PESD24VS2UQ,115 - NEXPERIA - Product.Network

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1. Product profile

1.1 General description

Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a SOT663 ultra

small and flat lead Surface-Mounted Device (SMD) plastic package designed to protect

up to two signal lines from the damage caused by ESD and other transient s.

1.2 Features

1.3 Applications

1.4 Quick reference data

PESDxS2UQ series

Double ESD protection diodes in SOT663 package

Rev. 04 — 26 January 2010 Product data sheet

Unidirectional ESD protection of up to

two lines

ESD protection up to 30 kV

Max. peak pulse power: PPP =150W

at tp=8/20μs

IEC 61000-4-2; level 4 (ESD)

Low clamping voltage: VCL =20V

at IPP =15A

IEC 61000-4-5 (surge); IPP =15A

at tp=8/20μs

Low reverse leakage current: IRM <1nA

Computers and peripherals High-speed data lines

Audio and video equipment Parallel ports

Communication systems

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VRWM reverse standoff voltage

PESD3V3S2UQ - - 3.3 V

PESD5V0S2UQ - - 5 V

PESD12VS2UQ - - 12 V

PESD15VS2UQ - - 15 V

PESD24VS2UQ - - 24 V

Cddiode capacitance f = 1 MHz; VR=0V

PESD3V3S2UQ - 200 275 pF

PESD5V0S2UQ - 150 215 pF

PESD12VS2UQ - 38 100 pF

PESD15VS2UQ - 32 70 pF

PESD24VS2UQ - 23 50 pF

Product data sheet Rev. 04 — 26 January 2010 2 of 13

NXP Semiconductors PESDxS2UQ series

Double ESD protection diodes in SOT663 package

2. Pinning information

3. Ordering information

4. Marking

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode 1

2 cathode 2

3 common anode

006aaa15

Table 3. Ordering i nformation

Type number Package

Name Description Version

PESD3V3S2UQ - plastic surface-mounted package; 3 leads SOT663

PESD5V0S2UQ

PESD12VS2UQ

PESD15VS2UQ

PESD24VS2UQ

Table 4. Marking codes

Type number Marking code

PESD3V3S2UQ E1

PESD5V0S2UQ E2

PESD12VS2UQ E3

PESD15VS2UQ E4

PESD24VS2UQ E5

Product data sheet Rev. 04 — 26 January 2010 3 of 13

NXP Semiconductors PESDxS2UQ series

Double ESD protection diodes in SOT663 package

5. Limiting values

[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.

[2] Measured across either pins 1 and 3 or pins 2 and 3.

[1] Device stressed with ten non-repetitive ESD pulses.

[2] Measured across either pins 1 and 3 or pins 2 and 3.

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

PPP peak pulse power tp=8/20μs[1][2] -150W

IPP peak pulse current tp=8/20μs[1][2]

PESD3V3S2UQ - 15 A

PESD5V0S2UQ - 15 A

PESD12VS2UQ - 5 A

PESD15VS2UQ - 5 A

PESD24VS2UQ - 3 A

Per device

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

Table 6. ESD maximum ratings

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Max Unit

Per diode

VESD electrostatic discharge

voltage IEC 61000-4-2

(contact discharge) [1][2]

PESD3V3S2UQ - 30 kV

PESD5V0S2UQ - 30 kV

PESD12VS2UQ - 30 kV

PESD15VS2UQ - 30 kV

PESD24VS2UQ - 23 kV

PESDxS2UQ series MIL-STD-883

(human body model) -10kV

Table 7. ESD standards compliance

Standard Conditions

Per diode

IEC 61000-4-2; level 4 (ESD) > 15 kV (ai r); > 8 kV (contact)

MIL-STD-883; class 3 (human body model) > 4 kV

Product data sheet Rev. 04 — 26 January 2010 4 of 13

NXP Semiconductors PESDxS2UQ series

Double ESD protection diodes in SOT663 package

6. Characteristics

Fig 1. 8/20 μs pulse wavefo r m ac c or ding to

IEC 61000-4-5 Fig 2. ESD pulse waveform according to

IEC 61000-4-2

t (μs)

0403010 20

001aaa630

120

IPP

(%)

e−t

100 % IPP; 8 μs

50 % IPP; 20 μs

001aaa63

100 %

90 %

30 ns

60 ns

10 %

= 0.7 ns to 1 ns

Table 8. Characteristics

Tj=25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

VRWM reverse standoff

voltage

PESD3V3S2UQ - - 3.3 V

PESD5V0S2UQ - - 5 V

PESD12VS2UQ - - 12 V

PESD15VS2UQ - - 15 V

PESD24VS2UQ - - 24 V

IRM reverse leakage current

PESD3V3S2UQ VRWM = 3.3 V - 0.55 3 μA

PESD5V0S2UQ VRWM = 5 V - 50 300 nA

PESD12VS2UQ VRWM =12V - <1 30 nA

PESD15VS2UQ VRWM =15V - <1 50 nA

PESD24VS2UQ VRWM =24V - <1 50 nA

VBR breakdown voltage IR=5mA

PESD3V3S2UQ 5.2 5.6 6.0 V

PESD5V0S2UQ 6.4 6.8 7.2 V

PESD12VS2UQ 14.7 15.0 15.3 V

PESD15VS2UQ 17.6 18.0 18.4 V

PESD24VS2UQ 26.5 27.0 27.5 V

Product data sheet Rev. 04 — 26 January 2010 5 of 13

NXP Semiconductors PESDxS2UQ series

Double ESD protection diodes in SOT663 package

[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.

[2] Measured across either pins 1 and 3 or pins 2 and 3.

Cddiode capacitance f = 1 MHz; VR=0V

PESD3V3S2UQ - 200 275 pF

PESD5V0S2UQ - 150 215 pF

PESD12VS2UQ - 38 100 pF

PESD15VS2UQ - 32 70 pF

PESD24VS2UQ - 23 50 pF

VCL clamping voltage [1][2]

PESD3V3S2UQ IPP =1A - - 8 V

IPP =15A - - 20 V

PESD5V0S2UQ IPP =1A - - 9 V

IPP =15A - - 20 V

PESD12VS2UQ IPP =1A - - 19 V

IPP =5A - - 35 V

PESD15VS2UQ IPP =1A - - 23 V

IPP =5A - - 40 V

PESD24VS2UQ IPP =1A - - 36 V

IPP =3A - - 70 V

rdif differential resistance

PESD3V3S2UQ IR=5mA - - 40 Ω

PESD5V0S2UQ IR=5mA - - 15 Ω

PESD12VS2UQ IR=5mA - - 15 Ω

PESD15VS2UQ IR=1mA - - 225 Ω

PESD24VS2UQ IR=0.5mA - - 300 Ω

Table 8. Characteristics …continued

Tj=25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 04 — 26 January 2010 6 of 13

NXP Semiconductors PESDxS2UQ series

Double ESD protection diodes in SOT663 package

Tamb =25°C

Fig 3. Peak pulse powe r di ss ipation as a function of

pulse duration; typical values Fig 4. Relative variation of peak pulse po we r a s a

function of junction temperature;

typical values

f=1MHz; T

amb =25°C

(1) PESD3V3S2UQ; VRWM =3.3V

(2) PESD5V0S2UQ; VRWM =5V

f=1MHz; T

amb =25°C

(1) PESD12VS2UQ; VRWM =12V

(2) PESD15VS2UQ; VRWM =15V

(3) PESD24VS2UQ; VRWM =24V

Fig 5. Diode capacitance as a function of reverse

voltage; typical values Fig 6. Diode capacitance as a function of reverse

voltage; typical values

tp (μs)

110

102

001aaa726

103

102

104

PPP

(W)

(°C)

0 20015050 100

001aaa193

0.4

0.8

1.2

PP(25°C)

VR (V)

054231

001aaa727

120

160

200

240

(pF)

(1)

(2)

VR (V)

0252010 155

001aaa728

(pF)

(1)

(3)

(2)

Product data sheet Rev. 04 — 26 January 2010 7 of 13

NXP Semiconductors PESDxS2UQ series

Double ESD protection diodes in SOT663 package

(1) PESD3V3S2UQ; VRWM =3.3V

(2) PESD5V0S2UQ; VRWM =5V

IR is less than 15 nA at 150 °C for:

PESD12VS2UQ; VRWM =12V

PESD15VS2UQ; VRWM =15V

PESD24VS2UQ; VRWM =24V

Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical valu es

001aaa729

−1

(°C)

−100 150100050−50

RM(25°C)

(1)

(2)

Product data sheet Rev. 04 — 26 January 2010 8 of 13

NXP Semiconductors PESDxS2UQ series

Double ESD protection diodes in SOT663 package

Fig 8. ESD clamping test se tup and waveforms

001aaa73

450 Ω

50 Ω

Note 1: IEC61000-4-2 network

CZ = 150 pF; RZ = 330 Ω

DUT: PESDxS2UQ

RG 223/U

50 Ω coax

ESD TESTER 4 GHz DIGITAL

OSCILLOSCOPE

10×

ATTENUATOR

vertical scale = 200 V/div

horizontal scale = 50 ns/div

vertical scale = 20 V/div

horizontal scale = 50 ns/div

vertical scale = 200 V/div

horizontal scale = 50 ns/div

vertical scale = 10 V/div

horizontal scale = 50 ns/div

GND

unclamped +1 kV ESD voltage waveform

(IEC61000-4-2 network)

clamped +1 kV ESD voltage waveform

(IEC61000-4-2 network)

GND

unclamped −1 kV ESD voltage waveform

(IEC61000-4-2 network)

clamped −1 kV ESD voltage waveform

(IEC61000-4-2 network)

note 1

PESD24VS2UQ

PESD15VS2UQ

PESD12VS2UQ

PESD5V2S2UQ

PESD3V3S2UQ

Product data sheet Rev. 04 — 26 January 2010 9 of 13

NXP Semiconductors PESDxS2UQ series

Double ESD protection diodes in SOT663 package

7. Application information

The PESDxS2UQ series is designed for the protection of up to two unidirectional data

lines from the damage caused by ESD and surge pulses. The devices may be used on

lines where the signal polarities are below ground. The PESDxS2UQ series provides a

surge capability of up to 150 W (PPP) per line for an 8/20 μs waveform.

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)

and surge transients. The following guidelines are recommended:

1. Place the device as clos e to the input terminal or connector as possible.

2. The path length between the device and the protected line should be minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and

ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should b e used whenever possible. For multilaye r PCBs, use ground

vias.

Fig 9. Typical application: ESD protection of data lines

001aaa73

PESDxS2UQ

line 1 to be protected

unidirectional protection

of two lines

bidirectional protection

of one line

line 2 to be protected

ground

PESDxS2UQ

line 1 to be protected

ground

Product data sheet Rev. 04 — 26 January 2010 10 of 13

NXP Semiconductors PESDxS2UQ series

Double ESD protection diodes in SOT663 package

8. Package outline

9. Packing information

[1] For further information and the availability of packing methods, see Section 12.

Fig 10. Package outline PESDxS2UQ series (SOT663)

Dimensions in mm 02-05-21

1.7

1.5

1.7

1.5

1.3

1.1

0.18

0.08

0.33

0.23

0.5

0.6

0.5

0.3

0.1

Table 9. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quan tity

4000 8000

PESD3V3S2UQ

PESD5V0S2UQ

PESD12VS2UQ

PESD15VS2UQ

PESD24VS2UQ

SOT663 2 mm pitch, 8 mm tape and reel - -315

PESD3V3S2UQ

PESD5V0S2UQ

PESD12VS2UQ

PESD15VS2UQ

PESD24VS2UQ

SOT663 4 mm pitch, 8 mm tape and reel -115 -

Product data sheet Rev. 04 — 26 January 2010 11 of 13

NXP Semiconductors PESDxS2UQ series

Double ESD protection diodes in SOT663 package

10. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PESDXS2UQ_SER_4 20100126 Product data sheet - PESDXS2UQ_SER_N_3

Modifications: •The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate .

•Section 1.1 “General description”: amended

•Section 1.4 “Quick reference data”: amended

•Table 2 “Pinning”: updated

•Section 7 “Application information”: amended

•Figure 10: superseded by mini mized package outline drawing

•Section 9 “Packing information”: added

•Section 11 “Legal information”: updated

PESDXS2UQ_SER_N_3 20080911 Product data sheet - PESDXS2UQ_SERIES_2

PESDXS2UQ_SERIES_2 20040427 Product specification - PESDXS2UQ_SERIES_1

PESDXS2UQ_SERIES_1 20031215 Product specification - -

Product data sheet Rev. 04 — 26 January 2010 12 of 13

NXP Semiconductors PESDxS2UQ series

Double ESD protection diodes in SOT663 package

11. Legal information

11.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

11.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict wit h the short data sheet, th e

full data sheet shall pre va il.

11.3 Disclaimers

General — In formation in this document is beli eved to be accurate and

reliable. However, NXP Semiconductors d oes not give any repr esentatio ns or

warranties, expressed or impli ed, as to the accuracy or completeness of such

information and shall have no liability for th e co nsequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, milit ary, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ra tings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other co nditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may af fect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/profile/terms, including those pertaining to warrant y,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conflict between inf ormation in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or inte llectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

11.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

12. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Definition

Objective [short] data sheet D evelopment This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

NXP Semiconductors PESDxS2UQ series

Double ESD protection diodes in SOT663 package

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 26 January 2010

Document identifier: PESDXS2UQ_SER_4

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

13. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 9

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

9 Packing information . . . . . . . . . . . . . . . . . . . . 10

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12 Contact information. . . . . . . . . . . . . . . . . . . . . 12

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13