MITSUBISHI TRANSISTOR MODULES QM150CY-H HIGH POWER SWITCHING USE INSULATED TYPE QM150CY-H * * * * * IC Collector current ........................ 150A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION UPS, CVCF OUTLINE DRAWING & CIRCUIT DIAGRAM 95 80 23 E2E1 23.5 C1 B2 E2 62 48 30 C2 E1 B1 B2 E2 5.5 C2 E 2 E1 C1 B1X 12 B1X B2X 6 23 6 12 6 21.5 6 B2X Dimensions in mm E1 B1 M5 LABEL 21 30 7 Tab#110, t=0.5 Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM150CY-H HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open IC Collector current -IC PC Parameter Conditions 7 V DC 150 A Collector reverse current DC (forward diode current) 150 A Collector dissipation TC=25C 690 W IB Base current DC 9 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 1500 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Charged part to case, AC for 1 minute Main terminal screw M5 -- Mounting torque Mounting screw M5 -- Typical value Weight ELECTRICAL CHARACTERISTICS 2500 V 1.47~1.96 N*m 15~20 kg*cm 1.47~1.96 N*m 15~20 kg*cm 420 g (Tj=25C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V -- -- 2.0 mA ICBO Collector cutoff current VCB=600V, Emitter open -- -- 2.0 mA IEBO Emitter cutoff current VEB=7V -- -- 150 mA VCE (sat) Collector-emitter saturation voltage -- -- 2.0 V VBE (sat) Base-emitter saturation voltage -- -- 2.5 V -VCEO Collector-emitter reverse voltage -IC=150A (diode forward voltage) -- -- 1.85 V hFE DC current gain IC=150A, VCE=2V/5V 75/100 -- -- -- -- -- 2.5 s Switching time VCC=300V, IC=150A, IB1=-IB2=3A -- -- 12 s -- -- 3.0 s Transistor part (per 1/2 module) -- -- 0.18 C/ W Diode part (per 1/2 module) -- -- 0.6 C/ W Conductive grease applied (per 1/2 module) -- -- 0.1 C/ W IC=150A, IB=2A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM150CY-H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) Tj=25C DC CURRENT GAIN hFE IB=3.0A 240 IB=2.0A IB=1.0A 180 IB=0.5A 120 60 0 IB=0.1A 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) 10 1 7 5 4 3 2 VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) VCE=2.0V Tj=25C 10 0 7 5 4 3 2 10 -1 1.0 1.4 1.8 2.2 BASE-EMITTER VOLTAGE 2.6 3.0 10 3 7 5 3 2 7 5 3 2 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 VBE(sat) 10 0 7 5 4 3 2 10 -1 VCE(sat) IB=2A Tj=25C Tj=125C 2 3 4 5 7 10 1 2 IC=200A 1 IC=50A IC=100A IC=150A 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) 3 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 4 Tj=25C Tj=125C 10 1 VBE (V) Tj=25C Tj=125C VCE=2.0V 10 2 7 5 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 5 VCE=5.0V COLLECTOR CURRENT IC (A) SATURATION VOLTAGE COLLECTOR CURRENT IC (A) 300 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 0 10 -1 2 3 4 5 710 0 2 3 4 5 7 10 1 2 3 45 7 10 2 BASE CURRENT IB (A) 10 2 7 5 3 2 10 1 7 5 3 2 ts VCC=300V IB1=-IB2=3A Tj=25C Tj=125C 10 0 ton tf 7 5 3 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM150CY-H HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA 2 400 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (s) Tj=125C 10 1 7 5 4 3 2 ts tf 10 0 VCC=300V 7 IC=150A 5 IB1=3A 4 Tj=25C 3 Tj=125C 2 10 -1 2 3 4 5 7 10 0 300 IB2=-2A 200 100 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT -IB2 (A) 600 800 COLLECTOR-EMITTER VOLTAGE VCE (V) S 10 1 7 5 3 TC=25C 2 NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE 0.16 Zth (j-c) (C/ W) SECOND BREAKDOWN AREA 80 70 60 COLLECTOR DISSIPATION 50 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 3 0.2 0.12 0.08 0.04 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 400 90 DERATING FACTOR (%) S 200 100 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) m 10 10 2 7 5 3 2 50 0 1m S 0 DERATING FACTOR OF F. B. S. O. A. tw=50S 100S DC COLLECTOR CURRENT IC (A) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 IB2=-5A TIME (s) TC (C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 3 10 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 Tj=25C Tj=125C 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM150CY-H HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 1600 1400 Irr (A), Qrr (c) 1200 1000 800 600 400 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 3 10 2 7 VCC=300V 5 IB1=-IB2=3.0A 3 Tj=25C 2 Tj=125C 10 2 10 1 7 5 3 2 Qrr Irr 10 1 10 0 7 5 3 trr 2 0 10 -1 10 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 trr (s) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 1.0 Zth (j-c) (C/ W) 0.8 0.6 0.4 0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 http://store.iiic.cc/