = 1.9 GHz 6 5 4 VCC = VPS 2 3 4 Voltage, VCC (V) 5 6 UPC8106TB TYPICAL PERFORMANCE CURVES (TA = +25C, VCC = VRFout) CONVERSION GAIN vs. LOCAL INPUT LEVEL 15 9 6 3 -25 -20 -15 -10 -5 0 5 10 15 0 POUT -20 -30 IM3 fRFout = 900 MHz fIFin1 = 240 MHz fIFin2 = 240.4 MHZ fLOin = 1440 MHz PLOin = -5 dBm VCC = VPS = 3.0 V -60 -70 -80 -40 -30 -20 -5 -25 -10 0 10 IF Input Level, PIFin (dBm) -10 -5 0 5 10 15 10 0 -10 POUT -20 -30 -40 IM3 -50 fRFout = 900 MHz fIFin1 = 240 MHz fIFin2 = 240.4 MHZ fLOin = 1440 MHz PLOin = -5 dBm VCC = VPS = 3.0 V -60 -70 -80 -40 -30 -20 -10 0 IF Input Level, PIFin (dBm) Local Leakage at RF Pin, LOrf (dBm) DI Local Leakage at IF Pin, LOif (dBm) -15 LOCAL LEAKAGE AT RF PIN vs. LOCAL INPUT FREQUENCY LOCAL LEAKAGE AT IF PIN vs. LOCAL INPUT FREQUENCY Local Input Frequency, fLOin (MHz) -20 RF OUTPUT LEVEL AND IM3 vs. IF INPUT LEVEL NT 10 -50 0 -10 SC O RF Output level of Each Tone PRFout, (dBm) Third Order Intermodulation Distortion, IM3 (dBm) RF OUTPUT LEVEL AND IM3 vs. IF INPUT LEVEL -40 5 Local Input Level, PLOin (dBm) Local Input Level, PLOin (dBm) -10 10 IN 0 fRFout = 1.9 GHz fLOin = 1.66 GHz VCC = VPS = 3.0 V UE Conversion Gain, CG (dB) 12 fRFout = 900 MHz fLOin = 1140 MHz VCC = VPS = 3.0 V RF Output level of Each Tone PRFout, (dBm) Third Order Intermodulation Distortion, IM3 (dBm) Conversion Gain, CG (dB) 15 D CONVERSION GAIN vs. LOCAL INPUT LEVEL Local Input Frequency, fLOin (MHz) 10 UPC8106TB TYPICAL PERFORMANCE CURVES (TA = +25C, VCC = VRFout) IF LEAKAGE AT RF PIN vs. IF INPUT FREQUENCY -10 D 0 POUT -20 -40 IM3 -50 fRFout = 1.9 GHz fIFin1 = 240 MHz fIFin2 = 240.4 MHZ fLOin = 1660 MHz PLOin = -5 dBm VCC = VPS = 3.0 V -60 -70 -80 -40 -30 -20 UE -30 -10 0 IF Input Frequency, fIFin (MHz) 10 IN IF Leakage at RF Pin, IFrf (dBm) 10 LO port S11 Z REF 1.0 Units 2 200.0 mUnits/ 21.201 -53.748 hp RF port MARKER 1 900 MHz MARKER 2 1.9 GHz SC O MARKER 1 1.15 GHz MARKER 2 1.65 GHz NT S-PARAMETERS FOR EACH PORT (VCC = VPS = VRFout = 3.0 V ) DI START 0.4 GHz STOP 1.9 GHz S22 Z REF 1.0 Units 2 200.0 mUnits/ 26.961 -87.312 hp START 0.4 GHz STOP 1.9 GHz UPC8106TB S-PARAMETERS FOR EACH PORT (VCC = VPS = VRFout = 3.0 V ) D START 0.1 GHz UE MARKER 1 240 MHz S11 Z REF 1.0 Units 1 200.0 mUnits/ 194.16 -579.53 hp STOP 0.4 GHz IN IF port S-PARAMETERS FOR MATCHED RF OUTPUT (VCC = VPS = VRFout = 3.0 V ) - with TEST CIRCUITS 1 and 2 - (S22 data is monitored at RF connector on board.) 1.9 GHz (LC-matched) in test circuit S22 log MAG REF 0.0 dB 1 10.0 dB/ -15.213 dB hp NT 900 MHz (LC-matched) in test circuit S11 log MAG REF 0.0 dB 1 10.0 dB/ -19.567 dB hp SC O MARKER 1 1.9 GHz START 100 MHz STOP 3000 MHz DI S22 REF 1.0 Units 1 200.0 mUnits/ 36.59 2.9355 hp 1> 1 START 100 MHz STOP 3000 MHz S22 REF 1.0 Units 1 200.0 mUnits/ 58.191 -4.1191 hp 1 MARKER 1 1.9 GHz START 100 MHz STOP 3000 MHz START 100 MHz STOP 3000 MHz UPC8106TB PIN FUNCTIONS Symbol Supply Voltage (V) 1 IF Input - 2 GND 0 3 LOIN - 5 VCC 2.7 to 5.5 - RF Output 2.7 to 3.6 - 4 VPS VCC/GND Description Equivalent Circuit 1.3 This pin is the IF input to the double balanced mixer. The input is a high impedance. GND pin. Ground pattern on the board should be as wide as possible. Trace length should be kept as short as possible to minimize ground impedance. 3 2.4 LO input pin. Recommended input level is -10 to 0 dBm. Supply voltage pin. This pin is the RF output. This pin is designed as an open collector. Due to the high impedance output, this pin requires an external LC matching circuit. - Power save control pin. Bias controls operation as follows: Control ON Power Save NT Pin Bias VCC GND SC O Note: 1. Each pin voltage is measured with VCC = VPS = VRFout = 3.0 V DI 5 UE - IN 6 Pin1 Voltage (V) D Pin No. 6 1 2 UPC8106TB SYSTEM APPLICATION EXAMPLE DI SC O NT UPC8106TB IN UE D EXAMPLE OF DECT 900 MHz Cordless Phone UPC8106TB TEST CIRCUIT 1 (RFOUT = 900 MHz) 100 pF 3 LOin VPS 2 GND VCC 1 IFin 4 Note 1 1000 pF 0.1 F UE 100 pF D (Top View) 5 RFout 6 10 nH 1000 pF 1.0 pF 1000 pF 0.1 F IN 900 MHz Match NT Note: 1. In case of unstable operation, connect 100 pF capacitor between pins 4 and 5. TEST CIRCUIT 2 (RFOUT = 1.9 GHz) SC O (Top View) 100 pF DI 100 pF 3 LOin VPS 4 2 GND VCC 5 1 IFin RFout 6 Note: 1. In case of unstable operation, connect 100 pF capacitor between pins 4 and 5. Note 1 1000 pF 0.1 F 100 nH 1000 pF 0.1 F TL = 5 nH 2.2 pF 1.9 GHz Match 1000 pF UPC8106TB OUTLINE DIMENSIONS (Units in mm) LEAD CONNECTIONS (Top View) ORDERING INFORMATION QTY UPC8106TB-E3-A 3K/Reel NT PART NUMBER UE Note: All dimensions are typical unless otherwise specified. IF INPUT GND LO INPUT POWER SAVE VCC RF OUTPUT IN 1. 2. 3. 4. 5. 6. (Bottom View) D PACKAGE OUTLINE S06 DI SC O Note: Embossed Tape, 8 mm wide, Pins 1, 2, and 3 face tape perforation side. NOTICE 5. 6. 7. 8. 9. 10. 11. 12. D UE 4. IN 3. NT 2. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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