Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
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▼ Lower Gate Charge BVDSS 30V
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▼ Simple Drive Requirement RDS(ON) 80mΩ
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▼ Fast Switching Characteristic ID12A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 10 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W
Data & specifications subject to change without notice
AP15T03GH/J
Parameter Rating
Pb Free Plating Product
Drain-Source Voltage 30
Gate-Source Voltage ±20
Continuous Drain Current 12
Continuous Drain Current 6.4
Pulsed Drain Current150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.1
Storage Temperature Range
Total Power Dissipation 12.5
-55 to 150
200601041
Thermal Data
Parameter
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP15T03GJ) is available for low-profile applications.
GDSTO-251(J)
GDSTO-252(H)
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=8A - - 80 mΩ
VGS=4.5V, ID=5A - - 100 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=8A - 7 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=150oC) VDS=24V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=±20V - - ±100 nA
QgTotal Gate Charge2ID=8A - 4 7 nC
Qgs Gate-Source Charge VDS=24V - 1.4 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 2.4 - nC
td(on) Turn-on Delay Time2VDS=15V - 6 - ns
trRise Time ID=8A - 22 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 11 - ns
tfFall Time RD=1.88Ω- 2.4 - ns
Ciss Input Capacitance VGS=0V - 280 450 pF
Coss Output Capacitance VDS=25V - 70 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 47 - pF
RgGate Resistance f=1.0MHz - 1.1 - Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=8A, VGS=0V - - 1.3 V
trr Reverse Recovery Time2IS=8A, VGS=0V, - 17 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 7 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP15T03GH/J
AP15T03GH/J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
0
5
10
15
20
25
30
35
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
7.0V
5.0V
4.5V
VG=3.0V
0
3
6
9
12
15
18
21
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC 10V
7.0V
5.0V
4.5V
VG=3.0V
0.6
0.8
1.0
1.2
1.4
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=8A
VG=10V
0
2
4
6
8
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
40
46
52
58
64
70
76
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
Ω
Ω
Ω
)
I
D=5A
TC=25oC
0.0
0.5
1.0
1.5
2.0
-50 0 50 100 150
Tj ,Junction Temperature ( oC)
Normalized VGS(th) (V)
AP15T03GH/J
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS QGD
QG
Charge
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Thermal Response (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
2
4
6
8
10
12
14
0246810
QG , Total Gate Charge (nC)
VGS , Gate to Source Voltage (V)
VDS =16 V
VDS =20V
VDS =24V
ID=8A
10
100
1000
1 5 9 1317212529
VDS ,Drain-to-Source Voltage (V)
C (pF)
f
=1.0MHz
Ciss
Coss
Crss
0.1
1
10
100
0.1 1 10 100
VDS ,Drain-to-Source Voltage (V)
ID (A)
Tc=25 oC
S
ingle Pulse
100us
1ms
10ms
100ms
DC
