Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150CY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
UPS, CVCF
QM150CY-H
•ICCollector current ........................ 150A
•VCEX Collector-emitter voltage ........... 600V
•hFE DC current gain...............................75
•Insulated Type
•UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
95
21.5
30
LABEL
Tab#110, t=0.5
80
66
23 23 23.5 φ5.5
B
2
E
2
E
1
B
1
12
66
12
C
1
E
2
E
1
C
2
B
2
X
B
1
X
48
62
M5
30
7
21
B
2
X
C
2
B
1
X
E
2
E
1
B
2
E
2
E
1
B
1
C
1
http://store.iiic.cc/
Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Limits
Min.
—
—
—
—
—
—
75/100
—
—
—
—
—
—
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
IC=1A, VEB=2V
VEB=2V
Emitter open
Collector open
DC
DC (forward diode current)
TC=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M5
Mounting screw M5
Typical value
Ratings
600
600
600
7
150
150
690
9
1500
–40~+150
–40~+125
2500
1.47~1.96
15~20
1.47~1.96
15~20
420
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Symbol
ICEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
VCE=600V, VEB=2V
VCB=600V, Emitter open
VEB=7V
IC=150A, IB=2A
–IC=150A (diode forward voltage)
IC=150A, VCE=2V/5V
VCC=300V, IC=150A, IB1=–IB2=3A
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
2.0
150
2.0
2.5
1.85
—
2.5
12
3.0
0.18
0.6
0.1
MITSUBISHI TRANSISTOR MODULES
QM150CY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
http://store.iiic.cc/
Feb.1999
2
10
1
10
0
10
3
10
2
10
0
10 1
10
–1
10
0
10 1
10 2
10
–1
10
–1
10
–1
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
1.0 3.02.62.21.81.4
Tj=25°C
VCE=2.0V
1
10
7
5
4
3
2
0
10
7
5
4
3
2
23457 1
10 23457 2
10
Tj=25°C
Tj=125°C
IB=2A
VBE(sat)
VCE(sat)
2
300
240
180
120
60
001 2 3 4 5
Tj=25°C
IB=1.0A
IB=0.1A
IB=0.5A
IB=2.0A
IB=3.0A
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
2
10 3
10
1
10
0
10
3
10
2
10
1
10
0
10
444
Tj=25°C
Tj=125°C
VCE=5.0V
VCE=2.0V
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
ton
Tj=25°C
Tj=125°C
IB1=–IB2=3A
VCC=300V
tf
ts
75327532
5
4
3
2
1
0
44
32 475
I
C
=200A
I
C
=50A
Tj=25°C
Tj=125°C
I
C
=150A
I
C
=100A
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
BASE CURRENT IB (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)SWITCHING TIME ton, ts, tf (µs)
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
BASE CURRENT IB (A) COLLECTOR CURRENT IC (A)
MITSUBISHI TRANSISTOR MODULES
QM150CY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
http://store.iiic.cc/
Feb.1999
3
10
2
10
1
10
0
10
–1
10
–2
10
–3
10
753275327532
0.2
0.16
0.12
0.08
0.04
0
7532
1
10
0
10
0
10
444
423
3
10
2
10
1
10
0
10
0
10
3
10
2
10
1
10
–1
10
100
80
60
40
20
00 20 60 100 120 16040 80 140
10
30
50
70
90
1
10
7
5
4
3
2
0
10
7
5
4
3
2
23457
0
10
23457
1
10
2
t
s
t
f
T
j
=25°C
T
j
=125°C
V
CC
=300V
I
B1
=3A
I
C
=150A
400
00 200 400 600 800
300
200
100
I
B2
=–5A
T
j
=125°C
I
B2
=–2A
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
t
w
=50µ
S
100µ
S
500µ
S
DC
1m
S
10m
S
T
C
=25°C
NON–REPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
0 0.4 0.8 1.2 1.6 2.0
7
5
3
2
7
5
3
2
7
5
3
2T
j
=25°C
T
j
=125°C
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME ts, tf (µs)
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
TIME (s)
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –IC (A)
MITSUBISHI TRANSISTOR MODULES
QM150CY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
Zth (j–c) (°C/ W)
http://store.iiic.cc/
Feb.1999
1
10 7532
0
10 75432
0
200
600
1000
1400
1600
2
10 4
800
400
1200
753275327532
1.0
0.8
0.6
0.4
0.2
0
7532
1
10
0
10
0
10
–3
10
–2
10
–1
10
444
42534
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
3
10
2
10
1
10
0
10
0
10
1
10
2
10
3
10
–1
10
0
10
1
10
2
10
I
rr
t
rr
T
j
=25°C
T
j
=125°C
V
CC
=300V
I
B1
=–I
B2
=3.0A
Q
rr
Zth (j–c) (°C/ W)
Irr (A), Qrr (µc)
SURGE COLLECTOR REVERSE CURRENT
–ICSM (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM150CY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
trr (µs)
http://store.iiic.cc/
