AP15T03GH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D Simple Drive Requirement BVDSS 30V RDS(ON) 80m ID Fast Switching Characteristic G 12A S Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP15T03GJ) is available for low-profile applications. G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V ID@TC=25 Continuous Drain Current 12 A ID@TC=100 Continuous Drain Current 6.4 A 50 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation 12.5 W Linear Derating Factor 0.1 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Units Rthj-c Thermal Resistance Junction-case Max. 10 /W Rthj-a Thermal Resistance Junction-ambient Max. 110 /W Data & specifications subject to change without notice 200601041 AP15T03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 30 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.02 - V/ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=8A - - 80 m VGS=4.5V, ID=5A - - 100 m VDS=VGS, ID=250uA 1 - 3 V VDS=10V, ID=8A - 7 - S VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150 C) VDS=24V, VGS=0V - - 25 uA Gate-Source Leakage VGS=20V - - 100 nA ID=8A - 4 7 nC VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS o Drain-Source Leakage Current (Tj=25 C) o IGSS 2 VGS=0V, ID=250uA Qg Total Gate Charge Qgs Gate-Source Charge VDS=24V - 1.4 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 2.4 - nC VDS=15V - 6 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=8A - 22 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 11 - ns tf Fall Time RD=1.88 - 2.4 - ns Ciss Input Capacitance VGS=0V - 280 450 pF Coss Output Capacitance VDS=25V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 47 - pF Rg Gate Resistance f=1.0MHz - 1.1 - Min. Typ. IS=8A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=8A, VGS=0V, - 17 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 7 - nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP15T03GH/J 35 21 o TC=25 C 30 10V 7.0V 5.0V 15 20 ID , Drain Current (A) ID , Drain Current (A) 25 5.0V 15 4.5V 10 5 12 4.5V 9 6 3 V G =3.0V V G =3.0V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 76 1.6 I D =8A V G =10V Normalized R DS(ON) ID=5A 70 o T C =25 C RDS(ON) (m ) 10V 7.0V T C =150 o C 18 64 58 1.4 1.2 1.0 52 0.8 46 0.6 40 2 4 6 8 10 -50 100 150 T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 8 2.0 6 1.5 Normalized VGS(th) (V) IS(A) 50 o V GS , Gate-to-Source Voltage (V) T j =150 o C 0 T j =25 o C 4 1.0 0.5 2 0.0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 o T j ,Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 AP15T03GH/J f=1.0MHz 14 1000 ID=8A VGS , Gate to Source Voltage (V) 12 V DS =1 6 V V DS =20V V DS =24V 10 C iss C (pF) 8 6 100 C oss C rss 4 2 10 0 0 2 4 6 8 1 10 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 100 100us ID (A) 10 1ms 10ms 100ms DC 1 T c =25 o C Single Pulse 0.1 Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 PDM t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.01 0.1 1 10 100 0.00001 0.0001 V DS ,Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Fig 12. Gate Charge Waveform Q