GT25Q102(Q) - TOSHIBA - Product.Network

GT25Q102

2006-11-01

1

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT25Q102

High Power Switching Applications

• Third-generation IGBT

• Enhancement mode type

• High speed: tf = 0.32 μs (max)

• Low saturation voltage: VCE (sat) = 2.7 V (max)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Collector-emitter voltage VCES 1200 V

Gate-emitter voltage VGES ±20 V

DC IC 25

Collector current

1 ms ICP 50

A

Collector power dissipation

(Tc = 25°C) PC 200 W

Junction temperature Tj 150 °C

Storage temperature range Tstg −55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Marking

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-21F2C

Weight: 9.75 g (typ.)

GT25Q102

TOSHIBA

JAPAN

Lot No.

A

line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Part No. (or abbreviation code)

GT25Q102

2006-11-01

2

Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGES V

GE = ±20 V, VCE = 0 ⎯ ⎯ ±500 nA

Collector cut-off current ICES V

CE = 1200 V, VGE = 0 ⎯ ⎯ 1.0 mA

Gate-emitter cut-off voltage VGE (OFF) I

C = 2.5 mA, VCE = 5 V 4.0 ⎯ 7.0 V

Collector-emitter saturation voltage VCE (sat) I

C = 25 A, VGE = 15 V ⎯ 2.1 2.7 V

Input capacitance Cies V

CE = 50 V, VGE = 0, f = 1 MHz ⎯ 1360 ⎯ pF

Rise time tr ⎯ 0.10 ⎯

Turn-on time ton ⎯ 0.30 ⎯

Fall time tf ⎯ 0.16 0.32

Switching time

Turn-off time toff

Inductive Load

VCC = 600 V, IC = 25 A

VGG = ±15 V, RG = 43 Ω

(Note1)

⎯ 0.68 ⎯

μs

Thermal resistance Rth (j-c) ⎯ ⎯ ⎯ 0.625 °C/W

Note1: Switching time measurement circuit and input/output waveforms

Note2: Switching loss measurement waveforms

GT25Q301

RG

IC

VCE

L VCC

−VGE

10%

90%

VGE

VCE

IC

td (off)

toff

td (on) t

r

ton

0

tf

10%10% 10%

90%

10%

90%

10%

90%

VGE

VCE

IC

Eoff E

on

0

0 10%

GT25Q102

2006-11-01

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Collector current IC (A)

Collector-emitter voltage VCE (V)

IC – VCE

Collector current IC (A)

Gate-emitter voltage VGE (V)

VCE – VGE

Collector-emitter voltage VCE (V)

Gate-emitter voltage VGE (V)

VCE – VGE

Collector-emitter voltage VCE (V)

Gate-emitter voltage VGE (V)

VCE – VGE

Gate-emitter voltage VGE (V)

IC – VGE

Case temperature Tc (°C)

VCE (sat) – Tc

Collector-emitter saturation voltage

VCE (sat) (V)

50

40

30

20

10

0

0 1 2 3 4 5

VGE = 9 V

Common emitter

Tc = 25°C

10

15 20

0 4 8 12 16 20

12

0

4

8

16

20

Common emitter

Tc = −40°C

50

25

IC = 10 A

20

16

12

8

4

0

0 4 8 12 16 20

Common emitter

Tc = 25°C

25

50

IC = 10 A

0 4 8 12 16 20

12

0

4

8

16

20

Common emitter

Tc = 125°C

25

50

IC = 10 A

50

40

30

20

10

0

0 4 8 12 16 20

Tc = 125°C

Common emitter

VCE = 5 V

25

−40

4

3

2

1

0

−60 −20 20 60 100 140

Common

emitter

VGE = 15 V

25

50

IC = 10 A

GT25Q102

2006-11-01

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Gate resistance RG (Ω)

Switching time ton, tr – RG

Switching time ton, tr (μs)

Gate resistance RG (Ω)

Switching time toff, tf – RG

Switching time toff, tf (μs)

Gate resistance RG (Ω)

Switching loss Eon, Eoff – RG

Switching loss Eon, Eoff (mJ)

Collector current IC (A)

Switching time ton, tr – IC

Switching time ton, tr (μs)

Collector current IC (A)

Switching time toff, tf – IC

Switching time toff, tf (μs)

Collector current IC (A)

Switching loss Eon, Eoff – IC

Switching loss Eon, Eoff (mJ)

0.3

0.5

1

3

0.1

ton

tr

Common emitter

VCC = 600 V

VGG = ±15 V

IC = 25 A

: Tc = 25°C

: Tc = 125°C

5 10 30 50 100 3 500

0.05 300 5 10

0

0.3

0.1

0.01

0.03

1

15 20 25 30

Common emitter

VCC = 600 V

VGG = ±15 V

RG = 43 Ω

: Tc = 25°C

: Tc = 125°C

tr

ton

0.5

0.05

5 10

0

0.3

0.1

0.01

0.03

1

15 20 25 30

Common emitter

VCC = 600 V

VGG = ±15 V

RG = 43 Ω

: Tc = 25°C

: Tc = 125°C

tf

toff

0.5

0.05

0.3

0.5

1

0.1

tf

toff

Common emitter

VCC = 600 V

VGG = ±15 V

IC = 25 A

: Tc = 25°C

: Tc = 125°C

5 10 30 50 100 3 500 300

3

0.5

3

5

10

30

1

5 10 30 50 100 3 500 300

Eoff

Eon

Common emitter

VCC = 600 V

VGG = ±15 V

IC = 25 A

: Tc = 25°C

: Tc = 125°C

Note2

5 10

0

3

1

0.1

0.3

10

15 20 25 30

Common emitter

VCC = 600 V

VGG = ±15 V

RG = 43 Ω

: Tc = 25°C

: Tc = 125°C

Note2

Eoff

Eon

5

0.5

GT25Q102

2006-11-01

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Transient thermal impedance

Rth (t) (°C/W)

Collector current IC (A)

Gate-emitter voltage VGE (V)

Gate charge QG (nC)

VCE, VGE – QG

Collector-emitter voltage VCE (V)

Safe operating area

Collector current IC (A)

Collector-emitter voltage VCE (V)

Reverse bias SOA

Pulse width tw (s)

Rth (t) – tw

Capacitance C (pF)

Collector-emitter voltage VCE (V)

C – VCE

0.3 1 0.1

300

100

10

30

1000

3000

10000

3 10 30 300 1000

Common emitter

VGE = 0

f = 1 MHz

Tc = 25°C

Cies

Coes

Cres

100

Common emitter

RL = 12 Ω

Tc = 25°C

0

40 80 120 160 200

0

4

8

12

16

20

200

400

600

800

1000

VCE = 200 V

600

400

0.3

1 3 10

0.5

1

3

5

10

30

30 100 300 30001000

0.1

100

50

Tj

<

=

125°C

VGE = ±15 V

RG = 43 Ω

0.3

1 3 10

0.5

1

3

5

10

30

30 100 300 30001000

0.1

100

50

*: Single nonrepetitive

pulse

Tc = 25°C

Curves must be derated

linearly with increase in

temperature.

IC max (pulsed)*

IC max

(continuous)

DC

operation

1 ms*

100 μs*

50 μs*

10 ms*

10−3

102

10−5 10−4 10−3 10−2 10−1 100 101 102

10−2

10−1

100

101

10−4

Tc = 25°C

GT25Q102

2006-11-01

6

RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his

document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which

manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which

may result from its use. No license is granted by implication or otherwise under any patents or other rights of

TOSHIBA or the third parties.

• Please contact your sales representative for product-by-product details in this document regarding RoHS

compatibility. Please use these products in this document in compliance with all applicable laws and regulations

that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses

occurring as a result of noncompliance with applicable laws and regulations.