Single N-channel Trench MOSFET 100V, 10.8A, 140m Features General Description The MDD1904 uses advanced MagnaChip's MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1904 is suitable device for DC to DC converter and general purpose applications. VDS = 100V ID = 10.8A @VGS = 10V RDS(ON) (MAX) < 140m @VGS = 10V < 150m @VGS = 6.0V D G S Absolute Maximum Ratings (Tc = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 100 V 20 V VGSS TC=25oC Continuous Drain Current (1) TC=70oC Pulsed Drain Current 10.8 ID IDM TC=25oC Power Dissipation TC=70oC Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range PD A 8.7 25 A 35.8 W 22.9 EAS 12.5 TJ, Tstg -55~150 Symbol Rating mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Apr. 2012. Version 1.0 1 RJA 52 RJC 3.5 Unit o C/W MagnaChip Semiconductor Ltd. MDD1904 - Single N-Channel Trench MOSFET 100V MDD1904 Part Number Temp. Range MDD1904RH o -55~150 C Package Packing Rohs Status D-PAK Tape & Reel Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 100 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.0 2.0 3.0 Drain Cut-Off Current IDSS VDS = 80V, VGS = 0V - - 1 Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1 VGS = 10V, ID = 8.0A - 116 140 VGS = 6.0V, ID = 8.0A - 124 150 VDS = 10V, ID = 8.0A - 13.5 - - 6.7 - - 1.3 - - 1.8 - - 355 - Drain-Source ON Resistance Forward Transconductance RDS(ON) gfs V A m S Dynamic Characteristics Total Gate Charge Qg(10V) Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 50.0V, ID = 8.0A, VGS = 10V VDS = 25.0V, VGS = 0V, f = 1.0MHz nC Reverse Transfer Capacitance Crss - 16 - Output Capacitance Coss - 51 - Turn-On Delay Time td(on) - 6.7 - - 3.6 - - 13.7 - - 3.3 - - 0.75 1.2 V - 36.5 - Ns - 58.5 - nC Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 10V, VDS = 50V, ID = 8.0A , RG = 3.0 tf pF Ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 8.0A, VGS = 0V IF = 8.0A, dl/dt = 100A/s Note : 1. 2. Surface mounted FR-4 board by JEDEC (jesd51-7) EAS is tested at starting Tj = 25 , L = 1.0mH, IAS = 5.0A, VDD = 50V, VGS = 10V Apr. 2012. Version 1.0 2 MagnaChip Semiconductor Ltd. MDD1904 - Single N-Channel Trench MOSFET 100V Ordering Information VGS = 10V ID, Drain Current [A] 20 Drain-Source On-Resistance [m] 220 8.0V 5.0V 15 4.5V 10 4.0V 5 210 200 190 180 170 160 VGS = 6.0V 150 140 VGS = 10V 130 120 110 100 3.5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 90 3.5 4.0 4.5 80 5.0 0 5 10 VDS, Drain-Source Voltage [V] 20 25 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 300 2.4 Notes : Notes : 2.2 1. VGS = 10 V 2. ID = 8.0 A 2.0 RDS(ON) [m ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 15 ID, Drain Current [A] 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 8.0A 250 200 150 TJ = 25 100 50 0.4 0.2 -50 0 -25 0 25 50 75 100 125 2 150 3 4 5 6 7 8 9 10 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 20 Notes : Notes : VGS = 0V IDR, Reverse Drain Current [A] ID, Drain Current [A] VDS = 10V 15 TJ=25 10 5 0 0 1 2 3 4 5 6 7 TJ=25 0 10 0.3 8 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD, Source-Drain voltage [V] VGS, Gate-Source Voltage [V] Fig.5 Transfer Characteristics Apr. 2012. Version 1.0 1 10 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDD1904 - Single N-Channel Trench MOSFET 100V 25 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Note : ID = 8.0A VDS = 50V Capacitance [pF] VGS, Gate-Source Voltage [V] 8 6 4 Ciss 400 200 Notes ; 1. VGS = 0 V 2. f = 1 MHz Coss 2 Crss 0 0 2 4 6 0 8 0 5 10 QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics ID, Drain Current [A] 30 12 1 ms 10 1 10 ms 100 ms 10 25 2 Operation in This Area is Limited by R DS(on) 10 20 Fig.8 Capacitance Characteristics ID, Drain Current [A] 10 15 VDS, Drain-Source Voltage [V] 0 1s 10s DC Single Pulse TJ=Max rated TC=25 8 6 4 2 10 -1 10 -1 10 0 10 1 10 0 25 2 50 75 100 125 150 TC, Case Temperature [ ] VDS, Drain-Source Voltage [V] Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 10 0.2 10 0.1 0.05 0.02 -1 10 0.01 Z JC , Thermal Response D=0.5 0 -2 single pulse 10 Notes : Duty Factor, D=t 1/t2 PEAK TJ = PDM * Z JC* R JC(t) + TC -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Apr. 2012. Version 1.0 4 MagnaChip Semiconductor Ltd. MDD1904 - Single N-Channel Trench MOSFET 100V 600 10 MDD1904 - Single N-Channel Trench MOSFET 100V Package Dimension D-PAK (TO-252) Dimensions are in millimeters, unless otherwise specified Apr. 2012. Version 1.0 5 MagnaChip Semiconductor Ltd. MDD1904 - Single N-Channel Trench MOSFET 100V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Apr. 2012. Version 1.0 6 MagnaChip Semiconductor Ltd.